Elevating commodity storage with the SALSA host translation layer

To satisfy increasing storage demands in both capacity and performance, industry has turned to multiple storage technologies, including Flash SSDs and SMR disks. These devices employ a translation layer that conceals the idiosyncrasies of their mediums and enables random access. Device translation layers are, however, inherently constrained: resources on the drive are scarce, they cannot be adapted to application requirements, and lack visibility across multiple devices. As a result, performance and durability of many storage devices is severely degraded. In this paper, we present SALSA: a translation layer that executes on the host and allows unmodified applications to better utilize commodity storage. SALSA supports a wide range of single- and multi-device optimizations and, because is implemented in software, can adapt to specific workloads. We describe SALSA's design, and demonstrate its significant benefits using microbenchmarks and case studies based on three applications: MySQL, the Swift object store, and a video server.Comment: Presented at 2018 IEEE 26th International Symposium on Modeling, Analysis, and Simulation of Computer and Telecommunication Systems (MASCOTS

Customized Interfaces for Modern Storage Devices

In the past decade, we have seen two major evolutions on storage technologies: flash storage and non-volatile memory. These storage technologies are both vastly different in their properties and implementations than the disk-based storage devices that current soft- ware stacks and applications have been built for and optimized over several decades. The second major trend that the industry has been witnessing is new classes of applications that are moving away from the conventional ACID (SQL) database access to storage. The resulting new class of NoSQL and in-memory storage applications consume storage using entirely new application programmer interfaces than their predecessors. The most significant outcome given these trends is that there is a great mismatch in terms of both application access interfaces and implementations of storage stacks when consuming these new technologies. In this work, we study the unique, intrinsic properties of current and next-generation storage technologies and propose new interfaces that allow application developers to get the most out of these storage technologies without having to become storage experts them- selves. We first build a new type of NoSQL key-value (KV) store that is FTL-aware rather than flash optimized. Our novel FTL cooperative design for KV store proofed to simplify development and outperformed state of the art KV stores, while reducing write amplification. Next, to address the growing relevance of byte-addressable persistent memory, we build a new type of KV store that is customized and optimized for persistent memory. The resulting KV store illustrates how to program persistent effectively while exposing a simpler interface and performing better than more general solutions. As the final component of the thesis, we build a generic, native storage solution for byte-addressable persistent memory. This new solution provides the most generic interface to applications, allow- ing applications to store and manipulate arbitrarily structured data with strong durability and consistency properties. With this new solution, existing applications as well as new “green field” applications will get to experience native performance and interfaces that are customized for the next storage technology evolution

Integration of Non-volatile Memory into Storage Hierarchy

In this dissertation, we present novel approaches for integrating non-volatile memory devices into storage hierarchy of a computer system. There are several types of non- volatile memory devices, such as flash memory, Phase Change Memory (PCM), Spin- transfer torque memory (STT-RAM). These devices have many appealing features for applications; however, they also offer several challenges. This dissertation is focused on how to efficiently integrate these non-volatile memories into existing memory and disk storage systems. This work is composed of two major parts. The first part investigates a main-memory system employing Phase Change Memory instead of traditional DRAM. Compared to DRAM, PCM has higher density and no static power consumption, which are very important factors for building large capacity memory systems. However, PCM has higher write latency and power consumption compared to read operations. Moreover, PCM has limited write endurance. To efficiently integrate PCM into a memory system, we have to solve the challenges brought by its expensive write operations. We propose new replacement policies and cache organizations for the last-level CPU cache, which can effectively reduce the write traffic to the PCM main memory. We evaluated our design with multiple workloads and configurations. The results show that the proposed approaches improve the lifetime and energy consumption of PCM significantly. The second part of the dissertation considers the design of a data/disk storage using non-volatile memories, e.g. flash memory, PCM and nonvolatile DIMMs. We consider multiple design options for utilizing the nonvolatile memories in the storage hierarchy. First, we consider a system that employs nonvolatile memories such as PCM or nonvolatile DIMMs on memory bus along with flash-based SSDs. We propose a hybrid file system, NVMFS, that manages both these devices. NVMFS exploits the nonvolatile memory to improve the characteristics of the write workload at the SSD. We satisfy most small random write requests on the fast nonvolatile DIMM and only do large and optimized writes on SSD. We also group data of similar update patterns together before writing to flash-SSD; as a result, we can effectively reduce the garbage collection overhead. We implemented a prototype of NVMFS in Linux and evaluated its performance through multiple benchmarks. Secondly, we consider the problem of using flash memory as a cache for a disk drive based storage system. Since SSDs are expensive, a few SSDs are designed to serve as a cache for a large number of disk drives. SSD cache space can be used for both read and write requests. In our design, we managed multiple flash-SSD devices directly at the cache layer without the help of RAID software. To ensure data reliability and cache space efficiency, we only duplicated dirty data on flash- SSDs. We also balanced the write endurance of different flash-SSDs. As a result, no single SSD will fail much earlier than the others. Thirdly, when using PCM-like devices only as data storage, it’s possible to exploit memory management hardware resources to improve file system performance. However, in this case, PCM may share critical system resources such as the TLB, page table with DRAM which can potentially impact PCM’s performance. To solve this problem, we proposed to employ superpages to reduce the pressure on memory management resources. As a result, the file system performance is further improved

