Low-Power Slew-Rate Boosting Based 12-Bit Pipeline ADC Utilizing Forecasting Technique in the Sub-ADCS

The dissertation presents architecture and circuit solutions to improve the power efficiency of high-speed 12-bit pipelined ADCs in advanced CMOS technologies. First, the 4.5bit algorithmic pipelined front-end stage is proposed. It is shown that the algorithmic pipelined ADC requires a simpler sub-ADC and shows lower sensitivity to the Multiplying DAC (MDAC) errors and smaller area and power dissipation in comparison to the conventional multi-bit per stage pipelined ADC. Also, it is shown that the algorithmic pipelined architecture is more tolerant to capacitive mismatch for the same input-referred thermal noise than the conventional multi-bit per stage architecture. To take full advantage of these properties, a modified residue curve for the pipelined ADC is proposed. This concept introduces better linearity compared with the conventional residue curve of the pipelined ADC; this approach is particularly attractive for the digitization of signals with large peak to average ratio such as OFDM coded signals. Moreover, the minimum total required transconductance for the different architectures of the 12-bit pipelined ADC are computed. This helps the pipelined ADC designers to find the most power-efficient architecture between different topologies based on the same input-referred thermal noise. By employing this calculation, the most power efficient architecture for realizing the 12-bit pipelined ADC is selected. Then, a technique for slew-rate (SR) boosting in switched-capacitor circuits is proposed in the order to be utilized in the proposed 12-bit pipelined ADC. This technique makes use of a class-B auxiliary amplifier that generates a compensating current only when high slew-rate is demanded by large input signal. The proposed architecture employs simple circuitry to detect the need of injecting current at the output load by implementing a Pre-Amp followed by a class-B amplifier, embedded with a pre-defined hysteresis, in parallel with the main amplifier to boost its slew phase. The proposed solution requires small static power since it does not need high dc-current at the output stage of the main amplifier. The proposed technique is suitable for high-speed low-power multi-bit/stage pipelined ADC applications. Both transistor-level simulations and experimental results in TSMC 40nm technology reduces the slew-time for more than 45% and shorts the 1% settling time by 28% when used in a 4.5bit/stage pipelined ADC; power consumption increases by 20%. In addition, the technique of inactivating and disconnecting of the sub-ADC’s comparators by forecasting the sign of the sampled input voltage is proposed in the order to reduce the dynamic power consumption of the sub-ADCs in the proposed 12-bit pipelined ADC. This technique reduces the total dynamic power consumption more than 46%. The implemented 12-bit pipelined ADC achieves an SNDR/SFDR of 65.9/82.3 dB at low input frequencies and a 64.1/75.5 dB near Nyquist frequency while running at 500 MS/s. The pipelined ADC prototype occupies an active area of 0.9 mm^2 and consumes 18.16 mW from a 1.1 V supply, resulting in a figure of merit (FOM) of 22.4 and a 27.7 fJ/conversion-step at low-frequency and Nyquist frequency, respectively

Low-Power Slew-Rate Boosting Based 12-Bit Pipeline ADC Utilizing Forecasting Technique in the Sub-ADCS

The dissertation presents architecture and circuit solutions to improve the power efficiency of high-speed 12-bit pipelined ADCs in advanced CMOS technologies. First, the 4.5bit algorithmic pipelined front-end stage is proposed. It is shown that the algorithmic pipelined ADC requires a simpler sub-ADC and shows lower sensitivity to the Multiplying DAC (MDAC) errors and smaller area and power dissipation in comparison to the conventional multi-bit per stage pipelined ADC. Also, it is shown that the algorithmic pipelined architecture is more tolerant to capacitive mismatch for the same input-referred thermal noise than the conventional multi-bit per stage architecture. To take full advantage of these properties, a modified residue curve for the pipelined ADC is proposed. This concept introduces better linearity compared with the conventional residue curve of the pipelined ADC; this approach is particularly attractive for the digitization of signals with large peak to average ratio such as OFDM coded signals. Moreover, the minimum total required transconductance for the different architectures of the 12-bit pipelined ADC are computed. This helps the pipelined ADC designers to find the most power-efficient architecture between different topologies based on the same input-referred thermal noise. By employing this calculation, the most power efficient architecture for realizing the 12-bit pipelined ADC is selected. Then, a technique for slew-rate (SR) boosting in switched-capacitor circuits is proposed in the order to be utilized in the proposed 12-bit pipelined ADC. This technique makes use of a class-B auxiliary amplifier that generates a compensating current only when high slew-rate is demanded by large input signal. The proposed architecture employs simple circuitry to detect the need of injecting current at the output load by implementing a Pre-Amp followed by a class-B amplifier, embedded with a pre-defined hysteresis, in parallel with the main amplifier to boost its slew phase. The proposed solution requires small static power since it does not need high dc-current at the output stage of the main amplifier. The proposed technique is suitable for high-speed low-power multi-bit/stage pipelined ADC applications. Both transistor-level simulations and experimental results in TSMC 40nm technology reduces the slew-time for more than 45% and shorts the 1% settling time by 28% when used in a 4.5bit/stage pipelined ADC; power consumption increases by 20%. In addition, the technique of inactivating and disconnecting of the sub-ADC’s comparators by forecasting the sign of the sampled input voltage is proposed in the order to reduce the dynamic power consumption of the sub-ADCs in the proposed 12-bit pipelined ADC. This technique reduces the total dynamic power consumption more than 46%. The implemented 12-bit pipelined ADC achieves an SNDR/SFDR of 65.9/82.3 dB at low input frequencies and a 64.1/75.5 dB near Nyquist frequency while running at 500 MS/s. The pipelined ADC prototype occupies an active area of 0.9 mm^2 and consumes 18.16 mW from a 1.1 V supply, resulting in a figure of merit (FOM) of 22.4 and a 27.7 fJ/conversion-step at low-frequency and Nyquist frequency, respectively

