A neural probe with up to 966 electrodes and up to 384 configurable channels in 0.13 μm SOI CMOS

In vivo recording of neural action-potential and local-field-potential signals requires the use of high-resolution penetrating probes. Several international initiatives to better understand the brain are driving technology efforts towards maximizing the number of recording sites while minimizing the neural probe dimensions. We designed and fabricated (0.13-μm SOI Al CMOS) a 384-channel configurable neural probe for large-scale in vivo recording of neural signals. Up to 966 selectable active electrodes were integrated along an implantable shank (70 μm wide, 10 mm long, 20 μm thick), achieving a crosstalk of −64.4 dB. The probe base (5 × 9 mm2) implements dual-band recording and a 1

Four-element phased-array beamformers and a self-interference canceling full-duplex transciver in 130-nm SiGe for 5G applications at 26 GHz

This thesis is on the design of radio-frequency (RF) integrated front-end circuits for next generation 5G communication systems. The demand for higher data rates and lower latency in 5G networks can only be met using several new technologies including, but not limited to, mm-waves, massive-MIMO, and full-duplex. Use of mm-waves provides more bandwidth that is necessary for high data rates at the cost of increased attenuation in air. Massive-MIMO arrays are required to compensate for this increased path loss by providing beam steering and array gain. Furthermore, full duplex operation is desirable for improved spectrum efficiency and reduced latency. The difficulty of full duplex operation is the self-interference (SI) between transmit (TX) and receive (RX) paths. Conventional methods to suppress this interference utilize either bulky circulators, isolators, couplers or two separate antennas. These methods are not suitable for fully-integrated full-duplex massive-MIMO arrays. This thesis presents circuit and system level solutions to the issues summarized above, in the form of SiGe integrated circuits for 5G applications at 26 GHz. First, a full-duplex RF front-end architecture is proposed that is scalable to massive-MIMO arrays. It is based on blind, RF self-interference cancellation that is applicable to single/shared antenna front-ends. A high resolution RF vector modulator is developed, which is the key building block that empowers the full-duplex frontend architecture by achieving better than state-of-the-art 10-b monotonic phase control. This vector modulator is combined with linear-in-dB variable gain amplifiers and attenuators to realize a precision self-interference cancellation circuitry. Further, adaptive control of this SI canceler is made possible by including an on-chip low-power IQ downconverter. It correlates copies of transmitted and received signals and provides baseband/dc outputs that can be used to adaptively control the SI canceler. The solution comes at the cost of minimal additional circuitry, yet significantly eases linearity requirements of critical receiver blocks at RF/IF such as mixers and ADCs. Second, to complement the proposed full-duplex front-end architecture and to provide a more complete solution, high-performance beamformer ICs with 5-/6- b phase and 3-/4-b amplitude control capabilities are designed. Single-channel, separate transmitter and receiver beamformers are implemented targeting massive- MIMO mode of operation, and their four-channel versions are developed for phasedarray communication systems. Better than state-of-the-art noise performance is obtained in the RX beamformer channel, with a full-channel noise figure of 3.3 d

