Integrated Circuit Design in US High-Energy Physics

This whitepaper summarizes the status, plans, and challenges in the area of integrated circuit design in the United States for future High Energy Physics (HEP) experiments. It has been submitted to CPAD (Coordinating Panel for Advanced Detectors) and the HEP Community Summer Study 2013(Snowmass on the Mississippi) held in Minnesota July 29 to August 6, 2013. A workshop titled: US Workshop on IC Design for High Energy Physics, HEPIC2013 was held May 30 to June 1, 2013 at Lawrence Berkeley National Laboratory (LBNL). A draft of the whitepaper was distributed to the attendees before the workshop, the content was discussed at the meeting, and this document is the resulting final product. The scope of the whitepaper includes the following topics: Needs for IC technologies to enable future experiments in the three HEP frontiers Energy, Cosmic and Intensity Frontiers; Challenges in the different technology and circuit design areas and the related R&D needs; Motivation for using different fabrication technologies; Outlook of future technologies including 2.5D and 3D; Survey of ICs used in current experiments and ICs targeted for approved or proposed experiments; IC design at US institutes and recommendations for collaboration in the future

Power efficient analog-to-digital converters using both voltage and time domain information

As advanced wired and wireless communication systems attempt to achieve higher performance, the demand for high resolution and wide signal bandwidth in their associated ADCs is strongly increased. Recently, time-domain quantization has drawn attention from its scalability in deep submicron CMOS processes. Furthermore, there are several interesting aspects of time-domain quantizer by processing the signal in time rather than only in voltage domain especially for power efficiency. This research focuses on developing a new architecture for power efficient, high resolution ADCs using both voltage and time domain information. As a first approach, a new ΔƩ ADC based on a noise-shaped two-step integrating quantizer which quantizes the signal in voltage and time domains is presented. Attaining an extra order of noise-shaping from the integrating quantizer, the proposed ΔƩ ADC manifests a second-order noise-shaping with a first-order loop filter. Furthermore, this quantizer provides an 8b uantization in itself, drastically reducing the oversampling requirement. The proposed ADC also incorporates a new feedback DAC topology that alleviates the feedback DAC complexity of a two-step 8b quantizer. The measured results of the prototype ADC implemented in a 0.13μm CMOS demonstrate peak SNDR of 70.7dB (11.5b ENOB) at 8.1mW power, with an 8x OSR at 80MHz sampling frequency. To further improve ADC performance, a Nyquist ADC based on a time-based pipelined TDC is also proposed as a second approach. In this work, a simple V-T conversion scheme with a cheap low gain amplifier in its first stage and a hybrid time-domain quantization stage based on simple charge pump and capacitive DAC in its backend stages, are also proposed to improve ADC linearity and power efficiency. Using voltage and time domain information, the proposed ADC architecture is beneficial for both resolution and power efficiency, with MSBs resolved in voltage domain and LSBs in time domain. The measured results of the prototype ADC implemented in a 0.13μm CMOS demonstrate peak SNDR of 69.3dB (11.2b ENOB) at 6.38mW power and 70MHz sampling frequency. The FOM is 38.2fJ/conversion-step

Low-power high-performance SAR ADC with redundancy and digital background calibration

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.Cataloged from student-submitted PDF version of thesis.Includes bibliographical references (p. 195-199).As technology scales, the improved speed and energy eciency make the successive- approximation-register (SAR) architecture an attractive alternative for applications that require high-speed and high-accuracy analog-to-digital converters (ADCs). In SAR ADCs, the key linearity and speed limiting factors are capacitor mismatch and incomplete digital-to-analog converter (DAC)/reference voltage settling. In this the- sis, a sub-radix-2 SAR ADC is presented with several new contributions. The main contributions include investigation of using digital error correction (redundancy) in SAR ADCs for dynamic error correction and speed improvement, development of two new calibration algorithms to digitally correct for manufacturing mismatches, design of new architecture to incorporate redundancy within the architecture itself while achieving 94% better energy eciency compared to conventional switching algorithm, development of a new capacitor DAC structure to improve the SNR by four times with improved matching, joint design of the analog and digital circuits to create an asynchronous platform in order to reach the targeted performance, and analysis of key circuit blocks to enable the design to meet noise, power and timing requirements. The design is fabricated in standard 1P9M 65nm CMOS technology with 1.2V supply. The active die area is 0.083mm² with full rail-to-rail input swing of 2.4V p-p . A 67.4dB SNDR, 78.1dB SFDR, +1.0/-0.9 LSB₁₂ INL and +0.5/-0.7 LSB₁₂ DNL are achieved at 50MS/s at Nyquist rate. The total power consumption, including the estimated calibration and reference power, is 2.1mW, corresponding to 21.9fJ/conv.- step FoM. This ADC achieves the best FoM of any ADCs with greater than 10b ENOB and 10MS/s sampling rate.by Albert Hsu Ting Chang.Ph.D

Time interleaved counter analog to digital converters

The work explores extending time interleaving in A/D converters, by applying a high-level of parallelism to one of the slowest and simplest types of data-converters, the counter ADC. The motivation for the work is to realise high-performance re-configurable A/D converters for use in multi-standard and multi-PHY communication receivers with signal bandwidths in the 10s to 100s of MHz. The counter ADC requires only a comparator, a ramp signal, and a digital counter, where the comparator compares the sampled input against all possible quantisation levels sequentially. This work explores arranging counter ADCs in large time-interleaved arrays, building a Time Interleaved Counter (TIC) ADC. The key to realising a TIC ADC is distributed sampling and a global multi-phase ramp generator realised with a novel figure-of-8 rotating resistor ring. Furthermore Counter ADCs allow for re-configurability between effective sampling rate and resolution due to their sequential comparison of reference levels in conversion. A prototype TIC ADC of 128-channels was fabricated and measured in 0.13μm CMOS technology, where the same block can be configured to operate as a 7-bit 1GS/s, 8-bit 500MS/s, or 9-bit 250MS/s dataconverter. The ADC achieves a sub 400fJ/step FOM in all modes of configuration

Design Techniques for High-Performance SAR A/D Converters

The design of electronics needs to account for the non-ideal characteristics of the device technologies used to realize practical circuits. This is particularly important in mixed analog-digital design since the best device technologies are very different for digital compared to analog circuits. One solution for this problem is to use a calibration correction approach to remove the errors introduced by devices, but this adds complexity and power dissipation, as well as reducing operation speed, and so must be optimised. This thesis addresses such an approach to improve the performance of certain types of analog-to-digital converter (ADC) used in advanced telecommunications, where speed, accuracy and power dissipation currently limit applications. The thesis specifically focuses on the design of compensation circuits for use in successive approximation register (SAR) ADCs. ADCs are crucial building blocks in communication systems, in general, and for mobile networks, in particular. The recently launched fifth generation of mobile networks (5G) has required new ADC circuit techniques to meet the higher speed and lower power dissipation requirements for 5G technology. The SAR has become one of the most favoured architectures for designing high-performance ADCs, but the successive nature of the circuit operation makes it difficult to reach ∼GS/s sampling rates at reasonable power consumption. Here, two calibration techniques for high-performance SAR ADCs are presented. The first uses an on-chip stochastic-based mismatch calibration technique that is able to accurately compute and compensate for the mismatch of a capacitive DAC in a SAR ADC. The stochastic nature of the proposed calibration method enables determination of the mismatch of the CAPDAC with a resolution much better than that of the DAC. This allows the unit capacitor to scale down to as low as 280aF for a 9-bit DAC. Since the CAP-DAC causes a large part of the overall dynamic power consumption and directly determines both the sizes of the driving and sampling switches and the size of the input capacitive load of the ADC and the kT/C noise power, a small CAP-DAC helps the power efficiency. To validate the proposed calibration idea, a 10-bit asynchronous SAR ADC was fabricated in 28-nm CMOS. Measurement results show that the proposed stochastic calibration improves the ADC’s SFDR and SNDR by 14.9 dB, 11.5 dB, respectively. After calibration, the fabricated SAR ADC achieves an ENOB of 9.14 bit at a sampling rate of 85 MS/s, resulting in a Walden FoM of 10.9 fJ/c-s. The second calibration technique is a timing-skew calibration for a time-interleaved (TI) SAR ADC that calibrates/computes the inter-channel timing and offset mismatch simultaneously. Simulation results show the effectiveness of this calibration method. When used together, the proposed mismatch calibration technique and the timing-skew calibration technique enables a TI SAR ADC to be designed that can achieve a sampling rate of ∼GS/s with 10-bit resolution and a power consumption as low as ∼10mW; specifications that satisfy the requirements of 5G technology

Low-Power Slew-Rate Boosting Based 12-Bit Pipeline ADC Utilizing Forecasting Technique in the Sub-ADCS

