An On-line Diagnostic Method for Open-circuit Switch Faults in NPC Multilevel Converters

On-line condition monitoring is of paramount importance for multilevel converters used in safety-critical applications. A novel on-line diagnostic method for detecting open-circuit switch faults in neutral-point-clamped (NPC) multilevel converters is introduced in this paper. The principle of this method is based on monitoring the abnormal variation of the dc-bus neutral-point current in combination with the existing information on instantaneous switching states and phase currents. Advantages of this method include simpler implementation and faster detection speed compared to other existing diagnostic methods in the literature. In this method, only one additional current sensor is required for measuring the dc-bus neutral-point current, therefore the implementation cost is low. Simulation and experimental results based on a lab-scale 50 kVA adjustable speed drive (ASD) with a three-level NPC inverter validate the efficacy of this novel diagnostic method

Power balancing and dc fault ride through in DC grids with dc hubs and wind farms

Acknowledgment This project was funded by European Research Council under the Ideas program in FP7; grant no 259328, 2010.Peer reviewedPostprin

Evaluation of a Local Fault Detection Algorithm for HVDC Systems

A great increase in the amount of energy generated from clean and renewable sources integrated in the electric power system is expected worldwide in the coming years. High Voltage Direct Current (HVDC) systems are seen as a promising alternative to the traditional Alternating Current (AC) systems for the expansion of the electric power system. However, to achieve this vision, there are some remaining challenges regarding HVDC systems which need to be solved. One of the main challenges is related to fault detection and location in HVDC grids. This paper reviews the main protection algorithms available and presents the evaluation of a local fault detection algorithm for DC faults in a multi-terminal Voltage Source Conversion (VSC) based HVDC grid. The paper analyses the influence of the DC voltage sampling frequency and the cable length in the performance of the algorithm. © 2019, European Association for the Development of Renewable Energy, Environment and Power Quality (EA4EPQ).The authors thank the support from the Spanish Ministry of Economy, Industry and Competitiveness (project ENE2016-79145-R AEI/FEDER, UE) and GISEL research group IT1083-16), as well as from the University of the Basque Country UPV/EHU (research group funding PPG17/23)

Fully equipped half bridge building block for fast prototyping of switching power converters

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Coordination of MMCs with hybrid DC circuit breakers for HVDC grid protection

A high-voltage direct-current (HVDC) grid protection strategy to suppress dc fault currents and prevent overcurrent in the arms of modular multi-level converters (MMCs) is proposed in this paper. The strategy is based on the coordination of half-bridge (HB) MMCs and hybrid dc circuit breakers (DCCBs). This is achieved by allowing MMC submodules (SMs) to be temporarily bypassed prior to the opening of the DCCBs. Once the fault is isolated by the DCCBs, the MMCs will restore to normal operation. The performance of the proposed method is assessed and compared to when MMCs are blocked and when no corrective action is taken. To achieve this, an algorithm for fault detection and discrimination is used and its impact on MMC bypassing is discussed. To assess its effectiveness, the proposed algorithm is demonstrated in PSCAD/EMTDC using a four-terminal HVDC system. Simulation results show that the coordination of MMCs and DCCBs can significantly reduce dc fault current and the absorbed current energy by more than 70 and 90% respectively, while keeping MMC arm currents small

