54 research outputs found

    Mixed Linearity Improvement Techniques for Ultra-wideband Low Noise Amplifier

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    We present the linearization of an ultra-wideband low noise amplifier (UWB-LNA) operating from 2GHz to 11GHz through combining two linearization methods. The used linearization techniques are the combination of post-distortion cancellation and derivative-superposition linearization methods. The linearized UWB-LNA shows an improved linearity (IIP3) of +12dBm, a minimum noise figure (NFmin.) of 3.6dB, input and output insertion losses (S11 and S22)  below -9dB over the entire working bandwidth, midband gain of 6dB at 5.8GHz, and overall circuit power consumption of 24mW supplied from a 1.5V voltage source. Both UWB-LNA and linearized UWB-LNA designs are verified and simulated with ADS2016.01 software using BSIM3v3 TSMC 180nm CMOS model files. In addition, the linearized UWB-LNA performance is compared with other recent state-of-the-art LNAs

    A 0.18µm CMOS UWB wireless transceiver for medical sensing applications

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    Recently, there is a new trend of demand of a biomedical device that can continuously monitor patient’s vital life index such as heart rate variability (HRV) and respiration rate. This desired device would be compact, wearable, wireless, networkable and low-power to enable proactive home monitoring of vital signs. This device should have a radar sensor portion and a wireless communication link all integrated in one small set. The promising technology that can satisfy these requirements is the impulse radio based Ultra-wideband (IR-UWB) technology. Since Federal Communications Commission (FCC) released the 3.1GHz-10.6GHz frequency band for UWB applications in 2002 [1], IR-UWB has received significant attention for applications in target positioning and wireless communications. IR-UWB employs extremely narrow Gaussian monocycle pulses or any other forms of short RF pulses to represent information. In this project, an integrated wireless UWB transceiver for the 3.1GHz-10.6GHz IR-UWB medical sensor was developed in the 0.18µm CMOS technology. This UWB transceiver can be employed for both radar sensing and communication purposes. The transceiver applies the On-Off Keying (OOK) modulation scheme to transmit short Gaussian pulse signals. The transmitter output power level is adjustable. The fully integrated UWB transceiver occupies a core area of 0.752mm^2 and the total die area of 1.274mm^2 with the pad ring inserted. The transceiver was simulated with overall power consumption of 40mW for radar sensing. The receiver is very sensitive to weak signals with a sensitivity of -73.01dBm. The average power of a single pulse is 9.8µW. The pulses are not posing any harm to human tissues. The sensing resolution and the target positioning precision are presumably sufficient for heart movement detection purpose in medical applications. This transceiver can also be used for high speed wireless data communications. The data transmission rate of 200 Mbps was achieved with an overall power consumption of 57mW. A combination of sensing and communications can be used to build a low power sensor

    Analysis and Design of Wideband Low Noise Amplifier with Digital Control

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    The design issues in designing low noise amplifier (LNA) for Software-Defined-Radio (SDR) are reviewed. An inductor-less wideband low noise amplifier aiming at low frequency band (0.2-2GHz) for Software-Defined-Radio is presented. Shunt-shunt LNA with active feedback is used as the first stage which is carefully optimized for low noise and wide band applications. A digitally controlled second stage is employed to provide an additional 12dB gain control. A novel method is proposed to bypass the first stage without degrading input matching. This LNA is fabricated in a standard 0.18 um CMOS technology. The measurement result shows the proposed LNA has a gain range of 6dB-18dB at high gain mode and -12dB-0dB at low gain mode, as well as a –3dB bandwidth of 2GHz. The noise figure (NF) is 3.5-4.5dB in the high gain setting mode. It consumes 20mW from a 1.8V supply

    A Review of CMOS Low Noise Amplifier for UWB System

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    A number of CMOS low noise amplifier (LNA) design for ultra-wideband (UWB) application had been produced with a various topology and techniques from year 2004 to 2016. The performance of LNA such as frequency bandwidth, noise figure, input and output matching and gain depend with the choice of the topology and technique used. Among the techniques introduced are current reuse, common source, resistive feedback, common gate, Chebyshev filter, distributed amplifier, folded cascade and negative feedback. This paper presents the collection of review about design of low noise amplifier used for UWB application in term of topology circuit. Thus, the problem and limitation of the CMOS LNA for UWB application are reviewed. Furthermore, recent developments of CMOS LNAs are examined and a comparison of the performance criteria of various topologies is presented

    Direct Conversion RF Front-End Implementation for Ultra-Wideband (UWB) and GSM/WCDMA Dual-Band Applications in Silicon-Based Technologies

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    This dissertation focuses on wideband circuit design and implementation issues up to 10GHz based on the direct conversion architecture in the CMOS and SiGe BiCMOS technologies. The dissertation consists of two parts: One, implementation of a RF front-end receiver for an ultra-wideband system and, two, implementation of a local oscillation (LO) signal for a GSM/WCDMA multiband application. For emerging ultra-wideband (UWB) applications, the key active components in the RF front-end receiver were designed and implemented in 0.18um SiGe BiCMOS process. The design of LNA, which is the critical circuit block for both systems, was analyzed in terms of noise, linearity and group delay variation over an extemely wide bandwidth. Measurements are demonstrated for an energy-thrifty UWB receiver based on an MB-OFDM system covering the full FCC-allowed UWB frequency range. For multiband applications such as a GSM/WCDMA dual-band application, the design of wideband VCO and various frequency generation blocks are investigated as alternatives for implementation of direct conversion architecture. In order to reduce DC-offset and LO pulling phenomena that degrade performance in a typical direct conversion scheme, an innovative fractional LO signal generator was implemented in a standard CMOS process. A simple analysis is provided for the loop dynamics and operating range of the design as well as for the measured results of the factional LO signal generator.Ph.D.Committee Chair: Dr. Laskar, Joy; Committee Member: Dr. Cressler, John; Committee Member: Dr. Kohl, Paul; Committee Member: Dr. Papapolymerou, John; Committee Member: Dr. Scott, Waymon

