High Speed Camera Chip

abstract: The market for high speed camera chips, or image sensors, has experienced rapid growth over the past decades owing to its broad application space in security, biomedical equipment, and mobile devices. CMOS (complementary metal-oxide-semiconductor) technology has significantly improved the performance of the high speed camera chip by enabling the monolithic integration of pixel circuits and on-chip analog-to-digital conversion. However, for low light intensity applications, many CMOS image sensors have a sub-optimum dynamic range, particularly in high speed operation. Thus the requirements for a sensor to have a high frame rate and high fill factor is attracting more attention. Another drawback for the high speed camera chip is its high power demands due to its high operating frequency. Therefore, a CMOS image sensor with high frame rate, high fill factor, high voltage range and low power is difficult to realize. This thesis presents the design of pixel circuit, the pixel array and column readout chain for a high speed camera chip. An integrated PN (positive-negative) junction photodiode and an accompanying ten transistor pixel circuit are implemented using a 0.18 µm CMOS technology. Multiple methods are applied to minimize the subthreshold currents, which is critical for low light detection. A layout sharing technique is used to increase the fill factor to 64.63%. Four programmable gain amplifiers (PGAs) and 10-bit pipeline analog-to-digital converters (ADCs) are added to complete on-chip analog to digital conversion. The simulation results of extracted circuit indicate ENOB (effective number of bits) is greater than 8 bits with FoM (figures of merit) =0.789. The minimum detectable voltage level is determined to be 470μV based on noise analysis. The total power consumption of PGA and ADC is 8.2mW for each conversion. The whole camera chip reaches 10508 frames per second (fps) at full resolution with 3.1mm x 3.4mm area.Dissertation/ThesisMasters Thesis Electrical Engineering 201

Wide-Dynamic Range Image Sensor Prototype Based On Digital Readout Integrated Circuit

Emerging infrared and visible imaging applications require higher sensitivity, larger pixel array, larger contrast ratio (dynamic range), very low power consumption and faster data readout rate operations all at the same time. Some of these applications are camera surveillance used both in day/night (very bright and dark conditions), medical diagnostics, weather forecasting, and aerial search & rescue operations etc. The digital-pixel focal plane array (DFPA) implemented in this thesis has the capabilities to capture a wide dynamic range of more than 120dB in a single global shutter without saturating the pixels at a huge frame rate of more than 500Hz. An adaptive Integration Window technique has been developed which ensures that we are able to measure such a huge dynamic range using a counter of only 10 bits (this helps us lower the power consumption of the design). This proposed image sensor has been designed, fabricated and tested in 65nm CMOS technology. It has 16 x 16-pixel array with 16 x 9 pixels with an inbuilt Silicon APD for optical testing and 16 x 7 dummy pixels for electrical testing. Our design proposes an off-chip digital calibration technique to cut down the burden on the analog circuitry. The sensor design achieved more than 128dB+ of dynamic range with a DNL/INL of 0.65/1.65 respectively with a power consumption of only 0.58 uW/pixel. The digital calibration scheme successfully cuts down the pixel-pixel variation standard deviations by a factor of 4. The proposed image sensor design should be able to address most of the short-comings of conventional FPAs and provides a one-shot solution to the design of high performance CMOS image sensors

Advanced CMOS Integrated Circuit Design and Application

The recent development of various application systems and platforms, such as 5G, B5G, 6G, and IoT, is based on the advancement of CMOS integrated circuit (IC) technology that enables them to implement high-performance chipsets. In addition to development in the traditional fields of analog and digital integrated circuits, the development of CMOS IC design and application in high-power and high-frequency operations, which was previously thought to be possible only with compound semiconductor technology, is a core technology that drives rapid industrial development. This book aims to highlight advances in all aspects of CMOS integrated circuit design and applications without discriminating between different operating frequencies, output powers, and the analog/digital domains. Specific topics in the book include: Next-generation CMOS circuit design and application; CMOS RF/microwave/millimeter-wave/terahertz-wave integrated circuits and systems; CMOS integrated circuits specially used for wireless or wired systems and applications such as converters, sensors, interfaces, frequency synthesizers/generators/rectifiers, and so on; Algorithm and signal-processing methods to improve the performance of CMOS circuits and systems

Low-power CMOS digital-pixel Imagers for high-speed uncooled PbSe IR applications

