154 research outputs found
Design and development of microcantilever as a platform for moisture sensing
Ultra-sensitive and selective moisture sensors are needed in various industries for processing control or environmental monitoring. As an outstanding sensor platform, microcantilevers have potential application in moisture detection due to their advantages, such as low-level moisture detection limits, high accuracy, quick response time, high reproducibility, good recovery rate and low in cost. Our research results will lead to the first of its kind for the commercialization of a microcantilever-based moisture sensor used for industrial and household applications. The novelty of the present work is the development of SiO2 and Si cantilevers, which were fabricated using developed processes and modified with Al2O3, for detecting moisture as low as ppm level.
To increase the deflection of the microcantilever under surface stress induced by specific reactions, a new SiO2 microcantilever, which consists of two SiO2 cantilever beams as the sensing and reference elements, two connecting wings and three guard arms, has been developed which features a much lower Young\u27s modulus than conventional Si or SiNx microcantilevers. For comparing SiO2 cantilever with Si cantilevers, a model of the cantilever sensor is reported by using both analysis and simulation, resulting in good agreement with the experimental data. The results demonstrate that the SiO2 cantilever can achieve a much higher sensitivity than the Si cantilever due to its lower Young\u27s modulus. In order to fabricate this device, a new fabrication process using isotropic combined with anisotropic dry etching to release the SiO2 microcantilever beam by Inductively Coupled Plasma (ICP) was developed and investigated. This new process not only obtains a high etch rate at 9.1 μm per minute, but also provides good etch profile controllability, and a flexibility of device design. Attributed to its high sensitivity, Al2O3 coated SiO2 microcantilevers demonstrated the capability of detecting moisture concentration levels down to 30 ppm using optical detection methods. It can be seen that the SiO2microcantilevers, with appropriate sensing material, can be utilized as ultra sensitive moisture sensors and are potentially able to detect the moisture concentration level as low as 1 to 10 ppm.
Although optical readout systems are most extensively used for measurement of cantilever deflections in labs, they have some disadvantages, such as its alignment system is expensive and involves great precision. Piezoresistive, capacitive, MOSFET-embedded and frequency readout methods, which are all fit for commercial application, have been investigated both in simulation and experiment. It is found that the Al2O3 modified microcantilever operating in frequency mode is able to meet the requirements of detecting low moisture levels. To make this device compatible with IC technology, the piezoelectric microcantilever is chosen as the platform for moisture sensing. A piezoelectric microcantilever vibrates at its resonant frequency upon applying an appropriate AC voltage and provides an electrical signal at the output via piezoelectric coupling, which can be fed back through the phase shift loop to determine the change in resonant frequency caused by any change in mass. In order to fabricate the piezoelectric microcantilever, the sputtering parameters for ZnO were reported and investigated. The piezoelectric microcantilevers, which consists of bottom electrode, ZnO piezoelectric layer, and two separate top electrodes as sensing and actuation elements, were designed and fabricated using a standard lithography process. Its resonant frequency shift is measured at 1.25 Hz/ppm, based on an optical detection method. Although both SiO 2 and Si piezoelectric cantilevers were fabricated successfully, the latter are more likely to be used in dynamic mode because of the higher fragility of SiO2. The developed cantilever sensor platform operating in dynamic mode, which can be integrated with on-chip electronic circuitry, is able to provide ultra-sensitive detection, not only for moisture sensing, but also for chemical and biological sensing with appropriate surface modification
High Frequency Thermally Actuated Single Crystalline Silicon Micromechanical Resonators with Piezoresistive Readout
Over the past decades there has been a great deal of research on developing high frequency micromechanical resonators. As the two most common and conventional MEMS resonators, piezoelectric and electrostatic resonators have been at the center of attention despite having some drawbacks. Piezoelectric resonators provide low impedances that make them compatible with other low impedance electronic components, however they have low quality factors and complicated fabrication processes. In case of electrostatic resonators, they have higher quality factors but the need for smaller transductions gaps complicates their fabrication process and causes squeezed film damping in Air. In addition, the operation of both these resonators deteriorates at higher frequencies.
In this presented research, thermally actuated resonators with piezoresistive readout have been developed. It has been shown that not only do such resonators require a simple fabrication process, but also their performance improves at higher frequencies by scaling down all the dimensions of the structure. In addition, due to the internal thermo-electro-mechanical interactions, these active resonators can turn some of the consumed electronic power back into the mechanical structure and compensate for the mechanical losses. Therefore, such resonators can provide self-Q-enhancement and self-sustained-oscillation without the need for any electronic circuitry. In this research these facts have been shown both experimentally and theoretically. In addition, in order to further simplify the fabrication process of such structures, a new controlled batch fabrication method for fabricating silicon nanowires has been developed. This unique fabrication process has been utilized to fabricate high frequency, low power thermal-piezoresistive resonators. Finally, a new thermal-piezoresistive resonant structure has been developed that can operate inside liquid. This resonant structure can be utilized as an ultra sensitive biomedical mass sensor
Mechanical systems in the quantum regime
Mechanical systems are ideal candidates for studying quantumbehavior of
macroscopic objects. To this end, a mechanical resonator has to be cooled to
its ground state and its position has to be measured with great accuracy.