Silicon Photonic Subsystems for Inter-Chip Optical Networks

The continuous growth of electronic compute and memory nodes in terms of the number of I/O pins, bandwidth, and areal throughput poses major integration and packaging challenges associated with offloading multi-Tbit/s data rates within the few pJ/bit targets. While integrated photonics are already deployed in long and short distances such as inter and intra data centers communications, the promising characteristics of the silicon photonic platform set it as the future technology for optical interconnects in ultra short inter-chip distances. The high index contrast between the waveguide and the cladding together with strong thermo-optic and carrier effects in silicon allows developing a wide range of micro-scale and low power optical devices compatible with the CMOS fabrication processes. Furthermore, the availability of photonic foundries and new electrical and optical co-packaging techniques further pushes this platform for the next steps of commercial deployment. The work in this dissertation presents the current trends in high-performance memory and processor nodes and gives motivation for disaggregated and reconfigurable inter-chip network enabled with the silicon photonic layer. A dense WDM transceiver and broadband switch architectures are discussed to support a bi-directional network of ten hybrid-memory cubes (HMC) interconnected to ten processor nodes with an overall aggregated bandwidth of 9.6Tbit/s. Latency and energy consumption are key performance parameters in a processor to primary memory nodes connectivity. The transceiver design is based on energy-efficient micro-ring resonators, and the broadband switch is constructed with 2x2 Mach-Zehnder elements for nano-second reconfiguration. Each transceiver is based on hundreds of micro-rings to convert the native HMC electrical protocol to the optical domain and the switch is based on tens of hundreds of 2x2 elements to achieve non-blocking all-to-all connectivity. The next chapters focus on developing methods for controlling and monitoring such complex and highly integrated silicon photonic subsystems. The thermo-optic effect is characterized and we show experimentally that the phase of the optical carrier can be reliably controlled with pulse-width modulation (PWM) signal, ultimately relaxing the need for hundreds of digital to analog converters (DACs). We further show that doped waveguide heaters can be utilized as \textit{in-line} optical power monitors by measuring photo-conductance current, which is an alternative for the conventional tapping and integration of photo-diodes. The next part concerned with a common cascaded micro-ring resonator in a WDM transceiver design. We develop on an FPGA control algorithm that abstracts the physical layer and takes user-defined inputs to set the resonances to the desired wavelength in a unicast and multicast transmission modes. The associated sensitivities of these silicon ring resonators are presented and addressed with three closed-loop solutions. We first show a closed-loop operation based on tapping the error signal from the drop port of the micro-ring. The second solution presents a resonance wavelength locking with a single digital I/O for control and feedback signals. Lastly, we leverage the photo-conductance effect and demonstrate the locking procedure using only the doped heater for both control and feedback purposes. To achieve the inter-chip reconfigurability we discuss recent advances of high-port-count SiP broadband switches for reconfigurable inter-chip networks. To ensure optimal operation in terms of low insertion loss, low cross-talk and high signal integrity per routing path, hundreds of 2x2 Mach-Zehnder elements need to be biased precisely for the cross and bar states. We address this challenge with a tapless and a design agnostic calibration approach based on the photo-conductance effect. The automated algorithm returns a look-up table for all for each 2x2 element and the associated calibrated biases. Each routing scenario is then tested for insertion loss, crosstalk and bit-error rate of 25Gbit/s 4-level pulse amplitude modulation signals. The last part utilizes the Mach-Zehnder interferometers in WDM transceiver applications. We demonstrate a polarization insensitive four-channel WDM receiver with 40Gbit/s per channel and a transmitter design generating 8-level pulse amplitude modulation signals at 30Gbit/s

Integrated temperature sensors in deep sub-micron CMOS technologies

textIntegrated temperature sensors play an important role in enhancing the performance of on-chip power and thermal management systems in today's highly-integrated system-on-chip (SoC) platforms, such as microprocessors. Accurate on-chip temperature measurement is essential to maximize the performance and reliability of these SoCs. However, due to non-uniform power consumption by different functional blocks, microprocessors have fairly large thermal gradient (and variation) across their chips. In the case of multi-core microprocessors for example, there are task-specific thermal gradients across different cores on the same die. As a result, multiple temperature sensors are needed to measure the temperature profile at all relevant coordinates of the chip. Subsequently, the results of the temperature measurements are used to take corrective measures to enhance the performance, or save the SoC from catastrophic over-heating situations which can cause permanent damage. Furthermore, in a large multi-core microprocessor, it is also imperative to continuously monitor potential hot-spots that are prone to thermal runaway. The locations of such hot spots depend on the operations and instruction the processor carries out at a given time. Due to practical limitations, it is an overkill to place a big size temperature sensor nearest to all possible hot spots. Thus, an ideal on-chip temperature sensor should have minimal area so that it can be placed non-invasively across the chip without drastically changing the chip floor plan. In addition, the power consumption of the sensors should be very low to reduce the power budget overhead of thermal monitoring system, and to minimize measurement inaccuracies due to self-heating. The objective of this research is to design an ultra-small size and ultra-low power temperature sensor such that it can be placed in the intimate proximity of all possible hot spots across the chip. The general idea is to use the leakage current of a reverse-bias p-n junction diode as an operand for temperature sensing. The tasks within this project are to examine the theoretical aspect of such sensors in both Silicon-On-Insulator (SOI), and bulk Complementary Metal-Oxide Semiconductor (CMOS) technologies, implement them in deep sub-micron technologies, and ultimately evaluate their performances, and compare them to existing solutions.Electrical and Computer Engineerin

