Modeling, Design and Optimization of IC Power Delivery with On-Chip Regulation

As IC technology continues to follow the Moore’s Law, IC designers have been constantly challenged with power delivery issues. While useful power must be reliably delivered to the on-die functional circuits to fulfill the desired functionality and performance, additional power overheads arise due to the loss associated with voltage conversion and parasitic resistance in the metal wires. Hence, one of the key IC power delivery design challenges is to develop voltage conversion/regulation circuits and the corresponding design strategies to provide a guaranteed level of power integrity while achieving high power efficiency and low area overhead. On-chip voltage regulation, a significant ongoing design trend, offers appealing active supply noise suppression close to the loads and is well positioned to address many power delivery challenges. However, to realize the full potential of on-chip voltage regulation requires systemic optimization of and tradeoffs among settling time, steady-state error, power supply noise, power efficiency, stability and area overhead, which are the key focuses of this dissertation. First, we develop new low-dropout voltage regulators (LDOs) that are well optimized for low power applications. To this end, dropout voltage, bias current and speed are important competing design objectives. This dissertation presents new flipped voltage follower (FVF) based topologies of on-chip voltage regulators that handle ultra-fast load transients in nanoseconds while achieving significant improvement on bias current consumption. An active frequency compensation is embedded to achieve high area efficiency by employing a smaller amount of compensation capacitors, the major silicon area contributor. Furthermore, in one of the proposed topologies an auxiliary digital feedback loop is employed in order to lower quiescent power consumption further. Second, coping with supply noise is becoming increasingly more difficult as design complexity grows, which leads to increased spatial and temporal load heterogeneity, and hence larger voltage variations in a given power domain. Addressing this challenge through a distributed methodology wherein multiple voltage regulators are placed across the same voltage domain is particularly promising. This distributive nature allows for even faster suppression of multiple hot spots by the nearby regulators within the power domain and can significantly boost power integrity. Nevertheless, reasoning about the stability of such distributively regulated power networks becomes rather complicated as a result of complex interactions between multiple active regulators and the large passive subnetwork. Coping with this stability challenge requires new theory and stability-ensuring design practice, as targeted by this dissertation. For the first time, we adopt and develop a hybrid stability framework for large power delivery networks with distributed voltage regulation. This framework is local in the sense that both the checking and assurance of network stability can be dealt with on the basis of each individual voltage regulator, leading to feasible design of large power delivery networks that would be computationally impossible otherwise. Accordingly, we propose a new hybrid stability margin concept, examine its tradeoffs with power efficiency, supply noise and silicon area, and demonstrate the resulted key design implications pertaining to new stability-ensuring LDO circuit design techniques and circuit topologies. Finally, we develop an automated hybrid stability design flow that is computationally efficient and provides a practical guarantee of network stability

On-Chip Power Supply Noise: Scaling, Suppression and Detection

Design metrics such as area, timing and power are generally considered as the primary criteria in the design of modern day circuits, however, the minimization of power supply noise, among other noise sources, is appreciably more important since not only can it cause a degradation in these parameters but can cause entire chips to fail. Ensuring the integrity of the power supply voltage in the power distribution network of a chip is therefore crucial to both building reliable circuits as well as preventing circuit performance degradation. Power supply noise concerns, predicted over two decades ago, continue to draw significant attention, and with present CMOS technology projected to keep on scaling, it is shown in this work that these issues are not expected to diminish. This research also considers the management and on-chip detection of power supply noise. There are various methods of managing power supply noise, with the use of decoupling capacitors being the most common technique for suppressing the noise. An in-depth analysis of decap structures including scaling effects is presented in this work with corroborating silicon results. The applicability of various decaps for given design constraints is provided. It is shown that MOS-metal hybrid structures can provide a significant increase in capacitance per unit area compared to traditional structures and will continue to be an important structure as technology continues to scale. Noise suppression by means of current shifting within the clock period of an ALU block is further shown to be an additional method of reducing the minimum voltage observed on its associated supply. A simple, and area and power efficient technique for on-chip supply noise detection is also proposed

