Design of sigma-delta modulators for analog-to-digital conversion intensively using passive circuits

This thesis presents the analysis, design implementation and experimental evaluation of passiveactive discrete-time and continuous-time Sigma-Delta (ΣΔ) modulators (ΣΔMs) analog-todigital converters (ADCs). Two prototype circuits were manufactured. The first one, a discrete-time 2nd-order ΣΔM, was designed in a 130 nm CMOS technology. This prototype confirmed the validity of the ultra incomplete settling (UIS) concept used for implementing the passive integrators. This circuit, clocked at 100 MHz and consuming 298 μW, achieves DR/SNR/SNDR of 78.2/73.9/72.8 dB, respectively, for a signal bandwidth of 300 kHz. This results in a Walden FoMW of 139.3 fJ/conv.-step and Schreier FoMS of 168 dB. The final prototype circuit is a highly area and power efficient ΣΔM using a combination of a cascaded topology, a continuous-time RC loop filter and switched-capacitor feedback paths. The modulator requires only two low gain stages that are based on differential pairs. A systematic design methodology based on genetic algorithm, was used, which allowed decreasing the circuit’s sensitivity to the circuit components’ variations. This continuous-time, 2-1 MASH ΣΔM has been designed in a 65 nm CMOS technology and it occupies an area of just 0.027 mm2. Measurement results show that this modulator achieves a peak SNR/SNDR of 76/72.2 dB and DR of 77dB for an input signal bandwidth of 10 MHz, while dissipating 1.57 mW from a 1 V power supply voltage. The ΣΔM achieves a Walden FoMW of 23.6 fJ/level and a Schreier FoMS of 175 dB. The innovations proposed in this circuit result, both, in the reduction of the power consumption and of the chip size. To the best of the author’s knowledge the circuit achieves the lowest Walden FOMW for ΣΔMs operating at signal bandwidth from 5 MHz to 50 MHz reported to date

RF MEMS reference oscillators platform for wireless communications

A complete platform for RF MEMS reference oscillator is built to replace bulky quartz from mobile devices, thus reducing size and cost. The design targets LTE transceivers. A low phase noise 76.8 MHz reference oscillator is designed using material temperature compensated AlN-on-silicon resonator. The thesis proposes a system combining piezoelectric resonator with low loading CMOS cross coupled series resonance oscillator to reach state-of-the-art LTE phase noise specifications. The designed resonator is a two port fundamental width extensional mode resonator. The resonator characterized by high unloaded quality factor in vacuum is designed with low temperature coefficient of frequency (TCF) using as compensation material which enhances the TCF from - 3000 ppm to 105 ppm across temperature ranges of -40˚C to 85˚C. By using a series resonant CMOS oscillator, phase noise of -123 dBc/Hz at 1 kHz, and -162 dBc/Hz at 1MHz offset is achieved. The oscillator’s integrated RMS jitter is 106 fs (10 kHz–20 MHz), consuming 850 μA, with startup time is 250μs, achieving a Figure-of-merit (FOM) of 216 dB. Electronic frequency compensation is presented to further enhance the frequency stability of the oscillator. Initial frequency offset of 8000 ppm and temperature drift errors are combined and further addressed electronically. A simple digital compensation circuitry generates a compensation word as an input to 21 bit MASH 1 -1-1 sigma delta modulator incorporated in RF LTE fractional N-PLL for frequency compensation. Temperature is sensed using low power BJT band-gap front end circuitry with 12 bit temperature to digital converter characterized by a resolution of 0.075˚C. The smart temperature sensor consumes only 4.6 μA. 700 MHz band LTE signal proved to have the stringent phase noise and frequency resolution specifications among all LTE bands. For this band, the achieved jitter value is 1.29 ps and the output frequency stability is 0.5 ppm over temperature ranges from -40˚C to 85˚C. The system is built on 32nm CMOS technology using 1.8V IO device

