184 research outputs found

    Doctor of Philosophy

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    dissertationHigh speed wireless communication systems (e.g., long-term evolution (LTE), Wi-Fi) operate with high bandwidth and large peak-to-average power ratios (PAPRs). This is largely due to the use of orthogonal frequency division multiplexing (OFDM) modulation that is prevalent to maximize the spectral efficiency of the communication system. The power amplifier (PA) in the transmitter is the dominant energy consumer in the radio, largely because of the PAPR of the input signal. To reduce the energy consumption of the PA an amplifier that simultaneously achieves high efficiency and high linearity. Furthermore, to lower the cost for high volume production, it is desirable to achieve a complete System-on-Chip (SoC) integration. Linear amplifiers (e.g., Class-A, -B, -AB) are inefficient when amplifying signals with large PAPR that is associated by high peak-to-average modulation techniques such as LTE. OFDM. Switching amplifiers (e.g., Class-D, -E, -F) are very promising due to their high efficiency when compared to their linear amplifier counterparts. Linearization techniques for switching amplifiers have been intensively investigated due to their limited sensitivity to the input amplitude of the signal. Deep-submicron CMOS technology is mostly utilized for logic circuitry, and the Moore's law scaling of CMOS optimizes transistors to operate as high-speed and low-loss switches rather than high gain transistors. Hence, it is advantageous to use transistors in switching mode as switching amplifies and use high-speed digital logic circuitry to implement linearization systems and circuitry. In this work, several linearization architectures are investigated and demonstrated. An envelope elimination and restoration (EER) transmitter that comprises a class-E power amplifier and a 10-bit digital-to-analog converter (DAC) controlled current modulator is investigated. A pipelined switched-capacitor DAC is designed to control an open-loop transconductor that operates as a current modulator, modulating the amplitude of the current supplied to a class-E PA. Such a topology allows for increased filtering of the quantization noise that is problematic in most digital PAs (DPA). The proposed quadrature and multiphase architecture can avoid the bandwidth expansion and delay mismatch associated with polar PAs. The multiphase switched capacitor power amplifier (SCPA) was proposed after the quadrature SCPA and it significantly improves the power efficiency

    Linear Predistortion-less MIMO Transmitters

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    Highly efficient linear CMOS power amplifiers for wireless communications

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    The rapidly expanding wireless market requires low cost, high integration and high performance of wireless communication systems. CMOS technology provides benefits of cost effectiveness and higher levels of integration. However, the design of highly efficient linear CMOS power amplifier that meets the requirement of advanced communication standards is a challenging task because of the inherent difficulties in CMOS technology. The objective of this research is to realize PAs for wireless communication systems that overcoming the drawbacks of CMOS process, and to develop design approaches that satisfying the demands of the industry. In this dissertation, a cascode bias technique is proposed for improving linearity and reliability of the multi-stage cascode CMOS PA. In addition, to achieve load variation immunity characteristic and to enhance matching and stability, a fully-integrated balanced PA is implemented in a 0.18-m CMOS process. A triple-mode balanced PA using switched quadrature coupler is also proposed, and this work saved a large amount of quiescent current and further improved the efficiency in the back-off power. For the low losses and a high quality factor of passive output combining, a transformer-based quadrature coupler was implemented using integrated passive device (IPD) process. Various practical approaches for linear CMOS PA are suggested with the verified results, and they demonstrate the potential PA design approach for WCDMA applications using a standard CMOS technology.PhDCommittee Chair: Kenney, J. Stevenson; Committee Member: Jongman Kim; Committee Member: Kohl, Paul A.; Committee Member: Kornegay, Kevin T.; Committee Member: Lee, Chang-H

    Analog dithering techniques for highly linear and efficient transmitters

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    The current thesis is about investigation of new methods and techniques to be able to utilize the switched mode amplifiers, for linear and efficient applications. Switched mode amplifiers benefit from low overlap between the current and voltage wave forms in their output terminals, but they seriously suffer from nonlinearity. This makes it impossible to use them to amplify non-constant envelope message signals, where very high linearity is expected. In order to do that, dithering techniques are studied and a full linearity analysis approach is developed, by which the linearity performance of the dithered amplifier can be analyzed, based on the dithering level and frequency. The approach was based on orthogonalization of the equivalent nonlinearity and is capable of prediction of both co-channel and adjacent channel nonlinearity metrics, for a Gaussian complex or real input random signal. Behavioral switched mode amplifier models are studied and new models are developed, which can be utilized to predict the nonlinear performance of the dithered power amplifier, including the nonlinear capacitors effects. For HFD application, self-oscillating and asynchronous sigma delta techniques are currently used, as pulse with modulators (PWM), to encode a generic RF message signal, on the duty cycle of an output pulse train. The proposed models and analysis techniques were applied to this architecture in the first phase, and the method was validated with measurement on a prototype sample, realized in 65 nm TSMC CMOS technology. Afterwards, based on the same dithering phenomenon, a new linearization technique was proposed, which linearizes the switched mode class D amplifier, and at the same time can reduce the reactive power loss of the amplifier. This method is based on the dithering of the switched mode amplifier with frequencies lower than the band-pass message signal and is called low frequency dithering (LFD). To test this new technique, two test circuits were realized and the idea was applied to them. Both of the circuits were of the hard nonlinear type (class D) and are integrated CMOS and discrete LDMOS technologies respectively. The idea was successfully tested on both test circuits and all of the linearity metric predictions for a digitally modulated RF signal and a random signal were compared to the measurements. Moreover a search method to find the optimum dither frequency was proposed and validated. Finally, inspired by averaging interpretation of the dithering phenomenon, three new topologies were proposed, which are namely DLM, RF-ADC and area modulation power combining, which are all nonlinear systems linearized with dithering techniques. A new averaging method was developed and used for analysis of a Gilbert cell mixer topology, which resulted in a closed form relationship for the conversion gain, for long channel devices

