On Timing Model Extraction and Hierarchical Statistical Timing Analysis

In this paper, we investigate the challenges to apply Statistical Static Timing Analysis (SSTA) in hierarchical design flow, where modules supplied by IP vendors are used to hide design details for IP protection and to reduce the complexity of design and verification. For the three basic circuit types, combinational, flip-flop-based and latch-controlled, we propose methods to extract timing models which contain interfacing as well as compressed internal constraints. Using these compact timing models the runtime of full-chip timing analysis can be reduced, while circuit details from IP vendors are not exposed. We also propose a method to reconstruct the correlation between modules during full-chip timing analysis. This correlation can not be incorporated into timing models because it depends on the layout of the corresponding modules in the chip. In addition, we investigate how to apply the extracted timing models with the reconstructed correlation to evaluate the performance of the complete design. Experiments demonstrate that using the extracted timing models and reconstructed correlation full-chip timing analysis can be several times faster than applying the flattened circuit directly, while the accuracy of statistical timing analysis is still well maintained

Hardware/software approaches for reducing the process variation impact on instruction fetches

Cataloged from PDF version of article.As technology moves towards finer process geometries, it is becoming extremely difficult to control critical physical parameters such as channel length, gate oxide thickness, and dopant ion concentration. Variations in these parameters lead to dramatic variations in access latencies in Static Random Access Memory (SRAM) devices. This means that different lines of the same cache may have different access latencies. A simple solution to this problem is to adopt the worst-case latency paradigm. While this egalitarian cache management is simple, it may introduce significant performance overhead during instruction fetches when both address translation (instruction Translation Lookaside Buffer (TLB) access) and instruction cache access take place, making this solution infeasible for future high-performance processors. In this study, we first propose some hardware and software enhancements and then, based on those, investigate several techniques to mitigate the effect of process variation on the instruction fetch pipeline stage in modern processors. For address translation, we study an approach that performs the virtual-to-physical page translation once, then stores it in a special register, reusing it as long as the execution remains on the same instruction page. To handle varying access latencies across different instruction cache lines, we annotate the cache access latency of instructions within themselves to give the circuitry a hint about how long to wait for the next instruction to become available

Non-invasive IC tomography using spatial correlations

We introduce a new methodology for post-silicon characterization of the gate-level variations in a manufactured Integrated Circuit (IC). The estimated characteristics are based on the power and the delay measurements that are affected by the process variations. The power (delay) variations are spatially correlated. Thus, there exists a basis in which variations are sparse. The sparse representation suggests using the L1-regularization (the compressive sensing theory). We show how to use the compressive sensing theory to improve post-silicon characterization. We also address the problem by adding spatial constraints directly to the traditional L2-minimization. The proposed methodology is fast, inexpensive, non-invasive, and applicable to legacy designs. Noninvasive IC characterization has a range of emerging applications, including post-silicon optimization, IC identification, and variations' modeling/simulations. The evaluation results on standard benchmark circuits show that, in average, the gate level characteristics estimation accuracy can be improved by more than two times using the proposed methods

Strain-Engineered MOSFETs

This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization