833 research outputs found

    Parametric macromodeling of lossy and dispersive multiconductor transmission lines

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    We propose an innovative parametric macromodeling technique for lossy and dispersive multiconductor transmission lines (MTLs) that can be used for interconnect modeling. It is based on a recently developed method for the analysis of lossy and dispersive MTLs extended by using the multivariate orthonormal vector fitting (MOVF) technique to build parametric macromodels in a rational form. They take into account design parameters, such as geometrical layout or substrate features, in addition to frequency. The presented technique is suited to generate state-space models and synthesize equivalent circuits, which can be easily embedded into conventional SPICE-like solvers. Parametric macromodels allow to perform design space exploration, design optimization, and sensitivity analysis efficiently. Numerical examples validate the proposed approach in both frequency and time domain

    An Electromigration and Thermal Model of Power Wires for a Priori High-Level Reliability Prediction

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    In this paper, a simple power-distribution electrothermal model including the interconnect self-heating is used together with a statistical model of average and rms currents of functional blocks and a high-level model of fanout distribution and interconnect wirelength. Following the 2001 SIA roadmap projections, we are able to predict a priori that the minimum width that satisfies the electromigration constraints does not scale like the minimum metal pitch in future technology nodes. As a consequence, the percentage of chip area covered by power lines is expected to increase at the expense of wiring resources unless proper countermeasures are taken. Some possible solutions are proposed in the paper

    A thermal simulation process based on electrical modeling for complex interconnect, packaging, and 3DI structures

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    To reduce the product development time and achieve first-pass silicon success, fast and accurate estimation of very-large-scale integration (VLSI) interconnect, packaging and 3DI (3D integrated circuits) thermal profiles has become important. Present commercial thermal analysis tools are incapable of handling very complex structures and have integration difficulties with existing design flows. Many analytical thermal models, which could provide fast estimates, are either too specific or oversimplified. This paper highlights a methodology, which exploits electrical resistance solvers for thermal simulation, to allow acquisition of thermal profiles of complex structures with good accuracy and reasonable computation cost. Moreover, a novel accurate closed-form thermal model is developed. The model allows an isotropic or anisotropic equivalent medium to replace the noncritical back-end-of-line (BEOL) regions so that the simulation complexity is dramatically reduced. Using these techniques, this paper introduces the thermal modeling of practical complex VLSI structures to facilitate thermal guideline generation. It also demonstrates the benefits of the proposed anisotropic equivalent medium approximation for real VLSI structures in terms of the accuracy and computational cost. © 2006 IEEE.published_or_final_versio

    A survey of carbon nanotube interconnects for energy efficient integrated circuits

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    This article is a review of the state-of-art carbon nanotube interconnects for Silicon application with respect to the recent literature. Amongst all the research on carbon nanotube interconnects, those discussed here cover 1) challenges with current copper interconnects, 2) process & growth of carbon nanotube interconnects compatible with back-end-of-line integration, and 3) modeling and simulation for circuit-level benchmarking and performance prediction. The focus is on the evolution of carbon nanotube interconnects from the process, theoretical modeling, and experimental characterization to on-chip interconnect applications. We provide an overview of the current advancements on carbon nanotube interconnects and also regarding the prospects for designing energy efficient integrated circuits. Each selected category is presented in an accessible manner aiming to serve as a survey and informative cornerstone on carbon nanotube interconnects relevant to students and scientists belonging to a range of fields from physics, processing to circuit design

    Recent Trends and Considerations for High Speed Data in Chips and System Interconnects

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    This paper discusses key issues related to the design of large processing volume chip architectures and high speed system interconnects. Design methodologies and techniques are discussed, where recent trends and considerations are highlighted