    A 40-GHz Load Modulated Balanced Power Amplifier using Unequal Power Splitter and Phase Compensation Network in 45-nm SOI CMOS

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    © 2023 IEEE - All rights reserved. This is the accepted manuscript version of an article which has been published in final form at https://doi.org/10.1109/TCSI.2023.3282731 ​​​​​​​In this work, a ten-way power-combined poweramplifier is designed using a load modulated balanced amplifier(LMBA)-based architecture. To provide the required magnitudeand phase controls between the main and control-signal paths ofthe LMBA, an unequal power splitter and a phase compensationnetwork are proposed. As proof of concept, the designed poweramplifier is implemented in a 45-nm SOI CMOS process. At 40GHz, it delivers a 25.1 dBm Psat with a peak power-addedefficiency (PAE) of 27.9%. At 6-dB power back-off level, itachieves 1.39 times drain efficiency enhancement over an idealClass-B power amplifier. Using a 200-MHz single-carrier 64-QAMsignal, the designed amplifier delivers an average output power of16.5 dBm with a PAE of 13.1% at an EVMrms of -23.9 dB andACPR of -25.3 dBc. The die size, including all testing pads, is only1.92 mm2. To the best of the authors’ knowledge, compared withthe other recently published silicon-based LMBAs, this designachieves the highest Psat.Peer reviewe

    A Review of Watt-Level CMOS RF Power Amplifiers

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    A 39-GHz Doherty-Like Power Amplifier with 22-dBm Output Power and 21% Power-Added Efficiency at 6-dB Power Back-Off

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    © 2024, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. This is the accepted manuscript version of a conference paper which has been published in final form at https://doi.org/10.1109/JETCAS.2024.3351075The design of a Doherty-like power amplifier for millimetre-wave (mm-wave) applications is presented in this work. The designed power amplifier employs a novel symmetrical loadmodulated balanced amplifier (S-LMBA) architecture. This design is advantageous in minimizing the undesired impedance interaction often encountered in the classic LMBA approach. Such interactions are typically due to the use of a non-50 Ω load at the isolation port of the output quadrature coupler. Moreover, magnitude and phase control networks are carefully designed to generate the specific magnitude and phase information for the designed S-LMBA. To demonstrate the proposed ideas, the SLMBA is fabricated in a 45-nm CMOS SOI technology. At 39 GHz, a 22.1 dBm saturated output power (Psat) with a maximum poweradded efficiency (PAE) of 25.7% is achieved. In addition, 1.68 times drain efficiency enhancement is obtained over an ideal Class-B operation, when the designed S-LMBA is operated at 6 dB power back-off. An average output power of 13.1 dBm with a PAE of 14.4% at an error vector magnitude (EVMrms) above -22.5 dB and adjacent channel power ratio (ACPR) of -23 dBc is also achieved, when a 200 MHz single carrier 64-quadratureamplitude- modulation (QAM) signal is used. Including all testing pads, the footprint of the designed S-LMBA is only 1.56 mm2.Peer reviewe

    Wideband CMOS Data Converters for Linear and Efficient mmWave Transmitters

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    With continuously increasing demands for wireless connectivity, higher\ua0carrier frequencies and wider bandwidths are explored. To overcome a limited transmit power at these higher carrier frequencies, multiple\ua0input multiple output (MIMO) systems, with a large number of transmitters\ua0and antennas, are used to direct the transmitted power towards\ua0the user. With a large transmitter count, each individual transmitter\ua0needs to be small and allow for tight integration with digital circuits. In\ua0addition, modern communication standards require linear transmitters,\ua0making linearity an important factor in the transmitter design.In this thesis, radio frequency digital-to-analog converter (RF-DAC)-based transmitters are explored. They shift the transition from digital\ua0to analog closer to the antennas, performing both digital-to-analog\ua0conversion and up-conversion in a single block. To reduce the need for\ua0computationally costly digital predistortion (DPD), a linear and wellbehaved\ua0RF-DAC transfer characteristic is desirable. The combination\ua0of non-overlapping local oscillator (LO) signals and an expanding segmented\ua0non-linear RF-DAC scaling is evaluated as a way to linearize\ua0the transmitter. This linearization concept has been studied both for\ua0the linearization of the RF-DAC itself and for the joint linearization of\ua0the cascaded RF-DAC-based modulator and power amplifier (PA) combination.\ua0To adapt the linearization, observation receivers are needed.\ua0In these, high-speed analog-to-digital converters (ADCs) have a central\ua0role. A high-speed ADC has been designed and evaluated to understand\ua0how concepts used to increase the sample rate affect the dynamic performance
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