Receiver Front-Ends in CMOS with Ultra-Low Power Consumption

Historically, research on radio communication has focused on improving range and data rate. In the last decade, however, there has been an increasing demand for low power and low cost radios that can provide connectivity with small devices around us. They should be able to offer basic connectivity with a power consumption low enough to function extended periods of time on a single battery charge, or even energy scavenged from the surroundings. This work is focused on the design of ultra-low power receiver front-ends intended for a receiver operating in the 2.4GHz ISM band, having an active power consumption of 1mW and chip area of 1mm². Low power consumption and small size make it hard to achieve good sensitivity and tolerance to interference. This thesis starts with an introduction to the overall receiver specifications, low power radio and radio standards, front-end and LO generation architectures and building blocks, followed by the four included papers. Paper I demonstrates an inductorless front-end operating at 915MHz, including a frequency divider for quadrature LO generation. An LO generator operating at 2.4GHz is shown in Paper II, enabling a front-end operating above 2GHz. Papers III and IV contain circuits with combined front-end and LO generator operating at or above the full 2.45GHz target frequency. They use VCO and frequency divider topologies that offer efficient operation and low quadrature error. An efficient passive-mixer design with improved suppression of interference, enables an LNA-less design in Paper IV capable of operating without a SAW-filter

Advances in Solid State Circuit Technologies

This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields

RF MEMS reference oscillators platform for wireless communications

A complete platform for RF MEMS reference oscillator is built to replace bulky quartz from mobile devices, thus reducing size and cost. The design targets LTE transceivers. A low phase noise 76.8 MHz reference oscillator is designed using material temperature compensated AlN-on-silicon resonator. The thesis proposes a system combining piezoelectric resonator with low loading CMOS cross coupled series resonance oscillator to reach state-of-the-art LTE phase noise specifications. The designed resonator is a two port fundamental width extensional mode resonator. The resonator characterized by high unloaded quality factor in vacuum is designed with low temperature coefficient of frequency (TCF) using as compensation material which enhances the TCF from - 3000 ppm to 105 ppm across temperature ranges of -40˚C to 85˚C. By using a series resonant CMOS oscillator, phase noise of -123 dBc/Hz at 1 kHz, and -162 dBc/Hz at 1MHz offset is achieved. The oscillator’s integrated RMS jitter is 106 fs (10 kHz–20 MHz), consuming 850 μA, with startup time is 250μs, achieving a Figure-of-merit (FOM) of 216 dB. Electronic frequency compensation is presented to further enhance the frequency stability of the oscillator. Initial frequency offset of 8000 ppm and temperature drift errors are combined and further addressed electronically. A simple digital compensation circuitry generates a compensation word as an input to 21 bit MASH 1 -1-1 sigma delta modulator incorporated in RF LTE fractional N-PLL for frequency compensation. Temperature is sensed using low power BJT band-gap front end circuitry with 12 bit temperature to digital converter characterized by a resolution of 0.075˚C. The smart temperature sensor consumes only 4.6 μA. 700 MHz band LTE signal proved to have the stringent phase noise and frequency resolution specifications among all LTE bands. For this band, the achieved jitter value is 1.29 ps and the output frequency stability is 0.5 ppm over temperature ranges from -40˚C to 85˚C. The system is built on 32nm CMOS technology using 1.8V IO device

Efficient High-Performance Millimeter-Wave Front-End Integrated Circuit Designs and Techniques in SiGe BiCMOS

This dissertation presents various “efficient” design techniques for mm-wave front-end integrated circuits in regards to dc power, bandwidth, and chip size. The ideas, while suitable for different CMOS/BiCMOS processes, were implemented using a 0.18-μm SiGe BiCMOS process. The proposed techniques are validated through the actual implementations of several building blocks constituting two different front-end sections: a V-band OOK/pulse transceiver front-end and a concurrent K-/V-band receiver front-end, where K-band ranges from 18 to 27 GHz and V-band from 40 to 75 GHz. As one of the constituent components in the V-band pulse transmitter, a 60-GHz active OOK/pulse modulator has been designed with an emphasis on the enhancement in the ON/OFF isolation. Having a decent gain (higher than 10 dB), the designed modulator can also be used as a driver stage, which can save the chip area and possibly the dc power consumption compared to the combination of a switch-based passive modulator and a drive amplifier. For the receiver front-end, a wideband V-band low-noise amplifier (LNA) has been designed. Employing a wideband gain shaping technique through two T-type inter-stage matching networks, the designed LNA features very high gain-bandwidth product compared to the conventional gain-staggered wideband amplifier designs for a given dc power consumption. For the concurrent K-/V-band receiver front-end, a low-noise and variable gain stages have been designed. As the first component of the receiver chain, a concurrent dual-band LNA has been designed within a similar footprint required for a single-band amplifier operating either at K- or V-band. The most significant direct intermodulation (IM) product and harmonics are suppressed by a simple rejection network between the input and cascode devices of the 1st stage. This network also plays a crucial role in achieving dual-band input matching through Miller effect. For amplitude control purposes in the RF stage, a variable gain amplifier (VGA) operating concurrently at K- and V-bands has been developed starting from a wideband amplifier design. By replacing the inductors in the wideband design with the transformer-coupled resonators (TCRs), the critical direct IM products can be suppressed without increasing the active chip area. Gain tuning is achieved by conventional current steering, but a new technique is applied to reduce phase variation in the course of gain tuning process, which is one of the most critical concerns, especially in phased array systems

