High-Density Solid-State Memory Devices and Technologies

This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms

Design for Test and Hardware Security Utilizing Tester Authentication Techniques

Design-for-Test (DFT) techniques have been developed to improve testability of integrated circuits. Among the known DFT techniques, scan-based testing is considered an efficient solution for digital circuits. However, scan architecture can be exploited to launch a side channel attack. Scan chains can be used to access a cryptographic core inside a system-on-chip to extract critical information such as a private encryption key. For a scan enabled chip, if an attacker is given unlimited access to apply all sorts of inputs to the Circuit-Under-Test (CUT) and observe the outputs, the probability of gaining access to critical information increases. In this thesis, solutions are presented to improve hardware security and protect them against attacks using scan architecture. A solution based on tester authentication is presented in which, the CUT requests the tester to provide a secret code for authentication. The tester authentication circuit limits the access to the scan architecture to known testers. Moreover, in the proposed solution the number of attempts to apply test vectors and observe the results through the scan architecture is limited to make brute-force attacks practically impossible. A tester authentication utilizing a Phase Locked Loop (PLL) to encrypt the operating frequency of both DUT/Tester has also been presented. In this method, the access to the critical security circuits such as crypto-cores are not granted in the test mode. Instead, a built-in self-test method is used in the test mode to protect the circuit against scan-based attacks. Security for new generation of three-dimensional (3D) integrated circuits has been investigated through 3D simulations COMSOL Multiphysics environment. It is shown that the process of wafer thinning for 3D stacked IC integration reduces the leakage current which increases the chip security against side-channel attacks

A review of advances in pixel detectors for experiments with high rate and radiation

The Large Hadron Collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog. Phy

Study of the impact of lithography techniques and the current fabrication processes on the design rules of tridimensional fabrication technologies

Working for the photolithography tool manufacturer leader sometimes gives me the impression of how complex and specific is the sector I am working on. This master thesis topic came with the goal of getting the overall picture of the state-of-the-art: stepping out and trying to get a helicopter view usually helps to understand where a process is in the productive chain, or what other firms and markets are doing to continue improvingUniversidad de sevilla.Máster Universitario en Microelectrónica: Diseño y Aplicaciones de Sistemas Micro/Nanométrico

異種ダイレット積層を用いたフレキシブルハイブリッドデバイスの集積技術に関する研究

Tohoku University福島誉史課

Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications

Im Rahmen der vorliegenden Dissertation zum Thema „Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications“ wurde auf Basis einer 130 nm SiGe BiCMOS Technologie ein Through-Silicon Via (TSV) Technologiemodul zur Herstellung elektrischer Durchkontaktierungen für die Anwendung im Millimeterwellen und Sub-THz Frequenzbereich entwickelt. TSVs wurden mittels elektromagnetischer Simulationen modelliert und in Bezug auf ihre elektrischen Eigenschaften bis in den sub-THz Bereich bis zu 300 GHz optimiert. Es wurden die Wechselwirkungen zwischen Modellierung, Fertigungstechnologie und den elektrischen Eigenschaften untersucht. Besonderes Augenmerk wurde auf die technologischen Einflussfaktoren gelegt. Daraus schlussfolgernd wurde das TSV Technologiemodul entwickelt und in eine SiGe BiCMOS Technologie integriert. Hierzu wurde eine Via-Middle Integration gewählt, welche eine Freilegung der TSVs von der Wafer Rückseite erfordert. Durch die geringe Waferdicke von ca. 75 μm wird einen Carrier Wafer Handling Prozess verwendet. Dieser Prozess wurde unter der Randbedingung entwickelt, dass eine nachfolgende Bearbeitung der Wafer innerhalb der BiCMOS Pilotlinie erfolgen kann. Die Rückseitenbearbeitung zielt darauf ab, einen Redistribution Layer auf der Rückseite der BiCMOS Wafer zu realisieren. Hierzu wurde ein Prozess entwickelt, um gleichzeitig verschiedene TSV Strukturen mit variablen Geometrien zu realisieren und damit eine hohe TSV Design Flexibilität zu gewährleisten. Die TSV Strukturen wurden von DC bis über 300 GHz charakterisiert und die elektrischen Eigenschaften extrahiert. Dabei wurde gezeigt, dass TSV Verbindungen mit sehr geringer Dämpfung <1 dB bis 300 GHz realisierbar sind und somit ausgezeichnete Hochfrequenzeigenschaften aufweisen. Zuletzt wurden vielfältige Anwendungen wie das Grounding von Hochfrequenzschaltkreisen, Interposer mit Waveguides und 300 GHz Antennen dargestellt. Das Potential für Millimeterwellen Packaging und 3D Integration wurde evaluiert. TSV Technologien sind heutzutage in vielen Anwendungen z.B. im Bereich der Systemintegration von Digitalschaltkreisen und der Spannungsversorgung von integrierten Schaltkreisen etabliert. Im Rahmen dieser Arbeit wurde der Einsatz von TSVs für Millimeterwellen und dem sub-THz Frequenzbereich untersucht und die Anwendung für den sub-THz Bereich bis 300 GHz demonstriert. Dadurch werden neue Möglichkeiten der Systemintegration und des Packaging von Höchstfrequenzsystemen geschaffen.:Bibliographische Beschreibung List of symbols and abbreviations Acknowledgement 1. Introduction 2. FEM Modeling of BiCMOS & Interposer Through-Silicon Vias 3. Fabrication of BiCMOS & Silicon Interposer with TSVs 4. Characterization of BiCMOS Embedded Through-Silicon Vias 5. Applications 6. Conclusion and Future Work 7. Appendix 8. Publications & Patents 9. Bibliography 10. List of Figures and Table

Monatomic phase change memory

Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends crucially on how the materials at the core of this technology adapt to the requirements arising from continued scaling towards higher device densities. A common strategy to finetune the properties of phase change memory materials, reaching reasonable thermal stability in optical data storage, relies on mixing precise amounts of different dopants, resulting often in quaternary or even more complicated compounds. Here we show how the simplest material imaginable, a single element (in this case, antimony), can become a valid alternative when confined in extremely small volumes. This compositional simplification eliminates problems related to unwanted deviations from the optimized stoichiometry in the switching volume, which become increasingly pressing when devices are aggressively miniaturized. Removing compositional optimization issues may allow one to capitalize on nanosize effects in information storage

Commercialization of low temperature copper thermocompression bonding for 3D integrated circuits

Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2008.Includes bibliographical references (p. 84-87).Wafer bonding is a key process and enabling technology for realization of three-dimensional integrated circuits (3DIC) with reduced interconnect delay and correspondingly increased circuit speed and decreased power dissipation, along with an improved form factor and portability. One of the most recent novel and promising wafer bonding approaches to realizing 3DIC is Low Temperature Thermocompression (LTTC) bonding using copper (Cu) as the bonding interface material. This thesis investigates the LTTC bonding approach in terms of its technological implications in contrast to other conventional bonding approaches. The various technological aspects pertaining to LTTC are comprehensively explored and analyzed. In addition to this, the commercialization potential for this technology is also studied and the economic viability of this process in production is critically evaluated using suitable cost models. Based on the technological and economic outlook, the potential for commercialization of LTTC is gauged.by Raghavan Nagarajan.M.Eng