574 research outputs found

    Virtual metrology for plasma etch processes.

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    Plasma processes can present dicult control challenges due to time-varying dynamics and a lack of relevant and/or regular measurements. Virtual metrology (VM) is the use of mathematical models with accessible measurements from an operating process to estimate variables of interest. This thesis addresses the challenge of virtual metrology for plasma processes, with a particular focus on semiconductor plasma etch. Introductory material covering the essentials of plasma physics, plasma etching, plasma measurement techniques, and black-box modelling techniques is rst presented for readers not familiar with these subjects. A comprehensive literature review is then completed to detail the state of the art in modelling and VM research for plasma etch processes. To demonstrate the versatility of VM, a temperature monitoring system utilising a state-space model and Luenberger observer is designed for the variable specic impulse magnetoplasma rocket (VASIMR) engine, a plasma-based space propulsion system. The temperature monitoring system uses optical emission spectroscopy (OES) measurements from the VASIMR engine plasma to correct temperature estimates in the presence of modelling error and inaccurate initial conditions. Temperature estimates within 2% of the real values are achieved using this scheme. An extensive examination of the implementation of a wafer-to-wafer VM scheme to estimate plasma etch rate for an industrial plasma etch process is presented. The VM models estimate etch rate using measurements from the processing tool and a plasma impedance monitor (PIM). A selection of modelling techniques are considered for VM modelling, and Gaussian process regression (GPR) is applied for the rst time for VM of plasma etch rate. Models with global and local scope are compared, and modelling schemes that attempt to cater for the etch process dynamics are proposed. GPR-based windowed models produce the most accurate estimates, achieving mean absolute percentage errors (MAPEs) of approximately 1:15%. The consistency of the results presented suggests that this level of accuracy represents the best accuracy achievable for the plasma etch system at the current frequency of metrology. Finally, a real-time VM and model predictive control (MPC) scheme for control of plasma electron density in an industrial etch chamber is designed and tested. The VM scheme uses PIM measurements to estimate electron density in real time. A predictive functional control (PFC) scheme is implemented to cater for a time delay in the VM system. The controller achieves time constants of less than one second, no overshoot, and excellent disturbance rejection properties. The PFC scheme is further expanded by adapting the internal model in the controller in real time in response to changes in the process operating point

    Doctor of Philosophy

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    dissertationIn order to ensure high production yield of semiconductor devices, it is desirable to characterize intermediate progress towards the final product by using metrology tools to acquire relevant measurements after each sequential processing step. The metrology data are commonly used in feedback and feed-forward loops of Run-to-Run (R2R) controllers to improve process capability and optimize recipes from lot-to-lot or batch-to-batch. In this dissertation, we focus on two related issues. First, we propose a novel non-threaded R2R controller that utilizes all available metrology measurements, even when the data were acquired during prior runs that differed in their contexts from the current fabrication thread. The developed controller is the first known implementation of a non-threaded R2R control strategy that was successfully deployed in the high-volume production semiconductor fab. Its introduction improved the process capability by 8% compared with the traditional threaded R2R control and significantly reduced out of control (OOC) events at one of the most critical steps in NAND memory manufacturing. The second contribution demonstrates the value of developing virtual metrology (VM) estimators using the insight gained from multiphysics models. Unlike the traditional statistical regression techniques, which lead to linear models that depend on a linear combination of the available measurements, we develop VM models, the structure of which and the functional interdependence between their input and output variables are determined from the insight provided by the multiphysics describing the operation of the processing step for which the VM system is being developed. We demonstrate this approach for three different processes, and describe the superior performance of the developed VM systems after their first-of-a-kind deployment in a high-volume semiconductor manufacturing environment

    Virtual metrology for plasma etch processes.

    Get PDF
    Plasma processes can present dicult control challenges due to time-varying dynamics and a lack of relevant and/or regular measurements. Virtual metrology (VM) is the use of mathematical models with accessible measurements from an operating process to estimate variables of interest. This thesis addresses the challenge of virtual metrology for plasma processes, with a particular focus on semiconductor plasma etch. Introductory material covering the essentials of plasma physics, plasma etching, plasma measurement techniques, and black-box modelling techniques is rst presented for readers not familiar with these subjects. A comprehensive literature review is then completed to detail the state of the art in modelling and VM research for plasma etch processes. To demonstrate the versatility of VM, a temperature monitoring system utilising a state-space model and Luenberger observer is designed for the variable specic impulse magnetoplasma rocket (VASIMR) engine, a plasma-based space propulsion system. The temperature monitoring system uses optical emission spectroscopy (OES) measurements from the VASIMR engine plasma to correct temperature estimates in the presence of modelling error and inaccurate initial conditions. Temperature estimates within 2% of the real values are achieved using this scheme. An extensive examination of the implementation of a wafer-to-wafer VM scheme to estimate plasma etch rate for an industrial plasma etch process is presented. The VM models estimate etch rate using measurements from the processing tool and a plasma impedance monitor (PIM). A selection of modelling techniques are considered for VM modelling, and Gaussian process regression (GPR) is applied for the rst time for VM of plasma etch rate. Models with global and local scope are compared, and modelling schemes that attempt to cater for the etch process dynamics are proposed. GPR-based windowed models produce the most accurate estimates, achieving mean absolute percentage errors (MAPEs) of approximately 1:15%. The consistency of the results presented suggests that this level of accuracy represents the best accuracy achievable for the plasma etch system at the current frequency of metrology. Finally, a real-time VM and model predictive control (MPC) scheme for control of plasma electron density in an industrial etch chamber is designed and tested. The VM scheme uses PIM measurements to estimate electron density in real time. A predictive functional control (PFC) scheme is implemented to cater for a time delay in the VM system. The controller achieves time constants of less than one second, no overshoot, and excellent disturbance rejection properties. The PFC scheme is further expanded by adapting the internal model in the controller in real time in response to changes in the process operating point

    Statistical Methods for Semiconductor Manufacturing

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    In this thesis techniques for non-parametric modeling, machine learning, filtering and prediction and run-to-run control for semiconductor manufacturing are described. In particular, algorithms have been developed for two major applications area: - Virtual Metrology (VM) systems; - Predictive Maintenance (PdM) systems. Both technologies have proliferated in the past recent years in the semiconductor industries, called fabs, in order to increment productivity and decrease costs. VM systems aim of predicting quantities on the wafer, the main and basic product of the semiconductor industry, that may be physically measurable or not. These quantities are usually โ€™costlyโ€™ to be measured in economic or temporal terms: the prediction is based on process variables and/or logistic information on the production that, instead, are always available and that can be used for modeling without further costs. PdM systems, on the other hand, aim at predicting when a maintenance action has to be performed. This approach to maintenance management, based like VM on statistical methods and on the availability of process/logistic data, is in contrast with other classical approaches: - Run-to-Failure (R2F), where there are no interventions performed on the machine/process until a new breaking or specification violation happens in the production; - Preventive Maintenance (PvM), where the maintenances are scheduled in advance based on temporal intervals or on production iterations. Both aforementioned approaches are not optimal, because they do not assure that breakings and wasting of wafers will not happen and, in the case of PvM, they may lead to unnecessary maintenances without completely exploiting the lifetime of the machine or of the process. The main goal of this thesis is to prove through several applications and feasibility studies that the use of statistical modeling algorithms and control systems can improve the efficiency, yield and profits of a manufacturing environment like the semiconductor one, where lots of data are recorded and can be employed to build mathematical models. We present several original contributions, both in the form of applications and methods. The introduction of this thesis will be an overview on the semiconductor fabrication process: the most common practices on Advanced Process Control (APC) systems and the major issues for engineers and statisticians working in this area will be presented. Furthermore we will illustrate the methods and mathematical models used in the applications. We will then discuss in details the following applications: - A VM system for the estimation of the thickness deposited on the wafer by the Chemical Vapor Deposition (CVD) process, that exploits Fault Detection and Classification (FDC) data is presented. In this tool a new clustering algorithm based on Information Theory (IT) elements have been proposed. In addition, the Least Angle Regression (LARS) algorithm