A DOUBLE-DIFFERENTIAL-INPUT /DIFFERENTIAL-OUTPUT FULLY COMPLEMENTARY AND SELF-BIASED ASYNCHRONOUS CMOS COMPARATOR

A novel fully complementary and fully differential asynchronous CMOS comparator architecture, that consists of a two-stage preamplifier cas- caded with a latch, achieves a sub-100 ps propagation delay for a 50mVpp and higher input signal amplitudes under 1.1V supply and 2.1mWpower consumption. The proposed voltage comparator topology features two differential pairs of inputs (four in total) thus increasing signal-to-noise ratio (SNR) and noise immunity through rejection of the coupled noise components, reduced even-order harmonic distortion, and doubled output voltage swing. In addition to that, the comparator is truly self-biased via negative feedback loop thereby eliminating the need for a voltage reference and suppressing the influence of process, supply voltage and ambient temperature variations. The described analog comparator prototype occupies 0.001mm2 in a purely digital 40 nm LP (low-power) CMOS process technology. All the above mentioned merits make it highly attractive for use as a building block in implementation of the leading-edge system-on-chip (SoC) data transceivers and data converters

A CMOS implementation of a spike event coding scheme for analog arrays

This paper presents a CMOS circuit implementation of a spike event coding/decoding scheme for transmission of analog signals in a programmable analog array. This scheme uses spikes for a time representation of analog signals. No spikes are transmitted using this scheme when signals are constant, leading to low power dissipation and traffic reduction in a shared channel. A proof-of-concept chip was designed in a 0.35 mum process and experimental results are presented

Time-based, Low-power, Low-offset 5-bit 1 GS/s Flash ADC Design in 65nm CMOS Technology

Low-power, medium resolution, high-speed analog-to-digital converters (ADCs) have always been important block which have abundant applications such as digital signal processors (DSP), imaging sensors, environmental and biomedical monitoring devices. This study presents a low power Flash ADC designed in nanometer complementary metal-oxide semiconductors (CMOS) technology. Time analysis on the output delay of the comparators helps to generate one more bit. The proposed technique reduced the power consumption and chip area substantially in comparison to the previous state-of-the-art work. The proposed ADC was developed in TSMC 65nm CMOS technology. The offset cancellation technique was embedded in the proposed comparator to decrement the static offset of the comparator. Moreover, one more bit was generated without using extra comparators. The proposed ADC achieved 4.1 bits ENOB at input Nyquist frequency. The simulated differential and integral non-linearity static tests were equal to +0.26/-0.17 and +0.22/-0.15, respectively. The ADC consumed 7.7 mW at 1 GHz sampling frequency, achieving 415 fJ/Convstep Figure of Merit (FoM)

Low-power CMOS digital-pixel Imagers for high-speed uncooled PbSe IR applications

