108 research outputs found

    A Fully-Integrated CMOS LDO Regulator for Battery-Operated On-Chip Measurement Systems

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    This paper presents a fully-integrated 0.18 mu m CMOS low drop-out (LDO) regulator designed to drive on-chip low power frontend sensor nodes. The proposed LDO is based on a simple telescopic amplifier stage with internal cascode compensation driving a PMOS pass-device, providing a high precision 1.8 V output voltage for input voltages from 3.6 V to 1.92 V up to a 50 mA load current with only 22 mu A quiescent current. Line and load regulation are respectively better than 0.017 mV/V and 0.003 mV/mA, while recovery times are below 4 mu s over a (-40 degrees C, 120 degrees C) temperature span

    A 180nm CMOS Capacitorless Low Drop-Out Regulator for Battery-operated System

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    This paper presents a fully-integrated 180nm CMOS low drop-out regulator based on a simple telescopic cascode-compensated amplifier driving a PMOS pass-device. It provides a high precision 1.8V output voltage for battery voltages from 3.6V to 1.93V up to a 50mA load current with only 22μA quiescent current

    A Low-quiescent Current Full on-chip 1.2 V CMOS Low Drop-Out Regulator

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    This paper presents a fully-integrated low-power 0.18 µm CMOS Low-Dropout (LDO) regulator for battery operated portable devices. It provides an accurate 1.2 V output voltage from 3.3 V to 1.3 V input voltages up with only 5.9 µA quiescent current, including an all-MOS 0.4 V reference voltage

    CMOS Design of Reconfigurable SoC Systems for Impedance Sensor Devices

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    La rápida evolución en el campo de los sensores inteligentes, junto con los avances en las tecnologías de la computación y la comunicación, está revolucionando la forma en que recopilamos y analizamos datos del mundo físico para tomar decisiones, facilitando nuevas soluciones que desempeñan tareas que antes eran inconcebibles de lograr.La inclusión en un mismo dado de silicio de todos los elementos necesarios para un proceso de monitorización y actuación ha sido posible gracias a los avances en micro (y nano) electrónica. Al mismo tiempo, la evolución de las tecnologías de procesamiento y micromecanizado de superficies de silicio y otros materiales complementarios ha dado lugar al desarrollo de sensores integrados compatibles con CMOS, lo que permite la implementación de matrices de sensores de alta densidad. Así, la combinación de un sistema de adquisición basado en sensores on-Chip, junto con un microprocesador como núcleo digital donde se puede ejecutar la digitalización de señales, el procesamiento y la comunicación de datos proporciona características adicionales como reducción del coste, compacidad, portabilidad, alimentación por batería, facilidad de uso e intercambio inteligente de datos, aumentando su potencial número de aplicaciones.Esta tesis pretende profundizar en el diseño de un sistema portátil de medición de espectroscopía de impedancia de baja potencia operado por batería, basado en tecnologías microelectrónicas CMOS, que pueda integrarse con el sensor, proporcionando una implementación paralelizable sin incrementar significativamente el tamaño o el consumo, pero manteniendo las principales características de fiabilidad y sensibilidad de un instrumento de laboratorio. Esto requiere el diseño tanto de la etapa de gestión de la energía como de las diferentes celdas que conforman la interfaz, que habrán de satisfacer los requisitos de un alto rendimiento a la par que las exigentes restricciones de tamaño mínimo y bajo consumo requeridas en la monitorización portátil, características que son aún más críticas al considerar la tendencia actual hacia matrices de sensores.A nivel de celdas, se proponen diferentes circuitos en un proceso CMOS de 180 nm: un regulador de baja caída de voltaje como unidad de gestión de energía, que proporciona una alimentación de 1.8 V estable, de bajo ruido, precisa e independiente de la carga para todo el sistema; amplificadores de instrumentación con una aproximación completamente diferencial, que incluyen una etapa de entrada de voltaje/corriente configurable, ganancia programable y ancho de banda ajustable, tanto en la frecuencia de corte baja como alta; un multiplicador para conformar la demodulación dual, que está embebido en el amplificador para optimizar consumo y área; y filtros pasa baja totalmente integrados, que actúan como extractores de magnitud de DC, con frecuencias de corte ajustables desde sub-Hz hasta cientos de Hz.<br /

    Integrated circuit & system design for concurrent amperometric and potentiometric wireless electrochemical sensing

