2,849 research outputs found
CMOS-3D smart imager architectures for feature detection
This paper reports a multi-layered smart image sensor architecture for feature extraction based on detection of interest points. The architecture is conceived for 3-D integrated circuit technologies consisting of two layers (tiers) plus memory. The top tier includes sensing and processing circuitry aimed to perform Gaussian filtering and generate Gaussian pyramids in fully concurrent way. The circuitry in this tier operates in mixed-signal domain. It embeds in-pixel correlated double sampling, a switched-capacitor network for Gaussian pyramid generation, analog memories and a comparator for in-pixel analog-to-digital conversion. This tier can be further split into two for improved resolution; one containing the sensors and another containing a capacitor per sensor plus the mixed-signal processing circuitry. Regarding the bottom tier, it embeds digital circuitry entitled for the calculation of Harris, Hessian, and difference-of-Gaussian detectors. The overall system can hence be configured by the user to detect interest points by using the algorithm out of these three better suited to practical applications. The paper describes the different kind of algorithms featured and the circuitry employed at top and bottom tiers. The Gaussian pyramid is implemented with a switched-capacitor network in less than 50 ÎŒs, outperforming more conventional solutions.Xunta de Galicia 10PXIB206037PRMinisterio de Ciencia e InnovaciĂłn TEC2009-12686, IPT-2011-1625-430000Office of Naval Research N00014111031
Advances on CMOS image sensors
This paper offers an introduction to the technological advances of image sensors designed using
complementary metalâoxideâsemiconductor (CMOS) processes along the last decades. We review
some of those technological advances and examine potential disruptive growth directions for CMOS
image sensors and proposed ways to achieve them. Those advances include breakthroughs on
image quality such as resolution, capture speed, light sensitivity and color detection and advances on
the computational imaging. The current trend is to push the innovation efforts even further as the
market requires higher resolution, higher speed, lower power consumption and, mainly, lower cost
sensors. Although CMOS image sensors are currently used in several different applications from
consumer to defense to medical diagnosis, product differentiation is becoming both a requirement and
a difficult goal for any image sensor manufacturer. The unique properties of CMOS process allows the
integration of several signal processing techniques and are driving the impressive advancement of the
computational imaging. With this paper, we offer a very comprehensive review of methods,
techniques, designs and fabrication of CMOS image sensors that have impacted or might will impact
the images sensor applications and markets
Configurable 3D-integrated focal-plane sensor-processor array architecture
A mixed-signal Cellular Visual Microprocessor architecture with digital processors is
described. An ASIC implementation is also demonstrated. The architecture is composed of a
regular sensor readout circuit array, prepared for 3D face-to-face type integration, and one or
several cascaded array of mainly identical (SIMD) processing elements. The individual array
elements derived from the same general HDL description and could be of different in size, aspect
ratio, and computing resources
Digital implementation of the cellular sensor-computers
Two different kinds of cellular sensor-processor architectures are used nowadays in various
applications. The first is the traditional sensor-processor architecture, where the sensor and the
processor arrays are mapped into each other. The second is the foveal architecture, in which a
small active fovea is navigating in a large sensor array. This second architecture is introduced
and compared here. Both of these architectures can be implemented with analog and digital
processor arrays. The efficiency of the different implementation types, depending on the used
CMOS technology, is analyzed. It turned out, that the finer the technology is, the better to use
digital implementation rather than analog
Ultra-low noise, high-frame rate readout design for a 3D-stacked CMOS image sensor
Due to the switch from CCD to CMOS technology, CMOS based image sensors have become
smaller, cheaper, faster, and have recently outclassed CCDs in terms of image quality. Apart
from the extensive set of applications requiring image sensors, the next technological
breakthrough in imaging would be to consolidate and completely shift the conventional CMOS
image sensor technology to the 3D-stacked technology. Stacking is recent and an innovative
technology in the imaging field, allowing multiple silicon tiers with different functions to be
stacked on top of each other. The technology allows for an extreme parallelism of the pixel
readout circuitry. Furthermore, the readout is placed underneath the pixel array on a 3D-stacked
image sensor, and the parallelism of the readout can remain constant at any spatial resolution of
the sensors, allowing extreme low noise and a high-frame rate (design) at virtually any sensor
array resolution.