This PhD dissertation describes the research and development of a new low-cost medium wavelength infrared MWIR monolithic imager technology for high-speed uncooled industrial applications. It takes the baton on the latest technological advances in the field of vapour phase deposition (VPD) PbSe-based medium wavelength IR (MWIR) detection accomplished by the industrial partner NIT S.L., adding fundamental knowledge on the investigation of novel VLSI analog and mixed-signal design techniques at circuit and system levels for the development of the readout integrated device attached to the detector. The work supports on the hypothesis that, by the use of the preceding design techniques, current standard inexpensive CMOS technologies fulfill all operational requirements of the VPD PbSe detector in terms of connectivity, reliability, functionality and scalability to integrate the device. The resulting monolithic PbSe-CMOS camera must consume very low power, operate at kHz frequencies, exhibit good uniformity and fit the CMOS read-out active pixels in the compact pitch of the focal plane, all while addressing the particular characteristics of the MWIR detector: high dark-to-signal ratios, large input parasitic capacitance values and remarkable mismatching in PbSe integration. In order to achieve these demands, this thesis proposes null inter-pixel crosstalk vision sensor architectures based on a digital-only focal plane array (FPA) of configurable pixel sensors. Each digital pixel sensor (DPS) cell is equipped with fast communication modules, self-biasing, offset cancellation, analog-to-digital converter (ADC) and fixed pattern noise (FPN) correction. In-pixel power consumption is minimized by the use of comprehensive MOSFET subthreshold operation. The main aim is to potentiate the integration of PbSe-based infra-red (IR)-image sensing technologies so as to widen its use, not only in distinct scenarios, but also at different stages of PbSe-CMOS integration maturity. For this purpose, we posit to investigate a comprehensive set of functional blocks distributed in two parallel approaches: • Frame-based “Smart” MWIR imaging based on new DPS circuit topologies with gain and offset FPN correction capabilities. This research line exploits the detector pitch to offer fully-digital programmability at pixel level and complete functionality with input parasitic capacitance compensation and internal frame memory. • Frame-free “Compact”-pitch MWIR vision based on a novel DPS lossless analog integrator and configurable temporal difference, combined with asynchronous communication protocols inside the focal plane. This strategy is conceived to allow extensive pitch compaction and readout speed increase by the suppression of in-pixel digital filtering, and the use of dynamic bandwidth allocation in each pixel of the FPA. In order make the electrical validation of first prototypes independent of the expensive PbSe deposition processes at wafer level, investigation is extended as well to the development of affordable sensor emulation strategies and integrated test platforms specifically oriented to image read-out integrated circuits. DPS cells, imagers and test chips have been fabricated and characterized in standard 0.15μm 1P6M, 0.35μm 2P4M and 2.5μm 2P1M CMOS technologies, all as part of research projects with industrial partnership. The research has led to the first high-speed uncooled frame-based IR quantum imager monolithically fabricated in a standard VLSI CMOS technology, and has given rise to the Tachyon series [1], a new line of commercial IR cameras used in real-time industrial, environmental and transportation control systems. The frame-free architectures investigated in this work represent a firm step forward to push further pixel pitch and system bandwidth up to the limits imposed by the evolving PbSe detector in future generations of the device.La present tesi doctoral descriu la recerca i el desenvolupament d'una nova tecnologia monolítica d'imatgeria infraroja de longitud d'ona mitja (MWIR), no refrigerada i de baix cost, per a usos industrials d'alta velocitat. El treball pren el relleu dels últims avenços assolits pel soci industrial NIT S.L. en el camp dels detectors MWIR de PbSe depositats en fase vapor (VPD), afegint-hi coneixement fonamental en la investigació de noves tècniques de disseny de circuits VLSI analògics i mixtes pel desenvolupament del dispositiu integrat de lectura unit al detector pixelat. Es parteix de la hipòtesi que, mitjançant l'ús de les esmentades tècniques de disseny, les tecnologies CMOS estàndard satisfan tots els requeriments operacionals del detector VPD PbSe respecte a connectivitat, fiabilitat, funcionalitat i escalabilitat per integrar de forma econòmica el dispositiu. La càmera PbSe-CMOS resultant ha de consumir molt baixa potència, operar a freqüències de kHz, exhibir bona uniformitat, i encabir els píxels actius CMOS de lectura en el pitch compacte del pla focal de la imatge, tot atenent a les particulars característiques del detector: altes relacions de corrent d'obscuritat a senyal, elevats valors de capacitat paràsita a l'entrada i dispersions importants en el procés de fabricació. Amb la finalitat de complir amb els requisits previs, es proposen arquitectures de sensors de visió de molt baix acoblament interpíxel basades en l'ús d'una matriu de pla focal (FPA) de píxels actius exclusivament digitals. Cada píxel sensor digital (DPS) està equipat amb mòduls de comunicació d'alta velocitat, autopolarització, cancel·lació de l'offset, conversió analògica-digital (ADC) i correcció del soroll de patró fixe (FPN). El consum en cada cel·la es minimitza fent un ús exhaustiu del MOSFET operant en subllindar. L'objectiu últim és potenciar la integració de les tecnologies de sensat d'imatge infraroja (IR) basades en PbSe per expandir-ne el seu ús, no només a diferents escenaris, sinó també en diferents estadis de maduresa de la integració PbSe-CMOS. En aquest sentit, es proposa investigar un conjunt complet de blocs funcionals distribuïts en dos enfocs paral·lels: - Dispositius d'imatgeria MWIR "Smart" basats en frames utilitzant noves topologies de circuit DPS amb correcció de l'FPN en guany i offset. Aquesta línia de recerca exprimeix el pitch del detector per oferir una programabilitat completament digital a nivell de píxel i plena funcionalitat amb compensació de la capacitat paràsita d'entrada i memòria interna de fotograma. - Dispositius de visió MWIR "Compact"-pitch "frame-free" en base a un novedós esquema d'integració analògica en el DPS i diferenciació temporal configurable, combinats amb protocols de comunicació asíncrons dins del pla focal. Aquesta estratègia es concep per permetre una alta compactació del pitch i un increment de la velocitat de lectura, mitjançant la supressió del filtrat digital intern i l'assignació dinàmica de l'ample de banda a cada píxel de l'FPA. Per tal d'independitzar la validació elèctrica dels primers prototips respecte a costosos processos de deposició del PbSe sensor a nivell d'oblia, la recerca s'amplia també al desenvolupament de noves estratègies d'emulació del detector d'IR i plataformes de test integrades especialment orientades a circuits integrats de lectura d'imatge. Cel·les DPS, dispositius d'imatge i xips de test s'han fabricat i caracteritzat, respectivament, en tecnologies CMOS estàndard 0.15 micres 1P6M, 0.35 micres 2P4M i 2.5 micres 2P1M, tots dins el marc de projectes de recerca amb socis industrials. Aquest treball ha conduït a la fabricació del primer dispositiu quàntic d'imatgeria IR d'alta velocitat, no refrigerat, basat en frames, i monolíticament fabricat en tecnologia VLSI CMOS estàndard, i ha donat lloc a Tachyon, una nova línia de càmeres IR comercials emprades en sistemes de control industrial, mediambiental i de transport en temps real.Postprint (published version

