385 research outputs found

    Low-voltage low-power fast-settling CMOS operational transconductance amplifiers for switchedcapacitor applications

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    ABSTRACT This paper presents a new fully differential operational transconductance amplifier (OTA) for low-voltage and fastsettling switched-capacitor circuits in digital CMOS technology. The proposed two-stage OTA is a hybrid class A/AB that combines a folded cascode as the first stage with active current mirrors as the second stage. It employs a hybrid cascode compensation scheme, merged Ahuja and improved Ahuja style compensations, for fast settling

    Low-Voltage Ultra-Low-Power Current Conveyor Based on Quasi-Floating Gate Transistors

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    The field of low-voltage low-power CMOS technology has grown rapidly in recent years; it is an essential prerequisite particularly for portable electronic equipment and implantable medical devices due to its influence on battery lifetime. Recently, significant improvements in implementing circuits working in the low-voltage low-power area have been achieved, but circuit designers face severe challenges when trying to improve or even maintain the circuit performance with reduced supply voltage. In this paper, a low-voltage ultra-low-power current conveyor second generation CCII based on quasi-floating gate transistors is presented. The proposed circuit operates at a very low supply voltage of only ±0.4 V with rail-to-rail voltage swing capability and a total quiescent power consumption of mere 9.5 ”W. Further, the proposed circuit is not only able to process the AC signal as it's usual at quasi-floating gate transistors but also the DC which extends the applicability of the proposed circuit. In conclusion, an application example of the current-mode quadrature oscillator is presented. PSpice simulation results using the 0.18 ”m TSMC CMOS technology are included to confirm the attractive properties of the proposed circuit

    Design methodology for general enhancement of a single-stage self-compensated folded-cascode operational transconductance amplifiers in 65 nm CMOS process

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    The problems resulting from the use of nano-MOSFETs in the design of operational trans-conductance amplifiers (OTAs) lead to an urgent need for new design techniques to produce high-performance metrics OTAs suitable for very high-frequency applications. In this paper, the enhancement techniques and design equations for the proposed single-stage folded-cascode operational trans-conductance amplifiers (FCOTA) are presented for the enhancement of its various performance metrics. The proposed single-stage FCOTA adopts the folded-cascode (FC) current sources with cascode current mirrors (CCMs) load. Using 65 nm complementary metal-oxide semiconductor (CMOS) process from predictive technology model (PTM), the HSPICE2019-based simulation results show that the designed single-stage FCOTA can achieve a high open-loop differential-mode DC voltage gain of 65.64 dB, very high unity-gain bandwidth of 263 MHz, very high stability with phase-margin of 73°, low power dissipation of 0.97 mW, very low DC input-offset voltage of 0.14 uV, high swing-output voltages from −0.97 to 0.91 V, very low equivalent input-referred noise of 15.8 nV/Hz, very high common-mode rejection ratio of 190.64 dB, very high positive/negative slew-rates of 157.5/58.3 V⁄us, very fast settling-time of 5.1 ns, high extension input common-mode range voltages from −0.44to 1 V, and high positive/negative power-supply rejection ratios of 75.5/68.8 dB. The values of the small/large-signal figures-of-merits (s) are the highest when compared to other reported FCOTAs in the literature

    A Survey of Non-conventional Techniques for Low-voltage Low-power Analog Circuit Design

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    Designing integrated circuits able to work under low-voltage (LV) low-power (LP) condition is currently undergoing a very considerable boom. Reducing voltage supply and power consumption of integrated circuits is crucial factor since in general it ensures the device reliability, prevents overheating of the circuits and in particular prolongs the operation period for battery powered devices. Recently, non-conventional techniques i.e. bulk-driven (BD), floating-gate (FG) and quasi-floating-gate (QFG) techniques have been proposed as powerful ways to reduce the design complexity and push the voltage supply towards threshold voltage of the MOS transistors (MOST). Therefore, this paper presents the operation principle, the advantages and disadvantages of each of these techniques, enabling circuit designers to choose the proper design technique based on application requirements. As an example of application three operational transconductance amplifiers (OTA) base on these non-conventional techniques are presented, the voltage supply is only ±0.4 V and the power consumption is 23.5 ”W. PSpice simulation results using the 0.18 ”m CMOS technology from TSMC are included to verify the design functionality and correspondence with theory

    Super class AB RFC OTA with adaptive local common-mode feedback

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    A super class AB recycling folded cascode operational transconductance amplifier is presented. It employs local common-mode feedback using two matched tuneable active resistors, allowing to adapt the amplifier to different process variations and loads. Measurement results from a test chip prototype fabricated in a 0.5 ÎŒm CMOS process validate the proposal