Energy Efficient Pipeline ADCs Using Ring Amplifiers

Pipeline ADCs require accurate amplification. Traditionally, an operational transconductance amplifier (OTA) configured as a switched-capacitor (SC) amplifier performs such amplification. However, traditional OTAs limit the power efficiency of ADCs since they require high quiescent current for slewing and bandwidth. In addition, it is difficult to design low-voltage OTAs in modern, scaled CMOS. The ring amplifier is an energy efficient and high output swing alternative to an OTA for SC circuits which is basically a three-stage inverter amplifier stabilized in a feedback configuration. However, the conventional ring amplifier requires external biases, which makes the ring amplifier less practical when we consider process, supply voltage, and temperature (PVT) variation. In this dissertation, three types of innovative ring amplifiers are presented and verified with state-of-the-art energy efficient pipeline ADCs. These new ring amplifiers overcome the limitations of the conventional ring amplifier and further improve energy efficiency. The first topic of this dissertation is a self-biased ring amplifier that makes the ring amplifier more practical and power efficient, while maintaining the benefits of efficient slew-based charging and an almost rail-to-rail output swing. In addition, the ring amplifiers are also used as comparators in the 1.5b sub-ADCs by utilizing the unique characteristics of the ring amplifier. This removes the need for dedicated comparators in sub-ADCs, thus further reducing the power consumption of the ADC. The prototype 10.5b 100 MS/s comparator-less pipeline ADC with the self-biased ring amplifiers has measured SNDR, SNR and SFDR of 56.6 dB (9.11b), 57.5 dB and 64.7 dB, respectively, and consumes 2.46 mW, which results in Walden Figure-of-Merit (FoM) of 46.1 fJ/ conversion∙step. The second topic is a fully-differential ring amplifier, which solves the problems of single-ended ring amplifiers while maintaining the benefits of the single-ended ring amplifiers. This differential ring-amplifier is applied in a 13b 50 MS/s SAR-assisted pipeline ADC. Furthermore, an improved capacitive DAC switching method for the first stage SAR reduces the DAC linearity errors and switching energy. The prototype ADC achieves measured SNDR, SNR and SFDR of 70.9 dB (11.5b), 71.3 dB and 84.6 dB, respectively, and consumes 1 mW. This measured performance is equivalent to Walden and Schreier FoMs of 6.9 fJ/conversion∙step and 174.9 dB, respectively. Finally, a four-stage fully-differential ring amplifier improves the small-signal gain to over 90 dB without compromising speed. In addition, a new auto-zero noise filtering method reduces noise without consuming additional power. This is more area efficient than the conventional auto-zero noise folding reduction technique. A systematic mismatch free SAR CDAC layout method is also presented. The prototype 15b 100 MS/s calibration-free SAR-assisted pipeline ADC using the four-stage ring amplifier achieves 73.2 dB SNDR (11.9b) and 90.4 dB SFDR with a 1.1 V supply. It consumes 2.3 mW resulting in Schreier FoM of 176.6 dB.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/138759/1/yonglim_1.pd

A 1.67 pJ/Conversion-step 8-bit SAR-Flash ADC Architecture in 90-nm CMOS Technology