Low Power Analog to Digital Converters in Advanced CMOS Technology Nodes

The dissertation presents system and circuit solutions to improve the power efficiency and address high-speed design issues of ADCs in advanced CMOS technologies. For image sensor applications, a high-performance digitizer prototype based on column-parallel single-slope ADC (SS-ADC) topology for readout of a back-illuminated 3D-stacked CMOS image sensor is presented. To address the high power consumption issue in high-speed digital counters, a passing window (PW) based hybrid counter topology is proposed. To address the high column FPN under bright illumination conditions, a double auto-zeroing (AZ) scheme is proposed. The proposed techniques are experimentally verified in a prototype chip designed and fabricated in the TSMC 40 nm low-power CMOS process. The PW technique saves 52.8% of power consumption in the hybrid digital counters. Dark/bright column fixed pattern noise (FPN) of 0.0024%/0.028% is achieved employing the proposed double AZ technique for digital correlated double sampling (CDS). A single-column digitizer consumes total power of 66.8μW and occupies an area of 5.4 µm x 610 µm. For mobile/wireless receiver applications, this dissertation presents a low-power wide-bandwidth multistage noise-shaping (MASH) continuous-time delta-sigma modulator (CT-ΔΣM) employing finite impulse response (FIR) digital-to-analog converters (DACs) and encoder-embedded loop-unrolling (EELU) quantizers. The proposed MASH 1-1-1 topology is a cascade of three single-loop first-order CT-ΔΣM stages, each of which consists of an active-RC integrator, a current-steering DAC, and an EELU quantizer. An FIR filter in the main 1.5-bit DAC improves the modulator’s jitter sensitivity performance. FIR’s effect on the noise transfer function (NTF) of the modulator is compensated in the digital domain thanks to the MASH topology. Instead of employing a conventional analog direct feedback path, a 1.5-bit EELU quantizer based on multiplexing comparator outputs is proposed; this approach is suitable for highspeed operation together with power and area benefits. Fabricated in a 40-nm low-power CMOS technology, the modulator’s prototype achieves a 67.3 dB of signal-to-noise and distortion ratio (SNDR), 68 dB of signal-to-noise ratio (SNR), and 68.2 dB of dynamic range (DR) within 50.5 MHz of bandwidth (BW), while consuming 19 mW of total power (P). The proposed modulator features 161.5 dB of figure-of-merit (FOM), defined as FOM = SNDR + 10 log10 (BW/P)

