14,337 research outputs found
Integrated Circuits for Programming Flash Memories in Portable Applications
Smart devices such as smart grids, smart home devices, etc. are infrastructure systems that connect the world around us more than before. These devices can communicate with each other and help us manage our environment. This concept is called the Internet of Things (IoT). Not many smart nodes exist that are both low-power and programmable. Floating-gate (FG) transistors could be used to create adaptive sensor nodes by providing programmable bias currents. FG transistors are mostly used in digital applications like Flash memories. However, FG transistors can be used in analog applications, too. Unfortunately, due to the expensive infrastructure required for programming these transistors, they have not been economical to be used in portable applications. In this work, we present low-power approaches to programming FG transistors which make them a good candidate to be employed in future wireless sensor nodes and portable systems. First, we focus on the design of low-power circuits which can be used in programming the FG transistors such as high-voltage charge pumps, low-drop-out regulators, and voltage reference cells. Then, to achieve the goal of reducing the power consumption in programmable sensor nodes and reducing the programming infrastructure, we present a method to program FG transistors using negative voltages. We also present charge-pump structures to generate the necessary negative voltages for programming in this new configuration
Aging-Aware Request Scheduling for Non-Volatile Main Memory
Modern computing systems are embracing non-volatile memory (NVM) to implement
high-capacity and low-cost main memory. Elevated operating voltages of NVM
accelerate the aging of CMOS transistors in the peripheral circuitry of each
memory bank. Aggressive device scaling increases power density and temperature,
which further accelerates aging, challenging the reliable operation of
NVM-based main memory. We propose HEBE, an architectural technique to mitigate
the circuit aging-related problems of NVM-based main memory. HEBE is built on
three contributions. First, we propose a new analytical model that can
dynamically track the aging in the peripheral circuitry of each memory bank
based on the bank's utilization. Second, we develop an intelligent memory
request scheduler that exploits this aging model at run time to de-stress the
peripheral circuitry of a memory bank only when its aging exceeds a critical
threshold. Third, we introduce an isolation transistor to decouple parts of a
peripheral circuit operating at different voltages, allowing the decoupled
logic blocks to undergo long-latency de-stress operations independently and off
the critical path of memory read and write accesses, improving performance. We
evaluate HEBE with workloads from the SPEC CPU2017 Benchmark suite. Our results
show that HEBE significantly improves both performance and lifetime of
NVM-based main memory.Comment: To appear in ASP-DAC 202
Prototype ATLAS IBL Modules using the FE-I4A Front-End Readout Chip
The ATLAS Collaboration will upgrade its semiconductor pixel tracking
detector with a new Insertable B-layer (IBL) between the existing pixel
detector and the vacuum pipe of the Large Hadron Collider. The extreme
operating conditions at this location have necessitated the development of new
radiation hard pixel sensor technologies and a new front-end readout chip,
called the FE-I4. Planar pixel sensors and 3D pixel sensors have been
investigated to equip this new pixel layer, and prototype modules using the
FE-I4A have been fabricated and characterized using 120 GeV pions at the CERN
SPS and 4 GeV positrons at DESY, before and after module irradiation. Beam test
results are presented, including charge collection efficiency, tracking
efficiency and charge sharing.Comment: 45 pages, 30 figures, submitted to JINS
Assessment and preliminary design of an energy buffer for regenerative braking in electric vehicles
Energy buffer systems, capable of storing the vehicle energy during braking and reusing this stored energy during acceleration, were examined. Some of these buffer systems when incorporated in an electric vehicle would result in an improvement in the performance and range under stop and go driving conditions. Buffer systems considered included flywheels, hydropneumatic, pneumatic, spring, and regenerative braking. Buffer ranking and rating criteria were established. Buffer systems were rated based on predicted range improvements, consumer acceptance, driveability, safety, reliability and durability, and initial and life cycle costs. A hydropneumatic buffer system was selected
ESTCube-1 electrical power system - design, implementation and testing
http://tartu.ester.ee/record=b2656616~S1*es
Ultra-low Quiescent Current NMOS Low Dropout Regulator With Fast Transient response for Always-On Internet-of-Things Applications
abstract: The increased adoption of Internet-of-Things (IoT) for various applications like smart home, industrial automation, connected vehicles, medical instrumentation, etc. has resulted in a large scale distributed network of sensors, accompanied by their power supply regulator modules, control and data transfer circuitry. Depending on the application, the sensor location can be virtually anywhere and therefore they are typically powered by a localized battery. To ensure long battery-life without replacement, the power consumption of the sensor nodes, the supply regulator and, control and data transmission unit, needs to be very low. Reduction in power consumption in the sensor, control and data transmission is typically done by duty-cycled operation such that they are on periodically only for short bursts of time or turn on only based on a trigger event and are otherwise powered down. These approaches reduce their power consumption significantly and therefore the overall system power is dominated by the consumption in the always-on supply regulator.
Besides having low power consumption, supply regulators for such IoT systems also need to have fast transient response to load current changes during a duty-cycled operation. Supply regulation using low quiescent current low dropout (LDO) regulators helps in extending the battery life of such power aware always-on applications with very long standby time. To serve as a supply regulator for such applications, a 1.24 µA quiescent current NMOS low dropout (LDO) is presented in this dissertation. This LDO uses a hybrid bias current generator (HBCG) to boost its bias current and improve the transient response. A scalable bias-current error amplifier with an on-demand buffer drives the NMOS pass device. The error amplifier is powered with an integrated dynamic frequency charge pump to ensure low dropout voltage. A low-power relaxation oscillator (LPRO) generates the charge pump clocks. Switched-capacitor pole tracking (SCPT) compensation scheme is proposed to ensure stability up to maximum load current of 150 mA for a low-ESR output capacitor range of 1 - 47µF. Designed in a 0.25 µm CMOS process, the LDO has an output voltage range of 1V – 3V, a dropout voltage of 240 mV, and a core area of 0.11 mm2.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201
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