RF MEMS reference oscillators platform for wireless communications

A complete platform for RF MEMS reference oscillator is built to replace bulky quartz from mobile devices, thus reducing size and cost. The design targets LTE transceivers. A low phase noise 76.8 MHz reference oscillator is designed using material temperature compensated AlN-on-silicon resonator. The thesis proposes a system combining piezoelectric resonator with low loading CMOS cross coupled series resonance oscillator to reach state-of-the-art LTE phase noise specifications. The designed resonator is a two port fundamental width extensional mode resonator. The resonator characterized by high unloaded quality factor in vacuum is designed with low temperature coefficient of frequency (TCF) using as compensation material which enhances the TCF from - 3000 ppm to 105 ppm across temperature ranges of -40˚C to 85˚C. By using a series resonant CMOS oscillator, phase noise of -123 dBc/Hz at 1 kHz, and -162 dBc/Hz at 1MHz offset is achieved. The oscillator’s integrated RMS jitter is 106 fs (10 kHz–20 MHz), consuming 850 μA, with startup time is 250μs, achieving a Figure-of-merit (FOM) of 216 dB. Electronic frequency compensation is presented to further enhance the frequency stability of the oscillator. Initial frequency offset of 8000 ppm and temperature drift errors are combined and further addressed electronically. A simple digital compensation circuitry generates a compensation word as an input to 21 bit MASH 1 -1-1 sigma delta modulator incorporated in RF LTE fractional N-PLL for frequency compensation. Temperature is sensed using low power BJT band-gap front end circuitry with 12 bit temperature to digital converter characterized by a resolution of 0.075˚C. The smart temperature sensor consumes only 4.6 μA. 700 MHz band LTE signal proved to have the stringent phase noise and frequency resolution specifications among all LTE bands. For this band, the achieved jitter value is 1.29 ps and the output frequency stability is 0.5 ppm over temperature ranges from -40˚C to 85˚C. The system is built on 32nm CMOS technology using 1.8V IO device

Silicon photonic modulators for PAM transmissions

High-speed optical interconnects are crucial for both data centers and high performance computing systems. High power consumption and limited device bandwidth have hindered the move to higher optical transmission speeds. Integrated optical transceivers in silicon photonics (SiP) using pulse-amplitude modulation (PAM) are a promising solution to increase data rates. In this paper, we review recent progress in SiP for PAM transmissions. We focus on materials and technologies available CMOS-compatible photonics processes. Performance metrics of SiP modulators and crucial considerations for high-speed PAM transmissions are discussed. Various driving strategies to achieve optical PAM signals are presented. Some of the state-of-the-art SiP PAM modulators and integrated transmitters are reviewed

Integrated Circuits and Systems for Smart Sensory Applications

Connected intelligent sensing reshapes our society by empowering people with increasing new ways of mutual interactions. As integration technologies keep their scaling roadmap, the horizon of sensory applications is rapidly widening, thanks to myriad light-weight low-power or, in same cases even self-powered, smart devices with high-connectivity capabilities. CMOS integrated circuits technology is the best candidate to supply the required smartness and to pioneer these emerging sensory systems. As a result, new challenges are arising around the design of these integrated circuits and systems for sensory applications in terms of low-power edge computing, power management strategies, low-range wireless communications, integration with sensing devices. In this Special Issue recent advances in application-specific integrated circuits (ASIC) and systems for smart sensory applications in the following five emerging topics: (I) dedicated short-range communications transceivers; (II) digital smart sensors, (III) implantable neural interfaces, (IV) Power Management Strategies in wireless sensor nodes and (V) neuromorphic hardware