Study of Layout Techniques in Dynamic Logic Circuitry for Single Event Effect Mitigation

Dynamic logic circuits are highly suitable for high-speed applications, considering the fact that they have a smaller area and faster transition. However, their application in space or other radiation-rich environments has been significantly inhibited by their susceptibility to radiation effects. This work begins with the basic operations of dynamic logic circuits, elaborates upon the physics underlying their radiation vulnerability, and evaluates three techniques that harden dynamic logic from the layout: drain extension, pulse quenching, and a proposed method. The drain extension method adds an extra drain to the sensitive node in order to improve charge sharing, the pulse quenching scheme utilizes charge sharing by duplicating a component that offsets the transient pulse, and the proposed technique takes advantage of both. Domino buffers designed using these three techniques, along with a conventional design as reference, were modeled and simulated using a 3D TCAD tool. Simulation results confirm a significant reduction of soft error rate in the proposed technique and suggest a greater reduction with angled incidence. A 130 nm chip containing designed buffer and register chains was fabricated and tested with heavy ion irradiation. According to the experiment results, the proposed design achieved 30% soft error rate reduction, with 19%, 20%, and 10% overhead in speed, power, and area, respectively

Circuit and System Level Design Optimization for Power Delivery And Management

As the VLSI technology scales to the nanometer scale, power consumption has become a critical design concern of VLSI circuits. Power gating and dynamic voltage and frequency scaling (DVFS) are two effective power management techniques that are widely utilized in modern chip designs. Various design challenges merge with these power management techniques in nanometer VLSI circuits. For example, power gating introduces unique power integrity issues and trade-offs between switching noise and rush current noise. Assuring power integrity and achieving power efficiency are two highly intertwined design challenges. In addition, these trade-offs significantly vary with the supply voltage. It is difficult to use conventional power-gated power delivery networks (PDNs) to fully meet the involved conflicting design constraints while maximizing power saving and minimizing supply noise. The DVFS controller and the DC-DC power converter are two highly intertwining enablers for DVFS-based systems. However, traditional DVFS techniques treat the design optimizations of the two as separate tasks, giving rise to sub-optimal designs. To address the above research challenges, we propose several circuit and system level design optimization techniques in this dissertation. For power-gated PDN designs, we propose systemic decoupling capacitor (decap) optimization strategies that optimally trade-off between power integrity and leakage saving. First, new global decap and re-routable decap design concepts are proposed to relax the tight interaction between power integrity and leakage power saving of power-gated PDN at a single supply voltage level. Furthermore, we propose to leverage re-routable decaps to provide flexible decap allocation structures to better suit multiple supply voltage levels. The proposed strategies are implemented in an automatic design flow for choosing optimal amount of local decaps, global decaps and re-routable decaps. The proposed techniques significantly increase leakage saving without jeopardizing power integrity. The flexible decap allocations enabled by re-routable decaps lead to optimal design trade-offs for PDNs operating with two supply voltage levels. To improve the effectiveness of DVFS, we analyze the drawbacks of circuit-level only and policy-level only optimizations and the promising opportunities resulted from the cross-layer co-optimization of the DC-DC converter and online learning based DVFS polices. We present a cross-layer approach that optimizes transition time, area, energy overhead of the DC-DC converter along with key parameters of an online learning DVFS controller. We systematically evaluate the benefits of the proposed co-optimization strategy based on several processor architectures, namely single and dual-core processors and processors with DVFS and power gating. Our results indicate that the co-optimization can introduce noticeable additional energy saving without significant performance degradation

