207 research outputs found

    Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks

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    In this paper, we propose a new configuration for improving the isolation bandwidth of MMIC single-pole-double-throw (SPDT) passive high-electron-mobility transistor (HEMT) switches operating at millimeter frequency range. While the conventional configuration adopted open-stub loading for compensation of the off-state capacitance, radial stubs were introduced in our approach to improve the operational bandwidth of the SPDT switch. Implemented in 0.15 m GaAs pHEMT technology, the proposed configuration exhibited a measured insertion loss of less than 2.5 dB with better than 30 dB isolation level over the frequency range from 33 GHz to 44 GHz. In terms of the bandwidth of operation, the proposed configuration achieved a fractional bandwidth of 28.5% compared to that of 12.3% for the conventional approach. Such superior bandwidth performance is mainly attributed to the less frequency dependent nature of the radial stubs

    An Overview of Filter Integrated Switch (FIS) for RF and Microwave Applications

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    Integrating multiple devices into one single device is an effective method to reduce circuit size, mismatching loss, and fabrication cost. Radio frequency (RF) and microwave device integrated with filter have become a popular design concept in the recent years. In this paper, an overview of the filter integrated switch (FIS) for RF and microwave applications is presented based on previously published studies and research journals starting from 2006 until 2016. This paper also emphasizes the use of previous and current development of filter integrated switches which mainly covers the fundamental concept on the FIS, the research trends in designs and developments. At the end, this paper reports on the variety of applications that can greatly benefit from FIS and some challenges and factors that need to be considered in designing and development of filter integrated switches

    Simulation Analysis on the Potential Application of Matched Bandstop to Bandpass Filter in Filter Integrated SPDT Switch Design

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    This paper presents the simulation analysis on the potential application of matched bandstop to bandpass filter in filter integrated switch (FIS) design. The FIS consists of matched band-stop to bandpass filter integrated with single-pole-double-throw (SPDT) switch. The proposed design was demonstrated for 2.45 GHz applications in wireless data communication systems such as Bluetooth and Zigbee. The filter was based on L-shape lossy resonator, which can provide an absorptive feature. PIN diodes were used as switching elements for the SPDT switch and to reconfigure between band-stop and bandpass responses. Therefore, the key advantages of the proposed design are high isolation and good return loss at both ON- and OFF-state ports. As a result, the simulation showed the followings: higher than 10 dB of return loss and greater than 25 dB of isolation at the operation frequency

    An x-band slow-wave T/R switch in 0.25-μm SiGe BiCMOS

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    Good performance RF-MEMS SP2T switches in CPW configuration for space applications.

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    Coplanar (CPW) waveguide based on cantilever or clamped-clamped switches have been developed for use in space applications. All the devices are manufactured on high-resistive silicon using surface micro-machining technology. The SP2T switches provide very good performance in terms of insertion and return loss and isolation over a wide frequency band. These switches are intended to be used as building blocks for large order switching matrices for satellite applications. Full wave simulations and measured RF performances are shown to be in very good agreement, showing high performance for all SPST typologies. Depending on the specific design, insertion loss -20dB, return loss between -5dB and -15dB and isolation between -20dB and -23dB has been obtained in the 0-40 GHz frequency band. In this paper implementation of HFSS (High Frequency Structure Simulator) is done to take desired results

    A COMPREHENSIVE OVERVIEW OF RECENT DEVELOPMENTS IN RF-MEMS TECHNOLOGY-BASED HIGH-PERFORMANCE PASSIVE COMPONENTS FOR APPLICATIONS IN THE 5G AND FUTURE TELECOMMUNICATIONS SCENARIOS

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    The goal of this work is to provide an overview about the current development of radio-frequency microelectromechanical systems technology, with special attention towards those passive components bearing significant application potential in the currently developing 5G paradigm. Due to the required capabilities of such communication standard in terms of high data rates, extended allocated spectrum, use of massive MIMO (Multiple-Input-Multiple-Output) systems, beam steering and beam forming, the focus will be on devices like switches, phase shifters, attenuators, filters, and their packaging/integration. For each of the previous topics, several valuable contributions appeared in the last decade, underlining the improvements produced in the state of the art and the chance for RF-MEMS technology to play a prominent role in the actual implementation of the 5G infrastructure

    The Study of Reconfigurable Antennas and Associated Circuitry

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    This research focuses on the design of pattern reconfigurable antennas and the associated circuitry. The proposed pattern reconfigurable antenna designs benefit from advantages such as maximum pattern diversity and optimum switching circuits to realise 5G reconfigurable antennas. Whereas MIMO based solutions can provide increased channel capacity, they demand high computational capability and power consumption due to multiple channel processing. This prevents their use in many applications most notably in the Internet of Things where power consumption is of key importance. A switched-beam diversity allows an energy-efficient solution improving the link budget even for small low-cost battery operated IoT/sensor network applications. The main focus of the antenna reconfiguration in this work is for switched-beam diversity. The fundamental switching elements are discussed including basic PIN diode circuits. Techniques to switch the antenna element in the feed or shorting the antenna element to the ground plane are presented. A back-to-back microstrip patch antenna with two hemispherical switchable patterns is proposed. The patch elements on a common ground plane, are switched with a single-pole double-throw PIN diode circuit. Switching the feed selects either of two identical oppositely oriented radiation patterns for maximum diversity in one plane. The identical design of the antenna elements provides similar performance control of frequency and radiation pattern in different states. This antenna provides a simple solution to cross-layer PIN diode circuit designs. A mirrored structure study provides an understanding of performance control for different switching states. A printed inverted-F antenna is presented for monopole reconfigurable antenna design. The proposed low-profile antenna consists of one main radiator and one parasitic element. By shorting the parasitic element to the ground plane using only one PIN diode, the antenna is capable of switching both the pattern and polarisation across the full bandwidth. The switched orthogonal pattern provides the maximum spatial pattern diversity and is realised using a simple structure. Then, a dual-stub coplanar Vivaldi antenna with a parasitic element is presented for the 5G mm-Wave band. The use of a dual-stub coupled between the parasitic element and two tapered slots is researched. The parasitic element shape and size is optimised to increase the realised gain. A bandpass coupled line filter is used for frequency selective features. The use of slits on the outer edge of the ground plane provides a greater maximum gain. This integrated filtenna offers lower insertion loss than the commercial DC blocks. The UWB antenna with an integrated filter can be used for harmonic suppression. The influence of the integrated filter circuit close to the antenna geometry informs the design of PIN diode circuit switching and power supply in the 5G band. Based on the filter design in the mm-Wave band, a method of designing a feasible DC power supply for the PIN diode in the mm-Wave band is studied. A printed Yagi-Uda antenna array is integrated with switching circuitry to realise a switched 180° hemispheres radiation pattern. The antenna realises a maximum diversity in one plane. The study offers the possibility to use PIN diodes in the mm-Wave band for reconfigurable antenna designs. For the presented antennas, key geometric parameters are discussed for improved understanding of the trade-offs in radiation pattern/beamwidth and gain control for reconfigurable antenna applications

    Ultra-low power radio transceiver for wireless sensor networks

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    The objective of this thesis is to present the design and implementation of ultra-low power radio transceivers at microwave frequencies, which are applicable to wireless sensor network (WSN) and, in particular, to the requirement of the Speckled Computing Consortium (or SpeckNet). This was achieved through quasi-MMIC prototypes and monolithic microwave integrated circuit (MMIC) with dc power consumption of less than 1mW and radio communication ranges operating at least one metre. A wireless sensor network is made up of widely distributed autonomous devices incorporating sensors to cooperatively monitor physical environments. There are different kinds of sensor network applications in which sensors perform a wide range of activities. Among these, a certain set of applications require that sensor nodes collect information about the physical environment. Each sensor node operates autonomously without a central node of control. However, there are many implementation challenges associated with sensor nodes. These nodes must consume extremely low power and must communicate with their neighbours at bit-rates in the order of hundreds of kilobits per second and potentially need to operate at high volumetric densities. Since the power constraint is the most challenging requirement, the radio transceiver must consume ultra-low power in order to prolong the limited battery capacity of a node. The radio transceiver must also be compact, less than 5×5 mm2, to achieve a target size for sensor node and operate over a range of at least one metre to allow communication between widely deployed nodes. Different transceiver topologies are discussed to choose the radio transceiver architecture with specifications that are required in this project. The conventional heterodyne and homodyne topologies are discussed to be unsuitable methods to achieve low power transceiver due to power hungry circuits and their high complexity. The super-regenerative transceiver is also discussed to be unsuitable method because it has a drawback of inherent frequency instability and its characteristics strongly depend on the performance of the super-regenerative oscillator. Instead, a more efficient method of modulation and demodulation such as on-off keying (OOK) is presented. Furthermore, design considerations are shown which can be used to achieve relatively large output voltages for small input powers using an OOK modulation system. This is important because transceiver does not require the use of additional circuits to increase gain or sensitivity and consequently it achieves lower power consumption in a sensor node. This thesis details the circuit design with both a commercial and in-house device technology with ultra-low dc power consumption while retaining adequate RF performance. It details the design of radio building blocks including amplifiers, oscillators, switches and detectors. Furthermore, the circuit integration is presented to achieve a compact transceiver and different circuit topologies to minimize dc power consumption are described. To achieve the sensitivity requirements of receiver, a detector design method with large output voltage is presented. The receiver is measured to have output voltages of 1mVp-p for input powers of -60dBm over a 1 metre operating range while consuming as much as 420μW. The first prototype combines all required blocks using an in-house GaAs MMIC process with commercial pseudomorphic high electron mobility transistor (PHEMT). The OOK radio transceiver successfully operates at the centre frequency of 10GHz for compact antenna and with ultra-low power consumption and shows an output power of -10.4dBm for the transmitter, an output voltage of 1mVp-p at an operating range of 1 metre for the receiver and a total power consumption of 840μW. Based on this prototype, an MMIC radio transceiver at the 24GHz band is also designed to further improve the performance and reduce the physical size with an advanced 50nm gate-length GaAs metamorphic high electron mobility transistor (MHEMT) device technology
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