Radio-frequency integrated-circuit design for CMOS single-chip UWB systems

Low cost, a high-integrated capability, and low-power consumption are the basic requirements for ultra wide band (UWB) system design in order for the system to be adopted in various commercial electronic devices in the near future. Thus, the highly integrated transceiver is trended to be manufactured by companies using the latest silicon based complimentary metal-oxide-silicon (CMOS) processes. In this dissertation, several new structural designs are proposed, which provide solutions for some crucial RF blocks in CMOS for UWB for commercial applications. In this dissertation, there is a discussion of the development, as well as an illustration, of a fully-integrated ultra-broadband transmit/receive (T/R) switch which uses nMOS transistors with deep n-well in a standard 0.18-μm CMOS process. The new CMOS T/R switch exploits patterned-ground-shield on-chip inductors together with MOSFET’s parasitic capacitances in order to synthesize artificial transmission lines which result in low insertion loss over an extremely wide bandwidth. Within DC-10 GHz, 10-18 GHz, and 18-20 GHz, the developed CMOS T/R switch exhibits insertion loss of less than 0.7, 1.0 and 2.5 dB and isolation between 32-60 dB, 25-32 dB, and 25-27 dB, respectively. The measured 1-dB power compression point and input third-order intercept point reach as high as 26.2 and 41 dBm, respectively. Further, there is a discussion and demonstration of a tunable Carrier-based Time-gated UWB transmitter in this dissertation which uses a broadband multiplier, a novel fully integrated single pole single throw (SPST) switch designed by the CMOS process, where a tunable instantaneous bandwidth from 500 MHz to 4 GHz is exhibited by adjusting the width of the base band impulses in time domain. The SPST switch utilizes the synthetic transmission line concept and multiple reflections technique in order to realize a flat insertion loss less than 1.5 dB from 3.1 GHz to 10.6 GHz and an extremely high isolation of more than 45 dB within this frequency range. A fully integrated complementary LC voltage control oscillator (VCO), designed with a tunable buffer, operates from 4.6 GHz to 5.9 GHz. The measurement results demonstrate that the integrated VCO has a very low phase noise of –117 dBc/ Hz at 1 MHz offset. The fully integrated VCO achieves a very high figure of merit (FOM) of 183.5 using standard CMOS process while consuming 4 mA DC current

Time interleaved counter analog to digital converters

The work explores extending time interleaving in A/D converters, by applying a high-level of parallelism to one of the slowest and simplest types of data-converters, the counter ADC. The motivation for the work is to realise high-performance re-configurable A/D converters for use in multi-standard and multi-PHY communication receivers with signal bandwidths in the 10s to 100s of MHz. The counter ADC requires only a comparator, a ramp signal, and a digital counter, where the comparator compares the sampled input against all possible quantisation levels sequentially. This work explores arranging counter ADCs in large time-interleaved arrays, building a Time Interleaved Counter (TIC) ADC. The key to realising a TIC ADC is distributed sampling and a global multi-phase ramp generator realised with a novel figure-of-8 rotating resistor ring. Furthermore Counter ADCs allow for re-configurability between effective sampling rate and resolution due to their sequential comparison of reference levels in conversion. A prototype TIC ADC of 128-channels was fabricated and measured in 0.13μm CMOS technology, where the same block can be configured to operate as a 7-bit 1GS/s, 8-bit 500MS/s, or 9-bit 250MS/s dataconverter. The ADC achieves a sub 400fJ/step FOM in all modes of configuration