Electronics for Sensors

The aim of this Special Issue is to explore new advanced solutions in electronic systems and interfaces to be employed in sensors, describing best practices, implementations, and applications. The selected papers in particular concern photomultiplier tubes (PMTs) and silicon photomultipliers (SiPMs) interfaces and applications, techniques for monitoring radiation levels, electronics for biomedical applications, design and applications of time-to-digital converters, interfaces for image sensors, and general-purpose theory and topologies for electronic interfaces

Low-Noise Energy-Efficient Sensor Interface Circuits

Today, the Internet of Things (IoT) refers to a concept of connecting any devices on network where environmental data around us is collected by sensors and shared across platforms. The IoT devices often have small form factors and limited battery capacity; they call for low-power, low-noise sensor interface circuits to achieve high resolution and long battery life. This dissertation focuses on CMOS sensor interface circuit techniques for a MEMS capacitive pressure sensor, thermopile array, and capacitive microphone. Ambient pressure is measured in the form of capacitance. This work propose two capacitance-to-digital converters (CDC): a dual-slope CDC employs an energy efficient charge subtraction and dual comparator scheme; an incremental zoom-in CDC largely reduces oversampling ratio by using 9b zoom-in SAR, significantly improving conversion energy. An infrared gesture recognition system-on-chip is then proposed. A hand emits infrared radiation, and it forms an image on a thermopile array. The signal is amplified by a low-noise instrumentation chopper amplifier, filtered by a low-power 30Hz LPF to remove out-band noise including the chopper frequency and its harmonics, and digitized by an ADC. Finally, a motion history image based DSP analyzes the waveform to detect specific hand gestures. Lastly, a microphone preamplifier represents one key challenge in enabling voice interfaces, which are expected to play a dominant role in future IoT devices. A newly proposed switched-bias preamplifier uses switched-MOSFET to reduce 1/f noise inherently.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/137061/1/chaseoh_1.pd

Low-power ADC designs in scaled CMOS process

This thesis presents advanced design techniques for successive approximation register (SAR) analog-to-digital converters (ADCs), continuous-time ∆Σ ADCs, and single-slope (SS) ADCs in nano-scale CMOS technologies. (1) In high-speed SAR ADCs, metastability of the comparator limits the performance, which even results in the sparkle code errors. Proposed background calibration utilizing the comparator decision time detector removes the metastability-induced sparkle code errors by controlling the metastability detection window. At the same time, 1-bit resolution increase is gained from the proposed technique, which results in the fewer comparison cycles. Along with the relaxed requirement on the comparator, this cycle reduction helps to achieve the good power efficiency in high-speed SAR design. A prototype ADC in 40nm CMOS achieves 35.3dB SNDR and consumes 0.81mW while sampling at 700MS/s. (2) In the proposed continuous-time ∆Σ ADCs, conventional power-hungry opamp is replaced by voltage controlled oscillators (VCOs) that perform the data conversion in the phase domain instead of the voltage domain. In contrary to the opamp which is difficult to achieve good performance in the advanced CMOS process, VCOs have many advantages in the phase domain. To solve the nonlinear gain of VCOs, dual VCO-based integrator is used to suppress the dominant second-order distortion. To address the distortion from the DAC, a novel DAC calibration technique that both digitally senses and removes DAC mismatch errors is proposed. It has low hardware complexity by taking advantage of the intrinsic clocked level averaging (CLA) capability of dual-VCO-based integrator. It ensures high linearity regardless of the VCO center frequency. By lowering the VCO center frequency, power consumption is reduced. A prototype ADC designed in 130nm occupies an area of only 0.04mm² . It achieves 71dB SNDR over 1.7MHz bandwidth (BW) while sampling at 250MS/s and consuming only 0.9mW from a 1.2V power supply. The corresponding figure-of-merit (FOM) is 98 fJ/conversion-step. (3) A SS ADC has advantages of high linearity and a simple architecture. Thus, it is well suited for the column-parallel architecture for the CMOS image sensors. However, conversion speed is severely limited in high-bit resolution since more than 2 [superscript N] cycles are required for a N-bit resolution. To tackle this limitation, a two-step approach becomes popular. In this thesis, a two-step SAR/SS architecture is presented. In addition to reducing the conversion time, analog correlated double sampling (CDS) can cancel kT/C noise, which enables capacitor area reduction. A prototype ADC in 180nm CMOS occupies only 9.3µm x 830µm. It achieves 60.5dB SNR after CDS while sampling at 256kHz and consuming 91µWElectrical and Computer Engineerin