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    Complementary Metal-Oxide-Semiconductor (CMOS) biosensor platforms have steadily grown in healthcare and commerial applications. This technology has shown potential in the field of commercial wearable technology, where CMOS sensors aid the development of miniaturised sensors for an improved cost of production and response time. The possibility of utilising wireless power and data transmission techniques for CMOS also allows for the monolithic integration of the communication, power and sensing onto a single chip, which greatly simplifies the post-processing and improves the efficiency of data collection. The ability to concurrently utilise potentiometry and amperometry as an electrochemical technique is explored in this thesis. Potentiometry and amperometry are two of the most common transduction mechanisms for electrochemistry, with their own advantages and disadvantages. Concurrently applying both techniques will allow for real-time calibration of background pH and for improved accuracy of readings. To date, developing circuits for concurrently sensing potentiometry and amperometry has not been explored in the literature. This thesis investigates the possibility of utilising CMOS sensors for wireless potentiometric and amperometric electrochemical sensing. To start with, a review of potentiometry and amperometry is evaluated to understand the key factors behind their operation. A new configuration is proposed whereby the reference electrode for both electrochemistry techniques are shared. This configuration is then compared to both the original configurations to determine any differences in the sensing accuracy through a novel experiment that utilises hydrogen peroxide as a measurement analyte. The feasibility of the configuration with the shared reference electrode is proven and utilised as the basis of the electrochemical configuration for the front end circuits. A unique front-end circuit named DAPPER is developed for the shared reference electrode topology. A review of existing architectures for potentiometry and amperometry is evaluated, with a specific focus on low power consumption for wireless applications. In addition, both the electrochemical sensing outputs are mixed into a single output data channel for use with a near-field communication (NFC). This mixing technique is also further analysed in this thesis to understand the errors arising due to various factors. The system is fabricated on TSMC 180nm technology and consumes 28µW. It measures a linear input current range from 250pA - 0.1µW, and an input voltage range of 0.4V - 1V. This circuit is tested and verified for both electrical and electrochemical tests to showcase its feasibility for concurrent measurements. This thesis then provides the integration of wireless blocks into the system for wireless powering and data transmission. This is done through the design of a circuit named SPACEMAN that consists of the concurrent sensing front-end, wireless power blocks, data transmission, as well as a state machine that allows for the circuit to switch between modes: potentiometry only, amperometry only, concurrent sensing and none. The states are switched through re-booting the circuit. The core size of the electronics is 0.41mm² without the coil. The circuit’s wireless powering and data transmission is tested and verified through the use of an external transmitter and a connected printed circuit board (PCB) coil. Finally, the future direction for ongoing work to proceed towards a fully monolithic electrochemical technique is discussed through the next development of a fully integrated coil-on-CMOS system, on-chip electrodes with the electroplating and microfludics, the development of an external transmitter for powering the device and a test platform. The contributions of this thesis aim to formulate a use for wireless electrochemical sensors capable of concurrent measurements for use in wearable devices.Open Acces

    A high-speed low-dropout voltage regulator using a compact output driver

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    Orientadores: Elnatan Chagas Ferreira, Sandro Augusto Pavlik HaddadTese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de ComputaçãoResumo: Ao longo dos anos, microcontroladores tornaram-se mais rápidos e mais poderosos em sua capacidade de processamento graças à evolução dos processos de fabricação. Os novos processos CMOS de menores geometrias exigem tolerâncias menores quanto à tensão de ali-mentação. A lógica digital nesses dispositivos exige que o regulador interno forneça uma ten-são de alimentação estável e precisa, muitas vezes sem o auxílio de um capacitor externo de desacoplamento, o que torna o projeto do regulador uma tarefa árdua devido à natureza da carga digital. São milhões de portas lógicas comutando simultaneamente que ocasionam picos de corrente que podem atingir dezenas de vezes o valor médio do consumo de corrente. Como resultado, o regulador interno deve ser projetado para atender a esse perfil de carga, especial-mente durante as transições de modos de operação. Em outras palavras, quando o microcon-trolador sai de um modo de ultrabaixo consumo (de poucos microampères) para outro modo de operação de alto consumo de potência (dezenas ou centenas de miliampères) e vice-versa. Esse trabalho apresenta a implementação de um regulador LDO (low dropout) utilizan-do um dispositivo de saída NMOS que não sofre de problemas de estabilidade em altas fre-quências. A nova topologia alcança redução de área de silício significativa no estágio de saída e resposta transitória muito rápida para transições agressivas de carga, sem a necessidade de capacitor externo. Um protótipo do circuito proposto foi implementado em tecnologia CMOS split gate TFS (Thin Film Storage) de 90 nm. O silício foi encapsulado em QFP64 e avaliado em labora-tório nas dependências da NXP Semiconductors Brasil. Outra versão do circuito, em processo CMOS 55 nm, já está em produção, foi caracterizado e qualificado em ambiente automotivo. As medidas em laboratório demonstraram que o novo circuito responde extremamente rápido aos transientes de carga na versão fabricada em tecnologia CMOS 90 nm. Isso o torna apropri-ado para aplicações em microcontroladores (cargas predominantemente digitais). Na versão fabricada em 55 nm, mais de uma centena de peças foram medidas em pro-cesso (split lots) e temperatura e serviram para demonstrar que o circuito pode ser projetado também para aplicações focando baixo consumo energiaAbstract: Modern power management System-on-a-Chip (SoC) design demands for fully integrat-ed solutions in order to decrease certain costly features such as the total chip area and the power consumption while maintaining or increasing the regulator response during aggressive load variations. Low-Dropout (LDO) voltage regulators, as power management devices, must comply with these recent technological and industrial trends. On-chip embedded LDO voltage regulators have to deliver stable and accurate local supply voltages to digital circuits that draw large and fast slew-rate current peaks, characteris-tics that are difficult to implement when off-chip inductors and capacitors are not used. The structure and frequency compensation scheme of classical LDO regulators, especially with low-voltage designs, present a trade-off between stability and transient response of the LDO regulator. To improve load regulation under large and fast load variations in linear regulators, it is necessary to employ large area output drivers. Thus, besides stability issues, another diffi-culty in designing LDOs is to create a compact driver with good load regulation and a fast transient response under large load variations. This manuscript presents a novel topology of a capacitor-free CMOS LDO regulator utilizing a compact NMOS output driver. The new output driver cell achieves low voltage ripple and very fast transient response under large load steps with a small silicone area. The circuit has been implemented in a 90 nm CMOS process technology. Silicon results demonstrated a transient loop response faster than 30 ns to a load variation of four orders of magnitude. Another version of the circuit has been implemented in a 55 nm CMOS technology. Alt-hough primarily targeted to attain low power requirements, this version has been qualified to meet industry standard automotive specifications and is currently in production as part of the Power Management Controller (PMC) block integrated within a family of MCUs used in au-tomotive and industrial powertrainDoutoradoEletrônica, Microeletrônica e OptoeletrônicaDoutor em Engenharia Elétric

