321 research outputs found

    CMOS Design of Reconfigurable SoC Systems for Impedance Sensor Devices

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    La rápida evolución en el campo de los sensores inteligentes, junto con los avances en las tecnologías de la computación y la comunicación, está revolucionando la forma en que recopilamos y analizamos datos del mundo físico para tomar decisiones, facilitando nuevas soluciones que desempeñan tareas que antes eran inconcebibles de lograr.La inclusión en un mismo dado de silicio de todos los elementos necesarios para un proceso de monitorización y actuación ha sido posible gracias a los avances en micro (y nano) electrónica. Al mismo tiempo, la evolución de las tecnologías de procesamiento y micromecanizado de superficies de silicio y otros materiales complementarios ha dado lugar al desarrollo de sensores integrados compatibles con CMOS, lo que permite la implementación de matrices de sensores de alta densidad. Así, la combinación de un sistema de adquisición basado en sensores on-Chip, junto con un microprocesador como núcleo digital donde se puede ejecutar la digitalización de señales, el procesamiento y la comunicación de datos proporciona características adicionales como reducción del coste, compacidad, portabilidad, alimentación por batería, facilidad de uso e intercambio inteligente de datos, aumentando su potencial número de aplicaciones.Esta tesis pretende profundizar en el diseño de un sistema portátil de medición de espectroscopía de impedancia de baja potencia operado por batería, basado en tecnologías microelectrónicas CMOS, que pueda integrarse con el sensor, proporcionando una implementación paralelizable sin incrementar significativamente el tamaño o el consumo, pero manteniendo las principales características de fiabilidad y sensibilidad de un instrumento de laboratorio. Esto requiere el diseño tanto de la etapa de gestión de la energía como de las diferentes celdas que conforman la interfaz, que habrán de satisfacer los requisitos de un alto rendimiento a la par que las exigentes restricciones de tamaño mínimo y bajo consumo requeridas en la monitorización portátil, características que son aún más críticas al considerar la tendencia actual hacia matrices de sensores.A nivel de celdas, se proponen diferentes circuitos en un proceso CMOS de 180 nm: un regulador de baja caída de voltaje como unidad de gestión de energía, que proporciona una alimentación de 1.8 V estable, de bajo ruido, precisa e independiente de la carga para todo el sistema; amplificadores de instrumentación con una aproximación completamente diferencial, que incluyen una etapa de entrada de voltaje/corriente configurable, ganancia programable y ancho de banda ajustable, tanto en la frecuencia de corte baja como alta; un multiplicador para conformar la demodulación dual, que está embebido en el amplificador para optimizar consumo y área; y filtros pasa baja totalmente integrados, que actúan como extractores de magnitud de DC, con frecuencias de corte ajustables desde sub-Hz hasta cientos de Hz.<br /

    Delta-Sigma Modulator based Compact Sensor Signal Acquisition Front-end System

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    The proposed delta-sigma modulator (ΔΣ\Delta\SigmaM) based signal acquisition architecture uses a differential difference amplifier (DDA) customized for dual purpose roles, namely as instrumentation amplifier and as integrator of ΔΣ\Delta\SigmaM. The DDA also provides balanced high input impedance for signal from sensors. Further, programmable input amplification is obtained by adjustment of ΔΣ\Delta\SigmaM feedback voltage. Implementation of other functionalities, such as filtering and digitization have also been incorporated. At circuit level, a difference of transconductance of DDA input pairs has been proposed to reduce the effect of input resistor thermal noise of front-end R-C integrator of the ΔΣ\Delta\SigmaM. Besides, chopping has been used for minimizing effect of Flicker noise. The resulting architecture is an aggregation of functions of entire signal acquisition system within the single block of ΔΣ\Delta\SigmaM, and is useful for a multitude of dc-to-medium frequency sensing and similar applications that require high precision at reduced size and power. An implementation of this in 0.18-μ\mum CMOS process has been presented, yielding a simulated peak signal-to-noise ratio of 80 dB and dynamic range of 109dBFS in an input signal band of 1 kHz while consuming 100 μ\muW of power; with the measured signal-to-noise ratio being lower by about 9 dB.Comment: 13 pages, 16 figure