This PhD dissertation describes the research and development of a new low-cost medium wavelength infrared MWIR monolithic imager technology for high-speed uncooled industrial applications. It takes the baton on the latest technological advances in the field of vapour phase deposition (VPD) PbSe-based medium wavelength IR (MWIR) detection accomplished by the industrial partner NIT S.L., adding fundamental knowledge on the investigation of novel VLSI analog and mixed-signal design techniques at circuit and system levels for the development of the readout integrated device attached to the detector. The work supports on the hypothesis that, by the use of the preceding design techniques, current standard inexpensive CMOS technologies fulfill all operational requirements of the VPD PbSe detector in terms of connectivity, reliability, functionality and scalability to integrate the device. The resulting monolithic PbSe-CMOS camera must consume very low power, operate at kHz frequencies, exhibit good uniformity and fit the CMOS read-out active pixels in the compact pitch of the focal plane, all while addressing the particular characteristics of the MWIR detector: high dark-to-signal ratios, large input parasitic capacitance values and remarkable mismatching in PbSe integration. In order to achieve these demands, this thesis proposes null inter-pixel crosstalk vision sensor architectures based on a digital-only focal plane array (FPA) of configurable pixel sensors. Each digital pixel sensor (DPS) cell is equipped with fast communication modules, self-biasing, offset cancellation, analog-to-digital converter (ADC) and fixed pattern noise (FPN) correction. In-pixel power consumption is minimized by the use of comprehensive MOSFET subthreshold operation. The main aim is to potentiate the integration of PbSe-based infra-red (IR)-image sensing technologies so as to widen its use, not only in distinct scenarios, but also at different stages of PbSe-CMOS integration maturity. For this purpose, we posit to investigate a comprehensive set of functional blocks distributed in two parallel approaches: • Frame-based “Smart” MWIR imaging based on new DPS circuit topologies with gain and offset FPN correction capabilities. This research line exploits the detector pitch to offer fully-digital programmability at pixel level and complete functionality with input parasitic capacitance compensation and internal frame memory. • Frame-free “Compact”-pitch MWIR vision based on a novel DPS lossless analog integrator and configurable temporal difference, combined with asynchronous communication protocols inside the focal plane. This strategy is conceived to allow extensive pitch compaction and readout speed increase by the suppression of in-pixel digital filtering, and the use of dynamic bandwidth allocation in each pixel of the FPA. In order make the electrical validation of first prototypes independent of the expensive PbSe deposition processes at wafer level, investigation is extended as well to the development of affordable sensor emulation strategies and integrated test platforms specifically oriented to image read-out integrated circuits. DPS cells, imagers and test chips have been fabricated and characterized in standard 0.15μm 1P6M, 0.35μm 2P4M and 2.5μm 2P1M CMOS technologies, all as part of research projects with industrial partnership. The research has led to the first high-speed uncooled frame-based IR quantum imager monolithically fabricated in a standard VLSI CMOS technology, and has given rise to the Tachyon series [1], a new line of commercial IR cameras used in real-time industrial, environmental and transportation control systems. The frame-free architectures investigated in this work represent a firm step forward to push further pixel pitch and system bandwidth up to the limits imposed by the evolving PbSe detector in future generations of the device.La present tesi doctoral descriu la recerca i el desenvolupament d'una nova tecnologia monolítica d'imatgeria infraroja de longitud d'ona mitja (MWIR), no refrigerada i de baix cost, per a usos industrials d'alta velocitat. El treball pren el relleu dels últims avenços assolits pel soci industrial NIT S.L. en el camp dels detectors MWIR de PbSe depositats en fase vapor (VPD), afegint-hi coneixement fonamental en la investigació de noves tècniques de disseny de circuits VLSI analògics i mixtes pel desenvolupament del dispositiu integrat de lectura unit al detector pixelat. Es parteix de la hipòtesi que, mitjançant l'ús de les esmentades tècniques de disseny, les tecnologies CMOS estàndard satisfan tots els requeriments operacionals del detector VPD PbSe respecte a connectivitat, fiabilitat, funcionalitat i escalabilitat per integrar de forma econòmica el dispositiu. La càmera PbSe-CMOS resultant ha de consumir molt baixa potència, operar a freqüències de kHz, exhibir bona uniformitat, i encabir els píxels actius CMOS de lectura en el pitch compacte del pla focal de la imatge, tot atenent a les particulars característiques del detector: altes relacions de corrent d'obscuritat a senyal, elevats valors de capacitat paràsita a l'entrada i dispersions importants en el procés de fabricació. Amb la finalitat de complir amb els requisits previs, es proposen arquitectures de sensors de visió de molt baix acoblament interpíxel basades en l'ús d'una matriu de pla focal (FPA) de píxels actius exclusivament digitals. Cada píxel sensor digital (DPS) està equipat amb mòduls de comunicació d'alta velocitat, autopolarització, cancel·lació de l'offset, conversió analògica-digital (ADC) i correcció del soroll de patró fixe (FPN). El consum en cada cel·la es minimitza fent un ús exhaustiu del MOSFET operant en subllindar. L'objectiu últim és potenciar la integració de les tecnologies de sensat d'imatge infraroja (IR) basades en PbSe per expandir-ne el seu ús, no només a diferents escenaris, sinó també en diferents estadis de maduresa de la integració PbSe-CMOS. En aquest sentit, es proposa investigar un conjunt complet de blocs funcionals distribuïts en dos enfocs paral·lels: - Dispositius d'imatgeria MWIR "Smart" basats en frames utilitzant noves topologies de circuit DPS amb correcció de l'FPN en guany i offset. Aquesta línia de recerca exprimeix el pitch del detector per oferir una programabilitat completament digital a nivell de píxel i plena funcionalitat amb compensació de la capacitat paràsita d'entrada i memòria interna de fotograma. - Dispositius de visió MWIR "Compact"-pitch "frame-free" en base a un novedós esquema d'integració analògica en el DPS i diferenciació temporal configurable, combinats amb protocols de comunicació asíncrons dins del pla focal. Aquesta estratègia es concep per permetre una alta compactació del pitch i un increment de la velocitat de lectura, mitjançant la supressió del filtrat digital intern i l'assignació dinàmica de l'ample de banda a cada píxel de l'FPA. Per tal d'independitzar la validació elèctrica dels primers prototips respecte a costosos processos de deposició del PbSe sensor a nivell d'oblia, la recerca s'amplia també al desenvolupament de noves estratègies d'emulació del detector d'IR i plataformes de test integrades especialment orientades a circuits integrats de lectura d'imatge. Cel·les DPS, dispositius d'imatge i xips de test s'han fabricat i caracteritzat, respectivament, en tecnologies CMOS estàndard 0.15 micres 1P6M, 0.35 micres 2P4M i 2.5 micres 2P1M, tots dins el marc de projectes de recerca amb socis industrials. Aquest treball ha conduït a la fabricació del primer dispositiu quàntic d'imatgeria IR d'alta velocitat, no refrigerat, basat en frames, i monolíticament fabricat en tecnologia VLSI CMOS estàndard, i ha donat lloc a Tachyon, una nova línia de càmeres IR comercials emprades en sistemes de control industrial, mediambiental i de transport en temps real.Postprint (published version

