Integrated Circuits for Programming Flash Memories in Portable Applications

Smart devices such as smart grids, smart home devices, etc. are infrastructure systems that connect the world around us more than before. These devices can communicate with each other and help us manage our environment. This concept is called the Internet of Things (IoT). Not many smart nodes exist that are both low-power and programmable. Floating-gate (FG) transistors could be used to create adaptive sensor nodes by providing programmable bias currents. FG transistors are mostly used in digital applications like Flash memories. However, FG transistors can be used in analog applications, too. Unfortunately, due to the expensive infrastructure required for programming these transistors, they have not been economical to be used in portable applications. In this work, we present low-power approaches to programming FG transistors which make them a good candidate to be employed in future wireless sensor nodes and portable systems. First, we focus on the design of low-power circuits which can be used in programming the FG transistors such as high-voltage charge pumps, low-drop-out regulators, and voltage reference cells. Then, to achieve the goal of reducing the power consumption in programmable sensor nodes and reducing the programming infrastructure, we present a method to program FG transistors using negative voltages. We also present charge-pump structures to generate the necessary negative voltages for programming in this new configuration

High-efficiency high voltage hybrid charge pump design with an improved chip area

A hybrid charge pump was developed in a 0.13- $\mu \text{m}$ Bipolar-CMOS-DMOS (BCD) process which utilised high drain-source voltage MOS devices and low-voltage integrated metal-insulator-metal (MIM) capacitors. The design consisted of a zero-reversion loss cross-coupled stage and a new self-biased serial-parallel charge pump design. The latter has been shown to have an area reduction of 60% in comparison to a Schottky diode-based Dickson charge pump operating at the same frequency. Post-layout simulations were carried out which demonstrated a peak efficiency of 38% at the output voltage of 18.5 V; the maximum specified output voltage of 27 V was also achieved. A standalone serial-parallel charge pump was shown to have a better transient response and a flatter efficiency curve; these are preferable for time-sensitive applications with a requirement of a broader range of output currents. These findings have significant implications for reducing the total area of implantable high-voltage devices without sacrificing charge pump efficiency or maximum output voltage

Insights into tunnel FET-based charge pumps and rectifiers for energy harvesting applications

In this paper, the electrical characteristics of tunnel field-effect transistor (TFET) devices are explored for energy harvesting front-end circuits with ultralow power consumption. Compared with conventional thermionic technologies, the improved electrical characteristics of TFET devices are expected to increase the power conversion efficiency of front-end charge pumps and rectifiers powered at sub-µW power levels. However, under reverse bias conditions the TFET device presents particular electrical characteristics due to its different carrier injection mechanism. In this paper, it is shown that reverse losses in TFET-based circuits can be attenuated by changing the gate-to-source voltage of reverse-biased TFETs. Therefore, in order to take full advantage of the TFETs in front-end energy harvesting circuits, different circuit approaches are required. In this paper, we propose and discuss different topologies for TFET-based charge pumps and rectifiers for energy harvesting applications.Peer ReviewedPostprint (author's final draft

High-Performance Silicon Nanowire Electronics

This thesis explores 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications via the fabrication and testing of SiNW-based ring oscillators. Both SiNW surface treatments and dielectric annealing are reported for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (~108), low drain-induced barrier lowering (~30 mV), high carrier mobilities (~269 cm2/V•s), and low subthreshold swing (~80 mV/dec). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs is explored as well. The inverter demonstrates the highest voltage gain (~148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications. A set of novel charge-trap non-volatile memory devices based on high-performance SiNW FETs are well investigated. These memory devices integrate Fe2O3 quantum dots (FeO QDs) as charge storage elements. A template-assisted assembly technique is used to align FeO QDs into a close-packed, ordered matrix within the trenches that separate highly aligned SiNWs, and thus store injected charges. A Fowler-Nordheim tunneling mechanism describes both the program and erase operations. The memory prototype demonstrates promising characteristics in terms of large threshold voltage shift (~1.3 V) and long data retention time (~3 × 106 s), and also allows for key components to be systematically varied. For example, varying the size of the QDs indicates that larger diameter QDs exhibit a larger memory window, suggesting the QD charging energy plays an important role in the carrier transport. The device temperature characteristics reveal an optimal window for device performance between 275K and 350K. The flexibility of integrating the charge-trap memory devices with the SiNW logic devices offers a low-cost embedded non-volatile memory solution. A building block for a SiNW-based field-programmable gate array (FPGA) is proposed in the future work.</p

Low-Power and Programmable Analog Circuitry for Wireless Sensors

Embedding networks of secure, wirelessly-connected sensors and actuators will help us to conscientiously manage our local and extended environments. One major challenge for this vision is to create networks of wireless sensor devices that provide maximal knowledge of their environment while using only the energy that is available within that environment. In this work, it is argued that the energy constraints in wireless sensor design are best addressed by incorporating analog signal processors. The low power-consumption of an analog signal processor allows persistent monitoring of multiple sensors while the device\u27s analog-to-digital converter, microcontroller, and transceiver are all in sleep mode. This dissertation describes the development of analog signal processing integrated circuits for wireless sensor networks. Specific technology problems that are addressed include reconfigurable processing architectures for low-power sensing applications, as well as the development of reprogrammable biasing for analog circuits

Low-Power and Programmable Analog Circuitry for Wireless Sensors

Embedding networks of secure, wirelessly-connected sensors and actuators will help us to conscientiously manage our local and extended environments. One major challenge for this vision is to create networks of wireless sensor devices that provide maximal knowledge of their environment while using only the energy that is available within that environment. In this work, it is argued that the energy constraints in wireless sensor design are best addressed by incorporating analog signal processors. The low power-consumption of an analog signal processor allows persistent monitoring of multiple sensors while the device\u27s analog-to-digital converter, microcontroller, and transceiver are all in sleep mode. This dissertation describes the development of analog signal processing integrated circuits for wireless sensor networks. Specific technology problems that are addressed include reconfigurable processing architectures for low-power sensing applications, as well as the development of reprogrammable biasing for analog circuits

A Memory-Targeted Dynamic Reconfigurable Charge Pump to Achieve a Power Consumption Reduction in IoT Nodes

Targeting the more recently adopted low-power memories for data-logging operation in IoT nodes, this paper presents a simple reconfigurable dual-branch cross-coupled charge pump (CP) topology in which clock amplitude scaling and modulation of the number of stages are exploited to improve power efficiency and/or change the output voltage without degrading speed performance. The proposed solution allows a reduction of the power conversion losses, maintaining speed, maximum output voltage and silicon area unaltered as compared to the conventional charge pump. Post-layout simulation results confirm the effectiveness of the proposed topology which can be adapted to any other kind of linear charge pump

TOPOLOGY, ANALYSIS, AND CMOS IMPLEMENTATION OF SWITCHED-CAPACITOR DC-DC CONVERTERS

This review highlights various design and realization aspects of three commonly used charge pump topologies, namely, the linear, exponential, and the Fibonacci type of charge pumps. We shall outline the new methods developed recently for analyzing the steady and dynamic performances of these circuits. Some practical issues for the CMOS implementation of these charge pump structures will be critically discussed. Finally, some conventional voltage regulation methods for maintaining a stable output under a large range of loading current and supply voltage fluctuations will be proposed

ランダム・テレグラフ・ノイズの微細MOSFETへの影響に関する研究

筑波大学 (University of Tsukuba)201