Modulation of coaxial modal interferometers based on long period gratings in double cladding fibers

This paper reports on the dynamic modulation of coaxial interferometers based on two cascaded long period gratings written in double cladding fibers. The interferometer is modulated by a piezoelectric ceramic which stretches one the gratings at tens of kHz, the output light is intensity modulated with an efficiency of 97 %. The device operates at 1530nm, has more than 50nm bandwidth, insertion loss of 0.4 dB and a temperature drift of 0.11 nm/ºC

Review of Fiber Optic Sensors for Structural Fire Engineering

Reliable and accurate measurements of temperature and strain in structures subjected to fire can be difficult to obtain using traditional sensing technologies based on electrical signals. Fiber optic sensors, which are based on light signals, solve many of the problems of monitoring structures in high temperature environments; however, they present their own challenges. This paper, which is intended for structural engineers new to fiber optic sensors, reviews various fiber optic sensors that have been used to make measurements in structure fires, including the sensing principles, fabrication, key characteristics, and recently-reported applications. Three categories of fiber optic sensors are reviewed: Grating-based sensors, interferometer sensors, and distributed sensors

Monolithic integration of broadband optical isolators for polarization-diverse silicon photonics

Integrated optical isolators have been a longstanding challenge for photonic integrated circuits (PIC). An ideal integrated optical isolator for PIC should be made by a monolithic process, have a small footprint, exhibit broadband and polarization-diverse operation, and be compatible with multiple materials platforms. Despite significant progress, the optical isolators reported so far do not meet all these requirements. In this article we present monolithically integrated broadband magneto-optical isolators on silicon and silicon nitride (SiN) platforms operating for both TE and TM modes with record high performances, fulfilling all the essential characteristics for PIC applications. In particular, we demonstrate fully-TE broadband isolators by depositing high quality magneto-optical garnet thin films on the sidewalls of Si and SiN waveguides, a critical result for applications in TE-polarized on-chip lasers and amplifiers. This work demonstrates monolithic integration of high performance optical isolators on chip for polarization-diverse silicon photonic systems, enabling new pathways to impart nonreciprocal photonic functionality to a variety of integrated photonic devices

Fiber-optic three axis magnetometer prototype development

The goal of this research program was to develop a high sensitivity, fiber optic, interferometric, three-axis magnetometer for interplanetary spacecraft applications. Dynamics Technology, Inc. (DTI) has successfully integrated a low noise, high bandwidth interferometer with high sensitivity metallic glass transducers. Also, DTI has developed sophisticated signal processing electronics and complete data acquisition, filtering, and display software. The sensor was packaged in a compact, low power and weight unit which facilitates deployment. The magnetic field sensor had subgamma sensitivity and a dynamic range of 10(exp 5) gamma in a 10 Hz bandwidth. Furthermore, the vector instrument exhibited the lowest noise level when only one axis was in operation. A system noise level of 1 gamma rms was observed in a 1 Hz bandwidth. However, with the other two channels operating, the noise level increased by about one order of magnitude. Higher system noise was attributed to cross-channel interference among the dither fields

Non-volatile optical phase shift in ferroelectric hafnium zirconium oxide

A non-volatile optical phase shifter is a critical component for enabling large-scale, energy-efficient programmable photonic integrated circuits (PICs) on a silicon (Si) photonics platform. While ferroelectric materials like BaTiO3 offer non-volatile optical phase shift capabilities, their compatibility with complementary metal-oxide-semiconductor (CMOS) fabs is limited. Hence, the search for a novel CMOS-compatible ferroelectric material for non-volatile optical phase shifting in Si photonics is of utmost importance. Hafnium zirconium oxide (HZO) is an emerging ferroelectric material discovered in 2011, which exhibits CMOS compatibility due to the utilization of high-k dielectric HfO2 in CMOS transistors. Although extensively studied for ferroelectric transistors and memories, its application in photonics remains relatively unexplored. Here, we show the optical phase shift induced by ferroelectric HZO deposited on a SiN optical waveguide. We observed a negative change in refractive index at a 1.55 um wavelength in the pristine device regardless of the direction of an applied electric filed. We achieved approximately pi phase shift in a 4.5-mm-long device with negligible optical loss. The non-volatile multi-level optical phase shift was confirmed with a persistence of > 10000 s. This phase shift can be attributed to the spontaneous polarization within the HZO film along the external electric field. We anticipate that our results will stimulate further research on optical nonlinear effects, such as the Pockels effect, in ferroelectric HZO. This advancement will enable the development of various devices, including high-speed optical modulators. Consequently, HZO-based programmable PICs are poised to become indispensable in diverse applications, ranging from optical fiber communication and artificial intelligence to quantum computing and sensing

