11,534 research outputs found

    Transistor-Level Synthesis of Pipeline Analog-to-Digital Converters Using a Design-Space Reduction Algorithm

    Get PDF
    A novel transistor-level synthesis procedure for pipeline ADCs is presented. This procedure is able to directly map high-level converter specifications onto transistor sizes and biasing conditions. It is based on the combination of behavioral models for performance evaluation, optimization routines to minimize the power and area consumption of the circuit solution, and an algorithm to efficiently constraint the converter design space. This algorithm precludes the cost of lengthy bottom-up verifications and speeds up the synthesis task. The approach is herein demonstrated via the design of a 0.13 μm CMOS 10 bits@60 MS/s pipeline ADC with energy consumption per conversion of only 0.54 pJ@1 MHz, making it one of the most energy-efficient 10-bit video-rate pipeline ADCs reported to date. The computational cost of this design is of only 25 min of CPU time, and includes the evaluation of 13 different pipeline architectures potentially feasible for the targeted specifications. The optimum design derived from the synthesis procedure has been fine tuned to support PVT variations, laid out together with other auxiliary blocks, and fabricated. The experimental results show a power consumption of 23 [email protected] V and an effective resolution of 9.47-bit@1 MHz. Bearing in mind that no specific power reduction strategy has been applied; the mentioned results confirm the reliability of the proposed approach.Ministerio de Ciencia e Innovación TEC2009-08447Junta de Andalucía TIC-0281

    Design of pixel-level ADCs for energy-sensitive hybrid pixel detectors

    Get PDF
    Single-photon counting hybrid pixel detectors have shown\ud to be a valid alternative to other types of X-ray imaging\ud devices due to their high sensitivity, low noise, linear behavior\ud and wide dynamic range. One important advantage of these\ud devices is the fact that detector and readout electronics are\ud manufactured separately. This allows the use of industrial\ud state-of-the-art CMOS processes to make the readout\ud electronics, combined with a free choice of detector material\ud (high resistivity Silicon, GaAs or other). By measuring not\ud only the number of X-ray photons but also their energies (or\ud wavelengths), the information content of the image increases,\ud given the same X-ray dose. We have studied several\ud possibilities of adding energy sensitivity to the single photon\ud counting capability of hybrid pixel detectors, by means of\ud pixel-level analog-to-digital converters. We show the results of\ud simulating different kinds of analog-to-digital converters in\ud terms of power, area and speed

    Differential temperature sensors: Review of applications in the test and characterization of circuits, usage and design methodology

    Get PDF
    Differential temperature sensors can be placed in integrated circuits to extract a signature ofthe power dissipated by the adjacent circuit blocks built in the same silicon die. This review paper firstdiscusses the singularity that differential temperature sensors provide with respect to other sensortopologies, with circuit monitoring being their main application. The paper focuses on the monitoringof radio-frequency analog circuits. The strategies to extract the power signature of the monitoredcircuit are reviewed, and a list of application examples in the domain of test and characterizationis provided. As a practical example, we elaborate the design methodology to conceive, step bystep, a differential temperature sensor to monitor the aging degradation in a class-A linear poweramplifier working in the 2.4 GHz Industrial Scientific Medical—ISM—band. It is discussed how,for this particular application, a sensor with a temperature resolution of 0.02 K and a high dynamicrange is required. A circuit solution for this objective is proposed, as well as recommendations for thedimensions and location of the devices that form the temperature sensor. The paper concludes with adescription of a simple procedure to monitor time variability.Postprint (published version

    Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging

    Get PDF
    Recently CMOS Active Pixels Sensors (APSs) have become a valuable alternative to amorphous Silicon and Selenium Flat Panel Imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ≤ 1.9%. The uniformity of the image quality performance has been further investigated in a typical X-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practise. Finally, in order to compare the detection capability of this novel APS with the currently used technology (i.e. FPIs), theoretical evaluation of the Detection Quantum Efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this detector compared to FPIs. Optical characterization, X-ray contrast measurements and theoretical DQE evaluation suggest that a trade off can be found between the need of a large imaging area and the requirement of a uniform imaging performance, making the DynAMITe large area CMOS APS suitable for a range of bio-medical applications

    An Energy-Efficient, Dynamic Voltage Scaling Neural Stimulator for a Proprioceptive Prosthesis

    Get PDF
    Accepted versio

    Guest editorial for the special issue on software-defined radio transceivers and circuits for 5G wireless communications

    Get PDF
    Yichuang Sun, Baoyong Chi, and Heng Zhang, Guest Editorial for the Special Issue on Software-Defined Radio Transceivers and Circuits for 5G Wireless Communications, published in IEEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 63 (1): 1-3, January 2016, doi: https://doi.org/10.1109/TCSII.2015.2506979.Peer reviewedFinal Accepted Versio

    Radiation Risks and Mitigation in Electronic Systems

    Full text link
    Electrical and electronic systems can be disturbed by radiation-induced effects. In some cases, radiation-induced effects are of a low probability and can be ignored; however, radiation effects must be considered when designing systems that have a high mean time to failure requirement, an impact on protection, and/or higher exposure to radiation. High-energy physics power systems suffer from a combination of these effects: a high mean time to failure is required, failure can impact on protection, and the proximity of systems to accelerators increases the likelihood of radiation-induced events. This paper presents the principal radiation-induced effects, and radiation environments typical to high-energy physics. It outlines a procedure for designing and validating radiation-tolerant systems using commercial off-the-shelf components. The paper ends with a worked example of radiation-tolerant power converter controls that are being developed for the Large Hadron Collider and High Luminosity-Large Hadron Collider at CERN.Comment: 19 pages, contribution to the 2014 CAS - CERN Accelerator School: Power Converters, Baden, Switzerland, 7-14 May 201
    corecore