Analysis of the high frequency substrate noise effects on LC-VCOs

La integració de transceptors per comunicacions de radiofreqüència en CMOS pot quedar seriosament limitada per la interacció entre els seus blocs, arribant a desaconsellar la utilització de un únic dau de silici. El soroll d’alta freqüència generat per certs blocs, com l’amplificador de potencia, pot viatjar pel substrat i amenaçar el correcte funcionament de l’oscil·lador local. Trobem tres raons importants que mostren aquest risc d’interacció entre blocs i que justifiquen la necessitat d’un estudi profund per minimitzar-lo. Les característiques del substrat fan que el soroll d’alta freqüència es propagui m’és fàcilment que el de baixa freqüència. Per altra banda, les estructures de protecció perden eficiència a mesura que la freqüència augmenta. Finalment, el soroll d’alta freqüència que arriba a l’oscil·lador degrada al seu correcte comportament. El propòsit d’aquesta tesis és analitzar en profunditat la interacció entre el soroll d’alta freqüència que es propaga pel substrat i l’oscil·lador amb l’objectiu de poder predir, mitjançant un model, l’efecte que aquest soroll pot tenir sobre el correcte funcionament de l’oscil·lador. Es volen proporcionar diverses guies i normes a seguir que permeti als dissenyadors augmentar la robustesa dels oscil·ladors al soroll d’alta freqüència que viatja pel substrat. La investigació de l’efecte del soroll de substrat en oscil·ladors s’ha iniciat des d’un punt de vista empíric, per una banda, analitzant la propagació de senyals a través del substrat i avaluant l’eficiència d’estructures per bloquejar aquesta propagació, i per altra, determinant l’efecte d’un to present en el substrat en un oscil·lador. Aquesta investigació ha mostrat que la injecció d’un to d’alta freqüència en el substrat es pot propagar fins arribar a l’oscil·lador i que, a causa del ’pulling’ de freqüència, pot modular en freqüència la sortida de l’oscil·lador. A partir dels resultats de l’anàlisi empíric s’ha aportat un model matemàtic que permet predir l’efecte del soroll en l’oscil·lador. Aquest model té el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem. el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem.The integration of transceivers for RF communication in CMOS can be seriously limited by the interaction between their blocks, even advising against using a single silicon die. The high frequency noise generated by some of the blocks, like the power amplifier, can travel through the substrate, reaching the local oscillator and threatening its correct performance. Three important reasons can be stated that show the risk of the single die integration. Noise propagation is easier the higher the frequency. Moreover, the protection structures lose efficiency as the noise frequency increases. Finally, the high frequency noise that reaches the local oscillator degrades its performance. The purpose of this thesis is to deeply analyze the interaction between the high frequency substrate noise and the oscillator with the objective of being able to predict, thanks to a model, the effect that this noise may have over the correct behavior of the oscillator. We want to provide some guidelines to the designers to allow them to increase the robustness of the oscillator to high frequency substrate noise. The investigation of the effect of the high frequency substrate noise on oscillators has started from an empirical point of view, on one hand, analyzing the noise propagation through the substrate and evaluating the efficiency of some structures to block this propagation, and on the other hand, determining the effect on an oscillator of a high frequency noise tone present in the substrate. This investigation has shown that the injection of a high frequency tone in the substrate can reach the oscillator and, due to a frequency pulling effect, it can modulate in frequency the output of the oscillator. Based on the results obtained during the empirical analysis, a mathematical model to predict the effect of the substrate noise on the oscillator has been provided. The main advantage of this model is the fact that it is based on physical parameters of the oscillator and of the noise, allowing to determine the measures that a designer can take to increase the robustness of the oscillator as well as the consequences (trade-offs) that these measures have over its global performance. This model has been compared against both, simulations and real measurements, showing a very high accuracy to predict the effect of the high frequency substrate noise. The usefulness of the presented model as a design tool has been demonstrated in two case studies. Firstly, the conclusions obtained from the model have been applied in the design of an ultra low power consumption 2.5 GHz oscillator robust to the high frequency substrate noise with characteristics which make it compatible with the main communication standards in this frequency band. Finally, the model has been used as an analysis tool to evaluate the cause of the differences, in terms of performance degradation due to substrate noise, measured in two 60 GHz oscillators with two different tank inductor shielding strategies, floating and grounded. The model has determined that the robustness differences are caused by the improvement in the tank quality factor and in the oscillation amplitude and no by an increased isolation between the tank and the substrate. The model has shown to be valid and very accurate even in these extreme frequency range.Postprint (published version