Currently, various routes to reach these goals are being explored. In this
review, we discuss different techniques for sensitive position detection and we
give an overview of the cooling techniques that are being employed. The latter
include sideband cooling and active feedback cooling. The basic concepts that
are important when measuring on mechanical systems with high accuracy and/or at
very low temperatures, such as thermal and quantum noise, linear response
theory, and backaction, are explained. From this, the quantum limit on linear
position detection is obtained and the sensitivities that have been achieved in
recent opto and nanoelectromechanical experiments are compared to this limit.
The mechanical resonators that are used in the experiments range from
meter-sized gravitational wave detectors to nanomechanical systems that can
only be read out using mesoscopic devices such as single-electron transistors
or superconducting quantum interference devices. A special class of
nanomechanical systems are bottom-up fabricated carbon-based devices, which
have very high frequencies and yet a large zero-point motion, making them ideal
for reaching the quantum regime. The mechanics of some of the different
mechanical systems at the nanoscale is studied. We conclude this review with an
outlook of how state-of-the-art mechanical resonators can be improved to study
quantum {\it mechanics}.Comment: To appear in Phys. Re
Interface Circuits for Microsensor Integrated Systems
ca. 200 words; this text will present the book in all promotional forms (e.g. flyers). Please describe the book in straightforward and consumer-friendly terms. [Recent advances in sensing technologies, especially those for Microsensor Integrated Systems, have led to several new commercial applications. Among these, low voltage and low power circuit architectures have gained growing attention, being suitable for portable long battery life devices. The aim is to improve the performances of actual interface circuits and systems, both in terms of voltage mode and current mode, in order to overcome the potential problems due to technology scaling and different technology integrations. Related problems, especially those concerning parasitics, lead to a severe interface design attention, especially concerning the analog front-end and novel and smart architecture must be explored and tested, both at simulation and prototype level. Moreover, the growing demand for autonomous systems gets even harder the interface design due to the need of energy-aware cost-effective circuit interfaces integrating, where possible, energy harvesting solutions. The objective of this Special Issue is to explore the potential solutions to overcome actual limitations in sensor interface circuits and systems, especially those for low voltage and low power Microsensor Integrated Systems. The present Special Issue aims to present and highlight the advances and the latest novel and emergent results on this topic, showing best practices, implementations and applications. The Guest Editors invite to submit original research contributions dealing with sensor interfacing related to this specific topic. Additionally, application oriented and review papers are encouraged.
Design of a MEMS-based 52 MHz oscillator
Mechanical resonators are widely applied in time-keeping and frequency reference applications. Mechanical resonators are preferred over electrical resonators because of their high Q. In the $4.1 billion (2008) timing market, quartz crystals are still ubiquitous in electronic equipment. Quartz crystals show excellent performance in terms of stability (shortterm and long-term), power handling, and temperature drift. MEMS resonators are investigated as a potential alternative to the bulky quartz crystals, which cannot be integrated with IC technology. MEMS offer advantages in terms of size, cost price, and system integration. Efforts over recent years have shown that MEMS resonators are able to meet the high performance standards set by quartz. Critical success factors are high Q-factor, low temperature drift, low phase noise, and low power. This PhD thesis addresses the feasibility of scaling MEMS resonators/oscillators to frequencies above 10 MHz. The main deliverable is a 52 MHz MEMS-based oscillator. The MEMS resonators at NXP are processed on 8-inch silicon-on-insulator (SOI) wafers, with a SOI layer thickness of 1.5 µm and a buried oxide layer thickness of 1 µm. The strategic choice for thin SOI substrates has been made for two reasons. First, MEMS processing in thin silicon layers can be done with standard CMOS processing tools. The silicon dioxide layer serves as a sacrificial layer. Second, identical substrates are used for the Advanced Bipolar CMOS DMOS (ABCD) IC-processes. This class of processes can handle high voltages (ABCD2 up to 120V). The high voltage capability is suitable for the transduction of the mechanical resonator. Both MEMS and IC are processed on a similar substrate, since the strategic aim is to integrate the MEMS structure with the IC-process in the long run. Frequency scaling is investigated for both the capacitive and the piezoresistive MEMS resonator. MEMS resonators have been successfully tested from 13 MHz to over 400 MHz. This is achieved by decreasing the size of the resonator with a factor 32. We show that the thin SOI layer and the decreasing size of the resonator increase the effective impedance of the capacitive resonator at higher frequencies. For the piezoresistive resonator, we show that this readout principle is insensitive to geometrical scaling and layer thickness. Therefore, the piezoresistive readout is preferred at high frequencies. The effective impedance can be kept low, at the expense of higher power consumption. Frequency accuracy can be improved by decreasing the initial frequency spread and the temperature drift of the MEMS resonator. The main source of initial frequency spread is geometrical offset, due to the non-perfect pattern transfer from mask layout to SOI. A FEM tool has been developed in Comsol Multiphysics to obtain compensated layouts. The resonance frequency of these designs is first-order compensated for geometric offset. The FEM tool is used to obtain compensated resonators of various designs. We show empirically that the compensation by design is effective on a 52 MHz square plate design. For the compensated design, frequency spread measurements over a complete wafer show that there are other systematic sources of frequency spread. The resonance frequency of the silicon MEMS resonator drifts about –30 ppm/K. This is due to the Young’s modulus of silicon that depends on temperature. We have investigated two compensation methods. The first is passive compensation by coating the silicon resonator with a silicon dioxide skin. The Young’s modulus of silicon dioxide has a positive temperature drift. Measurements on globally oxidized structures show that the right oxide thickness reduces the linear temperature drift of the resonator to zero. A second method uses an oven-control principle. The temperature of the resonator is fixed, independent of the ambient temperature. A demo of this principle has been designed with a piezoresistive resonator in which the dc readout current through the resonator is used to control the temperature of the resonator. With both concepts, more than a factor 10 reduction in temperature drift is achieved. To demonstrate the feasibility of high-frequency oscillators, a MEMS-based 56 MHz oscillator has been designed for which a piezoresistive dogbone resonator is used. The amplifier has been designed in the ABCD2 IC-process. The MEMS oscillator consumes 6.1 mW and exhibits a phase noise of –102 dBc/Hz at 1 kHz offset from the carrier and a floor of –113 dBc/Hz. This demonstrates feasibility of the piezoresistive MEMS oscillator for lowpower, low-noise applications. Summarizing, this PhD thesis work as part of the MEMSXO project at NXP demonstrates a MEMS oscillator concept based on the piezoresistive resonator in thin SOI. It shows that by compensated designs for geometric offset and oven-control to reduce temperature drift, a frequency accuracy can be achieved that can compete with the performance of crystal oscillators. In a benchmark with MEMS competitors the concept shows the lowest phase noise, making it the most suited concept for wireless applications
Gallium Nitride Integrated Microsystems for Radio Frequency Applications.
The focus of this work is design, fabrication, and characterization of novel and advanced electro-acoustic devices and integrated micro/nano systems based on Gallium Nitride (GaN). Looking beyond silicon (Si), compound semiconductors, such as GaN have significantly improved the performance of the existing electronic devices, as well as enabled completely novel micro/nano systems. GaN is of particular interest in the “More than Moore” era because it combines the advantages of a wide-band gap semiconductor with strong piezoelectric properties. Popular in optoelectronics, high-power and high-frequency applications, the added piezoelectric feature, extends the research horizons of GaN to diverse scientific and multi-disciplinary fields. In this work, we have incorporated GaN micro-electro-mechanical systems (MEMS) and acoustic resonators to the GaN baseline process and used high electron mobility transistors (HEMTs) to actuate, sense and amplify the acoustic waves based on depletion, piezoelectric, thermal and piezo-resistive mechanisms and achieved resonance frequencies ranging from 100s of MHz up to 10 GHz with frequency×quality factor (f×Q) values as high as 1013. Such high-performance integrated systems can be utilized in radio frequency (RF) and microwave communication and extreme-environment applications.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/135799/1/azadans_1.pd
Nanomechanical Resonators: Toward Atomic Scale
The quest for realizing and manipulating ever smaller man-made movable structures and dynamical machines has spurred tremendous endeavors, led to important discoveries, and inspired researchers to venture to new grounds. Scientific feats and technological milestones of miniaturization of mechanical structures have been widely accomplished by advances in machining and sculpturing ever shrinking features out of bulk materials such as silicon. With the flourishing multidisciplinary field of low-dimensional nanomaterials, including one-dimensional (1D) nanowires/nanotubes, and two-dimensional (2D) atomic layers such as graphene/phosphorene, growing interests and sustained efforts have been devoted to creating mechanical devices toward the ultimate limit of miniaturization— genuinely down to the molecular or even atomic scale. These ultrasmall movable structures, particularly nanomechanical resonators that exploit the vibratory motion in these 1D and 2D nano-to-atomic-scale structures, offer exceptional device-level attributes, such as ultralow mass, ultrawide frequency tuning range, broad dynamic range, and ultralow power consumption, thus holding strong promises for both fundamental studies and engineering applications. In this Review, we offer a comprehensive overview and summary of this vibrant field, present the state-of-the-art devices and evaluate their specifications and performance, outline important achievements, and postulate future directions for studying these miniscule yet intriguing molecular-scale machines
Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-Force magnetometers
Tesi en modalitat de compendi de publicacionsToday, the most common form of mass-production semiconductor device fabrication is Complementary Metal-Oxide Semiconductor (CMOS) technology. The dedicated Integrated Circuit (IC) interfaces of commercial sensors are manufactured using this technology. The sensing elements are generally implemented using Micro-Electro-Mechanical-Systems (MEMS), which need to be manufactured using specialized micro-machining processes. Finally, the CMOS circuitry and the MEMS should ideally be combined in a single package.
For some applications, integration of CMOS electronics and MEMS devices on a single chip (CMOS-MEMS) has the potential of reducing fabrication costs, size, parasitics and power consumption, compared to other integration approaches. Remarkably, a CMOS-MEMS device may be built with the back-end-of-line (BEOL) layers of the CMOS process. But, despite its advantages, this particular approach has proven to be very challenging given the current lack of commercial products in the market.
The main objective of this Thesis is to prove that a high-performance MEMS, sealed and packaged in a standard package, may be accurately modeled and manufactured using the BEOL layers of a CMOS process in a reliable way. To attain this, the first highly reliable novel CMOS-MEMS Lorentz Force Magnetometer (LFM) was successfully designed, modeled, manufactured, characterized and subjected to several reliability tests, obtaining a comparable or superior performance to the typical solid-state magnetometers used in current smartphones. A novel technique to avoid magnetic offsets, the main drawback of LFMs, was presented and its performance confirmed experimentally.
Initially, the issues encountered in the manufacturing process of MEMS using the BEOL layers of the CMOS process were discouraging. Vapor HF release of MEMS structures using the BEOL of CMOS wafers resulted in undesirable damaging effects that may lead to the conclusion that this manufacturing approach is not feasible. However, design techniques and workarounds for dealing with the observed issues were devised, tested and implemented in the design of the LFM presented in this Thesis, showing a clear path to successfully fabricate different MEMS devices using the BEOL.Hoy en día, la forma más común de producción en masa es una tecnología llamada Complementary Metal-Oxide Semiconductor (CMOS). La interfaz de los circuitos integrados (IC) de sensores comerciales se fabrica usando, precisamente, esta tecnología. Actualmente es común que los sensores se implementen usando Sistemas Micro-Electro-Mecánicos (MEMS), que necesitan ser fabricados usando procesos especiales de micro-mecanizado. En un último paso, la circuitería CMOS y el MEMS se combinan en un único elemento, llamado package. En algunas aplicaciones, la integración de la electrónica CMOS y los dispositivos MEMS en un único chip (CMOS-MEMS) alberga el potencial de reducir los costes de fabricación, el tamaño, los parásitos y el consumo, al compararla con otras formas de integración. Resulta notable que un dispositivo CMOS-MEMS pueda ser construido con las capas del back-end-of-line (BEOL) de un proceso CMOS. Pero, a pesar de sus ventajas, este enfoque ha demostrado ser un gran desafío como demuestra la falta de productos comerciales en el mercado. El objetivo principal de esta Tesis es probar que un MEMS de altas prestaciones, sellado y empaquetado en un encapsulado estándar, puede ser correctamente modelado y fabricado de una manera fiable usando las capas del BEOL de un proceso CMOS. Para probar esto mismo, el primer magnetómetro CMOS-MEMS de fuerza de Lorentz (LFM) fue exitosamente diseñado, modelado, fabricado, caracterizado y sometido a varias pruebas de fiabilidad, obteniendo un rendimiento comparable o superior al de los típicos magnetómetros de estado sólido, los cuales son usados en móviles actuales. Cabe destacar que en esta Tesis se presenta una novedosa técnica con la que se evitan offsets magnéticos, el mayor inconveniente de los magnetómetros de fuerza Lorentz. Su efectividad fue confirmada experimentalmente. En los inicios, los problemas asociados al proceso de fabricación de MEMS usando las capas BEOL de obleas CMOS resultaba desalentador. Liberar estructuras MEMS hechas con obleas CMOS con vapor de HF producía efectos no deseados que bien podrían llevar a la conclusión de que este enfoque de fabricación no es viable. Sin embargo, se idearon y probaron técnicas de diseño especiales y soluciones ad-hoc para contrarrestar estos efectos no deseados. Se implementaron en el diseño del magnetómetro de Lorentz presentado en esta Tesis, arrojando excelentes resultados, lo cual despeja el camino hacia la fabricación de diferentes dispositivos MEMS usando las capas BEOL.Postprint (published version
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