182 research outputs found

    A 0.18-μm BICMOS 20-57 GHz Ultra-Wideband Low-Noise Amplifier Utilizing Frequency-Controlled Positive-Negative Feedback Technique

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    Silicon based complementary metallic oxide semiconductor (CMOS) and Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) radio frequency integrated circuits (RFICs), including microwave and millimeter-wave (MMW), are attractive for wireless communication and sensing systems due to their small chip size and facilitation in system-on-chip integration. One of the most important RFICs is the low-noise amplifier (LNA). The design of CMOS/BiCMOS wideband LNAs at MMW frequencies, especially those working across several decades of frequency, is challenging due to various issues. For instance, the device parasitic and inter-coupling between nearby elements in highly condensed chip areas limits the operating bandwidth and performance, and the conductive silicon substrates lead to the inevitable low quality factor of passive elements. In this work, a MMW BiCMOS ultra-wideband LNA across 20 to 57 GHz is presented along with the analysis, design and measurement results. To overcome the upper-band gain degradation and improve the in-band flatness, a novel frequency controlled positive-negative (P-N) feedback topology is adopted to modify the gain response by boosting the gain at the upper-band while suppressing that at the lower-band. To reduce overall power consumption, the first and second stages of the amplifier are stacked between supply voltage and DC ground to utilize the same DC current. At the output of amplifier, a shunt-peaking load stage is utilized to achieve wideband output matching. The designed ultra-wideband MMW LNA is fabricated in JAZZ 0.18-μm BiCMOS technology. It shows a measured power gain of 10.5 ± 0.5 dB, a noise figure between 5.1-7.0 dB, input and output return losses better than -10 and -15 dB, respectively, an input 1 dB compression point higher than -19 dBm, and an input third-order intercept point greater than -8 dBm. It dissipates 16.6 mW from 1.8 V DC supply and has a chip area of 700×400 μm^2

    A 0.18-μm BICMOS 20-57 GHz Ultra-Wideband Low-Noise Amplifier Utilizing Frequency-Controlled Positive-Negative Feedback Technique

    Get PDF
    Silicon based complementary metallic oxide semiconductor (CMOS) and Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) radio frequency integrated circuits (RFICs), including microwave and millimeter-wave (MMW), are attractive for wireless communication and sensing systems due to their small chip size and facilitation in system-on-chip integration. One of the most important RFICs is the low-noise amplifier (LNA). The design of CMOS/BiCMOS wideband LNAs at MMW frequencies, especially those working across several decades of frequency, is challenging due to various issues. For instance, the device parasitic and inter-coupling between nearby elements in highly condensed chip areas limits the operating bandwidth and performance, and the conductive silicon substrates lead to the inevitable low quality factor of passive elements. In this work, a MMW BiCMOS ultra-wideband LNA across 20 to 57 GHz is presented along with the analysis, design and measurement results. To overcome the upper-band gain degradation and improve the in-band flatness, a novel frequency controlled positive-negative (P-N) feedback topology is adopted to modify the gain response by boosting the gain at the upper-band while suppressing that at the lower-band. To reduce overall power consumption, the first and second stages of the amplifier are stacked between supply voltage and DC ground to utilize the same DC current. At the output of amplifier, a shunt-peaking load stage is utilized to achieve wideband output matching. The designed ultra-wideband MMW LNA is fabricated in JAZZ 0.18-μm BiCMOS technology. It shows a measured power gain of 10.5 ± 0.5 dB, a noise figure between 5.1-7.0 dB, input and output return losses better than -10 and -15 dB, respectively, an input 1 dB compression point higher than -19 dBm, and an input third-order intercept point greater than -8 dBm. It dissipates 16.6 mW from 1.8 V DC supply and has a chip area of 700×400 μm^2

    Low Noise Figure of Cascaded LNA at 5.8GHz Using T-Matching Network for WiMAX Applications

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    This project presents the low Noise Figure (NF) cascaded Low Noise Amplifier (LNA) at 5.8GHz using T-matching network applicable for WiMAX application. The amplifier used FHX76LP Low Noise SuperHEMT FET. The LNA designed used T-matching network consisting of lump reactive element at the input and the output terminal. The cascaded LNA produced noise figure of 1.3 dB and forward gain of 36.8 dB. The input reflection (S11) and output return loss (S22) are -12.4 dB and -12.3 dB respectively. The bandwidth of the amplifier is more than 1.24 GHz. The input sensitivity is compliant with the IEEE 802.16 standards

    Low Noise Amplifier at 5.8GHz with Cascode and Cascaded Techniques Using T-Matching Network for Wireless Applications