    Circuits for Analog Signal Processing Employing Unconventional Active Elements

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    DisertačnĂ­ prĂĄce se zabĂœvĂĄ zavĂĄděnĂ­m novĂœch struktur modernĂ­ch aktivnĂ­ch prvkĆŻ pracujĂ­cĂ­ch v napěƄovĂ©m, proudovĂ©m a smĂ­ĆĄenĂ©m reĆŸimu. Funkčnost a chovĂĄnĂ­ těchto prvkĆŻ byly ověƙeny prostƙednictvĂ­m SPICE simulacĂ­. V tĂ©to prĂĄci je zahrnuta ƙada simulacĂ­, kterĂ© dokazujĂ­ pƙesnost a dobrĂ© vlastnosti těchto prvkĆŻ, pƙičemĆŸ velkĂœ dĆŻraz byl kladen na to, aby tyto prvky byly schopny pracovat pƙi nĂ­zkĂ©m napĂĄjecĂ­m napětĂ­, jelikoĆŸ poptĂĄvka po pƙenosnĂœch elektronickĂœch zaƙízenĂ­ch a implantabilnĂ­ch zdravotnickĂœch pƙístrojĂ­ch stĂĄle roste. Tyto pƙístroje jsou napĂĄjeny bateriemi a k tomu, aby byla prodlouĆŸena jejich ĆŸivotnost, trend navrhovĂĄnĂ­ analogovĂœch obvodĆŻ směƙuje k stĂĄle větĆĄĂ­mu sniĆŸovĂĄnĂ­ spotƙeby a napĂĄjecĂ­ho napětĂ­. HlavnĂ­m pƙínosem tĂ©to prĂĄce je nĂĄvrh novĂœch CMOS struktur: CCII (Current Conveyor Second Generation) na zĂĄkladě BD (Bulk Driven), FG (Floating Gate) a QFG (Quasi Floating Gate); DVCC (Differential Voltage Current Conveyor) na zĂĄkladě FG, transkonduktor na zĂĄkladě novĂ© techniky BD_QFG (Bulk Driven_Quasi Floating Gate), CCCDBA (Current Controlled Current Differencing Buffered Amplifier) na zĂĄkladě GD (Gate Driven), VDBA (Voltage Differencing Buffered Amplifier) na zĂĄkladě GD a DBeTA (Differential_Input Buffered and External Transconductance Amplifier) na zĂĄkladě BD. DĂĄle je uvedeno několik zajĂ­mavĂœch aplikacĂ­ uĆŸĂ­vajĂ­cĂ­ch vĂœĆĄe jmenovanĂ© prvky. ZĂ­skanĂ© vĂœsledky simulacĂ­ odpovĂ­dajĂ­ teoretickĂœm pƙedpokladĆŻm.The dissertation thesis deals with implementing new structures of modern active elements working in voltage_, current_, and mixed mode. The functionality and behavior of these elements have been verified by SPICE simulation. Sufficient numbers of simulated plots are included in this thesis to illustrate the precise and strong behavior of those elements. However, a big attention to implement active elements by utilizing LV LP (Low Voltage Low Power) techniques is given in this thesis. This attention came from the fact that growing demand of portable electronic equipments and implantable medical devices are pushing the development towards LV LP integrated circuits because of their influence on batteries lifetime. More specifically, the main contribution of this thesis is to implement new CMOS structures of: CCII (Current Conveyor Second Generation) based on BD (Bulk Driven), FG (Floating Gate) and QFG (Quasi Floating Gate); DVCC (Differential Voltage Current Conveyor) based on FG; Transconductor based on new technique of BD_QFG (Bulk Driven_Quasi Floating Gate); CCCDBA (Current Controlled Current Differencing Buffered Amplifier) based on conventional GD (Gate Driven); VDBA (Voltage Differencing Buffered Amplifier) based on GD. Moreover, defining new active element i.e. DBeTA (Differential_Input Buffered and External Transconductance Amplifier) based on BD is also one of the main contributions of this thesis. To confirm the workability and attractive properties of the proposed circuits many applications were exhibited. The given results agree well with the theoretical anticipation.

    Global design of analog cells using statistical optimization techniques

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    We present a methodology for automated sizing of analog cells using statistical optimization in a simulation based approach. This methodology enables us to design complex analog cells from scratch within reasonable CPU time. Three different specification types are covered: strong constraints on the electrical performance of the cells, weak constraints on this performance, and design objectives. A mathematical cost function is proposed and a bunch of heuristics is given to increase accuracy and reduce CPU time to minimize the cost function. A technique is also presented to yield designs with reduced variability in the performance parameters, under random variations of the transistor technological parameters. Several CMOS analog cells with complexity levels up to 48 transistors are designed for illustration. Measurements from fabricated prototypes demonstrate the suitability of the proposed methodology
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