Monolithic Perimeter Gated Single Photon Avalanche Diode Based Optical Detector in Standard CMOS

Since the 1930\u27s photomultiplier tubes (PMTs) have been used in single photon detection. Single photon avalanche diodes (SPADs) are p-n junctions operated in the Geiger mode. Unlike PMTs, CMOS based SPADs are smaller in size, insensitive to magnetic fields, less expensive, less temperature dependent, and have lower bias voltages. Using appropriate readout circuitry, they measure properties of single photons, such as energy, arrival time, and spatial path making them excellent candidates for single photon detection. CMOS SPADs suffer from premature breakdown due to the non-uniform distribution of the electric field. This prevents full volumetric breakdown of the device and reduces the detection effciency by increasing the noise. A novel device known as the perimeter gated SPAD (PGSPAD) is adopted in this dissertation for mitigating the premature perimeter breakdown without compromising the fill-factor of the device. The novel contributions of this work are as follows. A novel simulation model, including SPICE characteristics and the stochastic behavior, has been developed for the perimeter gated SPAD. This model has the ability to simulate the static current-voltage and dynamic response characteristics. It also simulates the noise and spectral response. A perimeter gated silicon photomultiplier, with improved signal to noise ratio, is reported for the first time. The gate voltage reduces the dark current of the silicon photomultiplier by preventing the premature breakdown. A digital SPAD with the tunable dynamic range and sensitivity is demonstrated for the first time. This pixel can be used for weak optical signal application when relatively higher sensitivity and lower input dynamic range is required. By making the sensitivity-dynamic range trade-off the same detector can be used for applications with relatively higher optical power. Finally, an array has been developed using the digital silicon photomultiplier in which the dead time of the pixels have been reduced. This digital photomultiplier features noise variation compensation between the pixels

Modeling Emerging Semiconductor Devices for Circuit Simulation

Circuit simulation is an indispensable part of modern IC design. The significant cost of fabrication has driven researchers to verify the chip functionality through simulation before submitting the design for final fabrication. With the impending end of Moore’s Law, researchers all over the world are looking for new devices with enhanced functionality. A plethora of promising emerging devices has been proposed in recent years. In order to leverage the full potential of such devices, circuit designers need fast, reliable models for SPICE simulation to explore different applications. Most of these new devices have complex underlying physical mechanism rendering the model development an extremely challenging task. For the models to be of practical use, they have to enable fast and accurate simulation that rules out the possibility of numerically solving a system of partial differential equations to arrive at a solution. In this chapter, we show how different modeling approaches can be used to simulate three emerging semiconductor devices namely, silicon- on- insulator four gate transistor(G4FET), perimeter gated single photon avalanche diode (PG-SPAD) and insulator-metal transistor (IMT) device with volatile memristance. All the models have been verified against experimental /TCAD data and implemented in commercial circuit simulator

CMOS SINGLE-PHOTON AVALANCHE DIODES AND MICROMACHINED OPTICAL FILTERS FOR INTEGRATED FLUORESCENCE SENSING

This dissertation presents a body of work that addresses the two most pressing challenges in the field of integrated fluorescence sensing, namely, the design of integrated optical sensors and the fabrication of high-rejection micro-scale optical filters. Two novel enabling technologies were introduced. They are: the perimeter-gated single-photon avalanche diode (PGSPAD), for on-chip photon counting, and the benzotriazole (BTA)-doped thin-film polymer filter, for on-chip ultraviolet light rejection. Experimental results revealed that the PGSPAD front-end, fabricated in a 0.5 μm standard mixed-signal CMOS process, had the capability of counting photons in the MHz regime. In addition, it was found that a perimeter gate, a structural feature used to suppress edge breakdown in the diode, also maximized the signal-to-noise-ratio in the high-count rate regime whereas it maximized sensitivity at low count rates. On the other hand, BTA-doped filters were demonstrated utilizing three commonly used polymers as hosts. The filters were patternable, utilizing the same procedures traditionally used to pattern the undoped polymer hosts, a key advantage for integration into microsystems. Filter performance was analyzed using a set of metrics developed for optoelectronic characterization of integrated fluorescence sensors; high rejection levels (nearing -40 dB) of UV light were observed in films of only 5 μm in thickness. Ultimately, BTA-doped filters were integrated into a portable sensor, and their use was demonstrated in two types of bioassays