A novice advanced architecture of 8-bit analog todigital converter is introduced and analyzed in this work. Thestructure of proposed ADC is based on the sub-ranging ADCarchitecture in which a 4-bit resolution flash-ADC is utilized. Theproposed ADC architecture is designed by employing a comparatorwhich is equipped with common mode current feedback andgain boosting technique (CMFD-GB) and a residue amplifier. Theproposed 8 bits ADC structure can achieve the speed of 140 megasamplesper second. The proposed ADC architecture is designedat a resolution of 8 bits at 10 MHz sampling frequency. DNL andINL values of the proposed design are -0.94/1.22 and -1.19/1.19respectively. The ADC design dissipates a power of 1.24 mWwith the conversion speed of 0.98 ns. The magnitude of SFDRand SNR from the simulations at Nyquist input is 39.77 and 35.62decibel respectively. Simulations are performed on a SPICE basedtool in 90 nm CMOS technology. The comparison shows betterperformance for the proposed ADC design in comparison toother ADC architectures regarding speed, resolution and powerconsumption

Design of Power Management Integrated Circuits and High-Performance ADCs

A battery-powered system has widely expanded its applications to implantable medical devices (IMDs) and portable electronic devices. Since portable devices or IMDs operate in the energy-constrained environment, their low-power operations in combination with efficiently sourcing energy to them are key problems to extend device life. This research proposes novel circuit techniques for two essential functions of a power receiving unit (PRU) in the energy-constrained environment, which are power management and signal processing. The first part of this dissertation discusses power management integrated circuits for a PRU. From a power management perspective, the most critical two circuit blocks are a front-end rectifier and a battery charger. The front-end CMOS active rectifier converts transmitted AC power into DC power. High power conversion efficiency (PCE) is required to reduce power loss during the power transfer, and high voltage conversion ratio (VCR) is required for the rectifier to enable low-voltage operations. The proposed 13.56-MHz CMOS active rectifier presents low-power circuit techniques for comparators and controllers to reduce increasing power loss of an active diode with offset/delay calibration. It is implemented with 5-V devices of a 0.35 µm CMOS process to support high voltage. A peak PCE of 89.0%, a peak VCR of 90.1%, and a maximum output power of 126.7 mW are measured for 200Ω loading. The linear battery charger stores the converted DC power into a battery. Since even small power saving can be enough to run the low-power PRU, a battery charger with low IvQ is desirable. The presented battery charger is based on a single amplifier for regulation and the charging phase transition from the constant-current (CC) phase to the constant-voltage (CV) phase. The proposed unified amplifier is based on stacked differential pairs which share the bias current. Its current-steering property removes multiple amplifiers for regulation and the CC-CV transition, and achieves high unity-gain loop bandwidth for fast regulation. The charger with the maximum charging current of 25 mA is implemented in 0.35 µm CMOS. A peak charger efficiency of 94% and average charger efficiency of 88% are achieved with an 80-mAh Li-ion polymer battery. The second part of this dissertation focuses on analog-to-digital converters (ADCs). From a signal processing perspective, an ADC is one of the most important circuit blocks in the PRU. Hence, an energy-efficient ADC is essential in the energy-constrained environment. A pipelined successive approximation register (SAR) ADC has good energy efficiency in a design space of moderate-to-high speeds and resolutions. Process-Voltage-Temperature variations of a dynamic amplifier in the pipelined-SAR ADC is a key design issue. This research presents two dynamic amplifier architectures for temperature compensation. One is based on a voltage-to-time converter (VTC) and a time-to-voltage converter (TVC), and the other is based on a temperature-dependent common-mode detector. The former amplifier is adopted in a 13-bit 10-50 MS/s subranging pipelined-SAR ADC fabricated in 0.13-µm CMOS. The ADC can operate under the power supply voltage of 0.8-1.2 V. Figure-of-Merits (FoMs) of 4-11.3 fJ/conversion-step are achieved. The latter amplifier is also implemented in 0.13-µm CMOS, consuming 0.11 mW at 50 MS/s. Its measured gain variation is 2.1% across the temperature range of -20°C to 85 °C

