Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells

A device physics model has been developed for radial p-n junction nanorod solar cells, in which densely packed nanorods, each having a p-n junction in the radial direction, are oriented with the rod axis parallel to the incident light direction. High-aspect-ratio (length/diameter) nanorods allow the use of a sufficient thickness of material to obtain good optical absorption while simultaneously providing short collection lengths for excited carriers in a direction normal to the light absorption. The short collection lengths facilitate the efficient collection of photogenerated carriers in materials with low minority-carrier diffusion lengths. The modeling indicates that the design of the radial p-n junction nanorod device should provide large improvements in efficiency relative to a conventional planar geometry p-n junction solar cell, provided that two conditions are satisfied: (1) In a planar solar cell made from the same absorber material, the diffusion length of minority carriers must be too low to allow for extraction of most of the light-generated carriers in the absorber thickness needed to obtain full light absorption. (2) The rate of carrier recombination in the depletion region must not be too large (for silicon this means that the carrier lifetimes in the depletion region must be longer than ~10 ns). If only condition (1) is satisfied, the modeling indicates that the radial cell design will offer only modest improvements in efficiency relative to a conventional planar cell design. Application to Si and GaAs nanorod solar cells is also discussed in detail

Understanding macroscale functionality of metal halide perovskites in terms of nanoscale heterogeneities

Hybrid metal halide perovskites have shown an unprecedented rise as semiconductor building blocks for solar energy conversion and light-emitting applications. Currently, the field moves empirically towards more and more complex chemical compositions, including mixed halide quadruple cation compounds that allow optical properties to be tuned and show promise for better stability. Despite tremendous progress in the field, there is a need for better understanding of mechanisms of efficiency loss and instabilities to facilitate rational optimization of composition. Starting from the device level and then diving into nanoscale properties, we highlight how structural and compositional heterogeneities affect macroscopic optoelectronic characteristics. Furthermore, we provide an overview of some of the advanced spectroscopy and imaging methods that are used to probe disorder and non-uniformities. A unique feature of hybrid halide perovskite compounds is the propensity for these heterogeneities to evolve in space and time under relatively mild illumination and applied electric fields, such as those found within active devices. This introduces an additional challenge for characterization and calls for application of complimentary probes that can aid in correlating the properties of local disorder with macroscopic function, with the ultimate goal of rationally tailoring synthesis towards optimal structures and compositions

Local Defects in colloidal quantum dot thin films measured via spatially resolved multi-modal optoelectronic spectroscopy.

The morphology, chemical composition, and electronic uniformity of thin-film solution-processed optoelectronics are believed to greatly affect device performance. Although scanning probe microscopies can address variations on the micrometer scale, the field of view is still limited to well under the typical device area, as well as the size of extrinsic defects introduced during fabrication. Herein, a micrometer-resolution 2D characterization method with millimeter-scale field of view is demonstrated, which simultaneously collects photoluminescence spectra, photocurrent transients, and photovoltage transients. This high-resolution morphology mapping is used to quantify the distribution and strength of the local optoelectronic property variations in colloidal quantum dot solar cells due to film defects, physical damage, and contaminants across nearly the entire test device area, and the extent to which these variations account for overall performance losses. It is found that macroscopic defects have effects that are confined to their localized areas, rarely prove fatal for device performance, and are largely not responsible for device shunting. Moreover, quantitative analysis based on statistical partitioning methods of such data is used to show how defect identification can be automated while identifying variations in underlying properties such as mobilities and recombination strengths and the mechanisms by which they govern device behavior.DMR-1807342 - National Science Foundation; Hopkins Extreme Materials InstituteAccepted manuscrip

Transient Analysis of Warm Electron Injection Programming of Double Gate SONOS Memories by means of Full Band Monte Carlo Simulation

In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations. Warm electron injection is characterized by an applied VDS smaller than 3.15 V, so that electrons cannot easily accumulate a kinetic energy larger than the height of the Si/SiO2 barrier. We perform a time-dependent simulation of the program operation where the local gate current density is computed with a continuum-based method and is adiabatically separated from the 2D full Monte Carlo simulation used for obtaining the electron distribution in the phase space. In this way we are able to compute the time evolution of the charge stored in the nitride and of the threshold voltages corresponding to forward and reverse bias. We show that warm electron injection is a viable option for NOR programming in order to reduce power supply, preserve reliability and CMOS logic level compatibility. In addition, it provides a well localized charge, offering interesting perspectives for multi-level and dual bit operation, even in devices with negligible short channel effects

Immense magnetic response of exciplex light emission due to correlated spin-charge dynamics

As carriers slowly move through a disordered energy landscape in organic semiconductors, tiny spatial variations in spin dynamics relieve spin blocking at transport bottlenecks or in the electron-hole recombination process that produces light. Large room-temperature magnetic-field effects (MFE) ensue in the conductivity and luminescence. Sources of variable spin dynamics generate much larger MFE if their spatial structure is correlated on the nanoscale with the energetic sites governing conductivity or luminescence such as in co-evaporated organic blends within which the electron resides on one molecule and the hole on the other (an exciplex). Here we show that exciplex recombination in blends exhibiting thermally-activated delayed fluorescence (TADF) produces MFE in excess of 60% at room temperature. In addition, effects greater than 4000% can be achieved by tuning the device's current-voltage response curve by device conditioning. These immense MFEs are both the largest reported values for their device type at room temperature. Our theory traces this MFE and its unusual temperature dependence to changes in spin mixing between triplet exciplexes and light-emitting singlet exciplexes. In contrast, spin mixing of excitons is energetically suppressed, and thus spin mixing produces comparatively weaker MFE in materials emitting light from excitons by affecting the precursor pairs. Demonstration of immense MFE in common organic blends provides a flexible and inexpensive pathway towards magnetic functionality and field sensitivity in current organic devices without patterning the constituent materials on the nanoscale. Magnetic fields increase the power efficiency of unconditioned devices by 30% at room temperature, also showing that magnetic fields may increase the efficiency of the TADF process.Comment: 12 pages, PRX in pres

量子ドット太陽電池とペロブスカイト太陽電池における界面エンジニアリングと界面電荷移動ダイナミクス

電気通信大学201