An Energy-Efficient Reconfigurable Mobile Memory Interface for Computing Systems

The critical need for higher power efficiency and bandwidth transceiver design has significantly increased as mobile devices, such as smart phones, laptops, tablets, and ultra-portable personal digital assistants continue to be constructed using heterogeneous intellectual properties such as central processing units (CPUs), graphics processing units (GPUs), digital signal processors, dynamic random-access memories (DRAMs), sensors, and graphics/image processing units and to have enhanced graphic computing and video processing capabilities. However, the current mobile interface technologies which support CPU to memory communication (e.g. baseband-only signaling) have critical limitations, particularly super-linear energy consumption, limited bandwidth, and non-reconfigurable data access. As a consequence, there is a critical need to improve both energy efficiency and bandwidth for future mobile devices.;The primary goal of this study is to design an energy-efficient reconfigurable mobile memory interface for mobile computing systems in order to dramatically enhance the circuit and system bandwidth and power efficiency. The proposed energy efficient mobile memory interface which utilizes an advanced base-band (BB) signaling and a RF-band signaling is capable of simultaneous bi-directional communication and reconfigurable data access. It also increases power efficiency and bandwidth between mobile CPUs and memory subsystems on a single-ended shared transmission line. Moreover, due to multiple data communication on a single-ended shared transmission line, the number of transmission lines between mobile CPU and memories is considerably reduced, resulting in significant technological innovations, (e.g. more compact devices and low cost packaging to mobile communication interface) and establishing the principles and feasibility of technologies for future mobile system applications. The operation and performance of the proposed transceiver are analyzed and its circuit implementation is discussed in details. A chip prototype of the transceiver was implemented in a 65nm CMOS process technology. In the measurement, the transceiver exhibits higher aggregate data throughput and better energy efficiency compared to prior works

Design of CMOS integrated frequency synthesizers for ultra-wideband wireless communications systems

Ultra¬wide band (UWB) system is a breakthrough in wireless communication, as it provides data rate one order higher than existing ones. This dissertation focuses on the design of CMOS integrated frequency synthesizer and its building blocks used in UWB system. A mixer¬based frequency synthesizer architecture is proposed to satisfy the agile frequency hopping requirement, which is no more than 9.5 ns, three orders faster than conventional phase¬locked loop (PLL)¬based synthesizers. Harmonic cancela¬tion technique is extended and applied to suppress the undesired harmonic mixing components. Simulation shows that sidebands at 2.4 GHz and 5 GHz are below 36 dBc from carrier. The frequency synthesizer contains a novel quadrature VCO based on the capacitive source degeneration structure. The QVCO tackles the jeopardous ambiguity of the oscillation frequency in conventional QVCOs. Measurement shows that the 5¬GHz CSD¬QVCO in 0.18 µm CMOS technology draws 5.2 mA current from a 1.2 V power supply. Its phase noise is ¬120 dBc at 3 MHz offset. Compared with existing phase shift LC QVCOs, the proposed CSD¬QVCO presents better phase noise and power efficiency. Finally, a novel injection locking frequency divider (ILFD) is presented. Im¬plemented with three stages in 0.18 µm CMOS technology, the ILFD draws 3¬mA current from a 1.8¬V power supply. It achieves multiple large division ratios as 6, 12, and 18 with all locking ranges greater than 1.7 GHz and injection frequency up to 11 GHz. Compared with other published ILFDs, the proposed ILFD achieves the largest division ratio with satisfactory locking range

Process and Temperature Compensated Wideband Injection Locked Frequency Dividers and their Application to Low-Power 2.4-GHz Frequency Synthesizers

