Low-power and high-performance SRAM design in high variability advanced CMOS technology

As process technologies shrink, the size and number of memories on a chip are exponentially increasing. Embedded SRAMs are a critical component in modern digital systems, and they strongly impact the overall power, performance, and area. To promote memory-related research in academia, this dissertation introduces OpenRAM, a flexible, portable and open-source memory compiler and characterization methodology for generating and verifying memory designs across different technologies.In addition, SRAM designs, focusing on improving power consumption, access time and bitcell stability are explored in high variability advanced CMOS technologies. To have a stable read/write operation for SRAM in high variability process nodes, a differential-ended single-port 8T bitcell is proposed that improves the read noise margin, write noise margin and readout bitcell current by 45%, 48% and 21%, respectively, compared to a conventional 6T bitcell. Also, a differential-ended single-port 12T bitcell for subthreshold operation is proposed that solves the half-select disturbance and allows efficient bit-interleaving. 12T bitcell has a leakage control mechanism which helps to reduce the power consumption and provides operation down to 0.3 V. Both 8T and 12T bitcells are analyzed in a 64 kb SRAM array using 32 nm technology. Besides, to further improve the access time and power consumption, two tracking circuits (multi replica bitline delay and reconfigurable replica bitline delay techniques) are proposed to aid the generation of accurate and optimum sense amplifier set time.An error tolerant SRAM architecture suitable for low voltage video application with dynamic power-quality management is also proposed in this dissertation. This memory uses three power supplies to improve the SRAM stability in low voltages. The proposed triple-supply approach achieves 63% improvement in image quality and 69% reduction in power consumption compared to a single-supply 64 kb SRAM array at 0.70 V

Subthreshold SRAM Design for Energy Efficient Applications in Nanometric CMOS Technologies

Embedded SRAM circuits are vital components in a modern system on chip (SOC) that can occupy up to 90% of the total area. Therefore, SRAM circuits heavily affect SOC performance, reliability, and yield. In addition, most of the SRAM bitcells are in standby mode and significantly contribute to the total leakage current and leakage power consumption. The aggressive demand in portable devices and billions of connected sensor networks requires long battery life. Therefore, careful design of SRAM circuits with minimal power consumption is in high demand. Reducing the power consumption is mainly achieved by reducing the power supply voltage in the idle mode. However, simply reducing the supply voltage imposes practical limitations on SRAM circuits such as reduced static noise margin, poor write margin, reduced number of cells per bitline, and reduced bitline sensing margin that might cause read/write failures. In addition, the SRAM bitcell has contradictory requirements for read stability and writability. Improving the read stability can cause difficulties in a write operation or vice versa. In this thesis, various techniques for designing subthreshold energy-efficient SRAM circuits are proposed. The proposed techniques include improvement in read margin and write margin, speed improvement, energy consumption reduction, new bitcell architecture and utilizing programmable wordline boosting. A programmable wordline boosting technique is exploited on a conventional 6T SRAM bitcell to improve the operational speed. In addition, wordline boosting can reduce the supply voltage while maintaining the operational frequency. The reduction of the supply voltage allows the memory macro to operate with reduced power consumption. To verify the design, a 16-kb SRAM was fabricated using the TSMC 65 nm CMOS technology. Measurement results show that the maximum operational frequency increases up to 33.3% when wordline boosting is applied. Besides, the supply voltage can be reduced while maintaining the same frequency. This allows reducing the energy consumption to be reduced by 22.2%. The minimum energy consumption achieved is 0.536 fJ/b at 400 mV. Moreover, to improve the read margin, a 6T bitcell SRAM with a PMOS access transistor is proposed. Utilizing a PMOS access transistor results in lower zero level degradation, and hence higher read stability. In addition, the access transistor connected to the internal node holding V DD acts as a stabilizer and counterbalances the effect of zero level degradation. In order to improve the writability, wordline boosting is exploited. Wordline boosting also helps to compensate for the lower speed of the PMOS access transistor compared to a NMOS transistor. To verify our design, a 2kb SRAM is fabricated in the TSMC 65 nm CMOS technology. Measurement results show that the maximum operating frequency of the test chip is at 3.34 MHz at 290 mV. The minimum energy consumption is measured as 1.1 fJ/b at 400 mV

INVENT OF BITLINE WITH SRAM NETWORK FIN FET EXPERTISE FOR LOW VOLTAGE MANOEUVRE

In this one study, the downside of your average-8T SRAM construction in accordance with a sophisticated mechanization is analyzed, in addition to a proper SRAM building which triumph overs that shortcoming is expected. However, in terms of an average-8T SRAM in keeping with a sophisticated mechanization, akin to a 22-nm Fin FET robotics, spot the variation in brink intensity is giant, the boosted WL electricity can't be nearly new since it degrades the deliver security of one's SRAM. Thus, a generous-swing resident BL can't be achieved, and the ouster of one's announce intermediary can't be herded separately adequate deliver electricity (VDD), leading to a far large deliver postpone. To conquer reproduction detriment, during this card, a quality SRAM style having an adequate-swing resident BL is expected. In the expected SRAM building, the passage of your character BL is ensured by way of cross-coupled PMOSs, and dispossession of one's hold cushion got to by a generous VDD, left out the desire for the boosted WL intensity. Various configurations of your planned SRAM style, whatever shops more than one bit, are analyzed in items of one's dab operational heat and also area per bit. It ought to be acclaimed that fact the scheduled quality SRAM construction can unravel the half-select issue left out the desire for any write-back strategy, and it exhibits a competing neighbourhood; it more exhibits a broad-swing native bit line that one enables a noticeably lower utter postpone than which of average-8T SRAM construction

Supply Voltage Dependence of Heavy Ion Induced SEEs on 65nm CMOS Bulk SRAMs

The power consumption of Static Random Access Memory (SRAM) has become an important issue for modern integrated circuit design, considering the fact that they occupy large area and consume significant portion of power consumption in modern nanometer chips. SRAM operating in low power supply voltages has become an effective approach in reducing power consumption. Therefore, it is essential to experimentally characterize the single event effects (SEE) of hardened and unhardened SRAM cells to determine their appropriate applications, especially when a low supply voltage is preferred. In this thesis, a SRAM test chip was designed and fabricated with four cell arrays sharing the same peripheral circuits, including two types of unhardened cells (standard 6T and sub-threshold 10T) and two types of hardened cells (Quatro and DICE). The systems for functional and radiation tests were built up with power supply voltages that ranged from near threshold 0.4 V to normal supply 1 V. The test chip was irradiated with alpha particles and heavy ions with various linear energy transfers (LETs) at different core supply voltages, ranging from 1 V to 0.4 V. Experimental results of the alpha test and heavy ion test were consistent with the results of the simulation. The cross sections of 6T and 10T cells present much more significant sensitivities than Quatro and DICE cells for all tested supply voltages and LET. The 10T cell demonstrates a more optimal radiation performance than the 6T cell when LET is small (0.44 MeV·cm2/mg), yet no significant advantage is evident when LET is larger than this. In regards to the Quatro and DICE cells, one does not consistently show superior performance over the other in terms of soft error rates (SERs). Multi-bit upsets (MBUs) occupy a larger portion of total SEUs in DICE cell when relatively larger LET and smaller supply voltage are applied. It explains the loss in radiation tolerance competition with Quatro cell when LET is bigger than 9.1 MeV·cm2/mg and supply voltage is smaller than 0.6 V. In addition, the analysis of test results also demonstrated that the error amount distributions follow a Poisson distribution very well for each type of cell array

Low-Power High-Performance Ternary Content Addressable Memory Circuits

Ternary content addressable memories (TCAMs) are hardware-based parallel lookup tables with bit-level masking capability. They are attractive for applications such as packet forwarding and classification in network routers. Despite the attractive features of TCAMs, high power consumption is one of the most critical challenges faced by TCAM designers. This work proposes circuit techniques for reducing TCAM power consumption. The main contribution of this work is divided in two parts: (i) reduction in match line (ML) sensing energy, and (ii) static-power reduction techniques. The ML sensing energy is reduced by employing (i) positive-feedback ML sense amplifiers (MLSAs), (ii) low-capacitance comparison logic, and (iii) low-power ML-segmentation techniques. The positive-feedback MLSAs include both resistive and active feedback to reduce the ML sensing energy. A body-bias technique can further improve the feedback action at the expense of additional area and ML capacitance. The measurement results of the active-feedback MLSA show 50-56% reduction in ML sensing energy. The measurement results of the proposed low-capacitance comparison logic show 25% and 42% reductions in ML sensing energy and time, respectively, which can further be improved by careful layout. The low-power ML-segmentation techniques include dual ML TCAM and charge-shared ML. Simulation results of the dual ML TCAM that connects two sides of the comparison logic to two ML segments for sequential sensing show 43% power savings for a small (4%) trade-off in the search speed. The charge-shared ML scheme achieves power savings by partial recycling of the charge stored in the first ML segment. Chip measurement results show that the charge-shared ML scheme results in 11% and 9% reductions in ML sensing time and energy, respectively, which can be improved to 19-25% by using a digitally controlled charge sharing time-window and a slightly modified MLSA. The static power reduction is achieved by a dual-VDD technique and low-leakage TCAM cells. The dual-VDD technique trades-off the excess noise margin of MLSA for smaller cell leakage by applying a smaller VDD to TCAM cells and a larger VDD to the peripheral circuits. The low-leakage TCAM cells trade off the speed of READ and WRITE operations for smaller cell area and leakage. Finally, design and testing of a complete TCAM chip are presented, and compared with other published designs