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    This paper present a 5.8 GHz low noise amplifier (LNA) design with cascode and cascaded techniques using T-matching network applicable for IEEE 802.16 standard. The amplifier use FHX76LP Low Noise SuperHEMT FET. The design simulation process is using Advance Design System (ADS) software. The cascode and cascaded low noise amplifier (LNA) produced gain of 36.52dB and noise figure (NF) at 1.2dB. The input reflection (S11) and output return loss (S22) are -21.1dB and -27.7dB respectively. The bandwidth of the amplifier is more than 1GHz. The input sensitivity is complying with the IEEE 802.16 standards

    High frequency of low noise amplifier architecture for WiMAX application: A review

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    The low noise amplifier (LNA) circuit is exceptionally imperative as it promotes and initializes general execution performance and quality of the mobile communication system. LNA's design in radio frequency (R.F.) circuit requires the trade-off numerous imperative features' including gain, noise figure (N.F.), bandwidth, stability, sensitivity, power consumption, and complexity. Improvements to the LNA's overall performance should be made to fulfil the worldwide interoperability for microwave access (WiMAX) specifications' prerequisites. The development of front-end receiver, particularly the LNA, is genuinely pivotal for long-distance communications up to 50 km for a particular system with particular requirements. The LNA architecture has recently been designed to concentrate on a single transistor, cascode, or cascade constrained in gain, bandwidth, and noise figure

    Design of LNA at 5.8GHz with Cascode and Cascaded Techniques Using T-Matching Network for Wireless Applications

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    This paper presents the design of low  noise amplifier with cascode and cascaded techniques using T-matching network applicable for IEEE 802.16 standards. The amplifier use FHX76LP Low Noise SuperHEMT FET. The design simulation process is using Advance Design System (ADS) software. The cascode and cascaded low noise amplifier (LNA) produced gain of 53.4dB and noise figure (NF) of 1.2dB. The input reflection (S11) and output return loss (S22) are -24.3dB and -23.9dB respectively. The input sensitivity is compliant with the IEEE 802.16 standards

    Design of LNA at 5.8GHz with Cascode and Cascaded Techniques Using T-Matching Network for Wireless Applications

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    This paper presents the design of low noise amplifier with cascode and cascaded techniques using T-matching network applicable for IEEE 802.16 standards. The amplifier use FHX76LP Low Noise SuperHEMT FET. The design simulation process is using Advance Design System (ADS) software. The cascode and cascaded low noise amplifier (LNA) produced gain of 53.4dB and noise figure (NF) of 1.2dB. The input reflection (S11) and output return loss (S22) are -24.3dB and -23.9dB respectively .The input sensitivity is compliant with the IEEE 802.16 standards

    The Cascode and Cascaded Techniques LNA at 5.8GHz Using T-Matching Network for WiMAX Applications

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    This project presents the cascode and cascaded techniques LNA at 5.8GHz using T-matching network applicable for WIMAX application. The amplifier uses FHX76LP Low Noise SuperHEMT FET. The LNA designed used T-matching network consisting of lump element reactive element at the input and the output terminal. The cascode and cascaded low noise amplifier (LNA) produced gain of 52.4dB and noise figure (NF) of 1.3dB. The input reflection (S11) and output return loss (S22) are -19.71dB and -10.07dB respectively. The bandwidth of the amplifier is more than 1.24GHz. The input sensitivity is compliant with the IEEE 802.16 standards

    The Cascode and Cascaded Techniques LNA at 5.8GHz Using T-Matching Network for WiMAX Applications

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    This project presents the cascode and cascaded techniques LNA at 5.8GHz using T-matching network applicable for WIMAX application. The amplifier uses FHX76LP Low Noise SuperHEMT FET. The LNA designed used T-matching network consisting of lump element reactive element at the input and the output terminal. The cascode and cascaded low noise amplifier (LNA) produced gain of 52.4dB and noise figure (NF) of 1.3dB. The input reflection (S11) and output return loss (S22) are -19.71dB and -10.07dB respectively. The bandwidth of the amplifier is more than 1.24GHz. The input sensitivity is compliant with the IEEE 802.16 standards

    Design and Simulation Low Noise Amplifier at 5.8GHz for WIMAX Applications

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    This paper presents a 5.8 GHz Low Noise Amplifier (LNA) design with cascode and cascaded techniques using T-matching network applicable for IEEE 802.16 standard. The amplifier use FHX76LP Low Noise SuperHEMT FET. The design simulation process is using Advance Design System (ADS) software. The cascode and cascaded low noise amplifier (LNA) produced gain of 53.1dB and noise figure (NF) of 1.17dB. The input reflection (S11) and output return loss (S22) are -19.77dB and -10.07dB respectively .The input sensitivity is compliant with the IEEE 802.16 standards
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