has been applied for the first time to VM problems. - A new VM module for multi-step (CVD, Etching and Litography) line is proposed, where Multi-Task Learning techniques have been employed. - A new Machine Learning algorithm based on Kernel Methods for the estimation of scalar outputs from time series inputs is illustrated. - Run-to-Run control algorithms that employ both the presence of physical measures and statistical ones (coming from a VM system) is shown; this tool is based on IT elements. - A PdM module based on filtering and prediction techniques (Kalman Filter, Monte Carlo methods) is developed for the prediction of maintenance interventions in the Epitaxy process. - A PdM system based on Elastic Nets for the maintenance predictions in Ion Implantation tool is described. Several of the aforementioned works have been developed in collaborations with major European semiconductor companies in the framework of the European project UE FP7 IMPROVE (Implementing Manufacturing science solutions to increase equiPment pROductiVity and fab pErformance); such collaborations will be specified during the thesis, underlying the practical aspects of the implementation of the proposed technologies in a real industrial environment

    ๋งค๊ฐœ๋ถ„ํฌ๊ทผ์‚ฌ๋ฅผ ํ†ตํ•œ ๊ณต์ •์‹œ์Šคํ…œ ๊ณตํ•™์—์„œ์˜ ํ™•๋ฅ ๊ธฐ๊ณ„ํ•™์Šต ์ ‘๊ทผ๋ฒ•

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    ํ•™์œ„๋…ผ๋ฌธ(๋ฐ•์‚ฌ) -- ์„œ์šธ๋Œ€ํ•™๊ต๋Œ€ํ•™์› : ๊ณต๊ณผ๋Œ€ํ•™ ํ™”ํ•™์ƒ๋ฌผ๊ณตํ•™๋ถ€, 2021.8. ์ด์ข…๋ฏผ.With the rapid development of measurement technology, higher quality and vast amounts of process data become available. Nevertheless, process data are โ€˜scarceโ€™ in many cases as they are sampled only at certain operating conditions while the dimensionality of the system is large. Furthermore, the process data are inherently stochastic due to the internal characteristics of the system or the measurement noises. For this reason, uncertainty is inevitable in process systems, and estimating it becomes a crucial part of engineering tasks as the prediction errors can lead to misguided decisions and cause severe casualties or economic losses. A popular approach to this is applying probabilistic inference techniques that can model the uncertainty in terms of probability. However, most of the existing probabilistic inference techniques are based on recursive sampling, which makes it difficult to use them for industrial applications that require processing a high-dimensional and massive amount of data. To address such an issue, this thesis proposes probabilistic machine learning approaches based on parametric distribution approximation, which can model the uncertainty of the system and circumvent the computational complexity as well. The proposed approach is applied for three major process engineering tasks: process monitoring, system modeling, and process design. First, a process monitoring framework is proposed that utilizes a probabilistic