A Bulk Driven Transimpedance CMOS Amplifier for SiPM Based Detection

The contribution of this work lies in the development of a bulk driven operationaltransconducctance amplifier which can be integrated with other analog circuits andphotodetectors in the same chip for compactness, miniaturization and reducing thepower. Silicon photomultipliers, also known as SiPMs, when coupled with scintillator materials are used in many imaging applications including nuclear detection. This thesis discuss the design of a bulk-driven transimpedance amplifier suitable for detectors where the front end is a SiPM. The amplifier was design and fabricated in a standard standard CMOS process and is suitable for integration with CMOS based SiPMs and commercially available SiPMs. Specifically, the amplifier was verified in simulations and experiment using circuit models for the SiPM. The bulk-driven amplifier’s performance, was compared to a commerciallyavailable amplifier with approximately the same open loop gain (70dB). Bothamplifiers were verified with two different light sources, a scintillator and a SiPM.The energy resolution using the bulk driven amplifier was 8.6% and was 14.2% forthe commercial amplifier indicating the suitability of the amplifier design for portable systems

Design of CMOS Digital Silicon Photomultipliers with ToF for Positron Emission Tomography

This thesis presents a contribution to the design of single-photon detectors for medical imaging. Specifically, the focus has been on the development of a pixel capable of single-photon counting in CMOS technology, and the associated sensor thereof. These sensors can work under low light conditions and provide timing information to determine the time-stamp of the incoming photons. For instance, this is particularly attractive for applications that rely either on time-of-flight measurements or on exponential decay determination of the light source, like positron emission tomography or fluorescence-lifetime imaging, respectively. This thesis proposes the study of the pixel architecture to optimize its performance in terms of sensitivity, linearity and signal to noise ratio. The design of the pixel has followed a bottom-up approach, taking care of the smallest building block and studying how the different architecture choices affect performance. Among the various building blocks needed, special emphasis has been placed on the following: • the Single-Photon Avalanche Diode (SPAD), a photodiode able to detect photons one by one; • the front-end circuitry of this diode, commonly called quenching and recharge circuit; • the Time-to-Digital Converter (TDC), which determines the timing performance of the pixel. The proposed architectural exploration provides a comprehensive insight into the design space of the pixel, allowing to determine the optimum design points in terms of sensor sensitivity, linearity or signal to noise ratio, thus helping designers to navigate through non-straightforward trade-offs. The proposed TDC is based on a voltage-controlled ring oscillator, since this architecture provides moderate time resolutions while keeping the footprint, the power, and conversion time relatively small. Two pseudo-differential delay stages have been studied, one with cross-coupled PMOS transistors and the other with cross-coupled inverters. Analytical studies and simulations have shown that cross-coupled inverters are the most appropriate to implement the TDC because they achieve better time resolution with smaller energy per conversion than cross-coupled PMOS transistor stages. A 1.3×1.3 mm2 pixel has been implemented in an 110 nm CMOS image sensor technology, to have the benefits of sub-micron technologies along with the cleanliness of CMOS image sensor technologies. The fabricated chips have been used to characterize the single-photon avalanche diodes. The results agree with expectations: a maximum photon detection probability of 46 % and a median dark count rate of 0.4 Hz/µm2 with an excess voltage of 3 V. Furthermore, the characterization of the TDC shows that the time resolution is below 100 ps, which agrees with post-layout simulations. The differential non-linearity is ±0.4LSB, and the integral non-linearity is ±6.1LSB. Photoemission occurs during characterization - an indication that the avalanches are not quenched properly. The cause of this has been identified to be in the design of the SPAD and the quenching circuit. SPADs are sensitive devices which maximum reverse current must be well defined and limited by the quenching circuit, otherwise unwanted effects like excessive cross-talk, noise, and power consumption may happen. Although this issue limits the operation of the implemented pixel, the information obtained during the characterization will help to avoid mistakes in future implementations

Photodetectors

In this book some recent advances in development of photodetectors and photodetection systems for specific applications are included. In the first section of the book nine different types of photodetectors and their characteristics are presented. Next, some theoretical aspects and simulations are discussed. The last eight chapters are devoted to the development of photodetection systems for imaging, particle size analysis, transfers of time, measurement of vibrations, magnetic field, polarization of light, and particle energy. The book is addressed to students, engineers, and researchers working in the field of photonics and advanced technologies

Development and Analysis of Non-Delay-Line Constant-Fraction Discriminator Timing Circuits, Including a Fully-Monolithic CMOS Implementation