LOW PHASE NOISE CMOS PLL FREQUENCY SYNTHESIZER DESIGN AND ANALYSIS

The phase-locked loop (PLL) frequency synthesizer is a critical device of wireless transceivers. It works as a local oscillator (LO) for frequency translation and channel selection in the transceivers but suffers phase noise including reference spurs. In this dissertation for lowing phase noise and power consumption, efforts are placed on the new design of PLL components: VCOs, charge pumps and sigma delta modulators. Based on the analysis of the VCO phase noise generation mechanism and improving on the literature results, a design-oriented phase noise model for a complementary cross-coupled LC VCO is provided. The model reveals the relationship between the phase noise performance and circuit design parameters. Using this phase noise model, an optimized 2GHz low phase noise CMOS LC VCO is designed, simulated and fabricated. The theoretical analysis results are confirmed by the simulation and experimental results. With this VCO phase noise model, we also design a low phase noise, low gain wideband VCO with the typical VCO gain around 100MHz/V. Improving upon literature results, a complete quantitative analysis of reference spur is given in this dissertation. This leads to a design of a charge pump by using a negative feedback circuit and replica bias to reduce the current mismatch which causes the reference spur. In addition, low-impedance charge/discharge paths are provided to overcome the charge pump current glitches which also cause PLL spurs. With a large bit-width high order sigma delta modulator, the fractional-N PLL has fine frequency resolution and fast locking time. Based on an analysis of sigma delta modulator models introduced in this dissertation, a 3rd-order MASH 1-1-1 digital sigma delta modulator is designed. Pipelining techniques and true single phase clock (TSPC) techniques are used for saving power and area. Included is the design of a fully integrated 2.4GHz §¢ fractional-N CMOS PLL frequency synthesizer. It takes advantage of a sigma delta modulator to get a very fine frequency resolution and a relatively large loop bandwidth. This frequency synthesizer is a 4th-order charge pump PLL with 26MHz reference frequency. The loop bandwidth is about 150KHz, while the whole PLL phase noise is about -120dBc/Hz at 1MHz frequency offset

Ultra-low noise, high-frame rate readout design for a 3D-stacked CMOS image sensor

Due to the switch from CCD to CMOS technology, CMOS based image sensors have become smaller, cheaper, faster, and have recently outclassed CCDs in terms of image quality. Apart from the extensive set of applications requiring image sensors, the next technological breakthrough in imaging would be to consolidate and completely shift the conventional CMOS image sensor technology to the 3D-stacked technology. Stacking is recent and an innovative technology in the imaging field, allowing multiple silicon tiers with different functions to be stacked on top of each other. The technology allows for an extreme parallelism of the pixel readout circuitry. Furthermore, the readout is placed underneath the pixel array on a 3D-stacked image sensor, and the parallelism of the readout can remain constant at any spatial resolution of the sensors, allowing extreme low noise and a high-frame rate (design) at virtually any sensor array resolution. The objective of this work is the design of ultra-low noise readout circuits meant for 3D-stacked image sensors, structured with parallel readout circuitries. The readout circuit’s key requirements are low noise, speed, low-area (for higher parallelism), and low power. A CMOS imaging review is presented through a short historical background, followed by the description of the motivation, the research goals, and the work contributions. The fundamentals of CMOS image sensors are addressed, as a part of highlighting the typical image sensor features, the essential building blocks, types of operation, as well as their physical characteristics and their evaluation metrics. Following up on this, the document pays attention to the readout circuit’s noise theory and the column converters theory, to identify possible pitfalls to obtain sub-electron noise imagers. Lastly, the fabricated test CIS device performances are reported along with conjectures and conclusions, ending this thesis with the 3D-stacked subject issues and the future work. A part of the developed research work is located in the Appendices.Devido à mudança da tecnologia CCD para CMOS, os sensores de imagem em CMOS tornam se mais pequenos, mais baratos, mais rápidos, e mais recentemente, ultrapassaram os sensores CCD no que respeita à qualidade de imagem. Para além do vasto conjunto de aplicações que requerem sensores de imagem, o próximo salto tecnológico no ramo dos sensores de imagem é o de mudar completamente da tecnologia de sensores de imagem CMOS convencional para a tecnologia “3D-stacked”. O empilhamento de chips é relativamente recente e é uma tecnologia inovadora no campo dos sensores de imagem, permitindo vários planos de silício com diferentes funções poderem ser empilhados uns sobre os outros. Esta tecnologia permite portanto, um paralelismo extremo na leitura dos sinais vindos da matriz de píxeis. Além disso, num sensor de imagem de planos de silício empilhados, os circuitos de leitura estão posicionados debaixo da matriz de píxeis, sendo que dessa forma, o paralelismo pode manter-se constante para qualquer resolução espacial, permitindo assim atingir um extremo baixo ruído e um alto debito de imagens, virtualmente para qualquer resolução desejada. O objetivo deste trabalho é o de desenhar circuitos de leitura de coluna de muito baixo ruído, planeados para serem empregues em sensores de imagem “3D-stacked” com estruturas altamente paralelizadas. Os requisitos chave para os circuitos de leitura são de baixo ruído, rapidez e pouca área utilizada, de forma a obter-se o melhor rácio. Uma breve revisão histórica dos sensores de imagem CMOS é apresentada, seguida da motivação, dos objetivos e das contribuições feitas. Os fundamentos dos sensores de imagem CMOS são também abordados para expor as suas características, os blocos essenciais, os tipos de operação, assim como as suas características físicas e suas métricas de avaliação. No seguimento disto, especial atenção é dada à teoria subjacente ao ruído inerente dos circuitos de leitura e dos conversores de coluna, servindo para identificar os possíveis aspetos que dificultem atingir a tão desejada performance de muito baixo ruído. Por fim, os resultados experimentais do sensor desenvolvido são apresentados junto com possíveis conjeturas e respetivas conclusões, terminando o documento com o assunto de empilhamento vertical de camadas de silício, junto com o possível trabalho futuro

