A Novel Cyclic Time to Digital Converter Based on Triple-Slope Interpolation and Time Amplification

This paper investigates a novel cyclic time-to-digital converter (TDC) which employs triple-slope analog interpolation and time amplification techniques for digitizing the time interval between the rising edges of two input signals(Start and Stop). The proposed converter will be a 9-bit cyclic time-to-digital converter that does not use delay lines in its structure. Therefore, it has a low sensitivity to temperature, power supply and process (PVT) variations. The other advantages of the proposed converter are low circuit complexity, and high accuracy compared with the time-to-digital converters that have previously been proposed. Also, this converter improves the time resolution and the dynamic range. In the same resolution, linear range and dynamic range, the proposed cyclic TDC reduces the number of circuit elements compared with the converters that have a similar circuit structure. Thus, the converter reduces the chip area, the power consumption and the figure of merit (FoM). In this converter, the integral nonlinearity (INL) and differential nonlinearity (DNL) errors are reduced. In order to evaluate the idea, the proposed time-to-digital converter is designed in TSMC 45 nm CMOS technology and simulated. Comparison of the theoretical and simulation results confirms the benefits of the proposed TDC

Noise shaping Asynchronous SAR ADC based time to digital converter

Time-to-digital converters (TDCs) are key elements for the digitization of timing information in modern mixed-signal circuits such as digital PLLs, DLLs, ADCs, and on-chip jitter-monitoring circuits. Especially, high-resolution TDCs are increasingly employed in on-chip timing tests, such as jitter and clock skew measurements, as advanced fabrication technologies allow fine on-chip time resolutions. Its main purpose is to quantize the time interval of a pulse signal or the time interval between the rising edges of two clock signals. Similarly to ADCs, the performance of TDCs are also primarily characterized by Resolution, Sampling Rate, FOM, SNDR, Dynamic Range and DNL/INL. This work proposes and demonstrates 2nd order noise shaping Asynchronous SAR ADC based TDC architecture with highest resolution of 0.25 ps among current state of art designs with respect to post-layout simulation results. This circuit is a combination of low power/High Resolution 2nd Order Noise Shaped Asynchronous SAR ADC backend with simple Time to Amplitude converter (TAC) front-end and is implemented in 40nm CMOS technology. Additionally, special emphasis is given on the discussion on various current state of art TDC architectures.Electrical and Computer Engineerin

A 10-bit Charge-Redistribution ADC Consuming 1.9 μW at 1 MS/s

This paper presents a 10 bit successive approximation ADC in 65 nm CMOS that benefits from technology scaling. It meets extremely low power requirements by using a charge-redistribution DAC that uses step-wise charging, a dynamic two-stage comparator and a delay-line-based controller. The ADC requires no external reference current and uses only one external supply voltage of 1.0 V to 1.3 V. Its supply current is proportional to the sample rate (only dynamic power consumption). The ADC uses a chip area of approximately 115--225 μm2. At a sample rate of 1 MS/s and a supply voltage of 1.0 V, the 10 bit ADC consumes 1.9 μW and achieves an energy efficiency of 4.4 fJ/conversion-step

A selectable-bandwidth 3.5 mW, 0.03 mm(2) self-oscillating Sigma Delta modulator with 71 dB dynamic range at 5 MHz and 65 dB at 10 MHz bandwidth

In this paper we present a dual-mode third order continuous time Sigma Delta modulator that combines noise shaping and pulse-width-modulation (PWM). In our 0.18 micro-m CMOS prototype chip the clock frequency equals 1 GHz, but the PWM carrier is only around 125 MHz. By adjusting the loop filter, the ADC bandwidth can be set to 5 or 10 MHz. In the 5 MHz mode the peak SNDR equals 64 dB and the dynamic range 71 dB. In the 10 MHz mode the peak SNDR equals 58 dB and the DR 65 dB. This performance is achieved at an attractively low silicon area of 0.03 mm^2 and a power consumption of 3.5 mW

Variation Resilient Adaptive Controller for Subthreshold Circuits

Subthreshold logic is showing good promise as a viable ultra-low-power circuit design technique for power-limited applications. For this design technique to gain widespread adoption, one of the most pressing concerns is how to improve the robustness of subthreshold logic to process and temperature variations. We propose a variation resilient adaptive controller for subthreshold circuits with the following novel features: new sensor based on time-to-digital converter for capturing the variations accurately as digital signatures, and an all-digital DC-DC converter incorporating the sensor capable of generating an operating operating Vdd from 0V to 1.2V with a resolution of 18.75mV, suitable for subthreshold circuit operation. The benefits of the proposed controller is reflected with energy improvement of up to 55% compared to when no controller is employed. The detailed implementation and validation of the proposed controller is discussed

Low power VCO-based analog-to-digital conversion

textThis dissertation presents novel two stage ADC architecture with a VCO based second stage. With the scaling of the supply voltages in modern CMOS process it is difficult to design high gain operational amplifiers needed for traditional voltage domain two-stage analog to digital converters. However time resolution continues to improve with the advancement in CMOS technology making VCO-based ADC more attractive. The nonlinearity in voltage-to-frequency transfer function is the biggest challenge in design of VCO based ADC. The hybrid approach used in this work uses a voltage domain first stage to determine the most significant bits and uses a VCO based second stage to quantize the small residue obtained from first stage. The architecture relaxes the gain requirement on the the first stage opamp and also relaxes the linearity requirements on the second stage VCO. The prototype ADC built in 65nm CMOS process achieves 63.7dB SNDR in 10MHz bandwidth while only consuming 1.1mW of power. The performance of the prototype chip is comparable to the state-of-art in terms of figure-of-merit but this new architecture uses significantly less circuit area.Electrical and Computer Engineerin

High-speed Low-voltage CMOS Flash Analog-to-Digital Converter for Wideband Communication System-on-a-Chip

With higher-level integration driven by increasingly complex digital systems and downscaling CMOS processes available, system-on-a-chip (SoC) is an emerging technology of low power, high cost effectiveness and high reliability and is exceedingly attractive for applications in high-speed data conversion wireless and wideband communication systems. This research presents a novel ADC comparator design methodology; the speed and performance of which is not restricted by the supply voltage reduction and device linearity deterioration in scaling-down CMOS processes. By developing a dynamic offset suppression technique and a circuit optimization method, the comparator can achieve a 3 dB frequency of 2 GHz in 130 nanometer (nm) CMOS process. Combining this new comparator design and a proposed pipelined thermometer-Gray- binary encoder designed by the DCVSPG logic, a high-speed, low-voltage clocked-digital- comparator (CDC) pipelined CMOS flash ADC architecture is proposed for wideband communication SoC. This architecture has advantages of small silicon area, low power, and low cost. Three CDC-based pipelined CMOS flash ADCs were implemented in 130 nm CMOS process and their experimental results are reported: 1. 4-b, 2.5-GSPS ADC: SFDR of 21.48-dB, SNDR of 15.99-dB, ENOB of 2.4-b, ERBW of 1-GHz, power of 7.9-mW, and area of 0.022-mm2. 2. 4-b, 4-GSPS ADC: SFDR of 25-dB, SNDR of 18.6-dB, ENOB of 2.8-b, ERBW of 2-GHz, power of 11-mW. 3. 6-b, 4-GSPS ADC: SFDR of 48-dB at a signal frequency of 11.72-MHz, SNDR of 34.43-dB, ENOB of 5.4-b, power of 28-mW. An application of the proposed CDC-based pipelined CMOS flash ADC is 1-GHz bandwidth, 2.5-GSPS digital receiver on a chip. To verify the performance of the receiver, a mixed-signal block-level simulation and verification flow was built in Cadence AMS integrated platform. The verification results of the digital receiver using a 4-b 2.5-GSPS CDC-based pipelined CMOS ADC, a 256-point, 12-point kernel function FFT and a frequency detection logic show that two tone signals up to 1125 MHz can be detected and discriminated. A notable contribution of this research is that the proposed ADC architecture and the comparator design with dynamic offset suppression and optimization are extremely suitable for future VDSM CMOS processes and make all-digital receiver SoC design practical