    High Frequency, High Linearity and Low Noise Digital to Time Converter for Phase Adjustment

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    Nowadays, fast communication systems have become vital for our lifestyle. As a result, the digital PLL fulfils a very important role as frequency synthesizer, demodulator or distributor of clock signals in microprocessors and similar digital circuits. Thus, the correction of the signal using a phase adjust- ment is essential for the good operation of the PLL. In this work, it is proposed a variable slope digital to time converter (DTC), as a programmable delay line, used for the correction of the phase of a digital PLL. The work is focused on the study of the performance of the circuit, through the evaluation of fundamental parameters such as RMS jitter, line- arity, resolution and delay range. Accordingly, it is employed a 4-bit topology using 130 nm MOSFET technology. The in- tended DTC takes advantage of CMOS inverters, due to their simplicity and low noise, and capacitors, for the programmable delay RC network. The DTC functioning is based on the activation of switching transistors to trigger the programmable capacitors, through a code to define the number of capacitors that introduce delay. The circuit is complemented with a simple CMOS inverter as a comparator that triggers when the threshold voltage is attained and an output buffer employed to correct the slopes of the signal. The proposed DTC proposed is a single-ended architecture that achieves 52.50 fs RMS jitter, and the resulting DNL and INL are equivalent to 0.1124 LSB and 0.09773 LSB, respectively. The 4-bit de- lay line has a resolution of 15.2 ps, an area of 0.018 mm2 and a power consumption of 62.8 μW from a 1.2 V low dropout regulator (LDO).Atualmente, os sistemas de comunicação rápida tornaram-se vitais para o nosso estilo de vida. Como resultado, a PLL digital apresenta um papel importante em funções como sintetizador de frequên- cia, demodulador ou distribuidor de sinais de relógio de microprocessadores ou circuitos digitais seme- lhantes. Assim, a correção do sinal utilizando um ajuste de fase é essencial para o bom funcionamento da PLL. Neste trabalho, é proposto um conversor digital para tempo de inclinação de curva variável, como uma linha de atraso programável, utilizada para corrigir a fase de uma PLL digital. Este trabalho é focado no estudo da performance do dispositivo, através da avaliação de parâme- tros fundamentais como RMS jitter, linearidade, resolução e range de atraso. Desta forma, a topologia implementada utiliza 4 bits e tecnologia MOSFET 130 . O conversor digital para tempo é criado utilizando inversores CMOS, que têm as vantagens de apresentar simplicidade e baixo ruído, e condensadores, utilizados para programar a rede de atraso de RC. Este funciona com base na ativação de transístores, empregues como interruptores para acionar os conden- sadores programáveis, através de um código que define o número de condensadores ligados que intro- duzem atraso. O circuito é complementado com um inversor CMOS como comparador que é acionado quando a voltagem de threshold é atingida e um buffer de saída implementado para corrigir a inclinação das curvas. O respetivo conversor apresenta uma arquitetura com uma única saída que é capaz de atingir 52.50 fs RMS jitter, e possuí DNL e INL equivalente a 0.1124 LSB e 0.09773 LSB, respetivamente. A linha de atraso de 4 bits tem uma resolução de 15.2 ps, uma área de 0.018 mm2 e um consumo de potência de 62.8 μW vindo de um regulador de baixa queda de tensão de 1.2 V

    Design of sigma-delta modulators for analog-to-digital conversion intensively using passive circuits