Digital CMOS ISFET architectures and algorithmic methods for point-of-care diagnostics

Over the past decade, the surge of infectious diseases outbreaks across the globe is redefining how healthcare is provided and delivered to patients, with a clear trend towards distributed diagnosis at the Point-of-Care (PoC). In this context, Ion-Sensitive Field Effect Transistors (ISFETs) fabricated on standard CMOS technology have emerged as a promising solution to achieve a precise, deliverable and inexpensive platform that could be deployed worldwide to provide a rapid diagnosis of infectious diseases. This thesis presents advancements for the future of ISFET-based PoC diagnostic platforms, proposing and implementing a set of hardware and software methodologies to overcome its main challenges and enhance its sensing capabilities. The first part of this thesis focuses on novel hardware architectures that enable direct integration with computational capabilities while providing pixel programmability and adaptability required to overcome pressing challenges on ISFET-based PoC platforms. This section explores oscillator-based ISFET architectures, a set of sensing front-ends that encodes the chemical information on the duty cycle of a PWM signal. Two initial architectures are proposed and fabricated in AMS 0.35um, confirming multiple degrees of programmability and potential for multi-sensing. One of these architectures is optimised to create a dual-sensing pixel capable of sensing both temperature and chemical information on the same spatial point while modulating this information simultaneously on a single waveform. This dual-sensing capability, verified in silico using TSMC 0.18um process, is vital for DNA-based diagnosis where protocols such as LAMP or PCR require precise thermal control. The COVID-19 pandemic highlighted the need for a deliverable diagnosis that perform nucleic acid amplification tests at the PoC, requiring minimal footprint by integrating sensing and computational capabilities. In response to this challenge, a paradigm shift is proposed, advocating for integrating all elements of the portable diagnostic platform under a single piece of silicon, realising a ``Diagnosis-on-a-Chip". This approach is enabled by a novel Digital ISFET Pixel that integrates both ADC and memory with sensing elements on each pixel, enhancing its parallelism. Furthermore, this architecture removes the need for external instrumentation or memories and facilitates its integration with computational capabilities on-chip, such as the proposed ARM Cortex M3 system. These computational capabilities need to be complemented with software methods that enable sensing enhancement and new applications using ISFET arrays. The second part of this thesis is devoted to these methods. Leveraging the programmability capabilities available on oscillator-based architectures, various digital signal processing algorithms are implemented to overcome the most urgent ISFET non-idealities, such as trapped charge, drift and chemical noise. These methods enable fast trapped charge cancellation and enhanced dynamic range through real-time drift compensation, achieving over 36 hours of continuous monitoring without pixel saturation. Furthermore, the recent development of data-driven models and software methods open a wide range of opportunities for ISFET sensing and beyond. In the last section of this thesis, two examples of these opportunities are explored: the optimisation of image compression algorithms on chemical images generated by an ultra-high frame-rate ISFET array; and a proposed paradigm shift on surface Electromyography (sEMG) signals, moving from data-harvesting to information-focused sensing. These examples represent an initial step forward on a journey towards a new generation of miniaturised, precise and efficient sensors for PoC diagnostics.Open Acces