856 research outputs found

    Analytical Models and Artificial Intelligence for Open and Partially Disaggregated Optical Networks

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    Accurate quantum transport modelling and epitaxial structure design of high-speed and high-power In0.53Ga0.47As/AlAs double-barrier resonant tunnelling diodes for 300-GHz oscillator sources

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    Terahertz (THz) wave technology is envisioned as an appealing and conceivable solution in the context of several potential high-impact applications, including sixth generation (6G) and beyond consumer-oriented ultra-broadband multi-gigabit wireless data-links, as well as highresolution imaging, radar, and spectroscopy apparatuses employable in biomedicine, industrial processes, security/defence, and material science. Despite the technological challenges posed by the THz gap, recent scientific advancements suggest the practical viability of THz systems. However, the development of transmitters (Tx) and receivers (Rx) based on compact semiconductor devices operating at THz frequencies is urgently demanded to meet the performance requirements calling from emerging THz applications. Although several are the promising candidates, including high-speed III-V transistors and photo-diodes, resonant tunnelling diode (RTD) technology offers a compact and high performance option in many practical scenarios. However, the main weakness of the technology is currently represented by the low output power capability of RTD THz Tx, which is mainly caused by the underdeveloped and non-optimal device, as well as circuit, design implementation approaches. Indeed, indium phosphide (InP) RTD devices can nowadays deliver only up to around 1 mW of radio-frequency (RF) power at around 300 GHz. In the context of THz wireless data-links, this severely impacts the Tx performance, limiting communication distance and data transfer capabilities which, at the current time, are of the order of few tens of gigabit per second below around 1 m. However, recent research studies suggest that several milliwatt of output power are required to achieve bit-rate capabilities of several tens of gigabits per second and beyond, and to reach several metres of communication distance in common operating conditions. Currently, the shortterm target is set to 5−10 mW of output power at around 300 GHz carrier waves, which would allow bit-rates in excess of 100 Gb/s, as well as wireless communications well above 5 m distance, in first-stage short-range scenarios. In order to reach it, maximisation of the RTD highfrequency RF power capability is of utmost importance. Despite that, reliable epitaxial structure design approaches, as well as accurate physical-based numerical simulation tools, aimed at RF power maximisation in the 300 GHz-band are lacking at the current time. This work aims at proposing practical solutions to address the aforementioned issues. First, a physical-based simulation methodology was developed to accurately and reliably simulate the static current-voltage (IV ) characteristic of indium gallium arsenide/aluminium arsenide (In-GaAs/AlAs) double-barrier RTD devices. The approach relies on the non-equilibrium Green’s function (NEGF) formalism implemented in Silvaco Atlas technology computer-aided design (TCAD) simulation package, requires low computational budget, and allows to correctly model In0.53Ga0.47As/AlAs RTD devices, which are pseudomorphically-grown on lattice-matched to InP substrates, and are commonly employed in oscillators working at around 300 GHz. By selecting the appropriate physical models, and by retrieving the correct materials parameters, together with a suitable discretisation of the associated heterostructure spatial domain through finite-elements, it is shown, by comparing simulation data with experimental results, that the developed numerical approach can reliably compute several quantities of interest that characterise the DC IV curve negative differential resistance (NDR) region, including peak current, peak voltage, and voltage swing, all of which are key parameters in RTD oscillator design. The demonstrated simulation approach was then used to study the impact of epitaxial structure design parameters, including those characterising the double-barrier quantum well, as well as emitter and collector regions, on the electrical properties of the RTD device. In particular, a comprehensive simulation analysis was conducted, and the retrieved output trends discussed based on the heterostructure band diagram, transmission coefficient energy spectrum, charge distribution, and DC current-density voltage (JV) curve. General design guidelines aimed at enhancing the RTD device maximum RF power gain capability are then deduced and discussed. To validate the proposed epitaxial design approach, an In0.53Ga0.47As/AlAs double-barrier RTD epitaxial structure providing several milliwatt of RF power was designed by employing the developed simulation methodology, and experimentally-investigated through the microfabrication of RTD devices and subsequent high-frequency characterisation up to 110 GHz. The analysis, which included fabrication optimisation, reveals an expected RF power performance of up to around 5 mW and 10 mW at 300 GHz for 25 μm2 and 49 μm2-large RTD devices, respectively, which is up to five times higher compared to the current state-of-the-art. Finally, in order to prove the practical employability of the proposed RTDs in oscillator circuits realised employing low-cost photo-lithography, both coplanar waveguide and microstrip inductive stubs are designed through a full three-dimensional electromagnetic simulation analysis. In summary, this work makes and important contribution to the rapidly evolving field of THz RTD technology, and demonstrates the practical feasibility of 300-GHz high-power RTD devices realisation, which will underpin the future development of Tx systems capable of the power levels required in the forthcoming THz applications