Design of Inverter Based CMOS Amplifiers in Deep Nanoscale Technologies

In this work, it is proposed a fully differential ring amplifier topology with a deadzone voltage created by a CMOS resistor with a biasing circuit to increase the robustness over PVT variations. The study focuses on analyzing the performance of the ring amplifier over process, temperature, and supply voltage variations, in order to guarantee a viable industrial employment in a 7 nm FinFET CMOS technology node for being used as residue amplifier in ADCs. A ring amplifier is a small modular amplifier, derived from a ring oscillator. It is simple enough that it can quickly be designed using only a few inverters, capacitors, and switches. It can amplify with rail-to-rail output swing, competently charge large capacitive loads using slew-based charging, and scale well in performance according to process trends. In typical process corner, a gain of 72 dB is achieved with a settling time of 150 ps. Throughout the study, the proposed topology is compared with others presented in literature showing better results over corners and presenting a faster response. The proposed topology isn’t yet suitable for industry use, because it presents one corner significantly slower than the rest, namely process corner FF 125 °C, and process corner FS -40 °C with a small oscillation throughout the entire amplification period. Nevertheless, it proved itself to be a promising technique, showing a high gain and a fast settling without oscillation phase, with room for improvement.Neste trabalho, é proposta uma topologia de ring amplifier com a deadzone a ser criada através de uma resistência CMOS com um circuito de polarização para aumentar a robustez para as variações PVT. O estudo foca-se em analisar a performance do ring amplifier nas variações de processo, temperatura e tensão de alimentação, de forma a garantir um uso viável em indústria na tecnologia de 7 nm FinFET CMOS, para ser usado como amplificador de resíduo em ADCs. Um ring amplifier é um pequeno amplificador modular, derivado do ring oscillator. É simples o suficiente para ser facilmente projetado usando apenas poucos inversores, condensadores e interruptores. Consegue amplificar com rail-to-rail output swing, carregar grandes cargas capacitivas com carregamento slew-based e escalar bem em termos de performance de acordo com o processo. No typical process corner, foi obtido um ganho de 72 dB com um tempo de estabilização de 150 ps. Durante o estudo, a topologia proposta é comparada com outras presentes na literatura mostrando melhores resultados over corners e apresentando uma resposta mais rápida. A topologia proposta ainda não está preparada para uso industrial uma vez que apresenta um corner significativamente mais lento que os restantes, nomeadamente, process corner FF 125 °C, e outro process corner, FS -40 °C, com uma pequena oscilação durante todo o período de amplificação. Todavia, provou ser uma técnica promissora, apresentando um ganho elevado e uma rápida estabilização sem fase de oscilação, com espaço para melhoria

Design of Analog-to-Digital Converters with Embedded Mixing for Ultra-Low-Power Radio Receivers

In the field of radio receivers, down-conversion methods usually rely on one (or more) explicit mixing stage(s) before the analog-to-digital converter (ADC). These stages not only contribute to the overall power consumption but also have an impact on area and can compromise the receiver’s performance in terms of noise and linearity. On the other hand, most ADCs require some sort of reference signal in order to properly digitize an analog input signal. The implementation of this reference signal usually relies on bandgap circuits and reference buffers to generate a constant, stable, dc signal. Disregarding this conventional approach, the work developed in this thesis aims to explore the viability behind the usage of a variable reference signal. Moreover, it demonstrates that not only can an input signal be properly digitized, but also shifted up and down in frequency, effectively embedding the mixing operation in an ADC. As a result, ADCs in receiver chains can perform double-duty as both a quantizer and a mixing stage. The lesser known charge-sharing (CS) topology, within the successive approximation register (SAR) ADCs, is used for a practical implementation, due to its feature of “pre-charging” the reference signal prior to the conversion. Simulation results from an 8-bit CS-SAR ADC designed in a 0.13 μm CMOS technology validate the proposed technique

Time interleaved counter analog to digital converters

The work explores extending time interleaving in A/D converters, by applying a high-level of parallelism to one of the slowest and simplest types of data-converters, the counter ADC. The motivation for the work is to realise high-performance re-configurable A/D converters for use in multi-standard and multi-PHY communication receivers with signal bandwidths in the 10s to 100s of MHz. The counter ADC requires only a comparator, a ramp signal, and a digital counter, where the comparator compares the sampled input against all possible quantisation levels sequentially. This work explores arranging counter ADCs in large time-interleaved arrays, building a Time Interleaved Counter (TIC) ADC. The key to realising a TIC ADC is distributed sampling and a global multi-phase ramp generator realised with a novel figure-of-8 rotating resistor ring. Furthermore Counter ADCs allow for re-configurability between effective sampling rate and resolution due to their sequential comparison of reference levels in conversion. A prototype TIC ADC of 128-channels was fabricated and measured in 0.13μm CMOS technology, where the same block can be configured to operate as a 7-bit 1GS/s, 8-bit 500MS/s, or 9-bit 250MS/s dataconverter. The ADC achieves a sub 400fJ/step FOM in all modes of configuration