There has been a dramatic increase in wireless awareness among the user community in the past five years. The 2.4-GHz Industrial, Scientific and Medical (ISM) band is being used for a diverse range of applications due to the following reasons. It is the only unlicensed band approved worldwide and it offers more bandwidth and supports higher data rates compared to the 915-MHz ISM band. The power consumption of devices utilizing the 2.4-GHz band is much lower compared to the 5.2-GHz ISM band. Protocols like Bluetooth and Zigbee that utilize the 2.4-GHz ISM band are becoming extremely popular. Bluetooth is an economic wireless solution for short range connectivity between PC, cell phones, PDAs, Laptops etc. The Zigbee protocol is a wireless technology that was developed as an open global standard to address the unique needs of low-cost, lowpower, wireless sensor networks. Wireless sensor networks are becoming ubiquitous, especially after the recent terrorist activities. Sensors are employed in strategic locations for real-time environmental monitoring, where they collect and transmit data frequently to a nearby terminal. The devices operating in this band are usually compact and battery powered. To enhance battery life and avoid the cumbersome task of battery replacement, the devices used should consume extremely low power. Also, to meet the growing demands cost and sized has to be kept low which mandates fully monolithic implementation using low cost process. CMOS process is extremely attractive for such applications because of its low cost and the possibility to integrate baseband and high frequency circuits on the same chip. A fully integrated solution is attractive for low power consumption as it avoids the need for power hungry drivers for driving off-chip components. The transceiver is often the most power hungry block in a wireless communication system. The frequency divider (prescaler) and the voltage controlled oscillator in the transmitter’s frequency synthesizer are among the major sources of power consumption. There have been a number of publications in the past few decades on low-power high-performance VCOs. Therefore this work focuses on prescalers. A class of analog frequency dividers called as Injection-Locked Frequency Dividers (ILFD) was introduced in the recent past as low power frequency division. ILFDs can consume an order of magnitude lower power when compared to conventional flip-flop based dividers. However the range of operation frequency also knows as the locking range is limited. ILFDs can be classified as LC based and Ring based. Though LC based are insensitive to process and temperature variation, they cannot be used for the 2.4-GHz ISM band because of the large size of on-chip inductors at these frequencies. This causes a lot of valuable chip area to be wasted. Ring based ILFDs are compact and provide a low power solution but are extremely sensitive to process and temperature variations. Process and temperature variation can cause ring based ILFD to loose lock in the desired operating band. The goal of this work is to make the ring based ILFDs useful for practical applications. Techniques to extend the locking range of the ILFDs are discussed. A novel and simple compensation technique is devised to compensate the ILFD and keep the locking range tight with process and temperature variations. The proposed ILFD is used in a 2.4-GHz frequency synthesizer that is optimized for fractional-N synthesis. Measurement results supporting the theory are provided

Quadrature Frequency Synthesis for Wideband Wireless Transceivers

University of Minnesota Ph.D. dissertation. May 2014. Major: Electrical Engineering. Advisor: Ramesh Harjani. 1 computer file (PDF); xi, 112 pages.In this thesis, three different techniques pertinent to quadrature LO generation in high data rate and wideband RF transceivers are presented. Prototype designs are made to verify the performance of the proposed techniques, in three different technologies: IBM 130nm CMOS process, TSMC 65nm CMOS process and IBM 32nm SOI process. The three prototype designs also cover three different frequency bands, ranging from 5GHz to 74GHz. First, an LO generation scheme for a 21 GHz center-frequency, 4-GHz instantaneous bandwidth channelized receiver is presented. A single 1.33 GHz reference source is used to simultaneously generate 20 GHz and 22 GHz LOs with quadrature outputs. Injection locking is used instead of conventional PLL techniques allowing low-power quadrature generation. A harmonic-rich signal, containing both even and odd harmonics of the input reference signal, is generated using a digital pulse slimmer. Two ILO chains are used to lock on to the 10th and 11th harmonics of the reference signal generating the 20 GHz and the 22 GHz quadrature LOs respectively. The prototype design is implemented in IBM's 130 nm CMOS process, draws 110 mA from a 1.2 V supply and occupies an active area of 1.8 square-mm. Next, a wide-tuning range QVCO with a novel complimentary-coupling technique is presented. By using PMOS transistors for coupling two VCOs with NMOS gm-cells, it is shown that significant phase-noise improvement (7-9 dB) can be achieved over the traditional NMOS coupling. This breaks the trade-off between quadrature accuracy and phase-noise, allowing reasonable accuracy without a significant phase-noise hit. The proposed technique is frequency-insensitive, allowing robust coupling over a wide tuning range. A prototype design is done in TSMC 65nm process, with 4-bits of discrete tuning spanning the frequency range 4.6-7.8 GHz (52% FTR) while achieving a minimum FOM of 181.4dBc/Hz and a minimum FOMT of 196dBc/Hz. Finally, a wide tuning-range millimeter wave QVCO is presented that employs a modified transformer-based super-harmonic coupling technique. Using the proposed technique, together with custom-designed inductors and metal capacitors, a prototype is designed in IBM 32nm SOI technology with 6-bits of discrete tuning using switched capacitors. Full EM-extracted simulations show a tuning range of 53.84GHz to 73.59GHz, with an FOM of 173 dBc/Hz and an FOMT of 183 dBc/Hz. With 19.75GHz of tuning range around a 63.7GHz center frequency, the simulated FTR is 31%, surpassing all similar designs in the same band. A slight modification in the tank inductors would enable the QVCO to be employed in multiple mm-Wave bands (57-66 GHz communication band, 71-76 GHz E-band, and 76-77 GHz radar band)