Fully Synthesizable Low-Area Digital-to-Analog Converter With Graceful Degradation and Dynamic Power-Resolution Scaling

In this paper, a fully synthesizable digital-to-analog converter (DAC) is proposed. Based on a digital standard cell approach, the proposed DAC allows very low design effort, enables digital-like shrinkage across CMOS generations, low area at down-scaled technologies, and operation down to near-threshold voltages. The proposed DAC can operate at supply voltages that are significantly lower and/or at clock frequencies that are significantly greater than the intended design point, at the expense of moderate resolution degradation. In a 12-bit 40-nm testchip, graceful degradation of 0.3bit/100mV is achieved when V_DD is over-scaled down to 0.8V, and 1.4bit/100mV when further scaled down to 0.6V. The proposed DAC enables dynamic power-resolution tradeoff with 3X (2X) power saving for 1-bit resolution degradation at iso-sample rate (iso-resolution). A 12-bit DAC testchip designed with a fully automated standard cell flow in 40nm consumes 55µW at 27kS/s (9.1µW at 13.5kS/s) at a compact area of 500µm^2 and low voltage of 0.55V

A re-configurable pipeline ADC architecture with built-in self-test techniques

High-performance analog and mixed-signal integrated circuits are integral parts of today\u27s and future networking and communication systems. The main challenge facing the semiconductor industry is the ability to economically produce these analog ICs. This translates, in part, into the need to efficiently evaluate the performance of such ICs during manufacturing (production testing) and to come up with dynamic architectures that enable the performance of these ICs to be maximized during manufacturing and later when they\u27re operating in the field. On the performance evaluation side, this dissertation deals with the concept of Built-In-Self-Test (BIST) to allow the efficient and economical evaluation of certain classes of high-performance analog circuits. On the dynamic architecture side, this dissertation deals with pipeline ADCs and the use of BIST to dynamically, during production testing or in the field, re-configure them to produce better performing ICs.;In the BIST system proposed, the analog test signal is generated on-chip by sigma-delta modulation techniques. The performance of the ADC is measured on-chip by a digital narrow-band filter. When this system is used on the wafer level, significant testing time and thus testing cost can be saved.;A re-configurable pipeline ADC architecture to improve the dynamic performance is proposed. Based on dynamic performance measurements, the best performance configuration is chosen from a collection of possible pipeline configurations. This basic algorithm can be applied to many pipeline analog systems. The proposed grouping algorithm cuts down the number of evaluation permutation from thousands to 18 for a 9-bit ADC thus allowing the method to be used in real applications.;To validate the developments of this dissertation, a 40MS/s 9-bit re-configurable pipeline ADC was designed and implemented in TSMC\u27s 0.25mum single-poly CMOS digital process. This includes a fully differential folded-cascode gain-boosting operational amplifier with high gain and high unity-gain bandwidth. The experimental results strongly support the effectiveness of reconfiguration algorithm, which provides an average of 0.5bit ENOB improvement among the set of configurations. For many applications, this is a very significant performance improvement.;The BIST and re-configurability techniques proposed are not limited to pipeline ADCs only. The BIST methodology is applicable to many analog systems and the re-configurability is applicable to any analog pipeline system

Development of a Portable CMOS Time-Domain Fluorescence Lifetime Imager

Modern laboratory equipments to measure the excited-state lifetime of fluorophores usually include an expensive picosecond pulsed-laser excitation source, a fragile photomultiplier tube, and a large instrument body for optics. A portable and robust device to make fluorescence lifetime measurement in nanosecond scale is of great attraction for chemists and biologists. This dissertation reports the development of a portable LED time-domain fluorimeter from an all-solid-state discrete-component prototype to its advanced CMOS integrated circuit implementation. The motivation of the research is to develop a multiplexed fluorimeter for point-of-care diagnosis. Instruments developed by this novel method have higher fill factor, are more portable, and are fabricated at lower cost