Ultra-low noise, high-frame rate readout design for a 3D-stacked CMOS image sensor

Due to the switch from CCD to CMOS technology, CMOS based image sensors have become smaller, cheaper, faster, and have recently outclassed CCDs in terms of image quality. Apart from the extensive set of applications requiring image sensors, the next technological breakthrough in imaging would be to consolidate and completely shift the conventional CMOS image sensor technology to the 3D-stacked technology. Stacking is recent and an innovative technology in the imaging field, allowing multiple silicon tiers with different functions to be stacked on top of each other. The technology allows for an extreme parallelism of the pixel readout circuitry. Furthermore, the readout is placed underneath the pixel array on a 3D-stacked image sensor, and the parallelism of the readout can remain constant at any spatial resolution of the sensors, allowing extreme low noise and a high-frame rate (design) at virtually any sensor array resolution. The objective of this work is the design of ultra-low noise readout circuits meant for 3D-stacked image sensors, structured with parallel readout circuitries. The readout circuit’s key requirements are low noise, speed, low-area (for higher parallelism), and low power. A CMOS imaging review is presented through a short historical background, followed by the description of the motivation, the research goals, and the work contributions. The fundamentals of CMOS image sensors are addressed, as a part of highlighting the typical image sensor features, the essential building blocks, types of operation, as well as their physical characteristics and their evaluation metrics. Following up on this, the document pays attention to the readout circuit’s noise theory and the column converters theory, to identify possible pitfalls to obtain sub-electron noise imagers. Lastly, the fabricated test CIS device performances are reported along with conjectures and conclusions, ending this thesis with the 3D-stacked subject issues and the future work. A part of the developed research work is located in the Appendices.Devido à mudança da tecnologia CCD para CMOS, os sensores de imagem em CMOS tornam se mais pequenos, mais baratos, mais rápidos, e mais recentemente, ultrapassaram os sensores CCD no que respeita à qualidade de imagem. Para além do vasto conjunto de aplicações que requerem sensores de imagem, o próximo salto tecnológico no ramo dos sensores de imagem é o de mudar completamente da tecnologia de sensores de imagem CMOS convencional para a tecnologia “3D-stacked”. O empilhamento de chips é relativamente recente e é uma tecnologia inovadora no campo dos sensores de imagem, permitindo vários planos de silício com diferentes funções poderem ser empilhados uns sobre os outros. Esta tecnologia permite portanto, um paralelismo extremo na leitura dos sinais vindos da matriz de píxeis. Além disso, num sensor de imagem de planos de silício empilhados, os circuitos de leitura estão posicionados debaixo da matriz de píxeis, sendo que dessa forma, o paralelismo pode manter-se constante para qualquer resolução espacial, permitindo assim atingir um extremo baixo ruído e um alto debito de imagens, virtualmente para qualquer resolução desejada. O objetivo deste trabalho é o de desenhar circuitos de leitura de coluna de muito baixo ruído, planeados para serem empregues em sensores de imagem “3D-stacked” com estruturas altamente paralelizadas. Os requisitos chave para os circuitos de leitura são de baixo ruído, rapidez e pouca área utilizada, de forma a obter-se o melhor rácio. Uma breve revisão histórica dos sensores de imagem CMOS é apresentada, seguida da motivação, dos objetivos e das contribuições feitas. Os fundamentos dos sensores de imagem CMOS são também abordados para expor as suas características, os blocos essenciais, os tipos de operação, assim como as suas características físicas e suas métricas de avaliação. No seguimento disto, especial atenção é dada à teoria subjacente ao ruído inerente dos circuitos de leitura e dos conversores de coluna, servindo para identificar os possíveis aspetos que dificultem atingir a tão desejada performance de muito baixo ruído. Por fim, os resultados experimentais do sensor desenvolvido são apresentados junto com possíveis conjeturas e respetivas conclusões, terminando o documento com o assunto de empilhamento vertical de camadas de silício, junto com o possível trabalho futuro

Charge integration successive approximation analog-to-digital converter for focal plane applications using a single amplifier

An analog-to-digital converter for on-chip focal-plane image sensor applications. The analog-to-digital converter utilizes a single charge integrating amplifier in a charge balancing architecture to implement successive approximation analog-to-digital conversion. This design requires minimal chip area and has high speed and low power dissipation for operation in the 2-10 bit range. The invention is particularly well suited to CMOS on-chip applications requiring many analog-to-digital converters, such as column-parallel focal-plane architectures

Pulse frequency modulated DROICs with reduced quantization noise employing extended counting method

Reducing the system size and weight is a very competitive advantage in today’s IR market. A continuously growing effort has been shown to achieve digital output ROICs over the last decade with a primary concern to reduce the overall imaging system size and power by eliminating off chip ADCs and precise analog buffers as well as reducing the size of periphery boards. There is an unnamed industry standard of 20mK NETD for military IR imaging applications. A lower value is always desired to improve image quality or for track and search systems higher correct decision probabilities. Photon noise is the primary noise source and follow shot noise behavior and ideal SNR is limited with the square root of the stored charges. The limiting issue for higher SNR is due the limited charge handling capacity in a small pixel area. Recent works have shown DROICs with very high charge handling capacities on the order of giga electrons and SNR values as high as 90dB. The drawbacks of these works are the high quantization noise which makes their use limited to high flux scenes or low frame rate applications and high power dissipation which limits the use to small or moderate size array dimensions. In order to overcome these issues, this thesis has proposed circuit architectures with quantization noise levels lower than 200 electrons with 22 bit representation for a charge handling capacity of 2.34Ge-. The architecture relies on PFM pixel followed by a novel per pixel residue measurement method. A 32x32 prototype array has been fabricated and tested for verification of the proposed architecture. Design considerations have been followed for 256x256 array with a high frame rate of 400Hz and power dissipation of 22.21mW and a peak SNR of 71dB. Additionally low power operation of the proposed DROIC architecture with respect to ordinary PFM DROICs has been analyzed

Low Power Analog to Digital Converters in Advanced CMOS Technology Nodes

The dissertation presents system and circuit solutions to improve the power efficiency and address high-speed design issues of ADCs in advanced CMOS technologies. For image sensor applications, a high-performance digitizer prototype based on column-parallel single-slope ADC (SS-ADC) topology for readout of a back-illuminated 3D-stacked CMOS image sensor is presented. To address the high power consumption issue in high-speed digital counters, a passing window (PW) based hybrid counter topology is proposed. To address the high column FPN under bright illumination conditions, a double auto-zeroing (AZ) scheme is proposed. The proposed techniques are experimentally verified in a prototype chip designed and fabricated in the TSMC 40 nm low-power CMOS process. The PW technique saves 52.8% of power consumption in the hybrid digital counters. Dark/bright column fixed pattern noise (FPN) of 0.0024%/0.028% is achieved employing the proposed double AZ technique for digital correlated double sampling (CDS). A single-column digitizer consumes total power of 66.8μW and occupies an area of 5.4 µm x 610 µm. For mobile/wireless receiver applications, this dissertation presents a low-power wide-bandwidth multistage noise-shaping (MASH) continuous-time delta-sigma modulator (CT-ΔΣM) employing finite impulse response (FIR) digital-to-analog converters (DACs) and encoder-embedded loop-unrolling (EELU) quantizers. The proposed MASH 1-1-1 topology is a cascade of three single-loop first-order CT-ΔΣM stages, each of which consists of an active-RC integrator, a current-steering DAC, and an EELU quantizer. An FIR filter in the main 1.5-bit DAC improves the modulator’s jitter sensitivity performance. FIR’s effect on the noise transfer function (NTF) of the modulator is compensated in the digital domain thanks to the MASH topology. Instead of employing a conventional analog direct feedback path, a 1.5-bit EELU quantizer based on multiplexing comparator outputs is proposed; this approach is suitable for highspeed operation together with power and area benefits. Fabricated in a 40-nm low-power CMOS technology, the modulator’s prototype achieves a 67.3 dB of signal-to-noise and distortion ratio (SNDR), 68 dB of signal-to-noise ratio (SNR), and 68.2 dB of dynamic range (DR) within 50.5 MHz of bandwidth (BW), while consuming 19 mW of total power (P). The proposed modulator features 161.5 dB of figure-of-merit (FOM), defined as FOM = SNDR + 10 log10 (BW/P)

Energy Efficient Techniques For Algorithmic Analog-To-Digital Converters

Analog-to-digital converters (ADCs) are key design blocks in state-of-art image, capacitive, and biomedical sensing applications. In these sensing applications, algorithmic ADCs are the preferred choice due to their high resolution and low area advantages. Algorithmic ADCs are based on the same operating principle as that of pipelined ADCs. Unlike pipelined ADCs where the residue is transferred to the next stage, an N-bit algorithmic ADC utilizes the same hardware N-times for each bit of resolution. Due to the cyclic nature of algorithmic ADCs, many of the low power techniques applicable to pipelined ADCs cannot be directly applied to algorithmic ADCs. Consequently, compared to those of pipelined ADCs, the traditional implementations of algorithmic ADCs are power inefficient. This thesis presents two novel energy efficient techniques for algorithmic ADCs. The first technique modifies the capacitors' arrangement of a conventional flip-around configuration and amplifier sharing technique, resulting in a low power and low area design solution. The other technique is based on the unit multiplying-digital-to-analog-converter approach. The proposed approach exploits the power saving advantages of capacitor-shared technique and capacitor-scaled technique. It is shown that, compared to conventional techniques, the proposed techniques reduce the power consumption of algorithmic ADCs by more than 85\%. To verify the effectiveness of such approaches, two prototype chips, a 10-bit 5 MS/s and a 12-bit 10 MS/s ADCs, are implemented in a 130-nm CMOS process. Detailed design considerations are discussed as well as the simulation and measurement results. According to the simulation results, both designs achieve figures-of-merit of approximately 60 fJ/step, making them some of the most power efficient ADCs to date

Energy Efficient Techniques For Algorithmic Analog-To-Digital Converters

Analog-to-digital converters (ADCs) are key design blocks in state-of-art image, capacitive, and biomedical sensing applications. In these sensing applications, algorithmic ADCs are the preferred choice due to their high resolution and low area advantages. Algorithmic ADCs are based on the same operating principle as that of pipelined ADCs. Unlike pipelined ADCs where the residue is transferred to the next stage, an N-bit algorithmic ADC utilizes the same hardware N-times for each bit of resolution. Due to the cyclic nature of algorithmic ADCs, many of the low power techniques applicable to pipelined ADCs cannot be directly applied to algorithmic ADCs. Consequently, compared to those of pipelined ADCs, the traditional implementations of algorithmic ADCs are power inefficient. This thesis presents two novel energy efficient techniques for algorithmic ADCs. The first technique modifies the capacitors' arrangement of a conventional flip-around configuration and amplifier sharing technique, resulting in a low power and low area design solution. The other technique is based on the unit multiplying-digital-to-analog-converter approach. The proposed approach exploits the power saving advantages of capacitor-shared technique and capacitor-scaled technique. It is shown that, compared to conventional techniques, the proposed techniques reduce the power consumption of algorithmic ADCs by more than 85\%. To verify the effectiveness of such approaches, two prototype chips, a 10-bit 5 MS/s and a 12-bit 10 MS/s ADCs, are implemented in a 130-nm CMOS process. Detailed design considerations are discussed as well as the simulation and measurement results. According to the simulation results, both designs achieve figures-of-merit of approximately 60 fJ/step, making them some of the most power efficient ADCs to date

Fully-passive switched-capacitor techniques for high performance SAR ADC design

In recent years, SAR ADC becomes more and more popular in various low-power applications such as wireless sensors and low energy radios due to its circuit simplicity, high power efficiency, and scaling compatibility. However, its speed is limited by its successive approximation procedures and its power efficiency greatly reduces with the ADC resolution going beyond 10 bit. To address these issues, this thesis proposes to embed two techniques: 1) compressive sensing (CS) and 2) noise shaping (NS) to a conventional SAR ADC. The realization of both techniques are based on fully-passive switched-capacitor techniques. CS is a recently emerging sampling paradigm, stating that the sparsity of a signal can be exploited to reduce the ADC sampling rate below the Nyquist rate. Different from conventional CS frameworks which require dedicated analog CS encoders, this thesis proposes a fully-passive CS-SAR ADC architecture which only requires minor modification to a conventional SAR ADC. Two chips are fabricated in a 0.13 µm process to prove the concept. One chip is a single-channel CS-SAR ADC which can reduce the ADC conversion rate by 4 times, thus reducing the ADC power by 4 times. In many wireless sensing applications, multiple ADCs are commonly required to sense multi-channel signals such as multi-lead ECG sensing and parallel neural recording. Therefore, the other chip is a multi-channel CS-SAR ADC which can simultaneously convert 4-channel signals with a sampling rate of one channel’s Nyquist rate. At 0.8 V and 1 MS/s, both chips achieve an effective Walden FoM of around 5 fJ/conversion-step. This thesis also proposes a novel NS SAR ADC architecture that is simple, robust and low power for high-resolution applications. Compared to conventional ∆Σ ADCs, it replaces the power-hungry active integrator with a passive integrator which only requires one switch and two capacitors. Compared to previous 1st-order NS SAR ADC works, it achieves the best NS performance and can be easily extended to 2nd-order. A 1st-order 10-bit NS SAR ADC is fabricated in a 0.13 µm process. Through NS, SNDR increases by 6 dB with OSR doubled, achieving a 12- bit ENOB at OSR = 8. An improved version of a 2nd-order 9-bit NS SAR ADC is designed and simulated in a 40 nm process. The SNDR increases by 10 dB with OSR doubled, achieving a 14-bit ENOB at OSR = 16. At a bandwidth of 312.5 kHz, the Schreier FoM is 181 dB and the Walden FoM is 12.5 fJ/conversion-step, proving that the proposed NS SAR ADC architecture can achieve high resolution and high power efficiency simultaneously.Electrical and Computer Engineerin

Time interleaved counter analog to digital converters

The work explores extending time interleaving in A/D converters, by applying a high-level of parallelism to one of the slowest and simplest types of data-converters, the counter ADC. The motivation for the work is to realise high-performance re-configurable A/D converters for use in multi-standard and multi-PHY communication receivers with signal bandwidths in the 10s to 100s of MHz. The counter ADC requires only a comparator, a ramp signal, and a digital counter, where the comparator compares the sampled input against all possible quantisation levels sequentially. This work explores arranging counter ADCs in large time-interleaved arrays, building a Time Interleaved Counter (TIC) ADC. The key to realising a TIC ADC is distributed sampling and a global multi-phase ramp generator realised with a novel figure-of-8 rotating resistor ring. Furthermore Counter ADCs allow for re-configurability between effective sampling rate and resolution due to their sequential comparison of reference levels in conversion. A prototype TIC ADC of 128-channels was fabricated and measured in 0.13μm CMOS technology, where the same block can be configured to operate as a 7-bit 1GS/s, 8-bit 500MS/s, or 9-bit 250MS/s dataconverter. The ADC achieves a sub 400fJ/step FOM in all modes of configuration