Direct Conversion RF Front-End Implementation for Ultra-Wideband (UWB) and GSM/WCDMA Dual-Band Applications in Silicon-Based Technologies

This dissertation focuses on wideband circuit design and implementation issues up to 10GHz based on the direct conversion architecture in the CMOS and SiGe BiCMOS technologies. The dissertation consists of two parts: One, implementation of a RF front-end receiver for an ultra-wideband system and, two, implementation of a local oscillation (LO) signal for a GSM/WCDMA multiband application. For emerging ultra-wideband (UWB) applications, the key active components in the RF front-end receiver were designed and implemented in 0.18um SiGe BiCMOS process. The design of LNA, which is the critical circuit block for both systems, was analyzed in terms of noise, linearity and group delay variation over an extemely wide bandwidth. Measurements are demonstrated for an energy-thrifty UWB receiver based on an MB-OFDM system covering the full FCC-allowed UWB frequency range. For multiband applications such as a GSM/WCDMA dual-band application, the design of wideband VCO and various frequency generation blocks are investigated as alternatives for implementation of direct conversion architecture. In order to reduce DC-offset and LO pulling phenomena that degrade performance in a typical direct conversion scheme, an innovative fractional LO signal generator was implemented in a standard CMOS process. A simple analysis is provided for the loop dynamics and operating range of the design as well as for the measured results of the factional LO signal generator.Ph.D.Committee Chair: Dr. Laskar, Joy; Committee Member: Dr. Cressler, John; Committee Member: Dr. Kohl, Paul; Committee Member: Dr. Papapolymerou, John; Committee Member: Dr. Scott, Waymon

Advanced CMOS Integrated Circuit Design and Application

The recent development of various application systems and platforms, such as 5G, B5G, 6G, and IoT, is based on the advancement of CMOS integrated circuit (IC) technology that enables them to implement high-performance chipsets. In addition to development in the traditional fields of analog and digital integrated circuits, the development of CMOS IC design and application in high-power and high-frequency operations, which was previously thought to be possible only with compound semiconductor technology, is a core technology that drives rapid industrial development. This book aims to highlight advances in all aspects of CMOS integrated circuit design and applications without discriminating between different operating frequencies, output powers, and the analog/digital domains. Specific topics in the book include: Next-generation CMOS circuit design and application; CMOS RF/microwave/millimeter-wave/terahertz-wave integrated circuits and systems; CMOS integrated circuits specially used for wireless or wired systems and applications such as converters, sensors, interfaces, frequency synthesizers/generators/rectifiers, and so on; Algorithm and signal-processing methods to improve the performance of CMOS circuits and systems

A Fully Integrated Multi-Band Multi-Output Synthesizer with Wide-Locking-Range 1/3 Injection Locked Divider Utilizing Self-Injection Technique for Multi-Band Microwave Systems

This dissertation reports the development of a new multi-band multi-output synthesizer, 1/2 dual-injection locked divider, 1/3 injection-locked divider with phase-tuning, and 1/3 injection-locked divider with self-injection using 0.18-micrometer CMOS technology. The synthesizer is used for a multi-band multi-polarization radar system operating in the K- and Ka-band. The synthesizer is a fully integrated concurrent tri-band, tri-output phase-locked loop (PLL) with divide-by-3 injection locked frequency divider (ILFD). A new locking mechanism for the ILFD based on the gain control of the feedback amplifier is utilized to enable tunable and enhanced locking range which facilitates the attainment of stable locking states. The PLL has three concurrent multiband outputs: 3.47-4.313 GHz, 6.94-8.626 GHz and 19.44-21.42-GHz. High second-order harmonic suppression of 62.2 dBc is achieved without using a filter through optimization of the balance between the differential outputs. The proposed technique enables the use of an integer-N architecture for multi-band and microwave systems, while maintaining the benefit of the integer-N architecture; an optimal performance in area and power consumption. The 1/2 dual-ILFD with wide locking range and low-power consumption is analyzed and designed together with a divide-by-2 current mode logic (CML) divider. The 1/2 dual-ILFD enhances the locking range with low-power consumption through optimized load quality factor (QL) and output current amplitude (iOSC) simultaneously. The 1/2 dual-ILFD achieves a locking range of 692 MHz between 7.512 and 8.204 GHz. The new 1/2 dual-ILFD is especially attractive for microwave phase-locked loops and frequency synthesizers requiring low power and wide locking range. The 3.5-GHz divide-by-3 (1/3) ILFD consists of an internal 10.5-GHz Voltage Controlled Oscillator (VCO) functioning as an injection source, 1/3 ILFD core, and output inverter buffer. A phase tuner implemented on an asymmetric inductor is proposed to increase the locking range. The other divide-by-3 ILFD utilizes self-injection technique. The self-injection technique substantially enhances the locking range and phase noise, and reduces the minimum power of the injection signal needed for the 1/3 ILFD. The locking range is increased by 47.8 % and the phase noise is reduced by 14.77 dBc/Hz at 1-MHz offset