    Optimisation for Optical Data Centre Switching and Networking with Artificial Intelligence

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    Cloud and cluster computing platforms have become standard across almost every domain of business, and their scale quickly approaches O(106)\mathbf{O}(10^6) servers in a single warehouse. However, the tier-based opto-electronically packet switched network infrastructure that is standard across these systems gives way to several scalability bottlenecks including resource fragmentation and high energy requirements. Experimental results show that optical circuit switched networks pose a promising alternative that could avoid these. However, optimality challenges are encountered at realistic commercial scales. Where exhaustive optimisation techniques are not applicable for problems at the scale of Cloud-scale computer networks, and expert-designed heuristics are performance-limited and typically biased in their design, artificial intelligence can discover more scalable and better performing optimisation strategies. This thesis demonstrates these benefits through experimental and theoretical work spanning all of component, system and commercial optimisation problems which stand in the way of practical Cloud-scale computer network systems. Firstly, optical components are optimised to gate in ≈500ps\approx 500 ps and are demonstrated in a proof-of-concept switching architecture for optical data centres with better wavelength and component scalability than previous demonstrations. Secondly, network-aware resource allocation schemes for optically composable data centres are learnt end-to-end with deep reinforcement learning and graph neural networks, where 3×3\times less networking resources are required to achieve the same resource efficiency compared to conventional methods. Finally, a deep reinforcement learning based method for optimising PID-control parameters is presented which generates tailored parameters for unseen devices in O(10−3)s\mathbf{O}(10^{-3}) s. This method is demonstrated on a market leading optical switching product based on piezoelectric actuation, where switching speed is improved >20%>20\% with no compromise to optical loss and the manufacturing yield of actuators is improved. This method was licensed to and integrated within the manufacturing pipeline of this company. As such, crucial public and private infrastructure utilising these products will benefit from this work

    Beam scanning by liquid-crystal biasing in a modified SIW structure

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    A fixed-frequency beam-scanning 1D antenna based on Liquid Crystals (LCs) is designed for application in 2D scanning with lateral alignment. The 2D array environment imposes full decoupling of adjacent 1D antennas, which often conflicts with the LC requirement of DC biasing: the proposed design accommodates both. The LC medium is placed inside a Substrate Integrated Waveguide (SIW) modified to work as a Groove Gap Waveguide, with radiating slots etched on the upper broad wall, that radiates as a Leaky-Wave Antenna (LWA). This allows effective application of the DC bias voltage needed for tuning the LCs. At the same time, the RF field remains laterally confined, enabling the possibility to lay several antennas in parallel and achieve 2D beam scanning. The design is validated by simulation employing the actual properties of a commercial LC medium

    Integration of hybrid networks, AI, Ultra Massive-MIMO, THz frequency, and FBMC modulation toward 6g requirements : A Review

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    The fifth-generation (5G) wireless communications have been deployed in many countries with the following features: wireless networks at 20 Gbps as peak data rate, a latency of 1-ms, reliability of 99.999%, maximum mobility of 500 km/h, a bandwidth of 1-GHz, and a capacity of 106 up to Mbps/m2. Nonetheless, the rapid growth of applications, such as extended/virtual reality (XR/VR), online gaming, telemedicine, cloud computing, smart cities, the Internet of Everything (IoE), and others, demand lower latency, higher data rates, ubiquitous coverage, and better reliability. These higher requirements are the main problems that have challenged 5G while concurrently encouraging researchers and practitioners to introduce viable solutions. In this review paper, the sixth-generation (6G) technology could solve the 5G limitations, achieve higher requirements, and support future applications. The integration of multiple access techniques, terahertz (THz), visible light communications (VLC), ultra-massive multiple-input multiple-output ( μm -MIMO), hybrid networks, cell-free massive MIMO, and artificial intelligence (AI)/machine learning (ML) have been proposed for 6G. The main contributions of this paper are a comprehensive review of the 6G vision, KPIs (key performance indicators), and advanced potential technologies proposed with operation principles. Besides, this paper reviewed multiple access and modulation techniques, concentrating on Filter-Bank Multicarrier (FBMC) as a potential technology for 6G. This paper ends by discussing potential applications with challenges and lessons identified from prior studies to pave the path for future research