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    This thesis presents the analysis, design implementation and experimental evaluation of passiveactive discrete-time and continuous-time Sigma-Delta (ΣΔ) modulators (ΣΔMs) analog-todigital converters (ADCs). Two prototype circuits were manufactured. The first one, a discrete-time 2nd-order ΣΔM, was designed in a 130 nm CMOS technology. This prototype confirmed the validity of the ultra incomplete settling (UIS) concept used for implementing the passive integrators. This circuit, clocked at 100 MHz and consuming 298 μW, achieves DR/SNR/SNDR of 78.2/73.9/72.8 dB, respectively, for a signal bandwidth of 300 kHz. This results in a Walden FoMW of 139.3 fJ/conv.-step and Schreier FoMS of 168 dB. The final prototype circuit is a highly area and power efficient ΣΔM using a combination of a cascaded topology, a continuous-time RC loop filter and switched-capacitor feedback paths. The modulator requires only two low gain stages that are based on differential pairs. A systematic design methodology based on genetic algorithm, was used, which allowed decreasing the circuit’s sensitivity to the circuit components’ variations. This continuous-time, 2-1 MASH ΣΔM has been designed in a 65 nm CMOS technology and it occupies an area of just 0.027 mm2. Measurement results show that this modulator achieves a peak SNR/SNDR of 76/72.2 dB and DR of 77dB for an input signal bandwidth of 10 MHz, while dissipating 1.57 mW from a 1 V power supply voltage. The ΣΔM achieves a Walden FoMW of 23.6 fJ/level and a Schreier FoMS of 175 dB. The innovations proposed in this circuit result, both, in the reduction of the power consumption and of the chip size. To the best of the author’s knowledge the circuit achieves the lowest Walden FOMW for ΣΔMs operating at signal bandwidth from 5 MHz to 50 MHz reported to date

    Advances in Solid State Circuit Technologies

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    This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields

    Utilizing Unconventional CMOS Techniques for Low Voltage Low Power Analog Circuits Design for Biomedical Applications

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    Tato disertační práce se zabývá navržením nízkonapěťových, nízkopříkonových analogových obvodů, které používají nekonvenční techniky CMOS. Lékařská zařízení na bateriové napájení, jako systémy pro dlouhodobý fyziologický monitoring, přenosné systémy, implantovatelné systémy a systémy vhodné na nošení, musí být male a lehké. Kromě toho je nutné, aby byly tyto systémy vybaveny baterií s dlouhou životností. Z tohoto důvodu převládají v biomedicínských aplikacích tohoto typu nízkopříkonové integrované obvody. Nekonvenční techniky jako např. využití transistorů s řízeným substrátem (Bulk-Driven “BD”), s plovoucím hradlem (Floating-Gate “FG”), s kvazi plovoucím hradlem (Quasi-Floating-Gate “QFG”), s řízeným substrátem s plovoucím hradlem (Bulk-Driven Floating-Gate “BD-FG”) a s řízeným substrátem s kvazi plovoucím hradlem (Bulk-Driven Quasi-Floating-Gate “BD-QFG”), se v nedávné době ukázaly jako efektivní prostředek ke zjednodušení obvodového zapojení a ke snížení velikosti napájecího napětí směrem k prahovému napětí u tranzistorů MOS (MOST). V práci jsou podrobně představeny nejdůležitější charakteristiky nekonvenčních technik CMOS. Tyto techniky byly použity pro vytvoření nízko napěťových a nízko výkonových CMOS struktur u některých aktivních prvků, např. Operational Transconductance Amplifier (OTA) založené na BD, FG, QFG, a BD-QFG techniky; Tunable Transconductor založený na BD MOST; Current Conveyor Transconductance Amplifier (CCTA) založený na BD-QFG MOST; Z Copy-Current Controlled-Current Differencing Buffered Amplifier (ZC-CC-CDBA) založený na BD MOST; Winner Take All (WTA) and Loser Take All (LTA) založený na BD MOST; Fully Balanced Four-Terminal Floating Nullor (FBFTFN) založený na BD-QFG technice. Za účelem ověření funkčnosti výše zmíněných struktur, byly tyto struktury použity v několika aplikacích. Výkon navržených aktivních prvků a příkladech aplikací je ověřován prostřednictvím simulačních programů PSpice či Cadence za použití technologie 0.18 m CMOS.This doctoral thesis deals with designing ultra-low-voltage (LV) low-power (LP) analog circuits utilizing the unconventional CMOS techniques. Battery powered medical devices such as; long term physiological monitoring, portable, implantable, and wearable systems need to be small and lightweight. Besides, long life battery is essential need for these devices. Thus, low-power integrated circuits are always paramount in such biomedical applications. Recently, unconventional CMOS techniques i.e. Bulk-Driven (BD), Floating-Gate (FG), Quasi-Floating-Gate (QFG), Bulk-Driven Floating-Gate (BD-FG) and Bulk-Driven Quasi-Floating-Gate (BD-QFG) MOS transistors (MOSTs) have revealed as effective devices to reduce the circuit complexity and push the voltage supply of the circuit towards threshold voltage of the MOST. In this work, the most important features of the unconventional CMOS techniques are discussed in details. These techniques have been utilized to perform ultra-LV LP CMOS structures of several active elements i.e. Operational Transconductance Amplifier (OTA) based on BD, FG, QFG, and BD-QFG techniques; Tunable Transconductor based on BD MOST; Current Conveyor Transconductance Amplifier (CCTA) based on BD-QFG MOST; Z Copy-Current Controlled-Current Differencing Buffered Amplifier (ZC-CC-CDBA) based on BD MOST; Winner Take All (WTA) and Loser Take All (LTA) based on BD MOST; Fully Balanced Four-Terminal Floating Nullor (FBFTFN) based on BD-QFG technique. Moreover, to verify the workability of the proposed structures, they were employed in several applications. The performance of the proposed active elements and their applications were investigated through PSpice or Cadence simulation program using 0.18 m CMOS technology.