The objective of this work is the design of ultra-low noise readout circuits meant for 3D-stacked
image sensors, structured with parallel readout circuitries. The readout circuitâs key
requirements are low noise, speed, low-area (for higher parallelism), and low power.
A CMOS imaging review is presented through a short historical background, followed by the
description of the motivation, the research goals, and the work contributions. The fundamentals
of CMOS image sensors are addressed, as a part of highlighting the typical image sensor features,
the essential building blocks, types of operation, as well as their physical characteristics and their
evaluation metrics. Following up on this, the document pays attention to the readout circuitâs
noise theory and the column converters theory, to identify possible pitfalls to obtain sub-electron
noise imagers. Lastly, the fabricated test CIS device performances are reported along with
conjectures and conclusions, ending this thesis with the 3D-stacked subject issues and the future
work. A part of the developed research work is located in the Appendices.Devido à mudança da tecnologia CCD para CMOS, os sensores de imagem em CMOS tornam se mais pequenos, mais baratos, mais råpidos, e mais recentemente, ultrapassaram os sensores
CCD no que respeita à qualidade de imagem. Para além do vasto conjunto de aplicaçÔes que
requerem sensores de imagem, o prĂłximo salto tecnolĂłgico no ramo dos sensores de imagem Ă©
o de mudar completamente da tecnologia de sensores de imagem CMOS convencional para a
tecnologia â3D-stackedâ. O empilhamento de chips Ă© relativamente recente e Ă© uma tecnologia
inovadora no campo dos sensores de imagem, permitindo vĂĄrios planos de silĂcio com diferentes
funçÔes poderem ser empilhados uns sobre os outros. Esta tecnologia permite portanto, um
paralelismo extremo na leitura dos sinais vindos da matriz de pĂxeis. AlĂ©m disso, num sensor de
imagem de planos de silĂcio empilhados, os circuitos de leitura estĂŁo posicionados debaixo da
matriz de pĂxeis, sendo que dessa forma, o paralelismo pode manter-se constante para qualquer
resolução espacial, permitindo assim atingir um extremo baixo ruĂdo e um alto debito de
imagens, virtualmente para qualquer resolução desejada.
O objetivo deste trabalho Ă© o de desenhar circuitos de leitura de coluna de muito baixo ruĂdo,
planeados para serem empregues em sensores de imagem â3D-stackedâ com estruturas
altamente paralelizadas. Os requisitos chave para os circuitos de leitura sĂŁo de baixo ruĂdo,
rapidez e pouca ĂĄrea utilizada, de forma a obter-se o melhor rĂĄcio.
Uma breve revisĂŁo histĂłrica dos sensores de imagem CMOS Ă© apresentada, seguida da
motivação, dos objetivos e das contribuiçÔes feitas. Os fundamentos dos sensores de imagem
CMOS sĂŁo tambĂ©m abordados para expor as suas caracterĂsticas, os blocos essenciais, os tipos
de operação, assim como as suas caracterĂsticas fĂsicas e suas mĂ©tricas de avaliação. No
seguimento disto, especial atenção Ă© dada Ă teoria subjacente ao ruĂdo inerente dos circuitos de
leitura e dos conversores de coluna, servindo para identificar os possĂveis aspetos que dificultem
atingir a tĂŁo desejada performance de muito baixo ruĂdo. Por fim, os resultados experimentais
do sensor desenvolvido sĂŁo apresentados junto com possĂveis conjeturas e respetivas conclusĂ”es,
terminando o documento com o assunto de empilhamento vertical de camadas de silĂcio, junto
com o possĂvel trabalho futuro
Infrastructure for Detector Research and Development towards the International Linear Collider
The EUDET-project was launched to create an infrastructure for developing and
testing new and advanced detector technologies to be used at a future linear
collider. The aim was to make possible experimentation and analysis of data for
institutes, which otherwise could not be realized due to lack of resources. The
infrastructure comprised an analysis and software network, and instrumentation
infrastructures for tracking detectors as well as for calorimetry.Comment: 54 pages, 48 picture
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