544 research outputs found

    Fast synchronization 3R burst-mode receivers for passive optical networks

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    This paper gives a tutorial overview on high speed burst-mode receiver (BM-RX) requirements, specific for time division multiplexing passive optical networks, and design issues of such BM-RXs as well as their advanced design techniques. It focuses on how to design BM-RXs with short burst overhead for fast synchronization. We present design principles and circuit architectures of various types of burst-mode transimpedance amplifiers, burst-mode limiting amplifiers and burst-mode clock and data recovery circuits. The recent development of 10 Gb/s BM-RXs is highlighted also including dual-rate operation for coexistence with deployed PONs and on-chip auto reset generation to eliminate external timing-critical control signals provided by a PON medium access control. Finally sub-system integration and state-of-the-art system performance for 10 Gb/s PONs are reviewed

    Efficient and Linear CMOS Power Amplifier and Front-end Design for Broadband Fully-Integrated 28-GHz 5G Phased Arrays

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    Demand for data traffic on mobile networks is growing exponentially with time and on a global scale. The emerging fifth-generation (5G) wireless standard is being developed with millimeter-wave (mm-Wave) links as a key technological enabler to address this growth by a 2020 time frame. The wireless industry is currently racing to deploy mm-Wave mobile services, especially in the 28-GHz band. Previous widely-held perceptions of fundamental propagation limitations were overcome using phased arrays. Equally important for success of 5G is the development of low-power, broadband user equipment (UE) radios in commercial-grade technologies. This dissertation demonstrates design methodologies and circuit techniques to tackle the critical challenge of key phased array front-end circuits in low-cost complementary metal oxide semiconductor (CMOS) technology. Two power amplifier (PA) proof-of-concept prototypes are implemented in deeply scaled 28- nm and 40-nm CMOS processes, demonstrating state-of-the-art linearity and efficiency for extremely broadband communication signals. Subsequently, the 40 nm PA design is successfully embedded into a low-power fully-integrated transmit-receive front-end module. The 28 nm PA prototype in this dissertation is the first reported linear, bulk CMOS PA targeting low-power 5G mobile UE integrated phased array transceivers. An optimization methodology is presented to maximizing power added efficiency (PAE) in the PA output stage at a desired error vector magnitude (EVM) and range to address challenging 5G uplink requirements. Then, a source degeneration inductor in the optimized output stage is shown to further enable its embedding into a two-stage transformer-coupled PA. The inductor helps by broadening inter-stage impedance matching bandwidth, and helping to reduce distortion. Designed and fabricated in 1P7M 28 nm bulk CMOS and using a 1 V supply, the PA achieves +4.2 dBm/9% measured Pout/PAE at −25 dBc EVM for a 250 MHz-wide, 64-QAM orthogonal frequency division multiplexing (OFDM) signal with 9.6 dB peak-to-average power ratio (PAPR). The PA also achieves 35.5%/10% PAE for continuous wave signals at saturation/9.6dB back-off from saturation. To the best of the author’s knowledge, these are the highest measured PAE values among published K- and K a-band CMOS PAs to date. To drastically extend the communication bandwidth in 28 GHz-band UE devices, and to explore the potential of CMOS technology for more demanding access point (AP) devices, the second PA is demonstrated in a 40 nm process. This design supports a signal radio frequency bandwidth (RFBW) >3× the state-of-the-art without degrading output power (i.e. range), PAE (i.e. battery life), or EVM (i.e. amplifier fidelity). The three-stage PA uses higher-order, dual-resonance transformer matching networks with bandwidths optimized for wideband linearity. Digital gain control of 9 dB range is integrated for phased array operation. The gain control is a needed functionality, but it is largely absent from reported high-performance mm-Wave PAs in the literature. The PA is fabricated in a 1P6M 40 nm CMOS LP technology with 1.1 V supply, and achieves Pout/PAE of +6.7 dBm/11% for an 8×100 MHz carrier aggregation 64-QAM OFDM signal with 9.7 dB PAPR. This PA therefore is the first to demonstrate the viability of CMOS technology to address even the very challenging 5G AP/downlink signal bandwidth requirement. Finally, leveraging the developed PA design methodologies and circuits, a low power transmit-receive phased array front-end module is fully integrated in 40 nm technology. In transmit-mode, the front-end maintains the excellent performance of the 40 nm PA: achieving +5.5 dBm/9% for the same 8×100 MHz carrier aggregation signal above. In receive-mode, a 5.5 dB noise figure (NF) and a minimum third-order input intercept point (IIP₃) of −13 dBm are achieved. The performance of the implemented CMOS frontend is comparable to state-of-the-art publications and commercial products that were very recently developed in silicon germanium (SiGe) technologies for 5G communication