Stacking of IGBT devices for fast high-voltage high-current applications

The development of solid-state switches for pulsed power applications has been of considerable interest since high-power semiconductor devices became available. However, the use of solid-state devices in the pulsed power environment has usually been restricted by device limitations in either their voltage/current ratings or their switching speed. The stacking of fast medium-voltage devices, such as IGBTs, to improve the voltage rating, makes solid-state switches a potential substitute for conventional switches such as hard glass tubes, thyratrons and spark gaps. Previous studies into stacking IGBTs have been concerned with specific devices, designed or modified particularly for a specific application. The present study is concerned with stacking fast and commercially available IGBTs and their application to the generation of pulsed electric field and the switching of a high intensity Xenon flashlamp. The aim of the first section of the present study was to investigate different solid-state switching devices with a stacking capability and this led to the choice of the Insulated Gate Bipolar Transistor (IGBT). It was found that the collector-emitter voltage decreases in two stages in most of the available IGBTs. Experiments and simulation showed that a reason for this behaviour could be fast variations in device parasitic parameters particularly gate-collector capacitance. Choosing the proper IGBT, as well as dealing with problems such as unbalanced voltage and current sharing, are important aspects of stacking and these were reported in this study. Dynamic and steady state voltage imbalances caused by gate driver delay was controlled using an array of synchronised pulses, isolated with magnetic and optical coupling. The design procedure for pulse transformers, optical modules, the drive circuits required to minimise possible jitter and time delays, and over-voltage protection of IGBT modules are also important aspects of stacking, and were reported in this study. The second purpose of this study was to investigate the switching performance of both magnetically coupled and optically coupled stacks, in pulse power applications such as Pulse Electric Field (PEF) inactivation of microorganisms and UV light inactivation of food-related pathogenic bacteria. The stack, consisting of 50 1.2 kV IGBTs with the voltage and current capabilities of 10 kV, 400 A, was incorporated into a coaxial cable Blumlein type pulse - generator and its performance was successfully tested with both magnetic and optical coupling. As a second application of the switch, a fully integrated solid-state Marx generator was designed and assembled to drive a UV flashlamp for the purpose of microbiological inactivation. The generator has an output voltage rating of 3 kV and a peak current rating of 2 kA, although the modular approach taken allows for a number of voltage and current ratings to be achieved. The performance of the switch was successfully tested over a period of more than 10⁶ pulses when it was applied to pulse a xenon flashlamp.The development of solid-state switches for pulsed power applications has been of considerable interest since high-power semiconductor devices became available. However, the use of solid-state devices in the pulsed power environment has usually been restricted by device limitations in either their voltage/current ratings or their switching speed. The stacking of fast medium-voltage devices, such as IGBTs, to improve the voltage rating, makes solid-state switches a potential substitute for conventional switches such as hard glass tubes, thyratrons and spark gaps. Previous studies into stacking IGBTs have been concerned with specific devices, designed or modified particularly for a specific application. The present study is concerned with stacking fast and commercially available IGBTs and their application to the generation of pulsed electric field and the switching of a high intensity Xenon flashlamp. The aim of the first section of the present study was to investigate different solid-state switching devices with a stacking capability and this led to the choice of the Insulated Gate Bipolar Transistor (IGBT). It was found that the collector-emitter voltage decreases in two stages in most of the available IGBTs. Experiments and simulation showed that a reason for this behaviour could be fast variations in device parasitic parameters particularly gate-collector capacitance. Choosing the proper IGBT, as well as dealing with problems such as unbalanced voltage and current sharing, are important aspects of stacking and these were reported in this study. Dynamic and steady state voltage imbalances caused by gate driver delay was controlled using an array of synchronised pulses, isolated with magnetic and optical coupling. The design procedure for pulse transformers, optical modules, the drive circuits required to minimise possible jitter and time delays, and over-voltage protection of IGBT modules are also important aspects of stacking, and were reported in this study. The second purpose of this study was to investigate the switching performance of both magnetically coupled and optically coupled stacks, in pulse power applications such as Pulse Electric Field (PEF) inactivation of microorganisms and UV light inactivation of food-related pathogenic bacteria. The stack, consisting of 50 1.2 kV IGBTs with the voltage and current capabilities of 10 kV, 400 A, was incorporated into a coaxial cable Blumlein type pulse - generator and its performance was successfully tested with both magnetic and optical coupling. As a second application of the switch, a fully integrated solid-state Marx generator was designed and assembled to drive a UV flashlamp for the purpose of microbiological inactivation. The generator has an output voltage rating of 3 kV and a peak current rating of 2 kA, although the modular approach taken allows for a number of voltage and current ratings to be achieved. The performance of the switch was successfully tested over a period of more than 10⁶ pulses when it was applied to pulse a xenon flashlamp

Investigation of FACTS devices to improve power quality in distribution networks

Flexible AC transmission system (FACTS) technologies are power electronic solutions that improve power transmission through enhanced power transfer volume and stability, and resolve quality and reliability issues in distribution networks carrying sensitive equipment and non-linear loads. The use of FACTS in distribution systems is still in its infancy. Voltages and power ratings in distribution networks are at a level where realistic FACTS devices can be deployed. Efficient power converters and therefore loss minimisation are crucial prerequisites for deployment of FACTS devices. This thesis investigates high power semiconductor device losses in detail. Analytical closed form equations are developed for conduction loss in power devices as a function of device ratings and operating conditions. These formulae have been shown to predict losses very accurately, in line with manufacturer data. The developed formulae enable circuit designers to quickly estimate circuit losses and determine the sensitivity of those losses to device voltage and current ratings, and thus select the optimal semiconductor device for a specific application. It is shown that in the case of majority carrier devices (such as power MOSFETs), the conduction power loss (at rated current) increases linearly in relation to the varying rated current (at constant blocking voltage), but is a square root of the variable blocking voltage when rated current is fixed. For minority carrier devices (such as a pin diode or IGBT), a similar relationship is observed for varying current, however where the blocking voltage is altered, power losses are derived as a square root with an offset (from the origin). Finally, this thesis conducts a power loss-oriented evaluation of cascade type multilevel converters suited to reactive power compensation in 11kV and 33kV systems. The cascade cell converter is constructed from a series arrangement of cell modules. Two prospective structures of cascade type converters were compared as a case study: the traditional type which uses equal-sized cells in its chain, and a second with a ternary relationship between its dc-link voltages. Modelling (at 81 and 27 levels) was carried out under steady state conditions, with simplified models based on the switching function and using standard circuit simulators. A detailed survey of non punch through (NPT) and punch through (PT) IGBTs was completed for the purpose of designing the two cascaded converters. Results show that conduction losses are dominant in both types of converters in NPT and PT IGBTs for 11kV and 33kV systems. The equal-sized converter is only likely to be useful in one case (27-levels in the 33kV system). The ternary-sequence converter produces lower losses in all other cases, and this is especially noticeable for the 81-level converter operating in an 11kV network