classifier for fault classification. To enhance the accuracy of the classifier and reduce the computational cost for its training, a feature extraction method called probabilistic manifold learning is developed and applied to the process data ahead of the fault classification. We demonstrate that this manifold approximation process not only reduces the dimensionality of the data but also casts the data into a clustered structure, making the classifier have a low dependency on the type and dimension of the data. By exploiting this property, non-metric information (e.g., fault labels) of the data is effectively incorporated and the diagnosis performance is drastically improved. Second, a probabilistic modeling approach based on Bayesian neural networks is proposed. The parameters of deep neural networks are transformed into Gaussian distributions and trained using variational inference. The redundancy of the parameter is autonomously inferred during the model training, and insignificant parameters are eliminated a posteriori. Through a verification study, we demonstrate that the proposed approach can not only produce high-fidelity models that describe the stochastic behaviors of the system but also produce the optimal model structure. Finally, a novel process design framework is proposed based on reinforcement learning. Unlike the conventional optimization methods that recursively evaluate the objective function to find an optimal value, the proposed method approximates the objective function surface by parametric probabilistic distributions. This allows learning the continuous action policy without introducing any cumbersome discretization process. Moreover, the probabilistic policy gives means for effective control of the exploration and exploitation rates according to the certainty information. We demonstrate that the proposed framework can learn process design heuristics during the solution process and use them to solve similar design problems.๊ณ„์ธก๊ธฐ์ˆ ์˜ ๋ฐœ๋‹ฌ๋กœ ์–‘์งˆ์˜, ๊ทธ๋ฆฌ๊ณ  ๋ฐฉ๋Œ€ํ•œ ์–‘์˜ ๊ณต์ • ๋ฐ์ดํ„ฐ์˜ ์ทจ๋“์ด ๊ฐ€๋Šฅํ•ด์กŒ๋‹ค. ๊ทธ๋Ÿฌ๋‚˜ ๋งŽ์€ ๊ฒฝ์šฐ ์‹œ์Šคํ…œ ์ฐจ์›์˜ ํฌ๊ธฐ์— ๋น„ํ•ด์„œ ์ผ๋ถ€ ์šด์ „์กฐ๊ฑด์˜ ๊ณต์ • ๋ฐ์ดํ„ฐ๋งŒ์ด ์ทจ๋“๋˜๊ธฐ ๋•Œ๋ฌธ์—, ๊ณต์ • ๋ฐ์ดํ„ฐ๋Š” โ€˜ํฌ์†Œโ€™ํ•˜๊ฒŒ ๋œ๋‹ค. ๋ฟ๋งŒ ์•„๋‹ˆ๋ผ, ๊ณต์ • ๋ฐ์ดํ„ฐ๋Š” ์‹œ์Šคํ…œ ๊ฑฐ๋™ ์ž์ฒด์™€ ๋”๋ถˆ์–ด ๊ณ„์ธก์—์„œ ๋ฐœ์ƒํ•˜๋Š” ๋…ธ์ด์ฆˆ๋กœ ์ธํ•œ ๋ณธ์งˆ์ ์ธ ํ™•๋ฅ ์  ๊ฑฐ๋™์„ ๋ณด์ธ๋‹ค. ๋”ฐ๋ผ์„œ ์‹œ์Šคํ…œ์˜ ์˜ˆ์ธก๋ชจ๋ธ์€ ์˜ˆ์ธก ๊ฐ’์— ๋Œ€ํ•œ ๋ถˆํ™•์‹ค์„ฑ์„ ์ •๋Ÿ‰์ ์œผ๋กœ ๊ธฐ์ˆ ํ•˜๋Š” ๊ฒƒ์ด ์š”๊ตฌ๋˜๋ฉฐ, ์ด๋ฅผ ํ†ตํ•ด ์˜ค์ง„์„ ์˜ˆ๋ฐฉํ•˜๊ณ  ์ž ์žฌ์  ์ธ๋ช… ํ”ผํ•ด์™€ ๊ฒฝ์ œ์  ์†์‹ค์„ ๋ฐฉ์ง€ํ•  ์ˆ˜ ์žˆ๋‹ค. ์ด์— ๋Œ€ํ•œ ๋ณดํŽธ์ ์ธ ์ ‘๊ทผ๋ฒ•์€ ํ™•๋ฅ ์ถ”์ •๊ธฐ๋ฒ•์„ ์‚ฌ์šฉํ•˜์—ฌ ์ด๋Ÿฌํ•œ ๋ถˆํ™•์‹ค์„ฑ์„ ์ •๋Ÿ‰ํ™” ํ•˜๋Š” ๊ฒƒ์ด๋‚˜, ํ˜„์กดํ•˜๋Š” ์ถ”์ •๊ธฐ๋ฒ•๋“ค์€ ์žฌ๊ท€์  ์ƒ˜ํ”Œ๋ง์— ์˜์กดํ•˜๋Š” ํŠน์„ฑ์ƒ ๊ณ ์ฐจ์›์ด๋ฉด์„œ๋„ ๋‹ค๋Ÿ‰์ธ ๊ณต์ •๋ฐ์ดํ„ฐ์— ์ ์šฉํ•˜๊ธฐ ์–ด๋ ต๋‹ค๋Š” ๊ทผ๋ณธ์ ์ธ ํ•œ๊ณ„๋ฅผ ๊ฐ€์ง„๋‹ค. ๋ณธ ํ•™์œ„๋…ผ๋ฌธ์—์„œ๋Š” ๋งค๊ฐœ๋ถ„ํฌ๊ทผ์‚ฌ์— ๊ธฐ๋ฐ˜ํ•œ ํ™•๋ฅ ๊ธฐ๊ณ„ํ•™์Šต์„ ์ ์šฉํ•˜์—ฌ ์‹œ์Šคํ…œ์— ๋‚ด์žฌ๋œ ๋ถˆํ™•์‹ค์„ฑ์„ ๋ชจ๋ธ๋งํ•˜๋ฉด์„œ๋„ ๋™์‹œ์— ๊ณ„์‚ฐ ํšจ์œจ์ ์ธ ์ ‘๊ทผ ๋ฐฉ๋ฒ•์„ ์ œ์•ˆํ•˜์˜€๋‹ค. ๋จผ์ €, ๊ณต์ •์˜ ๋ชจ๋‹ˆํ„ฐ๋ง์— ์žˆ์–ด ๊ฐ€์šฐ์‹œ์•ˆ ํ˜ผํ•ฉ ๋ชจ๋ธ (Gaussian mixture model)์„ ๋ถ„๋ฅ˜์ž๋กœ ์‚ฌ์šฉํ•˜๋Š” ํ™•๋ฅ ์  ๊ฒฐํ•จ ๋ถ„๋ฅ˜ ํ”„๋ ˆ์ž„์›Œํฌ๊ฐ€ ์ œ์•ˆ๋˜์—ˆ๋‹ค. ์ด๋•Œ ๋ถ„๋ฅ˜์ž์˜ ํ•™์Šต์—์„œ์˜ ๊ณ„์‚ฐ ๋ณต์žก๋„๋ฅผ ์ค„์ด๊ธฐ ์œ„ํ•˜์—ฌ ๋ฐ์ดํ„ฐ๋ฅผ ์ €์ฐจ์›์œผ๋กœ ํˆฌ์˜์‹œํ‚ค๋Š”๋ฐ, ์ด๋ฅผ ์œ„ํ•œ ํ™•๋ฅ ์  ๋‹ค์–‘์ฒด ํ•™์Šต (probabilistic manifold learn-ing) ๋ฐฉ๋ฒ•์ด ์ œ์•ˆ๋˜์—ˆ๋‹ค. ์ œ์•ˆํ•˜๋Š” ๋ฐฉ๋ฒ•์€ ๋ฐ์ดํ„ฐ์˜ ๋‹ค์–‘์ฒด (manifold)๋ฅผ ๊ทผ์‚ฌํ•˜์—ฌ ๋ฐ์ดํ„ฐ ํฌ์ธํŠธ ์‚ฌ์ด์˜ ์Œ๋ณ„ ์šฐ๋„ (pairwise likelihood)๋ฅผ ๋ณด์กดํ•˜๋Š” ํˆฌ์˜๋ฒ•์ด ์‚ฌ์šฉ๋œ๋‹ค. ์ด๋ฅผ ํ†ตํ•˜์—ฌ ๋ฐ์ดํ„ฐ์˜ ์ข…๋ฅ˜์™€ ์ฐจ์›์— ์˜์กด๋„๊ฐ€ ๋‚ฎ์€ ์ง„๋‹จ ๊ฒฐ๊ณผ๋ฅผ ์–ป์Œ๊ณผ ๋™์‹œ์— ๋ฐ์ดํ„ฐ ๋ ˆ์ด๋ธ”๊ณผ ๊ฐ™์€ ๋น„๊ฑฐ๋ฆฌ์  (non-metric) ์ •๋ณด๋ฅผ ํšจ์œจ์ ์œผ๋กœ ์‚ฌ์šฉํ•˜์—ฌ ๊ฒฐํ•จ ์ง„๋‹จ ๋Šฅ๋ ฅ์„ ํ–ฅ์ƒ์‹œํ‚ฌ ์ˆ˜ ์žˆ์Œ์„ ๋ณด์˜€๋‹ค. ๋‘˜์งธ๋กœ, ๋ฒ ์ด์ง€์•ˆ ์‹ฌ์ธต ์‹ ๊ฒฝ๋ง(Bayesian deep neural networks)์„ ์‚ฌ์šฉํ•œ ๊ณต์ •์˜ ํ™•๋ฅ ์  ๋ชจ๋ธ๋ง ๋ฐฉ๋ฒ•๋ก ์ด ์ œ์‹œ๋˜์—ˆ๋‹ค. ์‹ ๊ฒฝ๋ง์˜ ๊ฐ ๋งค๊ฐœ๋ณ€์ˆ˜๋Š” ๊ฐ€์šฐ์Šค ๋ถ„ํฌ๋กœ ์น˜ํ™˜๋˜๋ฉฐ, ๋ณ€๋ถ„์ถ”๋ก  (variational inference)์„ ํ†ตํ•˜์—ฌ ๊ณ„์‚ฐ ํšจ์œจ์ ์ธ ํ›ˆ๋ จ์ด ์ง„ํ–‰๋œ๋‹ค. ํ›ˆ๋ จ์ด ๋๋‚œ ํ›„ ํŒŒ๋ผ๋ฏธํ„ฐ์˜ ์œ ํšจ์„ฑ์„ ์ธก์ •ํ•˜์—ฌ ๋ถˆํ•„์š”ํ•œ ๋งค๊ฐœ๋ณ€์ˆ˜๋ฅผ ์†Œ๊ฑฐํ•˜๋Š” ์‚ฌํ›„ ๋ชจ๋ธ ์••์ถ• ๋ฐฉ๋ฒ•์ด ์‚ฌ์šฉ๋˜์—ˆ๋‹ค. ๋ฐ˜๋„์ฒด ๊ณต์ •์— ๋Œ€ํ•œ ์‚ฌ๋ก€ ์—ฐ๊ตฌ๋Š” ์ œ์•ˆํ•˜๋Š” ๋ฐฉ๋ฒ•์ด ๊ณต์ •์˜ ๋ณต์žกํ•œ ๊ฑฐ๋™์„ ํšจ๊ณผ์ ์œผ๋กœ ๋ชจ๋ธ๋ง ํ•  ๋ฟ๋งŒ ์•„๋‹ˆ๋ผ ๋ชจ๋ธ์˜ ์ตœ์  ๊ตฌ์กฐ๋ฅผ ๋„์ถœํ•  ์ˆ˜ ์žˆ์Œ์„ ๋ณด์—ฌ์ค€๋‹ค. ๋งˆ์ง€๋ง‰์œผ๋กœ, ๋ถ„ํฌํ˜• ์‹ฌ์ธต ์‹ ๊ฒฝ๋ง์„ ์‚ฌ์šฉํ•œ ๊ฐ•ํ™”ํ•™์Šต์„ ๊ธฐ๋ฐ˜์œผ๋กœ ํ•œ ํ™•๋ฅ ์  ๊ณต์ • ์„ค๊ณ„ ํ”„๋ ˆ์ž„์›Œํฌ๊ฐ€ ์ œ์•ˆ๋˜์—ˆ๋‹ค. ์ตœ์ ์น˜๋ฅผ ์ฐพ๊ธฐ ์œ„ํ•ด ์žฌ๊ท€์ ์œผ๋กœ ๋ชฉ์  ํ•จ์ˆ˜ ๊ฐ’์„ ํ‰๊ฐ€ํ•˜๋Š” ๊ธฐ์กด์˜ ์ตœ์ ํ™” ๋ฐฉ๋ฒ•๋ก ๊ณผ ๋‹ฌ๋ฆฌ, ๋ชฉ์  ํ•จ์ˆ˜ ๊ณก๋ฉด (objective function surface)์„ ๋งค๊ฐœํ™” ๋œ ํ™•๋ฅ ๋ถ„ํฌ๋กœ ๊ทผ์‚ฌํ•˜๋Š” ์ ‘๊ทผ๋ฒ•์ด ์ œ์‹œ๋˜์—ˆ๋‹ค. ์ด๋ฅผ ๊ธฐ๋ฐ˜์œผ๋กœ ์ด์‚ฐํ™” (discretization)๋ฅผ ์‚ฌ์šฉํ•˜์ง€ ์•Š๊ณ  ์—ฐ์†์  ํ–‰๋™ ์ •์ฑ…์„ ํ•™์Šตํ•˜๋ฉฐ, ํ™•์‹ค์„ฑ (certainty)์— ๊ธฐ๋ฐ˜ํ•œ ํƒ์ƒ‰ (exploration) ๋ฐ ํ™œ์šฉ (exploi-tation) ๋น„์œจ์˜ ์ œ์–ด๊ฐ€ ํšจ์œจ์ ์œผ๋กœ ์ด๋ฃจ์–ด์ง„๋‹ค. ์‚ฌ๋ก€ ์—ฐ๊ตฌ ๊ฒฐ๊ณผ๋Š” ๊ณต์ •์˜ ์„ค๊ณ„์— ๋Œ€ํ•œ ๊ฒฝํ—˜์ง€์‹ (heuristic)์„ ํ•™์Šตํ•˜๊ณ  ์œ ์‚ฌํ•œ ์„ค๊ณ„ ๋ฌธ์ œ์˜ ํ•ด๋ฅผ ๊ตฌํ•˜๋Š” ๋ฐ ์ด์šฉํ•  ์ˆ˜ ์žˆ์Œ์„ ๋ณด์—ฌ์ค€๋‹ค.Chapter 1 Introduction 1 1.1. Motivation 1 1.2. Outline of the thesis 5 Chapter 2 Backgrounds and preliminaries 9 2.1. Bayesian inference 9 2.2. Monte Carlo 10 2.3. Kullback-Leibler divergence 11 2.4. Variational inference 12 2.5. Riemannian manifold 13 2.6. Finite extended-pseudo-metric space 16 2.7. Reinforcement learning 16 2.8. Directed graph 19 Chapter 3 Process monitoring and fault classification with probabilistic manifold learning 20 3.1. Introduction 20 3.2. Methods 25 3.2.1. Uniform manifold approximation 27 3.2.2. Clusterization 28 3.2.3. Projection 31 3.2.4. Mapping of unknown data query 32 3.2.5. Inference 