9 research outputs found

    A 1.2 V and 69 mW 60 GHz Multi-channel Tunable CMOS Receiver Design

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    A multi-channel receiver operating between 56 GHz and 70 GHz for coverage of different 60 GHz bands worldwide is implemented with a 90 nm Complementary Metal-Oxide Semiconductor (CMOS) process. The receiver containing an LNA, a frequency down-conversion mixer and a variable gain amplifier incorporating a band-pass filter is designed and implemented. This integrated receiver is tested at four channels of centre frequencies 58.3 GHz, 60.5 GHz, 62.6 GHz and 64.8 GHz, employing a frequency plan of an 8 GHz-intermediate frequency (IF). The achieved conversion gain by coarse gain control is between 4.8 dB–54.9 dB. The millimeter-wave receiver circuit is biased with a 1.2V supply voltage. The measured power consumption is 69 mW

    Ultra high data rate CMOS front ends

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    The availability of numerous mm-wave frequency bands for wireless communication has motivated the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performing measurements using on-wafer probing at 60 GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitive to the effective length and bending of the interfaces. This paper presents different 60 GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, a Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60 GHZ integrated components and systems in the main stream CMOS technology

    Ultra high data rate CMOS FEs

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    The availability of numerous mm-wave frequency bands for wireless communication has motived the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performaning measurements using on-wafer probing at 60GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitiv to the effective length and bending of the interfaces. This paper presents different 60GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, A Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60GHZ integrated components and systems in the main stream CMOS technology

    Design methods for 60GHz beamformers in CMOS

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    The 60GHz band is promising for applications such as high-speed short-range wireless personal-area network (WPAN), real-time video streaming at rates of several-Gbps, automotive radar, and mm-Wave imaging, since it provides a large amount of bandwidth that can freely (i.e. without a license) be used worldwide. However, transceivers at 60GHz pose several additional challenges over microwave transceivers. In addition to the circuit design challenges of implementing high performance 60GHz RF circuits in mainstream CMOS technology, the path loss at 60GHz is significantly higher than at microwave frequencies because of the smaller size of isotropic antennas. This can be overcome by using phased array technology. This thesis studies the new concepts and design techniques that can be used for 60GHz phased array systems. It starts with an overview of various applications at mm-wave frequencies, such as multi-Gbps radio at 60GHz, automotive radar and millimeter-wave imaging. System considerations of mm-wave receivers and transmitters are discussed, followed by the selection of a CMOS technology to implement millimeter-wave (60GHz) systems. The link budget of a 60GHz WPAN is analyzed, which leads to the introduction of phased array techniques to improve system performance. Different phased array architectures are studied and compared. The system requirements of phase shifters are discussed. Several types of conventional RF phase shifters are reviewed. A 60GHz 4-bit passive phase shifter is designed and implemented in a 65nm CMOS technology. Measurement results are presented and compared to published prior art. A 60GHz 4-bit active phase shifter is designed and integrated with low noise amplifier and combiner for a phased array receiver. This is implemented in a 65nm CMOS technology, and the measurement results are presented. The design of a 60GHz 4-bit active phase shifter and its integration with power amplifier is also presented for a phased array transmitter. This is implemented in a 65nm CMOS technology. The measurement results are also presented and compared to reported prior art. The integration of a 60GHz CMOS amplifier and an antenna in a printed circuit-board (PCB) package is investigated. Experimental results are presented and discussed

    Power-efficient high-speed interface circuit techniques

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    Inter- and intra-chip connections have become the new challenge to enable the scaling of computing systems, ranging from mobile devices to high-end servers. Demand for aggregate I/O bandwidth has been driven by applications including high-speed ethernet, backplane micro-servers, memory, graphics, chip-to-chip and network onchip. I/O circuitry is becoming the major power consumer in SoC processors and memories as the increasing bandwidth demands larger per-pin data rate or larger I/O pin count per component. The aggregate I/O bandwidth has approximately doubled every three to four years across a diverse range of standards in different applications. However, in order to keep pace with these standards enabled in part by process-technology scaling, we will require more than just device scaling in the near future. New energy-efficient circuit techniques must be proposed to enable the next generations of handheld and high-performance computers, given the thermal and system-power limits they start facing. ^ In this work, we are proposing circuit architectures that improve energy efficiency without decreasing speed performance for the most power hungry circuits in high speed interfaces. By the introduction of a new kind of logic operators in CMOS, called implication operators, we implemented a new family of high-speed frequency dividers/prescalers with reduced footprint and power consumption. New techniques and circuits for clock distribution, for pre-emphasis and for driver at the transmitter side of the I/O circuitry have been proposed and implemented. At the receiver side, new DFE architecture and CDR have been proposed and have been proven experimentally

    KEY FRONT-END CIRCUITS IN MILLIMETER-WAVE SILICON-BASED WIRELESS TRANSMITTERS FOR PHASED-ARRAY APPLICATIONS

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    Millimeter-wave (mm-Wave) phased arrays have been widely used in numerous wireless systems to perform beam forming and spatial filtering that can enhance the equivalent isotropically radiated power (EIRP) for the transmitter (TX). Regarding the existing phased-array architectures, an mm-Wave transmitter includes several building blocks to perform the desired delivered power and phases for wireless communication. Power amplifier (PA) is the most important building block. It needs to offer several advantages, e.g., high efficiency, broadband operation and high linearity. With the recent escalation of interest in 5G wireless communication technologies, mm-Wave transceivers at the 5G frequency bands (e.g., 28 GHz, 37 GHz, 39 GHz, and 60 GHz) have become an important topic in both academia and industry. Thus, PA design is a critical obstacle due to the challenges associated with implementing wideband, highly efficient and highly linear PAs at mm-Wave frequencies. In this dissertation, we present several PA design innovations to address the aforementioned challenges. Additionally, phase shifter (PS) also plays a key role in a phased-array system, since it governs the beam forming quality and steering capabilities. A high-performance phase shifter should achieve a low insertion loss, a wide phase shifting range, dense phase shift angles, and good input/output matching.Ph.D

    Characterization of process variability and robust optimization of analog circuits

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    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.Includes bibliographical references (p. 161-174).Continuous scaling of CMOS technology has enabled dramatic performance enhancement of CMOS devices and has provided speed, power, and density improvement in both digital and analog circuits. CMOS millimeter-wave applications operating at more than 50GHz frequencies has become viable in sub-100nm CMOS technologies, providing advantages in cost and high density integration compared to other heterogeneous technologies such as SiGe and III-V compound semiconductors. However, as the operating frequency of CMOS circuits increases, it becomes more difficult to obtain sufficiently wide operating ranges for robust operation in essential analog building blocks such as voltage-controlled oscillators (VCOs) and frequency dividers. The fluctuations of circuit parameters caused by the random and systematic variations in key manufacturing steps become more significant in nano-scale technologies. The process variation of circuit performance is quickly becoming one of the main concerns in high performance analog design. In this thesis, we show design and analysis of a VCO and frequency divider operating beyond 70GHz in a 65nm SOI CMOS technology. The VCO and frequency divider employ design techniques enlarging frequency operating ranges to improve the robustness of circuit operation. Circuit performance is measured from a number of die samples to identify the statistical properties of performance variation. A back-propagation of variation (BPV) scheme based on sensitivity analysis of circuit performance is proposed to extract critical circuit parameter variation using statistical measurement results of the frequency divider. We analyze functional failure caused by performance variability, and propose dynamic and static optimization methods to improve parametric yield. An external bias control is utilized to dynamically tune the divider operating range and to compensate for performance variation. A novel time delay model of a differential CML buffer is proposed to functionally approximate the maximum operating frequency of the frequency divider, which dramatically reduces computational cost of parametric yield estimation. The functional approximation enables the optimization of the VCO and frequency divider parametric yield with a reasonable amount of simulation time.by Daihyun Lim.Ph.D