    Interface Circuits for Microsensor Integrated Systems

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    ca. 200 words; this text will present the book in all promotional forms (e.g. flyers). Please describe the book in straightforward and consumer-friendly terms. [Recent advances in sensing technologies, especially those for Microsensor Integrated Systems, have led to several new commercial applications. Among these, low voltage and low power circuit architectures have gained growing attention, being suitable for portable long battery life devices. The aim is to improve the performances of actual interface circuits and systems, both in terms of voltage mode and current mode, in order to overcome the potential problems due to technology scaling and different technology integrations. Related problems, especially those concerning parasitics, lead to a severe interface design attention, especially concerning the analog front-end and novel and smart architecture must be explored and tested, both at simulation and prototype level. Moreover, the growing demand for autonomous systems gets even harder the interface design due to the need of energy-aware cost-effective circuit interfaces integrating, where possible, energy harvesting solutions. The objective of this Special Issue is to explore the potential solutions to overcome actual limitations in sensor interface circuits and systems, especially those for low voltage and low power Microsensor Integrated Systems. The present Special Issue aims to present and highlight the advances and the latest novel and emergent results on this topic, showing best practices, implementations and applications. The Guest Editors invite to submit original research contributions dealing with sensor interfacing related to this specific topic. Additionally, application oriented and review papers are encouraged.

    A Survey of Non-conventional Techniques for Low-voltage Low-power Analog Circuit Design

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    Designing integrated circuits able to work under low-voltage (LV) low-power (LP) condition is currently undergoing a very considerable boom. Reducing voltage supply and power consumption of integrated circuits is crucial factor since in general it ensures the device reliability, prevents overheating of the circuits and in particular prolongs the operation period for battery powered devices. Recently, non-conventional techniques i.e. bulk-driven (BD), floating-gate (FG) and quasi-floating-gate (QFG) techniques have been proposed as powerful ways to reduce the design complexity and push the voltage supply towards threshold voltage of the MOS transistors (MOST). Therefore, this paper presents the operation principle, the advantages and disadvantages of each of these techniques, enabling circuit designers to choose the proper design technique based on application requirements. As an example of application three operational transconductance amplifiers (OTA) base on these non-conventional techniques are presented, the voltage supply is only ±0.4 V and the power consumption is 23.5 µW. PSpice simulation results using the 0.18 µm CMOS technology from TSMC are included to verify the design functionality and correspondence with theory
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