Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems. In this paper, we review the analytical and the numerical simulation techniques used to study and predict such intrinsic parameters fluctuations. We consider random discrete dopants, trapped charges, atomic-scale interface roughness, and line edge roughness as sources of intrinsic parameter fluctuations. The presented theoretical approach based on Green's functions is restricted to the case of random discrete charges. The numerical simulation approaches based on the drift diffusion approximation with density gradient quantum corrections covers all of the listed sources of fluctuations. The results show that the intrinsic fluctuations in conventional MOSFETs, and later in double gate architectures, will reach levels that will affect the yield and the functionality of the next generation analog and digital circuits unless appropriate changes to the design are made. The future challenges that have to be addressed in order to improve the accuracy and the predictive power of the intrinsic fluctuation simulations are also discussed

Model for self-consistent analysis of arbitrary MQW structures

Self-consistent computations of the potential profile in complex semiconductor heterostructures can be successfully applied for comprehensive simulation of the gain and the absorption spectra, for the analysis of the capture, escape, tunneling, recombination, and relaxation phenomena and as a consequence it can be used for studying dynamical behavior of semiconductor lasers and amplifiers. However, many authors use non-entirely correct ways for the application of the method. In this paper the versatile model is proposed for the investigation, optimization, and the control of parameters of the semiconductor lasers and optical amplifiers which may be employed for the creation of new generations of the high-density photonic systems for the information processing and data transfer, follower and security arrangements. The model is based on the coupled Schredinger, Poisson and drift-diffusion equations which allow to determine energy quantization levels and wave functions of charge carriers, take into account built-in fields, and to investigate doped MQW structures and those under external electric fields influence. In the paper the methodology of computer realization based on our model is described. Boundary conditions for each equation and consideration of the convergence for the method are included. Frequently encountered in practice approaches and errors of self-consistent computations are described. Domains of applicability of the main approaches are estimated. Application examples of the method are given. Some of regularities of the results which were discovered by using self-consistent method are discussed. Design recommendations for structure optimization in respect to managing some parameters of AMQW structures are given.Comment: 12 pages, 2 table, 4 figures, Optics East Symposium, Conference on Physics and Applications of Optoelectronic Devices, October 25-28, 2004, Philadelphia, Pennsylvania, US

When self-consistency makes a difference

Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits. The slow thermal dynamics and the thermal nonlinearity should be accurately included in the model; otherwise, some response features subtly related to the detailed frequency behavior of the slow thermal dynamics would be inaccurately reproduced or completely distorted. In this contribution we show two examples, concerning current collapse in HBTs and modeling of IMPs in GaN HEMTs. Accurate thermal modeling is proved to be be made compatible with circuit-oriented CAD tools through a proper choice of system-level approximations; in the discussion we exploit a Wiener approach, but of course the strategy should be tailored to the specific problem under consideratio

Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors

Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with carrier mobility reaching 2000 cm2/V.s at room temperature. Temperature-dependent transport measurements reveal activated transport at low temperatures due to surface donors, while at room temperature the transport shows a diffusive behavior. From the conductivity data, the extracted value of sound velocity in InAs nanowires is found to be an order less than the bulk. This low sound velocity is attributed to the extended crystal defects that ubiquitously appear in these nanowires. Analyzing the temperature-dependent mobility data, we identify the key scattering mechanisms limiting the carrier transport in these nanowires. Finally, using these scattering models, we perform drift-diffusion based transport simulations of a nanowire field-effect transistor and compare the device performances with experimental measurements. Our device modeling provides insight into performance limits of InAs nanowire transistors and can be used as a predictive methodology for nanowire-based integrated circuits.Comment: 22 pages, 5 Figures, Nano Letter

Synchronization of spatiotemporal semiconductor lasers and its application in color image encryption

Optical chaos is a topic of current research characterized by high-dimensional nonlinearity which is attributed to the delay-induced dynamics, high bandwidth and easy modular implementation of optical feedback. In light of these facts, which adds enough confusion and diffusion properties for secure communications, we explore the synchronization phenomena in spatiotemporal semiconductor laser systems. The novel system is used in a two-phase colored image encryption process. The high-dimensional chaotic attractor generated by the system produces a completely randomized chaotic time series, which is ideal in the secure encoding of messages. The scheme thus illustrated is a two-phase encryption method, which provides sufficiently high confusion and diffusion properties of chaotic cryptosystem employed with unique data sets of processed chaotic sequences. In this novel method of cryptography, the chaotic phase masks are represented as images using the chaotic sequences as the elements of the image. The scheme drastically permutes the positions of the picture elements. The next additional layer of security further alters the statistical information of the original image to a great extent along the three-color planes. The intermediate results during encryption demonstrate the infeasibility for an unauthorized user to decipher the cipher image. Exhaustive statistical tests conducted validate that the scheme is robust against noise and resistant to common attacks due to the double shield of encryption and the infinite dimensionality of the relevant system of partial differential equations.Comment: 20 pages, 11 figures; Article in press, Optics Communications (2011

Numerical simulation of neutron radiation effects in avalanche photodiodes

A new one-dimensional (1-D) device model developed for the simulation of neutron radiation effects in silicon avalanche photodiodes is described. The model uses a finite difference technique to solve the time-independent semiconductor equations across a user specified structure. The model includes impact ionization and illumination allowing accurate simulation with minimal assumptions. The effect of neutron radiation damage is incorporated via the introduction of deep acceptor levels subject to Shockley-Read-Hall statistics. Preliminary analysis of an EG&G reverse APD structure is compared with experimental data from a commercial EG&G C30719F APD

Monte Carlo Modeling of Spin FETs Controlled by Spin-Orbit Interaction

A method for Monte Carlo simulation of 2D spin-polarized electron transport in III-V semiconductor heterojunction FETs is presented. In the simulation, the dynamics of the electrons in coordinate and momentum space is treated semiclassically. The density matrix description of the spin is incorporated in the Monte Carlo method to account for the spin polarization dynamics. The spin-orbit interaction in the spin FET leads to both coherent evolution and dephasing of the electron spin polarization. Spin-independent scattering mechanisms, including optical phonons, acoustic phonons and ionized impurities, are implemented in the simulation. The electric field is determined self-consistently from the charge distribution resulting from the electron motion. Description of the Monte Carlo scheme is given and simulation results are reported for temperatures in the range 77-300 K.Comment: 18 pages, 7 figure