    Design of Frequency divider with voltage vontrolled oscillator for 60 GHz low power phase-locked loops in 65 nm RF CMOS

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    Increasing memory capacity in mobile devices, is driving the need of high-data rates equipment. The 7 GHz band around 60 GHz provides the opportunity for multi-gigabit/sec wireless communication. It is a real opportunity for developing next generation of High-Definition (HD) devices. In the last two decades there was a great proliferation of Voltage Controlled Oscillator (VCO) and Frequency Divider (FD) topologies in RF ICs on silicon, but reaching high performance VCOs and FDs operating at 60 GHz is in today's technology a great challenge. A key reason is the inaccuracy of CMOS active and passive device models at mm-W. Three critical issues still constitute research objectives at 60 GHz in CMOS: generation of the Local Oscillator (LO) signal (1), division of the LO signal for the Phase-Locked Loop (PLL) closed loop (2) and distribution of the LO signal (3). In this Thesis, all those three critical issues are addressed and experimentally faced-up: a divide-by-2 FD for a PLL of a direct-conversion transceiver operating at mm-W frequencies in 65 nm RF CMOS technology has been designed. Critical issues such as Process, Voltage and Temperature (PVT) variations, Electromagnetic (EM) simulations and power consumption are addressed to select and design a FD with high frequency dividing range. A 60 GHz VCO is co-designed and integrated in the same die, in order to provide the FD with mm-W input signal. VCOs and FDs play critical roles in the PLL. Both of them constitute the PLL core components and they would need co-design, having a big impact in the overall performance especially because they work at the highest frequency in the PLL. Injection Locking FD (ILFD) has been chosen as the optimum FD topology to be inserted in the control loop of mm-W PLL for direct-conversion transceiver, due to the high speed requirements and the power consumption constraint. The drawback of such topology is the limited bandwidth, resulting in narrow Locking Range (LR) for WirelessHDTM applications considering the impact of PVT variations. A simulation methodology is presented in order to analyze the ILFD locking state, proposing a first divide-by-2 ILFD design with continuous tuning. In order to design a wide LR, low power consumption ILFD, the impacts of various alternatives of low/high Q tank and injection scheme are deeply analysed, since the ILFD locking range depends on the Q of the tank and injection efficiency. The proposed 3-bit dual-mixing 60 GHz divide-by-2 LC-ILFD is designed with an accumulation of switching varactors binary scaled to compensate PVT variations. It is integrated in the same die with a 4-bit 60 GHz LC-VCO. The overall circuit is designed to allow measurements of the singles blocks stand-alone and working together. The co-layout is carried on with the EM modelling process of passives devices, parasitics and transmission lines extracted from the layout. The inductors models provided by the foundry are qualified up to 40 GHz, therefore the EM analysis is a must for post-layout simulation. The PVT variations have been simulated before manufacturing and, based on the results achieved, a PLL scheme PVT robust, considering frequency calibration, has been patented. The test chip has been measured in the CEA-Leti (Grenoble) during a stay of one week. The operation principle and the optimization trade-offs among power consumption, and locking ranges of the final selected ILFD topology have been demonstrated. Even if the experimental results are not completely in agreement with the simulations, due to modelling error and inaccuracy, the proposed technique has been validated with post-measurement simulations. As demonstrated, the locking range of a low-power, discrete tuned divide-by-2 ILFD can be enhanced by increasing the injection efficiency, without the drawbacks of higher power consumption and chip area. A 4-bits wide tuning range LC-VCO for mm-W applications has been co-designed using the selected 65 nm CMOS process.Postprint (published version

    Conception et Ă©tude d’une synthĂšse de frĂ©quence innovante en technologies CMOS avancĂ©es pour les applications en bande de frĂ©quence millimĂ©trique

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    The 60-GHz unlicensed band is a promising alternative to perform the high data rate required in the next generation of wireless communication systems. Complex modulations such as OFDM or 64-QAM allow reaching multi-gigabits per second throughput over up to several tens of meters in standard CMOS technologies. This performance rely on the use of high performance millimeter-wave frequency synthesizer in the RF front-end. In this work, an original architecture is proposed to generate this high performance millimeter-wave frequency synthesizer. It is based on a high order (several tens) multiplication of a low frequency reference (few GHz), that is capable of copying the low frequency reference spectral properties. This high order frequency multiplication is performed in two steps. Firstly, a multi-harmonic signal which power is located around the harmonic of interest is generated from the low frequency reference signal. Secondly, the harmonic of interest is filtered out from this multi-harmonic signal. Both steps rely on the specific use of oscillators. This work deals with the circuit design on advanced CMOS technologies (40 nm CMOS, 55 nm BiCMOS) for the proof of concept and on the theoretical study of this system. This novel technique is experimentally validated by measurements on the fabricated circuits and exhibit state-of-the-art performance. The analytical study of this high order frequency multiplication led to the discovery of a particular kind of synchronization in oscillators and to approximated solutions of the Van der Pol equation in two different practical cases. The perspectives of this work include the design of the low frequency reference and the integration of this frequency synthesizer in a complete RF front-end architecture.La bande de frĂ©quence non-licensĂ©e autour de 60 GHz est une alternative prometteuse pour couvrir les besoins en bande passante des futurs systĂšmes de communication. L'utilisation de modulations complexes (comme OFDM ou 64-QAM) Ă  ces frĂ©quences permet d'atteindre, en utilisant une technologie CMOS standard, des dĂ©bits de plusieurs gigabits par seconde sur quelques mĂštres voire quelques dizaines de mĂštres. Pour atteindre ces performances, la tĂȘte d'Ă©mission-rĂ©ception RF (front-end RF) doit ĂȘtre dotĂ©e d'une rĂ©fĂ©rence de frĂ©quence haute performance. Dans ce travail, une architecture originale est proposĂ©e pour gĂ©nĂ©rer cette rĂ©fĂ©rence de frĂ©quence haute performance. Elle repose sur la multiplication de frĂ©quence d'ordre Ă©levĂ© (plusieurs dizaines) d'un signal de rĂ©fĂ©rence basse frĂ©quence (moins de quelques GHz), tout en recopiant les propriĂ©tĂ©s spectrales du signal basse frĂ©quence. Cette multiplication est rĂ©alisĂ©e en combinant la production d'un signal multi-harmonique dont la puissance est concentrĂ©e autour de la frĂ©quence Ă  synthĂ©tiser. L'harmonique d'intĂ©rĂȘt est ensuite extraite au moyen d'un filtrage. Ces deux Ă©tapes reposent sur l'utilisation d'oscillateurs dans des configurations spĂ©cifiques. Ce travail porte Ă  la fois sur la mise en Ă©quation et l'Ă©tude du fonctionnement de ce systĂšme, et sur la conception de circuits dans des technologies CMOS avancĂ©es (CMOS 40 nm, BiCMOS 55 nm). Les mesures sur les circuits fabriquĂ©s permettent de valider la preuve de concept ainsi que de montrer des performances Ă  l'Ă©tat de l'art. L'Ă©tude du fonctionnement de ce systĂšme a conduit Ă  la dĂ©couverte d'une forme particuliĂšre de synchronisation des oscillateurs ainsi qu'Ă  l'expression de solutions approchĂ©es de l'Ă©quation de Van der Pol dans deux cas pratiques particuliers. Les perspectives de ce travail sont notamment l'intĂ©gration de cette synthĂšse innovante dans un Ă©metteur-rĂ©cepteur complet
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