Fully-Digital Rail-to-Rail OTA with Sub-1,000 μm2 Area, 250-mV Minimum Supply and nW Power at 150-pF Load in 180nm

A fully-digital operational transconductance amplifier (DIGOTA) architecture for tightly energy-constrained low-cost systems is presented. A 180nm DIGOTA testchip exhibits an area below the 1,000-μm2 wall, and 2.4-nW power under 150pF load, and a minimum supply voltage Vmin of 0.25 V. In the 0.3-0.5 V supply range, DIGOTA improves the areanormalized small (large) signal energy FoM by at least 836X (267X) over prior sub-500mV OTAs, while reducing area by 27-85X. The low-Vmin and nW-power features are shown to enable direct harvesting at the mm scale

Energy-Efficient Amplifiers Based on Quasi-Floating Gate Techniques

Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage, energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example, including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage, ultra-low-power amplifiers can be designed, preserving, at the same time, excellent small-signal and large-signal performance.Agencia Estatal de Investigación PID2019-107258RB-C32Unión Europea PID2019-107258RB-C3

Energy-efficient amplifiers based on quasi-floating gate techniques

Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage ultra low power amplifiers can be designed preserving at the same time excellent small-signal and large-signal performance.This research was funded by AEI/FEDER, grant number PID2019-107258RB-C32

A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS

© 2017 Elsevier Ltd. All rights reserved.A 0.1–5.0 GHz flexible software-defined radio (SDR) receiver with digitally assisted calibration is presented, employing a zero-IF/low-IF reconfigurable architecture for both wideband and narrowband applications. The receiver composes of a main-path based on a current-mode mixer for low noise, a high linearity sub-path based on a voltage-mode passive mixer for out-of-band rejection, and a harmonic rejection (HR) path with vector gain calibration. A dual feedback LNA with “8” shape nested inductor structure, a cascode inverter-based TCA with miller feedback compensation, and a class-AB full differential Op-Amp with Miller feed-forward compensation and QFG technique are proposed. Digitally assisted calibration methods for HR, IIP2 and image rejection (IR) are presented to maintain high performance over PVT variations. The presented receiver is implemented in 65 nm CMOS with 5.4 mm2 core area, consuming 9.6–47.4 mA current under 1.2 V supply. The receiver main path is measured with +5 dB m/+5dBm IB-IIP3/OB-IIP3 and +61dBm IIP2. The sub-path achieves +10 dB m/+18dBm IB-IIP3/OB-IIP3 and +62dBm IIP2, as well as 10 dB RF filtering rejection at 10 MHz offset. The HR-path reaches +13 dB m/+14dBm IB-IIP3/OB-IIP3 and 62/66 dB 3rd/5th-order harmonic rejection with 30–40 dB improvement by the calibration. The measured sensitivity satisfies the requirements of DVB-H, LTE, 802.11 g, and ZigBee.Peer reviewedFinal Accepted Versio

A Balanced Slew-Rate High-Voltage Integrated Bipolar Pulse Generator for Medical Ultrasonic Imaging Applications

This chapter describes the use of silicon-on-insulator (SOI) technology to develop balanced slew-rate pulse generators for medical ultrasound scanners, especially for multi-channel portable systems. Since ultrasonic transducers are usually composed of piezoelectric materials, most of which are capacitive, and the resonant frequency is usually in the order of tens of MHz, it is preferred to convert the high-frequency excited signals into high-voltage pulses to efficiently drive the transducers. In addition, the second harmonic leakage of the high-voltage pulse signal output by the pulse generator needs to be controlled such that the pulse generator can be applied to tissue harmonic imaging. Based on these considerations, the pulse generator architecture with balanced rising and falling edges proposed in this chapter is designed by synthesizing low-power, high-speed level shifters and a high-voltage H-bridge output stage to output high-voltage pulse signals with low harmonic distortion. The entire circuit integrates an 8-channel pulse generator, producing pulse signals >100 Vpp. The rise and fall times of the pulses are within 18.6 and 18.5 ns, respectively. The overall quiescent current is 2 A and the second harmonic distortion is as low as −40 dBc, indicating that the integrated pulse generator can be used in advanced, portable ultrasonic harmonic imaging systems

A 100MHz CMOS wideband IF amplifier

When the data rates of communication systems increase, wideband IF amplifiers are needed. It is also possible to use a single wideband intermediate frequency (IF) amplifier for a radio band with several narrow-band channels of varying strengths. The linearity is then critical, if intermodulation products are not to disturb weak channels. We try to find a topology for this new amplifier application, suitable for integration in a standard CMOS process. To get low distortion, we use an output stage with high linearity, which is further linearized by feedback in a double-nested Miller configuration. A 0.8-μm standard CMOS IF amplifier design with low distortion up to 20 MHz is presented

A Fully-Integrated Reconfigurable Dual-Band Transceiver for Short Range Wireless Communications in 180 nm CMOS

© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.A fully-integrated reconfigurable dual-band (760-960 MHz and 2.4-2.5 GHz) transceiver (TRX) for short range wireless communications is presented. The TRX consists of two individually-optimized RF front-ends for each band and one shared power-scalable analog baseband. The sub-GHz receiver has achieved the maximum 75 dBc 3rd-order harmonic rejection ratio (HRR3) by inserting a Q-enhanced notch filtering RF amplifier (RFA). In 2.4 GHz band, a single-ended-to-differential RFA with gain/phase imbalance compensation is proposed in the receiver. A ΣΔ fractional-N PLL frequency synthesizer with two switchable Class-C VCOs is employed to provide the LOs. Moreover, the integrated multi-mode PAs achieve the output P1dB (OP1dB) of 16.3 dBm and 14.1 dBm with both 25% PAE for sub-GHz and 2.4 GHz bands, respectively. A power-control loop is proposed to detect the input signal PAPR in real-time and flexibly reconfigure the PA's operation modes to enhance the back-off efficiency. With this proposed technique, the PAE of the sub-GHz PA is improved by x3.24 and x1.41 at 9 dB and 3 dB back-off powers, respectively, and the PAE of the 2.4 GHz PA is improved by x2.17 at 6 dB back-off power. The presented transceiver has achieved comparable or even better performance in terms of noise figure, HRR, OP1dB and power efficiency compared with the state-of-the-art.Peer reviewe

Energy-Efficient Wireless Interconnect Design for Non-Destructive Testing (NDT) Applications

A method for non-destructive, wireless testing of integrated circuits(ICs) is presented in this thesis. This system is suitable for applications which require testing after the manufacturing of ICs. According to Moore\u27s Law the number of transistors in an IC doubles every two years, the current probing equipment will also have to reduce its size accordingly which will be difficult after a certain point. The proposed system relies on near field communication in order to transfer data between probe and device under test. The probe and IC will include small antenna and a transceiver circuit. The antenna and the transceiver circuit can be integrated into the device without affecting the real estate and performance. Major advantages of non-destructive probing include no damage to the pads of test chip, higher test frequencies and less maintenance which will lead to higher pin densities. The antenna and transceiver circuit to be incorporated on the test chip are completely CMOS compliant.;The presented system here is a prototype which consists of a transceiver circuit along with an ultra-wideband antenna. The system was implemented in IBM 180nm CMOS process. The transceiver circuit communicates at a high frequency of 21.5GHz which in turn reduces the area consumed by the antenna and the transceiver circuit. The results obtained for our system show that an energy efficient wireless interconnect has been successfully implemented for future non-destructive testing applications