Photonic crystal resonator integrated in a microfluidic system

We report on a novel optofluidic system consisting of a silica-based 1D photonic crystal, integrated planar waveguides and electrically insulated fluidic channels. An array of pillars in a microfluidic channel designed for electrochromatography is used as a resonator for on-column label-free refractive index detection. The resonator was fabricated in a silicon oxynitride platform, to support electroosmotic flow, and operated at 1.55 microns. Different aqueous solutions of ethanol with refractive indices ranging from n = 1.3330 to 1.3616 were pumped into the column/resonator and the transmission spectra were recorded. Linear shifts of the resonant wavelengths yielded a maximum sensitivity of 480 nm/RIU and a minimum difference of 0.007 RIU was measured

Silicon photonics devices for integrated analog signal processing and sampling

Silicon photonics offers the possibility of a reduction in size weight and power for many optical systems, and could open up the ability to build optical systems with complexities that would otherwise be impossible to achieve. Silicon photonics is an emerging technology that has already been inserted into commercial communication products. This technology has also been applied to analog signal processing applications. MIT Lincoln Laboratory in collaboration with groups at MIT has developed a toolkit of silicon photonic devices with a focus on the needs of analog systems. This toolkit includes low-loss waveguides, a high-speed modulator, ring resonator based filter bank, and all-silicon photodiodes. The components are integrated together for a hybrid photonic and electronic analog-to-digital converter. The development and performance of these devices will be discussed. Additionally, the linear performance of these devices, which is important for analog systems, is also investigated

Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation

Phase change materials (PCMs) combined with silicon photonics are emerging as a promising platform to realize miniature photonic devices. We study the basic optical properties of a sub-wavelength-dimension silicon ridge waveguide with a 20-nm-thick Ge2Sb2Te5 (GST) top-clad layer. Numerical simulations show that the effective index of the Si-GST hybrid waveguide varies significantly when the GST changes from the amorphous to the crystalline states. This change can be utilized to make micron-size photonic devices. To experimentally verify the effectiveness of the Si-GST hybrid waveguide on light wave manipulation, we fabricated a series of unbalanced Mach-Zehnder interferometers with one arm connected with a section of Si-GST hybrid waveguide in different lengths. The transmission spectra are measured and the complex effective indices are extracted for GST at crystalline, amorphous and intermediate phases. The experimental results overall agree well with the simulation ones. The nonvolatile property of GST makes it attractive to reduce the static power consumption. This research represents a significant step towards the realization of ultra-compact Si-GST hybrid devices that will play a key role in high-density photonic integrated circuits, opening the door to many potential applications, including optical switch, memory and logic operation

Lanthanide-assisted deposition of strongly electro-optic PZT thin films on silicon: toward integrated active nanophotonic devices

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5–15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm2, and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices

The Hybrid Integration of Arsenic Trisulfide and Lithium Niobate Optical Waveguides by Magnetron Sputtering.

It is well known that thermally evaporated a-As2S3 thin films are prone to oxidation when exposed to an ambient environment. These As2O3 crystals are a major source of scattering loss in sub-micron optical integrated circuits. Magnetron sputtering a-As2S3 not only produces films that have optical properties closer to their equilibrium state, the as-deposited films also show no signs of photo-decomposed As2O3. The TM propagation loss of the as-deposited As2S3-on-Ti:LiNbO3 waveguide is 0.20 plus/minus 0.05 dB/cm, and it is the first low loss hybrid waveguide demonstration. Using the recipe developed for sputtering As2S3, a hybrid Mach-Zehnder interferometer has been fabricated. This allows us to measure the group index of the integrated As2S3 waveguide and use it in the study of the group velocity dispersion in the sputtered film, as both material dispersion and waveguide dispersion may be present in the system. The average group index of the integrated As2S3 waveguide is 2.36 plus/minus 0.01. On-chip optical amplification was achieved through thermal diffusion of erbium into X-cut LiNbO3. The net gain measured for a transverse magnetic propagation mode in an 11 μm wide Er:Ti:LiNbO3 waveguide amplifier is 2.3 dB plus/minus 0.1 dB, and its on-chip gain is 1.2 plus/minus 0.1 dB/cm. The internal gain measured for a transverse electric propagation in an 7 μm wide Er:Ti:LiNbO3 waveguide amplifier is 1.8 dB plus/minus 0.1 dB and is among the highest reported in the literature. These gains were obtained with two 1488 nm lasers at a combined pump power of 182mW. In order to increase further the on-chip gain, we have to improve the mode overlap between the pump and the signal. This can be done by doping erbium into As2S3 film using multi-layer magnetron sputtering. The Rutherford backscattering spectroscopy shows that the doping of Er:As2S3 film with 16 layers of erbium is homogeneous, and Raman spectroscopy confirms no significant amount of Er-S clusters in the sputtered film. The deposition method was used to fabricate an Er:As2S3 waveguide, and the presence of active erbium ions in the waveguide is evident from the green luminescence it emitted when it was pumped by 1488 nm diode laser