An On-chip PVT Resilient Short Time Measurement Technique

As the CMOS technology nodes continue to shrink, the challenges of developing manufacturing tests for integrated circuits become more difficult to address. To detect parametric faults of new generation of integrated circuits such as 3D ICs, on-chip short-time intervals have to be accurately measured. The accuracy of an on-chip time measurement module is heavily affected by Process, supply Voltage, and Temperature (PVT) variations. This work presents a new on-chip time measurement scheme where the undesired effects of PVT variations are attenuated significantly. To overcome the effects of PVT variations on short-time measurement, phase locking methodology is utilized to implement a robust Vernier delay line. A prototype Time-to-Digital Converter (TDC) has been fabricated using TSMC 0.180 µm CMOS technology and experimental measurements have been carried out to verify the performance parameters of the TDC. The measurement results indicate that the proposed solution reduces the effects of PVT variations by more than tenfold compared to a conventional on-chip TDC. A coarse-fine time interval measurement scheme which is resilient to the PVT variations is also proposed. In this approach, two Delay Locked Loops (DLLs) are utilized to minimize the effects of PVT on the measured time intervals. The proposed scheme has been implemented using CMOS 65nm technology. Simulation results using Advanced Design System (ADS) indicate that the measurement resolution varies by less than 0.1ps with ±15% variations of the supply voltage. The proposed method also presents a robust performance against process and temperature variations. The measurement accuracy changes by a maximum of 0.05ps from slow to fast corners. The implemented TDC presents a robust performance against temperature variations too and its measurement accuracy varies a few femto-seconds from -40 ºC to +100 ºC. The principle of robust short-time measurement was used in practice to design and implement a state-of-the-art Coordinate Measuring Machine (CMM) for an industry partner to measure geometrical features of transmission parts with micrometer resolution. The solution developed for the industry partner has resulted in a patent and a product in the market. The on-chip short-time measurement technology has also been utilized to develop a solution to detect Hardware Trojans

High Frequency, High Linearity and Low Noise Digital to Time Converter for Phase Adjustment

Nowadays, fast communication systems have become vital for our lifestyle. As a result, the digital PLL fulfils a very important role as frequency synthesizer, demodulator or distributor of clock signals in microprocessors and similar digital circuits. Thus, the correction of the signal using a phase adjust- ment is essential for the good operation of the PLL. In this work, it is proposed a variable slope digital to time converter (DTC), as a programmable delay line, used for the correction of the phase of a digital PLL. The work is focused on the study of the performance of the circuit, through the evaluation of fundamental parameters such as RMS jitter, line- arity, resolution and delay range. Accordingly, it is employed a 4-bit topology using 130 nm MOSFET technology. The in- tended DTC takes advantage of CMOS inverters, due to their simplicity and low noise, and capacitors, for the programmable delay RC network. The DTC functioning is based on the activation of switching transistors to trigger the programmable capacitors, through a code to define the number of capacitors that introduce delay. The circuit is complemented with a simple CMOS inverter as a comparator that triggers when the threshold voltage is attained and an output buffer employed to correct the slopes of the signal. The proposed DTC proposed is a single-ended architecture that achieves 52.50 fs RMS jitter, and the resulting DNL and INL are equivalent to 0.1124 LSB and 0.09773 LSB, respectively. The 4-bit de- lay line has a resolution of 15.2 ps, an area of 0.018 mm2 and a power consumption of 62.8 μW from a 1.2 V low dropout regulator (LDO).Atualmente, os sistemas de comunicação rápida tornaram-se vitais para o nosso estilo de vida. Como resultado, a PLL digital apresenta um papel importante em funções como sintetizador de frequên- cia, demodulador ou distribuidor de sinais de relógio de microprocessadores ou circuitos digitais seme- lhantes. Assim, a correção do sinal utilizando um ajuste de fase é essencial para o bom funcionamento da PLL. Neste trabalho, é proposto um conversor digital para tempo de inclinação de curva variável, como uma linha de atraso programável, utilizada para corrigir a fase de uma PLL digital. Este trabalho é focado no estudo da performance do dispositivo, através da avaliação de parâme- tros fundamentais como RMS jitter, linearidade, resolução e range de atraso. Desta forma, a topologia implementada utiliza 4 bits e tecnologia MOSFET 130 . O conversor digital para tempo é criado utilizando inversores CMOS, que têm as vantagens de apresentar simplicidade e baixo ruído, e condensadores, utilizados para programar a rede de atraso de RC. Este funciona com base na ativação de transístores, empregues como interruptores para acionar os conden- sadores programáveis, através de um código que define o número de condensadores ligados que intro- duzem atraso. O circuito é complementado com um inversor CMOS como comparador que é acionado quando a voltagem de threshold é atingida e um buffer de saída implementado para corrigir a inclinação das curvas. O respetivo conversor apresenta uma arquitetura com uma única saída que é capaz de atingir 52.50 fs RMS jitter, e possuí DNL e INL equivalente a 0.1124 LSB e 0.09773 LSB, respetivamente. A linha de atraso de 4 bits tem uma resolução de 15.2 ps, uma área de 0.018 mm2 e um consumo de potência de 62.8 μW vindo de um regulador de baixa queda de tensão de 1.2 V