Development of Si Device Based Power Converters for High Temperature Operation in HEV Applications

In this dissertation, the feasibility of operating Si devices at 200 ˚C [degree Celsius] is investigated and the guidelines on the development of a high temperature Si converter for operating with 105 ˚C high temperature liquid coolant in hybrid electrical vehicle (HEV) applications are provided. First, the characterization of a Si IGBT operating at 200 ˚C junction temperatures is presented. It is shown that the commercial 175 ˚C Si IGBT under test can be successfully switched at an elevated junction temperature of 200 ˚C with increased but acceptable losses. Second, a comprehensive evaluation of Si IGBT ruggedness at high temperature operation is provided through experiments. The important criteria considering latch-up immunity, short circuit capability, and avalanche capability are given to ensure the safe and reliable operation of Si IGBTs at 200 ˚C. Third, the feasibility of operating Si devices based converters continuously at the junction temperature of 200 ˚C is demonstrated. A Si IGBT phase-leg module is developed for 200 ˚C operation utilizing high temperature packaging technologies and appropriate thermal management. Fourth, a method is proposed to measure the junction temperatures of IGBTs during the converter operation using IGBT short circuit current. The calibration experiments show that the short circuit current has good sensitivity, linearity and selectivity, making the method suitable for use as temperature sensitive electrical parameter (TSEP). By connecting a temperature measurement unit to the converter and giving a short circuit pulse during the converter operation, the IGBT junction temperature can be measured. Fifth, a 30 kW Si IGBT based three-phase converter has been developed for operating at the junction temperature of 200 ˚C with the high temperature coolant in HEV applications. The experimental results demonstrate that the three-phase converter can operate at junction temperature of 200 ˚C with the 105 ˚C high temperature coolant, thus eliminating the need for the additional 65 ˚C coolant in HEV. Additionally, the emerging 600 V GaN HEMT is investigated as a potential replacement of Si devices for high efficiency and high temperature in future HEV applications

Health Condition Monitoring and Fault-Tolerant Operation of Adjustable Speed Drives

Adjustable speed drives (ASDs) have been extensively used in industrial applications over the past few decades because of their benefits of energy saving and control flexibilities. However, the wider penetration of ASD systems into industrial applications is hindered by the lack of health monitoring and fault-tolerant operation techniques, especially in safety-critical applications. In this dissertation, a comprehensive portfolio of health condition monitoring and fault-tolerant operation strategies is developed and implemented for multilevel neutral-point-clamped (NPC) power converters in ASDs. Simulations and experiments show that these techniques can improve power cycling lifetime of power transistors, on-line diagnosis of switch faults, and fault-tolerant capabilities.The first contribution of this dissertation is the development of a lifetime improvement Pulse Width Modulation (PWM) method which can significantly extend the power cycling lifetime of Insulated Gate Bipolar Transistors (IGBTs) in NPC inverters operating at low frequencies. This PWM method is achieved by injecting a zero-sequence signal with a frequency higher than that of the IGBT junction-to-case thermal time constants. This, in turn, lowers IGBT junction temperatures at low output frequencies. Thermal models, simulation and experimental verifications are carried out to confirm the effectiveness of this PWM method. As a second contribution of this dissertation, a novel on-line diagnostic method is developed for electronic switch faults in power converters. Targeted at three-level NPC converters, this diagnostic method can diagnose any IGBT faults by utilizing the information on the dc-bus neutral-point current and switching states. This diagnostic method only requires one additional current sensor for sensing the neutral-point current. Simulation and experimental results verified the efficacy of this diagnostic method.The third contribution consists of the development and implementation of a fault-tolerant topology for T-Type NPC power converters. In this fault-tolerant topology, one additional phase leg is added to the original T-Type NPC converter. In addition to providing a fault-tolerant solution to certain switch faults in the converter, this fault-tolerant topology can share the overload current with the original phase legs, thus increasing the overload capabilities of the power converters. A lab-scale 30-kVA ASD based on this proposed topology is implemented and the experimental results verified its benefits