Scalable Analysis, Verification and Design of IC Power Delivery

Due to recent aggressive process scaling into the nanometer regime, power delivery network design faces many challenges that set more stringent and specific requirements to the EDA tools. For example, from the perspective of analysis, simulation efficiency for large grids must be improved and the entire network with off-chip models and nonlinear devices should be able to be analyzed. Gated power delivery networks have multiple on/off operating conditions that need to be fully verified against the design requirements. Good power delivery network designs not only have to save the wiring resources for signal routing, but also need to have the optimal parameters assigned to various system components such as decaps, voltage regulators and converters. This dissertation presents new methodologies to address these challenging problems. At first, a novel parallel partitioning-based approach which provides a flexible network partitioning scheme using locality is proposed for power grid static analysis. In addition, a fast CPU-GPU combined analysis engine that adopts a boundary-relaxation method to encompass several simulation strategies is developed to simulate power delivery networks with off-chip models and active circuits. These two proposed analysis approaches can achieve scalable simulation runtime. Then, for gated power delivery networks, the challenge brought by the large verification space is addressed by developing a strategy that efficiently identifies a number of candidates for the worst-case operating condition. The computation complexity is reduced from O(2^N) to O(N). At last, motivated by a proposed two-level hierarchical optimization, this dissertation presents a novel locality-driven partitioning scheme to facilitate divide-and-conquer-based scalable wire sizing for large power delivery networks. Simultaneous sizing of multiple partitions is allowed which leads to substantial runtime improvement. Moreover, the electric interactions between active regulators/converters and passive networks and their influences on key system design specifications are analyzed comprehensively. With the derived design insights, the system-level co-design of a complete power delivery network is facilitated by an automatic optimization flow. Results show significant performance enhancement brought by the co-design

Energy-efficient data converter design in scaled CMOS technology

Data converters bridge the physical and digital worlds. They have been the crucial building blocks in modern electronic systems, and are expected to have a growing significance in the booming era of Internet-of-Things (IoT) and 5G communications. The applications raise energy-efficiency requirements for both low-speed and high-speed converters since they are widely deployed in wireless sensor nodes and portable devices. To explore the solutions, the author worked on three directions: 1) techniques to improve the efficiency of the low-speed converters including the comparator; 2) techniques to develop high-speed data converters including the reference stabilization; 3) new architecture to improve the efficiency of the capacitance-to-digital converter (CDC). In the first part, a power-efficient 10-bit SAR ADC featured with a gain-boosted dynamic comparator is presented. In energy-constrained applications, the converter is usually supplied with low supply voltage (e.g., 0.3 V-0.5 V), which reduces the comparator pre-amplifier (pre-amp) gain and results in higher noise. A novel comparator topology with a dynamic common-gate stage is proposed to increase the pre-amplification gain, thereby reducing noise and offset. Besides, statistical estimation and loading switching techniques are combined to further improve energy efficiency. A 40-nm CMOS prototype achieves a Walden FoM of 1.5 fJ/conversion-step while operating at 100-kS/s from a 0.5-V supply. To further improve the energy-efficiency of the comparator, a novel dynamic pre-amp is proposed. By using an inverter-based input pair powered by a floating reservoir capacitor, the pre-amp realizes both current reuse and dynamic bias, thereby significantly boosting g [subscript m] /I [subscript D] and reducing noise. Moreover, it greatly reduces the influence of the input common-mode (CM) voltage on the comparator performance, including noise, offset, and delay. A prototype comparator in 180-nm achieves 46-μV input-referred noise while consuming only 1 pJ per comparison under 1.2-V supply, which represents greater than 7 times energy efficiency boost compared to that of a Strong-Arm (SA) latch. The second part of this dissertation focuses on high-speed data converter techniques. A 10-bit high-speed two-stage loop-unrolled SAR ADC is presented. To reduce the SAR logic delay and power, each bit uses a dedicated comparator to store its output and generate an asynchronous clock for the next comparison. To suppress the comparator offset mismatch induced non-linearity, a shared pre-amp are employed in the second fine stage, which is implemented by a dynamic latch to avoid static power consumption. The prototype ADC in 40-nm CMOS achieves 55-dB peak SNDR at 200-MS/s sampling rate without any calibration. A key limiting factor for the SAR ADC to simultaneously achieve high speed and high resolution is the reference ripple settling problem caused by DAC switching. Unlike prior techniques that aim to minimize the reference ripple which requires large reference buffer power or on-chip decoupling capacitance area, this work proposes a new perspective: it provides an extra path for the full-sized reference ripple to couple to the comparator but with an opposite polarity, so that the effect of the reference ripple is canceled out, thus ensuring an accurate conversion result. The prototype 10-bit 120-MS/s SAR ADC is fabricated in 40-nm CMOS process and achieves an SNDR of 55 dB with only 3 pF reference decoupling capacitor. Finally, this dissertation also presents the design of an incremental time-domain two-step CDC. Unlike the classic two-step CDC, this work replaces the OTA-based active-RC integrator with a VCO-based integrator and performs time domain (TD) ΔΣ modulation. The VCO is mostly digital and consumes low power. Featuring the infinite DC gain in phase domain and intrinsic spatial phase quantization, this TDΔΣ enables a CDC design, achieving 85-dB SQNR by having only a 4-bit quantizer, a 1st-order loop and a low OSR of 15. The prototype fabricated in 40-nm CMOS achieves a resolution of 0.29 fF while dissipating only 0.083 nJ per conversion, which improves the energy efficiency by greater than 2 times comparing to that of state-of-the-art CDCsElectrical and Computer Engineerin