33 3.3. Verification study 38 3.3.1. Dataset description 38 3.3.2. Experimental setup 40 3.3.3. Process monitoring 43 3.3.4. Projection characteristics 47 3.3.5. Fault diagnosis 50 3.3.6. Computational Aspects 56 Chapter 4 Process system modeling with Bayesian neural networks 59 4.1. Introduction 59 4.2. Methods 63 4.2.1. Long Short-Term Memory (LSTM) 63 4.2.2. Bayesian LSTM (BLSTM) 66 4.3. Verification study 68 4.3.1. System description 68 4.3.2. Estimation of the plasma variables 71 4.3.3. Dataset description 72 4.3.4. Experimental setup 72 4.3.5. Weight regularization during training 78 4.3.6. Modeling complex behaviors of the system 80 4.3.7. Uncertainty quantification and model compression 85 Chapter 5 Process design based on reinforcement learning with distributional actor-critic networks 89 5.1. Introduction 89 5.2. Methods 93 5.2.1. Flowsheet hashing 93 5.2.2. Behavioral cloning 99 5.2.3. Neural Monte Carlo tree search (N-MCTS) 100 5.2.4. Distributional actor-critic networks (DACN) 105 5.2.5. Action masking 110 5.3. Verification study 110 5.3.1. System description 110 5.3.2. Experimental setup 111 5.3.3. Result and discussions 115 Chapter 6 Concluding remarks 120 6.1. Summary of the contributions 120 6.2. Future works 122 Appendix 125 A.1. Proof of Lemma 1 125 A.2. Performance indices for dimension reduction 127 A.3. Model equations for process units 130 Bibliography 132 ์ดˆ ๋ก 149๋ฐ•

    2022 Review of Data-Driven Plasma Science

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    Data-driven science and technology offer transformative tools and methods to science. This review article highlights the latest development and progress in the interdisciplinary field of data-driven plasma science (DDPS), i.e., plasma science whose progress is driven strongly by data and data analyses. Plasma is considered to be the most ubiquitous form of observable matter in the universe. Data associated with plasmas can, therefore, cover extremely large spatial and temporal scales, and often provide essential information for other scientific disciplines. Thanks to the latest technological developments, plasma experiments, observations, and computation now produce a large amount of data that can no longer be analyzed or interpreted manually. This trend now necessitates a highly sophisticated use of high-performance computers for data analyses, making artificial intelligence and machine learning vital components of DDPS. This article contains seven primary sections, in addition to the introduction and summary. Following an overview of fundamental data-driven science, five other sections cover widely studied topics of plasma science and technologies, i.e., basic plasma physics and laboratory experiments, magnetic confinement fusion, inertial confinement fusion and high-energy-density physics, space and astronomical plasmas, and plasma technologies for industrial and other applications. The final section before the summary discusses plasma-related databases that could significantly contribute to DDPS. Each primary section starts with a brief introduction to the topic, discusses the state-of-the-art developments in the use of data and/or data-scientific approaches, and presents the summary and outlook. Despite the recent impressive signs of progress, the DDPS is still in its infancy. This article attempts to offer a broad perspective on the development of this field and identify where further innovations are required

    Unsupervised Feature Extraction Techniques for Plasma Semiconductor Etch Processes

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    As feature sizes on semiconductor chips continue to shrink plasma etching is becoming a more and more critical process in achieving low cost high-volume manufacturing. Due to the highly complex physics of plasma and chemical reactions between plasma species, control of plasma etch processes is one of the most diยฑcult challenges facing the integrated circuit industry. This is largely due to the diยฑculty with monitoring plasmas. Optical Emission Spectroscopy (OES) technology can be used to produce rich plasma chemical information in real time and is increasingly being considered in semiconductor manufacturing for process monitoring and control of plasma etch processes. However, OES data is complex and inherently highly redundant, necessitating the development of advanced algorithms for eยฎective feature extraction. In this thesis, three new unsupervised feature extraction algorithms have been proposed for OES data analysis and the algorithm properties have been explored with the aid of both artiยฏcial and industrial benchmark data sets. The ยฏrst algorithm, AWSPCA (AdaptiveWeighting Sparse Principal Component Analysis), is developed for dimension reduction with respect to variations in the analysed variables. The algorithm gener- ates sparse principle components while retaining orthogonality and grouping correlated variables together. The second algorithm, MSC (Max Separation Clustering), is devel- oped for clustering variables with distinctive patterns and providing eยฎective pattern representation by a small number of representative variables. The third algorithm, SLHC (Single Linkage Hierarchical Clustering), is developed to achieve a complete and detailed visualisation of the correlation between variables and across clusters in an OES data set. The developed algorithms open up opportunities for using OES data for accurate pro- cess control applications. For example, MSC enables the selection of relevant OES variables for better modeling and control of plasma etching processes. SLHC makes it possible to understand and interpret patterns in OES spectra and how they relate to the plasma chemistry. This in turns can help engineers to achieve an in-depth under- standing of underlying plasma processes
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