    An Exploration of Maximum Power Point Tracking Algorithms

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    This project investigated the performance of various solar maximum power point tracking algorithms on a single hardware platform. It also developed a low-cost hardware platform including a rudimentary solar cell emulator circuit and a maximum power point tracker circuit to test these algorithms. Additionally, the project covered the development of the two software algorithms that were tested in the project: the ”Sweep” algorithm and the ”Perturb and Observe” algorithm

    Power-Efficient and High-Performance Cicruit Techniques for On-Chip Voltage Regulation and Low-Voltage Filtering

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    This dissertation focuses on two projects. The first one is a power supply rejection (PSR) enhanced with fast settling time (TS) bulk-driven feedforward (BDFF) capacitor-less (CL) low-dropout (LDO) regulator. The second project is a high bandwidth (BW) power adjustable low-voltage (LV) active-RC 4th -order Butterworth low pass filter (LPF). As technology improves, faster and more accurate LDOs with high PSR are going to be required for future on-chip applications and systems.The proposed BDFF CL-LDO will accomplish an improved PSR without degrading TS. This would be achieved by injecting supply noise through the pass device’s bulk terminal in order to cancel the supply noise at the output. The supply injection will be achieved by creating a feedforward path, which compared to feedback paths, that doesn’t degrade stability and therefore allows for faster dynamic performance. A high gain control loop would be used to maintain a high accuracy and dc performance, such as line/load regulation. The proposed CL-LDO will target a PSR better than – 90 dB at low frequencies and – 60 dB at 1 MHz for 50 mA of load current (IvL). The CL-LDO will target a loop gain higher than 90 dB, leading to an improved line and load regulation, and unity-gain frequency (UGF) higher than 20 MHz, which will allow a TS faster than 500 ns. The CL-LDO is going to be fabricated in a CMOS 130 nm technology; consume a quiescent current (IQ) of less than 50 μA; for a dropout voltage of 200 mV and an IvL of 50 mA. As technology scales down, speed and performance requirements increase for on-chip communication systems that reflect the current demand for high speed data-oriented applications. However, in small technologies, it becomes harder to achieve high gain and high speed at the same time because the supply voltage (VvDvD) decreases leaving no room for conventional high gain CMOS structures. The proposed active-RC LPF will accomplish a LV high BW operation that would allow such disadvantages to be overcome. The LPF will be implemented using an active RC structure that allows for the high linearity such communication systems demand. In addition, built-in BW and power configurability would address the demands for increased flexibility usually required in such systems. The proposed LV LPF will target a configurable cut-off frequency (ƒо) of 20/40/80/160 MHz with tuning capabilities and power adjustability for each ƒо. The filter will be fabricated in a CMOS 130 nm technology. The filter characteristics are as following: 4th -order, active-RC, LPF, Butterworth response, VDD = 0.6 V, THD higher than 40 dB and a third-order input intercept point (IIP3) higher than 10 dBm

    Mixed-source charger-supply CMOS IC

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    The proposed research objective is to develop, test, and evaluate a mixer and charger-supply CMOS IC that derives and mixes energy and power from mixed sources to accurately supply a miniaturized system. Since the energy-dense source stores more energy than the power-dense source while the latter supplies more power than the former, the proposed research aims to develop an IC that automatically selects how much and from which source to draw power to maximize lifetime per unit volume. Today, the state of the art lacks the intelligence and capability to select the most appropriate source from which to extract power to supply the time-varying needs of a small system. As such, the underlying objective and benefit of this research is to reduce the size of a complete electronic system so that wireless sensors and biomedical implants, for example, as a whole, perform well, operate for extended periods, and integrate into tiny spaces.Ph.D
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