Recent Trends in Communication Networks

In recent years there has been many developments in communication technology. This has greatly enhanced the computing power of small handheld resource-constrained mobile devices. Different generations of communication technology have evolved. This had led to new research for communication of large volumes of data in different transmission media and the design of different communication protocols. Another direction of research concerns the secure and error-free communication between the sender and receiver despite the risk of the presence of an eavesdropper. For the communication requirement of a huge amount of multimedia streaming data, a lot of research has been carried out in the design of proper overlay networks. The book addresses new research techniques that have evolved to handle these challenges

Ultra high-density hybrid pixel sensors for the detection of charge particles

L'abstract è presente nell'allegato / the abstract is in the attachmen

Adaptive Receiver Design for High Speed Optical Communication

Conventional input/output (IO) links consume power, independent of changes in the bandwidth demand by the system they are deployed in. As the system is designed to satisfy the peak bandwidth demand, most of the time the IO links are idle but still consuming power. In big data centers, the overall utilization ratio of IO links is less than 10%, corresponding to a large amount of energy wasted for idle operation. This work demonstrates a 60 Gb/s high sensitivity non-return-to-zero (NRZ) optical receiver in 14 nm FinFET technology with less than 7 ns power-on time. The power on time includes the data detection, analog bias settling, photo-diode DC current cancellation, and phase locking by the clock and data recovery circuit (CDR). The receiver autonomously detects the data demand on the link via a proposed link protocol and does not require any external enable or disable signals. The proposed link protocol is designed to minimize the off-state power consumption and power-on time of the link. In order to achieve high data-rate and high-sensitivity while maintaining the power budget, a 1-tap decision feedback equalization method is applied in digital domain. The sensitivity is measured to be -8 dBm, -11 dBm, and -13 dBm OMA (optical modulation amplitude) at 60 Gb/s, 48 Gb/s, and 32 Gb/s data rates, respectively. The energy efficiency in always-on mode is around 2.2 pJ/bit for all data-rates with the help of supply and bias scaling. The receiver incorporates a phase interpolator based clock-and-data recovery circuit with approximately 80 MHz jitter-tolerance corner frequency, thanks to the low-latency full custom CDR logic design. This work demonstrates the fastest ever reported CMOS optical receiver and runs almost at twice the data-rate of the state-of-the-art CMOS optical receiver by the time of the publication. The data-rate is comparable to BiCMOS optical receivers but at a fraction of the power consumption