A constant-fraction discriminator (CFD) is a time pick-off circuit providing time derivation that is insensitive to input-signal amplitude and, in some cases, input-signal rise time. CFD time pick-off circuits are useful in Positron Emission Tomography (PET) systems where Bismuth Germanate (BGO)/photomultiplier scintillation detectors detect coincident, 511-keV annihilation gamma rays. Time walk and noise-induced timing jitter in time pick-off circuits are discussed along with optimal and sub-optimal timing filters designed to minimize timing jitter. Additionally, the effects of scintillation-detector statistics on timing performance are discussed, and Monte Carlo analysis is developed to provide estimated timing and energy spectra for selected detector and time pick-off circuit configurations. The traditional delay-line CFD is then described with a discussion of deterministic (non statistical) performance and statistical Monte Carlo timing performance. A new class of non-delay-line CFD circuits utilizing lowpass- and/or allpass-filter delay-line approximations is then presented. The timing performance of these non-delay-line CFD circuits is shown to be comparable to traditional delay-line CFD circuits. Following the development and analysis of non-delay-line CFD circuits, a fully-monolithic, non-delay-line CFD circuit is presented which was fabricated in a standard digital, 2-μ, double-meta], double-poly, n-well CMOS process. The CMOS circuits developed include a low time walk comparator having a time walk of approximately 175 ps for input signals with amplitudes between 10-mV to 2000-mV and a rise time (10 - 90%) of 10 ns. Additionally, a fifth-order, continuous-time filter having a bandwidth of over 100 MHz was developed to provide CFD signal shaping without a delay line. The measured timing resolution (3.26 ns FWITh1, 6.50 ns FWTM) of the fully-monolithic, CMOS CFD is comparable to measured resolution (3.30 ns FWHM, 6.40 ns FWTM) of a commercial, discrete, bipolar CFD containing an external delay line. Each CFD was tested with a PET EGO/photomultiplier scintillation detector and a preamplifier having a 10-ns (10 - 90%) rise-time. The development of a fully-monolithic, CMOS CFD circuit, believed to be the first such reported development, is significant for PET and other systems that employ many front-end CFD time pick-off circuits

Development of high performance readout ASICs for silicon photomultipliers (SiPMs)

Silicon Photomultipliers (SiPMs) are novel kind of solid state photon detectors with ex- tremely high photon detection resolution. They are composed of hundreds or thousands of avalanche photon diode pixels connected in parallel. These avalanche photon diodes are operated in Geiger Mode. SiPMs have the same magnitude of multiplication gain compared to the conventional photomultipliers (PMTs). Moreover, they have a lot of advantages such as compactness, relatively low bias voltage and magnetic field immunity etc. Special readout electronics are required to preserve the high performance of the detector. KLauS and STiC are two CMOS ASIC chips designed in particular for SiPMs. KLauS is used for SiPM charge readout applications. Since SiPMs have a much larger detector capacitance compared to other solid state photon detectors such as PIN diodes and APDs, a few special techniques are used inside the chip to make sure a descent signal to noise ratio for pixel charge signal can be obtained. STiC is a chip dedicated to SiPM time-of-flight applications. High bandwidth and low jitter design schemes are mandatory for such applications where time jitter less than tens of picosends is required. Design schemes and error analysis as well as measurement results are presented in the thesis

Analysis, synthesis, and fabrication of VLSI Si detector arrays for optoelectronic interconnections

Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.Includes bibliographical references (p. 141-145).by Edward Joseph Ouellette, III.M.S

A Picosecond Optoelectronic Cross Correlator using a Gain Modulated Avalanche Photodiode for Measuring the Impulse Response of Tissue

Human tissue is relatively transparent to light between 700 and 1000 nm in the near infrared (NIR). NIR spectroscopy is a technique that can measure non-invasively and safely, the optical properties of tissue. Several different types of spectroscopic instrumentation have currently been developed, ranging from simple continuous intensity systems, through to complex time and frequency resolved techniques. This thesis describes the development of a near infra-red time-resolved system, using an inexpensive avalanche photodiode (APD) detector and a microwave step recovery diode (SRD) in a novel way to implement a totally electronic crosscorrelator, with no moving parts. The aim of the work was to develop a simple instrument to monitor scattering changes in tissue during laser induced thermal therapy. The APD was gain-modulated by rapidly varying the bias voltage using electrical pulses generated by the SRD (120 ps full width half maximum (FWHM) and 8 V in amplitude). The resulting cross-correlator had a temporal resolution of 275 ps FWHM - significantly faster than the 750 ps FWHM of the APD when operating with a conventional fixed bias voltage. Spurious responses caused by the SRD were observed, which were removed by the addition of Schottky diodes on the SRD’s output, although this slightly degraded the system temporal resolution from 275 to 380 ps FWHM. The ability of the system to monitor scattering changes was tested using an IntralipidTM phantom containing infra-red absorbing dye. An 800 nm fibre coupled mode-locked (2 ps pulse width) laser source was used with the cross-correlator measuring the temporal point spread function (TPSF) at 5 to 30 mm away from the source fibre. Five different numerical algorithms to derive the scattering coefficient from the measured TPSF were compared. The optimum choice of algorithm was found to depend on whether absolute accuracy or minimum computation time is the most important consideration