Analysis of Current Conveyor based Switched Capacitor Circuits for Application in ∆Σ Modulators

The reduction in supply voltage, loss of dynamic range and increased noise prevent the analog circuits from taking advantage of advanced technologies. Therefore the trend is to move all signal processing tasks to digital domain where advantages of technology scaling can be used. Due to this, there exists a need for data converters with large signal bandwidths, higher speeds and greater dynamic range to act as an interface between real world analog and digital signals. The Delta Sigma (∆Σ) modulator is a data converter that makes use of large sampling rates and noise shaping techniques to achieve high resolution in the band of interest. The modulator consists of analog integrators and comparators which create a modulated digital bit stream whose average represents the input value. Due to their simplicity, they are popular in narrow band receivers, medical and sensor applications. However Operational Amplifiers (Op-Amps) or Operational Transconductance Amplifiers (OTAs), which are commonly used in data converters, present a bottleneck. Due to low supply voltages, designers rely on folded cascode, multistage cascade and bulk driven topologies for their designs. Although the two stage or multistage cascade topologies offer good gain and bandwidth, they suffer from stability problems due to multiple stages and feedback requiring large compensation capacitors. Therefore other low voltage Switched-Capacitor (SC) circuit techniques were developed to overcome these problems, based on inverters, comparators and unity gain buffers. In this thesis we present an alternative approach to design of ∆Σ modulators using Second Generation Current Conveyors (CCIIs). The important feature of these modulators is the replacement of the traditional Op-Amp based SC integrators with CCII based SC integrators. The main design issues such as the effect of the non-idealities in the CCIIs are considered in the operation of SC circuits and solutions are proposed to cancel them. Design tradeoffs and guidelines for various components of the circuit are presented through analysis of existing and the proposed SC circuits. A two step adaptive calibration technique is presented which uses few additional components to measure the integrator input output characteristic and linearize it for providing optimum performance over a wide range of sampling frequencies while maintaining low power and area. The presented CCII integrator and calibration circuit are used in the design of a 4th order (2-2 cascade) ∆Σ modulator which has been fabricated in UMC 90nm/1V technology through Europractice. Experimental values for Signal to Noise+Distortion Ratio (SNDR), Dynamic Range (DR) and Figure Of Merit (FOM) show that the modulator can compete with state of art reconfigurable Discrete-Time (DT) architectures while using lower gain stages and less design complexity

Novel switched-capacitor circuits for delta-sigma modulators

Oversampled delta-sigma modulation is one of the widely used A/D conversion techniques for narrow bandwidth signals. In this study several new lowpass and bandpass delta-sigma modulator architectures as well as novel pseudo-N-path integrators that can be used in implementing these architectures are proposed. By using multiplexing techniques the new lowpass delta-sigma modulator architectures exchange higher clock rates with hardware complexity. For a given oversampling ratio (OSR), the multiplexed first-order delta-sigma modulator achieves a higher resolution. Guaranteed stability is a very desirable feature of these structures. The multi-loop delta-sigma modulator architecture similarly reduces the number of integrators needed to achieve high-resolution conversion for a given OSR. To ensure stability a quantizer with (N+1) bits must be used, where N is the number of loops, or in other words, the order of the delta-sigma modulator. Digital correction or randomizing techniques can be used to eliminate the performance reduction due to digital-to-analog- (D/A) converter nonlinearity error [59], [64]. Bandpass delta-sigma modulators are useful for applications such as AM radio receivers, spectrum analyzers, and digital wireless systems. Using z --> -z[superscript N] or z --> z[superscript N] mapping, a low pass delta-sigma modulator can be transformed to a bandpass one. One of the methods to implement the loop filters in bandpass delta-sigma modulators is to use Pseudo-N-Path (PNP) switched-capacitor (SC) integrators. The advantage is that the center frequency occurs exactly at an integer division of the sampling frequency because of the number of physical paths. To achieve maximum resolution, integrators that do not suffer from clock feedthrough peaks are needed. The proposed differential and single-ended novel PNP integrators address this problem [76]. To keep the opamp specifications less stringent while achieving high resolution, these PNP integrators have been further improved with gain compensation techniques [53]