Development of a Waveform Sampling ASIC with Femtosecond Timing for a Low Occupancy Vertex Detector.

Ph.D. Thesis. University of Hawaiʻi at Mānoa 2018

Energy Efficient Pipeline ADCs Using Ring Amplifiers

Pipeline ADCs require accurate amplification. Traditionally, an operational transconductance amplifier (OTA) configured as a switched-capacitor (SC) amplifier performs such amplification. However, traditional OTAs limit the power efficiency of ADCs since they require high quiescent current for slewing and bandwidth. In addition, it is difficult to design low-voltage OTAs in modern, scaled CMOS. The ring amplifier is an energy efficient and high output swing alternative to an OTA for SC circuits which is basically a three-stage inverter amplifier stabilized in a feedback configuration. However, the conventional ring amplifier requires external biases, which makes the ring amplifier less practical when we consider process, supply voltage, and temperature (PVT) variation. In this dissertation, three types of innovative ring amplifiers are presented and verified with state-of-the-art energy efficient pipeline ADCs. These new ring amplifiers overcome the limitations of the conventional ring amplifier and further improve energy efficiency. The first topic of this dissertation is a self-biased ring amplifier that makes the ring amplifier more practical and power efficient, while maintaining the benefits of efficient slew-based charging and an almost rail-to-rail output swing. In addition, the ring amplifiers are also used as comparators in the 1.5b sub-ADCs by utilizing the unique characteristics of the ring amplifier. This removes the need for dedicated comparators in sub-ADCs, thus further reducing the power consumption of the ADC. The prototype 10.5b 100 MS/s comparator-less pipeline ADC with the self-biased ring amplifiers has measured SNDR, SNR and SFDR of 56.6 dB (9.11b), 57.5 dB and 64.7 dB, respectively, and consumes 2.46 mW, which results in Walden Figure-of-Merit (FoM) of 46.1 fJ/ conversion∙step. The second topic is a fully-differential ring amplifier, which solves the problems of single-ended ring amplifiers while maintaining the benefits of the single-ended ring amplifiers. This differential ring-amplifier is applied in a 13b 50 MS/s SAR-assisted pipeline ADC. Furthermore, an improved capacitive DAC switching method for the first stage SAR reduces the DAC linearity errors and switching energy. The prototype ADC achieves measured SNDR, SNR and SFDR of 70.9 dB (11.5b), 71.3 dB and 84.6 dB, respectively, and consumes 1 mW. This measured performance is equivalent to Walden and Schreier FoMs of 6.9 fJ/conversion∙step and 174.9 dB, respectively. Finally, a four-stage fully-differential ring amplifier improves the small-signal gain to over 90 dB without compromising speed. In addition, a new auto-zero noise filtering method reduces noise without consuming additional power. This is more area efficient than the conventional auto-zero noise folding reduction technique. A systematic mismatch free SAR CDAC layout method is also presented. The prototype 15b 100 MS/s calibration-free SAR-assisted pipeline ADC using the four-stage ring amplifier achieves 73.2 dB SNDR (11.9b) and 90.4 dB SFDR with a 1.1 V supply. It consumes 2.3 mW resulting in Schreier FoM of 176.6 dB.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/138759/1/yonglim_1.pd