    Design of broadband inductor-less RF front-ends with high dynamic range for G.hn

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    System-on-Chip (SoC) was adopted in recent years as one of the solutions to reduce the cost of integrated systems. When the SoC solution started to be used, the final product was actually more expensive due to lower yield. The developments in integrated technology through the years allowed the integration of more components in lesser area with a better yield. Thus, SoCs became a widely used solution to reduced the cost of the final product, integrating into a single-chip the main parts of a system: analog, digital and memory. As integrated technology kept scaling down to allow a higher density of transistors and thus providing more functionality with the same die area, the analog RF parts of the SoC became a bottleneck to cost reduction as inductors occupy a large die area and do not scale down with technology. Hence, the trend moves toward the research and design of inductor-less SoCs that further reduce the cost of the final solution. Also, as the demand for home networking high-data-rates communication systems has increased over the last decade, several standards have been developed to satisfy the requirements of each application, the most popular being wireless local area networks (WLANs) based on the IEEE 802.11 standard. However, poor signal propagation across walls make WLANs unsuitable for high-speed applications such as high-definition in-home video streaming, leading to the development of wired technologies using the existing in-home infrastructure. The ITU-T G.hn recommendation (G.9960 and G.9961) unifies the most widely used wired infrastructures at home (coaxial cables, phone lines and power lines) into a single standard for high-speed data transmission of up to 1 Gb/s. The G.hn recommendation defines a unified networking over power lines, phone lines and coaxial cables with different plans for baseband and RF. The RF-coax bandplan, where this thesis is focused, uses 50 MHz and 100 MHz bandwidth channels with 256 and 512 carriers respectively. The center frequency can range from 350 MHz to 2450 MHz. The recommendation specifies a transmission power limit of 5 dBm for the 50 MHz bandplan and 8~dBm for the 100 MHz bandplan, therefore the maximum transmitted power in each carrier is the same for both bandplans. Due to the nature of an in-home wired environment, receivers that can handle both very large and very small amplitude signals are required; when transmitter and receiver are connected on the same electric outlet there is no channel attenuation and the signal-to-noise-plus-distortion ratio (SNDR) is dominated by the receiver linearity, whereas when transmitter and receiver are several rooms apart channel attenuation is high and the SNDR is dominated by the receiver noise figure. The high dynamic range specifications for these receivers require the use of configurable-gain topologies that can provide both high-linearity and low-noise for different configurations. Thus, this thesis has been aimed at researching high dynamic range broadband inductor-less topologies to be used as the RF front-end for a G.hn receiver complying with the provided specifications. A large part of the thesis has been focused on the design of the input amplifier of the front-end, which is the most critical stage as the noise figure and linearity of the input amplifier define the achievable overall specifications of the whole front-end. Three prototypes has been manufactured using a 65 nm CMOS process: two input RFPGAs and one front-end using the second RFPGA prototype.El "sistema en un chip" (SoC) fue adoptado recientemente como una de las soluciones para reducir el coste de sistemas integrados. Cuando se empezó a utilizar la solución SoC, el producto final era más caro debido al bajo rendimiento de producción. Los avances en tecnología integrada a lo largo de los años han permitido la integración de más componentes en menos área con mejoras en rendimiento. Por lo tanto, SoCs pasó a ser una solución ampliamente utilizada para reducir el coste del producto final, integrando en un único chip las principales partes de un sistema: analógica, digital y memoria. A medida que las tecnologías integradas se reducían en tamaño para permitir una mayor densisdad de transistores y proveer mayor funcionalidad con la misma área, las partes RF analógicas del SoC pasaron a ser la limitación en la reducción de costes ya que los inductores ocupan mucha área y no escalan con la tecnología. Por lo tanto, las tendencias en investigación se mueven hacia el diseño de SoCs sin inductores que todavía reducen más el coste final del producto. También, a medida que la demanda en sistemas de comunicación domésticos de alta velocidad ha crecido a lo largo de la última década, se han desarrollado varios estándares para satisfacer los requisitos de cada aplicación, siendo las redes sin hilos (WLANs) basadas en el estándar IEEE 802.11 las más populares. Sin embargo, una pobre propagación de señal a través de las paredes hacen que las WLANs sean inadecuadas para aplicaciones de alta-velocidad como transmisión de vídeo de alta definición en tiempo real, resultando en el desarrollo de tecnologías con hilos utilizando la infraestructura existente en los domicilios. La recomendación ITU-T G.hn (G.9960 and G.9961) unifica las principales infraestructuras con hilos domésticas (cables coaxiales, línias de teléfono y línias de electricidad) en un sólo estándar para la transmisión de datos hasta 1 Gb/s. La recomendación G.hn define una red unificada sobre línias de electricidad, de teléfono y coaxiales con diferentes esquemas para banda base y RF. El esquema RF-coax en el cual se basa esta tesis, usa canales con un ancho de banda de 50 MHz y 100 MHz con 256 y 512 portadoras respectivamente. La frecuencia centra puede variar desde 350 MHz hasta 2450 MHz. La recomendación especifica un límite en la potencia de transmisión de 5 dBm para el esquema de 50 MHz y 8 dBm para el esquema de 100 MHz, de tal forma que la potencia máxima por portadora es la misma en ambos esquemas. Debido a la estructura de un entorno doméstico con hilos, los receptores deben ser capaces de procesar señales con amplitud muy grande o muy pequeña; cuando transmisor y receptor están conectados en la misma toma eléctrica no hay atenuación de canal y el ratio de señal a rudio más distorsión (SNDR) está dominado por la linealidad del receptor, mientras que cuando transmisor y receptor están separados por varias habitaciones la atenuación es elevada y el SNDR está dominado por la figura de ruido del receptor. Los elevados requisitos de rango dinámico para este tipo de receptores requieren el uso de topologías de ganancia configurable que pueden proporcionar tanto alta linealidad como bajo ruido para diferentes configuraciones. Por lo tanto, esta tesis está encarada a la investigación de topologías sin inductores de banda ancha y elevado rango dinámico para ser usadas a la entrada de un receptor G.hn cumpliendo con las especificaciones proporcionadas. Una gran parte de la tesis se ha centrado en el diseño del amplificador de entrada al ser la etapa más crítica, ya que la figura de ruido y linealidad del amplificador de entrada definen lás máximas especificaciones que el sistema puede conseguir. Se han fabricado 3 prototipos con un proceso CMOS de 65 nm: 2 amplificadores y un sistema completo con amplificador y mezclador.Postprint (published version

    A SAW-Less FDD Receiver with TX Leakage Cancellation in Receive and Transmit Bands

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