Systematic Comparison of HF CMOS Transconductors

Transconductors are commonly used as active elements in high-frequency (HF) filters, amplifiers, mixers, and oscillators. This paper reviews transconductor design by focusing on the V-I kernel that determines the key transconductor properties. Based on bandwidth considerations, simple V-I kernels with few or no internal nodes are preferred. In a systematic way, virtually all simple kernels published in literature are generated. This is done in two steps: 1) basic 3-terminal transconductors are covered and 2) then five different techniques to combine two of them in a composite V-I kernel. In order to compare transconductors in a fair way, a normalized signal-to-noise ratio (NSNR) is defined. The basic V-I kernels and the five classes of composite V-I kernels are then compared, leading to insight in the key mechanisms that affect NSNR. Symbolic equations are derived to estimate NSNR, while simulations with more advanced MOSFET models verify the results. The results show a strong tradeoff between NSNR and transconductance tuning range. Resistively generated MOSFETs render the best NSNR results and are robust for future technology developments

A systematic approach to circuit design and analysis: classification of Two-VCCS Circuits

This paper discusses a systematic approach to the design and analysis of circuits, using a transconductor or voltage controlled current source (VCCS) as a building block. It is shown that two independent Kirchhoff relations among the VCCS voltages and currents play a crucial role in establishing a unique transfer function in two-port circuits with two VCCSs. A class of two VCCS circuits is defined, which can be subdivided into three main classes and 14 subclasses, based on different imposable sets of two Kirchhoff relations. The classification is useful for circuit synthesis and analysis, as it reveals all the basically different ways to exploit two VCCS's, and allows for a unified analysis of classes of circuits. To exemplify this, all complementary metal-oxide-semiconductor (CMOS) V-I converter kernels, based on two matched MOS transistor (MOST)-VCCSs, are generated and analyzed with respect to distortion. It is shown that dozens of published transconductor circuits can be classified in only four classes, with essentially different distortion behavio

A 0.18μm CMOS low-noise elliptic low-pass continuous-time filter

This paper presents a seventh order low-pass continuous-time elliptic filter for use in a high-performance wireline communication receiver. As an additional attribute, the filter provides programmable boost in the pass-band to counteract high frequency components attenuation. The filter shows a nominal cutoff frequency of fc=34 MHz , less than 1dB ripple in the pass-band, and a maximum stop-band rejection of 65dB. The filter also exhibits low noise feature (peak root spectral noise density below 56nV√Hz) and high linearity (more than 64dB of MTPR for a DMT signal of 0.5Vpp amplitude). It has been designed in a 0.18μm CMOS technology and it is compliant with industrial operation conditions (-40 to 85° C temperature variation and ± 5% power supply deviation). Simulations show a typical power consumption of 450 mW @ 1.8V supply.Ministerio de Ciencia y Tecnología TIC2003-0235

A 0.18 μm CMOS low noise, highly linear continuous-time seventh-order elliptic low-pass filter

This paper presents a fast procedure for the system-level evaluation of noise and distortion in continuous-time integrated filters. The presented approach is based on Volterra's series theory and matrix algebra manipulation. This procedure has been integrated in a constrained optimization routine to improve the dynamic range of the filter while keeping the area and power consumption at a minimum. The proposed approach is demonstrated with the design, from system- to physical-level, of a seventh-order low-pass continuous-time elliptic filter for a high-performance broadband power-line communication receiver. The filter shows a nominal cut-off frequency of fc = 34MHz, less than 1dB ripple in the pass-band, and a maximum stop-band rejection of 65dB. Additionally, the filter features 12dB programmable boost in the pass-band to counteract high frequency components attenuation. Taking into account its wideband transfer characteristic, the filter has been implemented using G m-C techniques. The basic building block of its structure, the transconductor, uses a source degeneration topology with local feedback for linearity improving and shows a worst-case intermodulation distortion of -70 dB for two tones close to the passband edge, separated by 1MHz, with 70mV of amplitude. The filter combines very low noise (peak root spectral noise density below 56nV/√Hz) and high linearity (more than 64dB of MTPR for a DMT signal of 0.5Vpp amplitude) properties. The filter has been designed in a 0.18μm CMOS technology and it is compliant with industrial operation conditions (-40 to 85°C temperature variation and ±5% power supply deviation). The filter occupies 13mm2 and exhibits a typical power consumption of 450 mW from a 1.8V voltage supply.Ministerio de Ciencia y Tecnología TIC2003-0235

CMOS design of chaotic oscillators using state variables: a monolithic Chua's circuit

This paper presents design considerations for monolithic implementation of piecewise-linear (PWL) dynamic systems in CMOS technology. Starting from a review of available CMOS circuit primitives and their respective merits and drawbacks, the paper proposes a synthesis approach for PWL dynamic systems, based on state-variable methods, and identifies the associated analog operators. The GmC approach, combining quasi-linear VCCS's, PWL VCCS's, and capacitors is then explored regarding the implementation of these operators. CMOS basic building blocks for the realization of the quasi-linear VCCS's and PWL VCCS's are presented and applied to design a Chua's circuit IC. The influence of GmC parasitics on the performance of dynamic PWL systems is illustrated through this example. Measured chaotic attractors from a Chua's circuit prototype are given. The prototype has been fabricated in a 2.4- mu m double-poly n-well CMOS technology, and occupies 0.35 mm/sup 2/, with a power consumption of 1.6 mW for a +or-2.5-V symmetric supply. Measurements show bifurcation toward a double-scroll Chua's attractor by changing a bias current

Integrated chaos generators

This paper surveys the different design issues, from mathematical model to silicon, involved on the design of integrated circuits for the generation of chaotic behavior.Comisión Interministerial de Ciencia y Tecnología 1FD97-1611(TIC)European Commission ESPRIT 3110

Low-Voltage Ultra-Low-Power Current Conveyor Based on Quasi-Floating Gate Transistors

The field of low-voltage low-power CMOS technology has grown rapidly in recent years; it is an essential prerequisite particularly for portable electronic equipment and implantable medical devices due to its influence on battery lifetime. Recently, significant improvements in implementing circuits working in the low-voltage low-power area have been achieved, but circuit designers face severe challenges when trying to improve or even maintain the circuit performance with reduced supply voltage. In this paper, a low-voltage ultra-low-power current conveyor second generation CCII based on quasi-floating gate transistors is presented. The proposed circuit operates at a very low supply voltage of only ±0.4 V with rail-to-rail voltage swing capability and a total quiescent power consumption of mere 9.5 µW. Further, the proposed circuit is not only able to process the AC signal as it's usual at quasi-floating gate transistors but also the DC which extends the applicability of the proposed circuit. In conclusion, an application example of the current-mode quadrature oscillator is presented. PSpice simulation results using the 0.18 µm TSMC CMOS technology are included to confirm the attractive properties of the proposed circuit

Low-voltage tunable pseudo-differential transconductor with high linearity

A novel tunable transconductor is presented. Input transistors operate in the triode region to achieve programmable voltage-to-current conversion. These transistors are kept in the triode region by a novel negative feedback loop which features simplicity, low voltage requirements, and high output resistance. A linearity analysis is carried out which demonstrates how the proposed transconductance tuning scheme leads to high linearity in a wide transconductance range. Measurement results for a 0.5 μm CMOS implementation of the transconductor show a transconductance tuning range of more than a decade (15 μA/V to 165 μA/V) and a total harmonic distortion of −67 dB at 1 MHz for an input of 1 Vpp and a supply voltage of 1.8 V