The PreAmplifier ShAper for the ALICE TPC-Detector

In this paper the PreAmplifier ShAper (PASA) for the Time Projection Chamber (TPC) of the ALICE experiment at LHC is presented. The ALICE TPC PASA is an ASIC that integrates 16 identical channels, each consisting of Charge Sensitive Amplifiers (CSA) followed by a Pole-Zero network, self-adaptive bias network, two second-order bridged-T filters, two non-inverting level shifters and a start-up circuit. The circuit is optimized for a detector capacitance of 18-25 pF. For an input capacitance of 25 pF, the PASA features a conversion gain of 12.74 mV/fC, a peaking time of 160 ns, a FWHM of 190 ns, a power consumption of 11.65 mW/ch and an equivalent noise charge of 244e + 17e/pF. The circuit recovers smoothly to the baseline in about 600 ns. An integral non-linearity of 0.19% with an output swing of about 2.1 V is also achieved. The total area of the chip is 18 mm$^2$ and is implemented in AMS's C35B3C1 0.35 micron CMOS technology. Detailed characterization test were performed on about 48000 PASA circuits before mounting them on the ALICE TPC front-end cards. After more than two years of operation of the ALICE TPC with p-p and Pb-Pb collisions, the PASA has demonstrated to fulfill all requirements

Performance enhancement in the desing of amplifier and amplifier-less circuits in modern CMOS technologies.

In the context of nowadays CMOS technology downscaling and the increasing demand of high performance electronics by industry and consumers, analog design has become a major challenge. On the one hand, beyond others, amplifiers have traditionally been a key cell for many analog systems whose overall performance strongly depends on those of the amplifier. Consequently, still today, achieving high performance amplifiers is essential. On the other hand, due to the increasing difficulty in achieving high performance amplifiers in downscaled modern technologies, a different research line that replaces the amplifier by other more easily achievable cells appears: the so called amplifier-less techniques. This thesis explores and contributes to both philosophies. Specifically, a lowvoltage differential input pair is proposed, with which three multistage amplifiers in the state of art are designed, analysed and tested. Moreover, a structure for the implementation of differential switched capacitor circuits, specially suitable for comparator-based circuits, that features lower distortion and less noise than the classical differential structures is proposed, an, as a proof of concept, implemented in a ΔΣ modulator

HIGH PERFORMANCE CMOS WIDE-BAND RF FRONT-END WITH SUBTHRESHOLD OUT OF BAND SENSING

In future, the radar/satellite wireless communication devices must support multiple standards and should be designed in the form of system-on-chip (SoC) so that a significant reduction happen on cost, area, pins, and power etc. However, in such device, the design of a fully on-chip CMOS wideband receiver front-end that can process several radar/satellite signal simultaneously becomes a multifold complex problem. Further, the inherent high-power out-of-band (OB) blockers in radio spectrum will make the receiver more non-linear, even sometimes saturate the receiver. Therefore, the proper blocker rejection techniques need to be incorporated. The primary focus of this research work is the development of a CMOS high-performance low noise wideband receiver architecture with a subthreshold out of band sensing receiver. Further, the various reconfigurable mixer architectures are proposed for performance adaptability of a wideband receiver for incoming standards. Firstly, a high-performance low- noise bandwidthenhanced fully differential receiver is proposed. The receiver composed of a composite transistor pair noise canceled low noise amplifier (LNA), multi-gate-transistor (MGTR) trans-conductor amplifier, and passive switching quad followed by Tow Thomas bi-quad second order filter based tarns-impedance amplifier. An inductive degenerative technique with low-VT CMOS architecture in LNA helps to improve the bandwidth and noise figure of the receiver. The full receiver system is designed in UMC 65nm CMOS technology and measured. The packaged LNA provides a power gain 12dB (including buffer) with a 3dB bandwidth of 0.3G – 3G, noise figure of 1.8 dB having a power consumption of 18.75mW with an active area of 1.2mm*1mm. The measured receiver shows 37dB gain at 5MHz IF frequency with 1.85dB noise figure and IIP3 of +6dBm, occupies 2mm*1.2mm area with 44.5mW of power consumption. Secondly, a 3GHz-5GHz auxiliary subthreshold receiver is proposed to estimate the out of blocker power. As a redundant block in the system, the cost and power minimization of the auxiliary receiver are achieved via subthreshold circuit design techniques and implementing the design in higher technology node (180nm CMOS). The packaged auxiliary receiver gives a voltage gain of 20dB gain, the noise figure of 8.9dB noise figure, IIP3 of -10dBm and 2G-5GHz bandwidth with 3.02mW power consumption. As per the knowledge, the measured results of proposed main-high-performancereceiver and auxiliary-subthreshold-receiver are best in state of art design. Finally, the various viii reconfigurable mixers architectures are proposed to reconfigure the main-receiver performance according to the requirement of the selected communication standard. The down conversion mixers configurability are in the form of active/passive and Input (RF) and output (IF) bandwidth reconfigurability. All designs are simulated in 65nm CMOS technology. To validate the concept, the active/ passive reconfigurable mixer configuration is fabricated and measured. Measured result shows a conversion gain of 29.2 dB and 25.5 dB, noise figure of 7.7 dB and 10.2 dB, IIP3 of -11.9 dBm and 6.5 dBm in active and passive mode respectively. It consumes a power 9.24mW and 9.36mW in passive and active case with a bandwidth of 1 to 5.5 GHz and 0.5 to 5.1 GHz for active/passive case respectively

A capacitor-less low drop-out voltage regulator with fast transient response

Power management has had an ever increasing role in the present electronic industry. Battery powered and handheld applications require power management techniques to extend the life of the battery and consequently the operation life of the device. Most systems incorporate several voltage regulators which supply various subsystems and provide isolation among such subsystems. Low dropout (LDO) voltage regulators are generally used to supply low voltage, low noise analog circuitry. Each LDO regulator demands a large external capacitor, in the range of a few microfarads, to perform. These external capacitors occupy valuable board space, increase the IC pin count, and prohibit system-on-chip (SoC) solutions. The presented research provides a solution to the present bulky external capacitor LDO voltage regulators with a capacitor-less LDO architecture. The large external capacitor was completely removed and replaced with a reasonable 100pF internal output capacitor, allowing for greater power system integration for SoC applications. A new compensation scheme is presented that provides both a fast transient response and full range ac stability from a 0mA to 50mA load current. A 50mA, 2.8V, capacitor-less LDO voltage regulator was fabricated in a TSMC 0.35um CMOS technology, consuming only 65uA of ground current with a dropout voltage of 200mV. Experimental results show that the proposed capacitor-less LDO voltage regulator exceeds the current published works in both transient response and ac stability. The architecture is also less sensitive to process variation and loading conditions. Thus, the presented capacitor-less LDO voltage regulator is suitable for SoC solutions