    Implementation Aspects of a Transmitted-Reference UWB Receiver

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    In this paper, we discuss the design issues of an ultra wide band (UWB) receiver targeting a single-chip CMOS implementation for low data-rate applications like ad hoc wireless sensor networks. A non-coherent transmitted reference (TR) receiver is chosen because of its small complexity compared to other architectures. After a brief recapitulation of the UWB fundamentals and a short discussion on the major differences between coherent and non-coherent receivers, we discuss issues, challenges and possible design solutions. Several simulation results obtained by means of a behavioral model are presented, together with an analysis of the trade-off between performance and complexity in an integrated circuit implementation

    CMOS Integrated Circuit Design for Ultra-Wideband Transmitters and Receivers

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    Ultra-wideband technology (UWB) has received tremendous attention since the FCC license release in 2002, which expedited the research and development of UWB technologies on consumer products. The applications of UWB range from ground penetrating radar, distance sensor, through wall radar to high speed, short distance communications. The CMOS integrated circuit is an attractive, low cost approach for implementing UWB technology. The improving cut-off frequency of the transistor in CMOS process makes the CMOS circuit capable of handling signal at multi-giga herz. However, some design challenges still remain to be solved. Unlike regular narrow band signal, the UWB signal is discrete pulse instead of continuous wave (CW), which results in the occupancy of wide frequency range. This demands that UWB front-end circuits deliver both time domain and frequency domain signal processing over broad bandwidth. Witnessing these technique challenges, this dissertation aims at designing novel, high performance components for UWB signal generation, down-conversion, as well as accurate timing control using low cost CMOS technology. We proposed, designed and fabricated a carrier based UWB transmitter to facilitate the discrete feature of the UWB signal. The transmitter employs novel twostage -switching to generate carrier based UWB signal. The structure not only minimizes the current consumption but also eliminates the use of a UWB power amplifier. The fabricated transmitter is capable of delivering tunable UWB signal over the complete 3.1GHz -10.6GHz UWB band. By applying the similar two-stage switching approach, we were able to implement a novel switched-LNA based UWB sampling receiver frontend. The proposed front-end has significantly lower power consumption compared to previously published design while keep relatively high gain and low noise at the same time. The designed sampling mixer shows unprecedented performance of 9-12dB voltage conversion gain, 16-25dB noise figure, and power consumption of only 21.6mW(with buffer) and 11.7mW(without buffer) across dc to 3.5GHz with 100M-Hz sampling frequency. The implementation of a precise delay generator is also presented in the dissertation. It relies on an external reference clock to provide accurate timing against process, supply voltage and temperature variation through a negative feedback loop. The delay generator prototype has been verified having digital programmability and tunable delay step resolution. The relative delay shift from desired value is limited to within 0.2%

    System-level design and RF front-end implementation for a 3-10ghz multiband-ofdm ultrawideband receiver and built-in testing techniques for analog and rf integrated circuits

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    This work consists of two main parts: a) Design of a 3-10GHz UltraWideBand (UWB) Receiver and b) Built-In Testing Techniques (BIT) for Analog and RF circuits. The MultiBand OFDM (MB-OFDM) proposal for UWB communications has received significant attention for the implementation of very high data rate (up to 480Mb/s) wireless devices. A wideband LNA with a tunable notch filter, a downconversion quadrature mixer, and the overall radio system-level design are proposed for an 11-band 3.4-10.3GHz direct conversion receiver for MB-OFDM UWB implemented in a 0.25mm BiCMOS process. The packaged IC includes an RF front-end with interference rejection at 5.25GHz, a frequency synthesizer generating 11 carrier tones in quadrature with fast hopping, and a linear phase baseband section with 42dB of gain programmability. The receiver IC mounted on a FR-4 substrate provides a maximum gain of 67-78dB and NF of 5-10dB across all bands while consuming 114mA from a 2.5V supply. Two BIT techniques for analog and RF circuits are developed. The goal is to reduce the test cost by reducing the use of analog instrumentation. An integrated frequency response characterization system with a digital interface is proposed to test the magnitude and phase responses at different nodes of an analog circuit. A complete prototype in CMOS 0.35mm technology employs only 0.3mm2 of area. Its operation is demonstrated by performing frequency response measurements in a range of 1 to 130MHz on 2 analog filters integrated on the same chip. A very compact CMOS RF RMS Detector and a methodology for its use in the built-in measurement of the gain and 1dB compression point of RF circuits are proposed to address the problem of on-chip testing at RF frequencies. The proposed device generates a DC voltage proportional to the RMS voltage amplitude of an RF signal. A design in CMOS 0.35mm technology presents and input capacitance <15fF and occupies and area of 0.03mm2. The application of these two techniques in combination with a loop-back test architecture significantly enhances the testability of a wireless transceiver system
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