The dissertation presents architecture and circuit solutions to improve the power efficiency of high-speed 12-bit pipelined ADCs in advanced CMOS technologies. First, the 4.5bit algorithmic pipelined front-end stage is proposed. It is shown that the algorithmic pipelined ADC requires a simpler sub-ADC and shows lower sensitivity to the Multiplying DAC (MDAC) errors and smaller area and power dissipation in comparison to the conventional multi-bit per stage pipelined ADC. Also, it is shown that the algorithmic pipelined architecture is more tolerant to capacitive mismatch for the same input-referred thermal noise than the conventional multi-bit per stage architecture. To take full advantage of these properties, a modified residue curve for the pipelined ADC is proposed. This concept introduces better linearity compared with the conventional residue curve of the pipelined ADC; this approach is particularly attractive for the digitization of signals with large peak to average ratio such as OFDM coded signals. Moreover, the minimum total required transconductance for the different architectures of the 12-bit pipelined ADC are computed. This helps the pipelined ADC designers to find the most power-efficient architecture between different topologies based on the same input-referred thermal noise. By employing this calculation, the most power efficient architecture for realizing the 12-bit pipelined ADC is selected. Then, a technique for slew-rate (SR) boosting in switched-capacitor circuits is proposed in the order to be utilized in the proposed 12-bit pipelined ADC. This technique makes use of a class-B auxiliary amplifier that generates a compensating current only when high slew-rate is demanded by large input signal. The proposed architecture employs simple circuitry to detect the need of injecting current at the output load by implementing a Pre-Amp followed by a class-B amplifier, embedded with a pre-defined hysteresis, in parallel with the main amplifier to boost its slew phase. The proposed solution requires small static power since it does not need high dc-current at the output stage of the main amplifier. The proposed technique is suitable for high-speed low-power multi-bit/stage pipelined ADC applications. Both transistor-level simulations and experimental results in TSMC 40nm technology reduces the slew-time for more than 45% and shorts the 1% settling time by 28% when used in a 4.5bit/stage pipelined ADC; power consumption increases by 20%. In addition, the technique of inactivating and disconnecting of the sub-ADC’s comparators by forecasting the sign of the sampled input voltage is proposed in the order to reduce the dynamic power consumption of the sub-ADCs in the proposed 12-bit pipelined ADC. This technique reduces the total dynamic power consumption more than 46%. The implemented 12-bit pipelined ADC achieves an SNDR/SFDR of 65.9/82.3 dB at low input frequencies and a 64.1/75.5 dB near Nyquist frequency while running at 500 MS/s. The pipelined ADC prototype occupies an active area of 0.9 mm^2 and consumes 18.16 mW from a 1.1 V supply, resulting in a figure of merit (FOM) of 22.4 and a 27.7 fJ/conversion-step at low-frequency and Nyquist frequency, respectively

Design and analysis of reconfigurable analog system

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.Cataloged from PDF version of thesis.Includes bibliographical references (p. 147-152).A highly-configurable analog system is presented. A prototype chip is fabricated and an ADC and filter functionalities are demonstrated. The chip consists of eight identical programmable stages. In an ADC configuration, the first five stages are programmed to implement a 10- bit ADC. The ADC has ENOB of 8 bits at 50 MSPS. The ENOB improves to 8.5 bits if the sampling rate is lowered to 30MSPS. The ADC has an FOM of 150fJ/conversionstep, which is very competitive with the state of the art ADCs. The first stage is responsible for 75% of the input-referred noise power. The sampling noise is responsible for 40% of the total noise power and the zero-crossing detector is responsible for 60%. The chip is tested in two different filter configurations. In one test, the first two stages of the chip are configured as a second order Butterworth filter and the third stage is configured as an amplifier. In another test, the first three stages of the chip are programmed as a third-order Butterworth filter. The desired filter functionalities are demonstrated in both configurations. It is shown that in a third order Butterworth filter, more than 90% of the noise is due to the zero-crossing detector of the last stage. This is mainly due to the fact that the noise of earlier stages is filtered with the filter transfer function, but the noise of the last stage is not filtered. The ZCBC architecture has been used to avoid the stability problems and scale power consumption with sampling frequency. A new technique is introduced to implement the terminating resistors in a ladder filter. This technique does not have any area or power overhead. An asymmetric differential signaling is also introduced. This method improves the dynamic range of the output signals, which is particularly important in new technology nodes with low supply voltage.by Payam Lajevardi.Ph.D