Design of CMOS integrated frequency synthesizers for ultra-wideband wireless communications systems

Ultra¬wide band (UWB) system is a breakthrough in wireless communication, as it provides data rate one order higher than existing ones. This dissertation focuses on the design of CMOS integrated frequency synthesizer and its building blocks used in UWB system. A mixer¬based frequency synthesizer architecture is proposed to satisfy the agile frequency hopping requirement, which is no more than 9.5 ns, three orders faster than conventional phase¬locked loop (PLL)¬based synthesizers. Harmonic cancela¬tion technique is extended and applied to suppress the undesired harmonic mixing components. Simulation shows that sidebands at 2.4 GHz and 5 GHz are below 36 dBc from carrier. The frequency synthesizer contains a novel quadrature VCO based on the capacitive source degeneration structure. The QVCO tackles the jeopardous ambiguity of the oscillation frequency in conventional QVCOs. Measurement shows that the 5¬GHz CSD¬QVCO in 0.18 µm CMOS technology draws 5.2 mA current from a 1.2 V power supply. Its phase noise is ¬120 dBc at 3 MHz offset. Compared with existing phase shift LC QVCOs, the proposed CSD¬QVCO presents better phase noise and power efficiency. Finally, a novel injection locking frequency divider (ILFD) is presented. Im¬plemented with three stages in 0.18 µm CMOS technology, the ILFD draws 3¬mA current from a 1.8¬V power supply. It achieves multiple large division ratios as 6, 12, and 18 with all locking ranges greater than 1.7 GHz and injection frequency up to 11 GHz. Compared with other published ILFDs, the proposed ILFD achieves the largest division ratio with satisfactory locking range

Characterization of process variability and robust optimization of analog circuits

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.Includes bibliographical references (p. 161-174).Continuous scaling of CMOS technology has enabled dramatic performance enhancement of CMOS devices and has provided speed, power, and density improvement in both digital and analog circuits. CMOS millimeter-wave applications operating at more than 50GHz frequencies has become viable in sub-100nm CMOS technologies, providing advantages in cost and high density integration compared to other heterogeneous technologies such as SiGe and III-V compound semiconductors. However, as the operating frequency of CMOS circuits increases, it becomes more difficult to obtain sufficiently wide operating ranges for robust operation in essential analog building blocks such as voltage-controlled oscillators (VCOs) and frequency dividers. The fluctuations of circuit parameters caused by the random and systematic variations in key manufacturing steps become more significant in nano-scale technologies. The process variation of circuit performance is quickly becoming one of the main concerns in high performance analog design. In this thesis, we show design and analysis of a VCO and frequency divider operating beyond 70GHz in a 65nm SOI CMOS technology. The VCO and frequency divider employ design techniques enlarging frequency operating ranges to improve the robustness of circuit operation. Circuit performance is measured from a number of die samples to identify the statistical properties of performance variation. A back-propagation of variation (BPV) scheme based on sensitivity analysis of circuit performance is proposed to extract critical circuit parameter variation using statistical measurement results of the frequency divider. We analyze functional failure caused by performance variability, and propose dynamic and static optimization methods to improve parametric yield. An external bias control is utilized to dynamically tune the divider operating range and to compensate for performance variation. A novel time delay model of a differential CML buffer is proposed to functionally approximate the maximum operating frequency of the frequency divider, which dramatically reduces computational cost of parametric yield estimation. The functional approximation enables the optimization of the VCO and frequency divider parametric yield with a reasonable amount of simulation time.by Daihyun Lim.Ph.D