Low-Leakage ESD Power Supply Clamps in General Purpose 65 nm CMOS Technology

Electrostatic discharge (ESD) is a well-known contributor that reduces the reliability and yield of the integrated circuits (ICs). As ICs become more complex, they are increasingly susceptible to such failures due to the scaling of physical dimensions of devices and interconnect on a chip [1]. These failures are caused by excessive electric field and/or excessive current densities and result in the dielectric breakdown, electromigration of metal lines and contacts. ESD can affect the IC in its different life stages, from wafer fabrication process to failure in the field. Furthermore, ESD events can damage the integrated circuit permanently (hard failure), or cause a latent damage (soft failure) [2]. ESD protection circuits consisting of I/O protection and ESD power supply clamps are routinely used in ICs to protect them against ESD damage. The main objective of the ESD protection circuit is to provide a low-resistive discharge path between any two pins of the chip to harmlessly discharge ESD energy without damaging the sensitive circuits. The main target of this thesis is to design ESD power supply clamps that have the lowest possible leakage current without degrading the ESD protection ability in general purpose TSMC 65 nm CMOS technology. ESD clamps should have a very low-leakage current and should be stable and immune to the power supply noise under the normal operating conditions of the circuit core. Also, the ESD clamps must be able to handle high currents under an ESD event. All designs published in the general purpose 65 nm CMOS technology have used the SCR as the clamping element since the SCR has a higher current carrying capability compared to an MOS transistor of the same area [3]. The ESD power supply clamp should provide a low-resistive path in both directions to be able to deal with both PSD and NDS zapping modes. The SCR based design does not provide the best ESD protection for the NDS zapping mode (positive ESD stress at VSS with grounded VDD node) since it has two parasitic resistances (RNwell and RPsub) and one parasitic diode (the collector to base junction diode of the PNP transistor) in the path from the VSS to VDD. Furthermore, SCR-based designs are not suitable for application that exposed to hot switching or ionizing radiation [2]. In GP process, the gate oxide thickness of core transistors is reduced compared with LP process counterpart to achieve higher performance designs for high-frequency applications using 1 V core transistors and 2.5 V I/O option. The thinner gate oxide layer results in higher leakage current due to gate tunneling [4]. Therefore, using large thin oxide MOS transistors as clamping elements will result in a huge leakage. In this thesis, four power supply ESD clamps are proposed in which thick oxide MOS transistors are used as the main clamping element. Therefore, the low-leakage current feature is achieved without significantly degrading the ESD performance. In addition, the parasitic diode of the MOS transistors provides the protection against NSD-mode. In this thesis, two different ESD power supply clamp architectures are proposed: standalone ESD power supply clamps and hybrid ESD power supply clamps. Two standalone clamps are proposed: a transient PMOS based ESD clamp with thyristor delay element (PTC), and a static diode triggered power supply (DTC). The standalone clamps were designed to protect the circuit core against ±125 V CDM stress by limiting the voltage between the two power rails to less than the oxide breakdown voltage of the core transistors, BVOXESD = 5 V. The large area of this architecture was the price for maintaining the low-leakage current and an adequate ESD protection. The hybrid clamp architecture was proposed to provide a higher ESD protection, against ±300 V CDM stress, while reducing the layout area and maintaining the low-leakage feature. In the hybrid clamp structure, two clamps are connected in parallel between the two power supply rails, a static clamp, and a transient clamp. The static clamp triggers first and starts to sink the ESD energy and then an RC network triggers the primary transient clamp to sink most of the ESD stress. Two hybrid designs were proposed: PMOS ESD power supply clamp with thyristor delay element and diodes (PTDC), and NMOS ESD power supply clamp with level shifter delay element and diode (NLDC). Simulation results show that the proposed clamps are capable of protecting the circuit core against ±1.5 kV HBM and at least against ±125 V CDM stresses. The measurement results show that all of the proposed clamps are immune against false triggering, and transient induced latch-up. Furthermore, all four designs have responded favorably to the 4 V ESD-like pulse voltage under both chip powered and not powered conditions and after the stress ends the designs turned off. Finally, TLP measurement results show that all four proposed designs meet the minimum design requirement of the ESD protection circuit in the 65 nm CMOS technology (i.e. HBM protection level of ±1.5 kV )