IMPROVED SPEED LOW POWER AND LOW VOLTAGE SRAM DESIGN FOR LDPC APPLICATION CIRCUITS

The design of SRAM has evolved to suffice the need of the industry in terms of speed, power dissipation and other parameters. This paper proposed a SRAM design and an attempt has been made to design circuits using dynamic logic and pass transistor logic to obtain better performance in terms of speed, power dissipation and throughput. The dynamic logic would maintain voltage degradation by using the PMOS and NMOS transistor just as the CMOS logic, even though the design cell uses majority NMOS transistors. The proposed circuits are simulated using BSIM for different CMOS feature sizes of 70 nm, 90 nm, 120 nm and 180 nm. The results obtained have been analysed and shows that the proposed circuit of 8T performs much better as compared to other circuit configurations. There is significant improvement in power dissipation by 99.64 %, delay by 99.9 %, throughput of 490 Mbps and power delay product of 99.96 %

Effects of cosmic rays on single event upsets

Assistance was provided to the Brookhaven Single Event Upset (SEU) Test Facility. Computer codes were developed for fragmentation and secondary radiation affecting Very Large Scale Integration (VLSI) in space. A computer controlled CV (HP4192) test was developed for Terman analysis. Also developed were high speed parametric tests which are independent of operator judgment and a charge pumping technique for measurement of D(sub it) (E). The X-ray secondary effects, and parametric degradation as a function of dose rate were simulated. The SPICE simulation of static RAMs with various resistor filters was tested

Low-Power Soft-Error-Robust Embedded SRAM

Soft errors are radiation-induced ionization events (induced by energetic particles like alpha particles, cosmic neutron, etc.) that cause transient errors in integrated circuits. The circuit can always recover from such errors as the underlying semiconductor material is not damaged and hence, they are called soft errors. In nanometer technologies, the reduced node capacitance and supply voltage coupled with high packing density and lack of masking mechanisms are primarily responsible for the increased susceptibility of SRAMs towards soft errors. Coupled with these are the process variations (effective length, width, and threshold voltage), which are prominent in scaled-down technologies. Typically, SRAM constitutes up to 90% of the die in microprocessors and SoCs (System-on-Chip). Hence, the soft errors in SRAMs pose a potential threat to the reliable operation of the system. In this work, a soft-error-robust eight-transistor SRAM cell (8T) is proposed to establish a balance between low power consumption and soft error robustness. Using metrics like access time, leakage power, and sensitivity to single event transients (SET), the proposed approach is evaluated. For the purpose of analysis and comparisons the results of 8T cell are compared with a standard 6T SRAM cell and the state-of-the-art soft-error-robust SRAM cells. Based on simulation results in a 65-nm commercial CMOS process, the 8T cell demonstrates higher immunity to SETs along with smaller area and comparable leakage power. A 32-kb array of 8T cells was fabricated in silicon. After functional verification of the test chip, a radiation test was conducted to evaluate the soft error robustness. As SRAM cells are scaled aggressively to increase the overall packing density, the smaller transistors exhibit higher degrees of process variation and mismatch, leading to larger offset voltages. For SRAM sense amplifiers, higher offset voltages lead to an increased likelihood of an incorrect decision. To address this issue, a sense amplifier capable of cancelling the input offset voltage is presented. The simulated and measured results in 180-nm technology show that the sense amplifier is capable of detecting a 4 mV differential input signal under dc and transient conditions. The proposed sense amplifier, when compared with a conventional sense amplifier, has a similar die area and a greatly reduced offset voltage. Additionally, a dual-input sense amplifier architecture is proposed with corroborating silicon results to show that it requires smaller differential input to evaluate correctly.1 yea