    Compact and accurate models of large single-wall carbon-nanotube interconnects

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    Single-wall carbon nanotubes (SWCNTs) have been proposed for very large scale integration interconnect applications and their modeling is carried out using the multiconductor transmission line (MTL) formulation. Their time-domain analysis has some simulation issues related to the high number of SWCNTs within each bundle, which results in a highly complex model and loss of accuracy in the case of long interconnects. In recent years, several techniques have been proposed to reduce the complexity of the model whose accuracy decreases as the interconnection length increases. This paper presents a rigorous new technique to generate accurate reduced-order models of large SWCNT interconnects. The frequency response of the MTL is computed by using the spectral form of the dyadic Green's function of the 1-D propagation problem and the model complexity is reduced using rational-model identification techniques. The proposed approach is validated by numerical results involving hundreds of SWCNTs, which confirm its capability of reducing the complexity of the model, while preserving accuracy over a wide frequency range

    Addressing Computational Complexity of High Speed Distributed Circuits Using Model Order Reduction

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    Advanced in the fabrication technology of integrated circuits (ICs) over the last couple of years has resulted in an unparalleled expansion of the functionality of microelectronic systems. Today’s ICs feature complex deep-submicron mixed-signal designs and have found numerous applications in industry due to their lower manufacturing costs and higher performance levels. The tendency towards smaller feature sizes and increasing clock rates is placing higher demands on signal integrity design by highlighting previously negligible interconnect effects such as distortion, reflection, ringing, delay, and crosstalk. These effects if not predicted in the early stages of the design cycle can severely degrade circuit performance and reliability. The objective of this thesis is to develop new model order reduction (MOR) techniques to minimize the computational complexity of non-linear circuits and electronic systems that have delay elements. MOR techniques provide a mechanism to generate reduced order models from the detailed description of the original modified nodal analysis (MNA) formulation. The following contributions are made in this thesis: 1. The first project presents a methodology for reduction of Partial Element Equivalent Circuit (PEEC) models. PEEC method is widely used in electromagnetic compatibility and signal integrity problems in both the time and frequency domains. The PEEC model with retardation has been applied to 3-D analysis but often result in large and dense matrices, which are computationally expensive to solve. In this thesis, a new moment matching technique based on Multi-order Arnoldi is described to model PEEC networks with retardation. 2. The second project deals with developing an efficient model order reduction algorithm for simulating large interconnect networks with nonlinear elements. The proposed methodology is based on a multidimensional subspace method and uses constraint equations to link the nonlinear elements and biasing sources to the reduced order model. This approach significantly improves the simulation time of distributed nonlinear systems, since additional ports are not required to link the nonlinear elements to the reduced order model, yielding appreciable savings in the size of the reduced order model and computational time. 3. A parameterized reduction technique for nonlinear systems is presented. The proposed method uses multidimensional subspace and variational analysis to capture the variances of design parameters and approximates the weakly nonlinear functions as a Taylor series. An SVD approach is presented to address the efficiency of reduced order model. The proposed methodology significantly improves the simulation time of weakly nonlinear systems since the size of the reduced system is smaller than the original system and a new reduced model is not required each time a design parameter is changed

    VLSI Design

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    This book provides some recent advances in design nanometer VLSI chips. The selected topics try to present some open problems and challenges with important topics ranging from design tools, new post-silicon devices, GPU-based parallel computing, emerging 3D integration, and antenna design. The book consists of two parts, with chapters such as: VLSI design for multi-sensor smart systems on a chip, Three-dimensional integrated circuits design for thousand-core processors, Parallel symbolic analysis of large analog circuits on GPU platforms, Algorithms for CAD tools VLSI design, A multilevel memetic algorithm for large SAT-encoded problems, etc

    A two-step perturbation technique for nonuniform single and differential lines

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    A novel two-step perturbation technique to analyze nonuniform single and differential transmission lines in the frequency domain is presented. Here, nonuniformities are considered as perturbations with respect to a nominal uniform line, allowing an interconnect designer to easily see what the effect of (unwanted) perturbations might be. Based on the Telegrapher's equations, the proposed approach yields second-order ordinary distributed differential equations with source terms. Solving these equations in conjunction with the pertinent boundary conditions leads to the sought-for currents and voltages along the lines. The accuracy and efficiency of the perturbation technique is demonstrated for a linearly tapered microstrip line and for a pair of coupled lines with random nonuniformities. Moreover, the necessity of adopting a two-step perturbation in order to get a good accuracy is also illustrated
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