    Stokes Vector Modulation of Optical Signals; Coherence, Noise, and Digital Signal Processing

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    Stokes vector modulation (SVM) is a method of encoding information onto an optical wave by controlling its amplitude and its state of polarization (SOP). SVM offers the potential to achieve the high spectral efficiency of multi-dimensional symbols using a power-efficient, direct-detection receiver. Combining the two independent degrees of freedom representing polarization with one representing amplitude, SVM symbols are defined in a 3-D space of Stokes vectors, where vector length represents the amplitude and altitude/azimuth angles represent the SOP. The recoverable information content is fundamentally limited by the noise on the received signal, which may include shot noise due to photon-counting, electrical circuit noise, amplified spontaneous emission due to optical amplifiers, and self-interference of low-coherence light sources. Some of these noise terms do not obey the usual approximation of additive white Gaussian noise, and some may not be isotropic in Stokes space. Taking these complexities into account, I will theoretically analyze and compare several recently-proposed SVM receiver designs under different conditions of source coherence and channel impairments. For the most promising options, I will design symbol constellations and receiver decision strategies suitable for maximal data throughput. Construction and operation of apparatus to experimentally verify bit-error performance up to at least 10 Gsym/s with different sources, constellations, fiber spans, and receivers will be an essential component of the work. Possible extensions may include simultaneous modulation of the degree of polarization, to create a 4-D symbol space. Further, I will develop and characterize a system based on a cubic constellation for 8-SVM, using an off-the-shelf integrated modulator driven with simple bias points and data waveforms. Symbol error rates (SER) and bit error rates BER) are measured up to 30 Gb/s, and analysis of the symbol errors reveals a significant effect of inter-symbol interference. Finally, I will theoretically and experimentally demonstrate a novel adaptation of independent component analysis (ICA) for compensation of both cross-polarization and inter-symbol interference in a direct-detection link using Stokes vector modulation (SVM). SVM systems suffer from multiple simultaneous impairments that can be difficult to resolve with conventional optical channel DSP techniques. The proposed method is based on a six-dimensional adaptation of ICA that simultaneously derotates the SVM constellation, corrects distortion of constellation shape, and mitigates inter-symbol interference (ISI) at high symbol rates. Experimental results at 7.5 Gb/s and 15Gb/s show that the newly-developed ICA-based equalizer achieves power penalties below ~1 dB, compared to the ideal theoretical bit-error rate (BER) curves. At 30-Gb/s, where ISI is more severe, ICA still enables polarization de-rotation and BE

    Probing quantum devices with radio-frequency reflectometry

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    Many important phenomena in quantum devices are dynamic, meaning that they cannot be studied using time-averaged measurements alone. Experiments that measure such transient effects are collectively known as fast readout. One of the most useful techniques in fast electrical readout is radio-frequency reflectometry, which can measure changes in impedance (both resistive and reactive) even when their duration is extremely short, down to a microsecond or less. Examples of reflectometry experiments, some of which have been realized and others so far only proposed, include projective measurements of qubits and Majorana devices for quantum computing, real-time measurements of mechanical motion, and detection of non-equilibrium temperature fluctuations. However, all of these experiments must overcome the central challenge of fast readout: the large mismatch between the typical impedance of quantum devices (set by the resistance quantum) and of transmission lines (set by the impedance of free space). Here, we review the physical principles of radio-frequency reflectometry and its close cousins, measurements of radio-frequency transmission and emission. We explain how to optimize the speed and sensitivity of a radio-frequency measurement and how to incorporate new tools, such as superconducting circuit elements and quantum-limited amplifiers into advanced radio-frequency experiments. Our aim is threefold: to introduce the readers to the technique, to review the advances to date, and to motivate new experiments in fast quantum device dynamics. Our intended audience includes experimentalists in the field of quantum electronics who want to implement radio-frequency experiments or improve them, together with physicists in related fields who want to understand how the most important radio-frequency measurements work
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