Exploration and Design of High Performance Variation Tolerant On-Chip Interconnects

Siirretty Doriast

Rail-to-Rail Operational in Low-Power Reconfigurable Analog Circuitry

Analog signal processing (ASP) can be used to decrease energy consumption by several orders of magnitude over completely digital applications. Low-power field programmable analog arrays (FPAA) have been previously used by analog designers to decrease energy consumption. Combining ASP with an FPAA, energy consumption of these systems can be further reduced. For ASP to be most functional, it must achieve rail-to-rail operation to maintain a high dynamic range. This work strives to further reduce power consumption in reconfigurable analog circuitry by presenting a novel data converter that utilizes ASP and rail-to-rail operation. Rail-to-Rail operation is achieved in the data converter with the use of an operational amplifier presented in this work. This efficient yet elementary data converter has been fabricated in a 0.5$\mu$m standard CMOS process. Additionally, this work looks deeper into the challenges of students working remotely, how MATLAB can be used to create circuit design tools, and how these developmental tools can be used by circuit design students

INTEGRATED SINGLE-PHOTON SENSING AND PROCESSING PLATFORM IN STANDARD CMOS

Practical implementation of large SPAD-based sensor arrays in the standard CMOS process has been fraught with challenges due to the many performance trade-offs existing at both the device and the system level [1]. At the device level the performance challenge stems from the suboptimal optical characteristics associated with the standard CMOS fabrication process. The challenge at the system level is the development of monolithic readout architecture capable of supporting the large volume of dynamic traffic, associated with multiple single-photon pixels, without limiting the dynamic range and throughput of the sensor. Due to trade-offs in both functionality and performance, no general solution currently exists for an integrated single-photon sensor in standard CMOS single photon sensing and multi-photon resolution. The research described herein is directed towards the development of a versatile high performance integrated SPAD sensor in the standard CMOS process. Towards this purpose a SPAD device with elongated junction geometry and a perimeter field gate that features a large detection area and a highly reduced dark noise has been presented and characterized. Additionally, a novel front-end system for optimizing the dynamic range and after-pulsing noise of the pixel has been developed. The pixel is also equipped with an output interface with an adjustable pulse width response. In order to further enhance the effective dynamic range of the pixel a theoretical model for accurate dead time related loss compensation has been developed and verified. This thesis also introduces a new paradigm for electrical generation and encoding of the SPAD array response that supports fully digital operation at the pixel level while enabling dynamic discrete time amplitude encoding of the array response. Thus offering a first ever system solution to simultaneously exploit both the dynamic nature and the digital profile of the SPAD response. The array interface, comprising of multiple digital inputs capacitively coupled onto a shared quasi-floating sense node, in conjunction with the integrated digital decoding and readout electronics represents the first ever solid state single-photon sensor capable of both photon counting and photon number resolution. The viability of the readout architecture is demonstrated through simulations and preliminary proof of concept measurements