A differentiated proposal of three dimension i/o performance characterization model focusing on storage environments

The I/O bottleneck remains a central issue in high-performance environments. Cloud computing, high-performance computing (HPC) and big data environments share many underneath difficulties to deliver data at a desirable time rate requested by high-performance applications. This increases the possibility of creating bottlenecks throughout the application feeding process by bottom hardware devices located in the storage system layer. In the last years, many researchers have been proposed solutions to improve the I/O architecture considering different approaches. Some of them take advantage of hardware devices while others focus on a sophisticated software approach. However, due to the complexity of dealing with high-performance environments, creating solutions to improve I/O performance in both software and hardware is challenging and gives researchers many opportunities. Classifying these improvements in different dimensions allows researchers to understand how these improvements have been built over the years and how it progresses. In addition, it also allows future efforts to be directed to research topics that have developed at a lower rate, balancing the general development process. This research present a three-dimension characterization model for classifying research works on I/O performance improvements for large scale storage computing facilities. This classification model can also be used as a guideline framework to summarize researches providing an overview of the actual scenario. We also used the proposed model to perform a systematic literature mapping that covered ten years of research on I/O performance improvements in storage environments. This study classified hundreds of distinct researches identifying which were the hardware, software, and storage systems that received more attention over the years, which were the most researches proposals elements and where these elements were evaluated. In order to justify the importance of this model and the development of solutions that targets I/O performance improvements, we evaluated a subset of these improvements using a a real and complete experimentation environment, the Grid5000. Analysis over different scenarios using a synthetic I/O benchmark demonstrates how the throughput and latency parameters behaves when performing different I/O operations using distinct storage technologies and approaches.O gargalo de E/S continua sendo um problema central em ambientes de alto desempenho. Os ambientes de computação em nuvem, computação de alto desempenho (HPC) e big data compartilham muitas dificuldades para fornecer dados em uma taxa de tempo desejável solicitada por aplicações de alto desempenho. Isso aumenta a possibilidade de criar gargalos em todo o processo de alimentação de aplicativos pelos dispositivos de hardware inferiores localizados na camada do sistema de armazenamento. Nos últimos anos, muitos pesquisadores propuseram soluções para melhorar a arquitetura de E/S considerando diferentes abordagens. Alguns deles aproveitam os dispositivos de hardware, enquanto outros se concentram em uma abordagem sofisticada de software. No entanto, devido à complexidade de lidar com ambientes de alto desempenho, criar soluções para melhorar o desempenho de E/S em software e hardware é um desafio e oferece aos pesquisadores muitas oportunidades. A classificação dessas melhorias em diferentes dimensões permite que os pesquisadores entendam como essas melhorias foram construídas ao longo dos anos e como elas progridem. Além disso, também permite que futuros esforços sejam direcionados para tópicos de pesquisa que se desenvolveram em menor proporção, equilibrando o processo geral de desenvolvimento. Esta pesquisa apresenta um modelo de caracterização tridimensional para classificar trabalhos de pesquisa sobre melhorias de desempenho de E/S para instalações de computação de armazenamento em larga escala. Esse modelo de classificação também pode ser usado como uma estrutura de diretrizes para resumir as pesquisas, fornecendo uma visão geral do cenário real. Também usamos o modelo proposto para realizar um mapeamento sistemático da literatura que abrangeu dez anos de pesquisa sobre melhorias no desempenho de E/S em ambientes de armazenamento. Este estudo classificou centenas de pesquisas distintas, identificando quais eram os dispositivos de hardware, software e sistemas de armazenamento que receberam mais atenção ao longo dos anos, quais foram os elementos de proposta mais pesquisados e onde esses elementos foram avaliados. Para justificar a importância desse modelo e o desenvolvimento de soluções que visam melhorias no desempenho de E/S, avaliamos um subconjunto dessas melhorias usando um ambiente de experimentação real e completo, o Grid5000. Análises em cenários diferentes usando um benchmark de E/S sintética demonstra como os parâmetros de vazão e latência se comportam ao executar diferentes operações de E/S usando tecnologias e abordagens distintas de armazenamento

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu