4 research outputs found
Adaptive Receiver Design for High Speed Optical Communication
Conventional input/output (IO) links consume power, independent of changes
in the bandwidth demand by the system they are deployed in. As the system is
designed to satisfy the peak bandwidth demand, most of the time the IO links
are idle but still consuming power. In big data centers, the overall utilization
ratio of IO links is less than 10%, corresponding to a large amount of energy
wasted for idle operation.
This work demonstrates a 60 Gb/s high sensitivity non-return-to-zero (NRZ)
optical receiver in 14 nm FinFET technology with less than 7 ns power-on time.
The power on time includes the data detection, analog bias settling, photo-diode
DC current cancellation, and phase locking by the clock and data recovery circuit
(CDR). The receiver autonomously detects the data demand on the link
via a proposed link protocol and does not require any external enable or disable
signals. The proposed link protocol is designed to minimize the off-state power
consumption and power-on time of the link.
In order to achieve high data-rate and high-sensitivity while maintaining
the power budget, a 1-tap decision feedback equalization method is applied in
digital domain. The sensitivity is measured to be -8 dBm, -11 dBm, and -13 dBm
OMA (optical modulation amplitude) at 60 Gb/s, 48 Gb/s, and 32 Gb/s data rates,
respectively. The energy efficiency in always-on mode is around 2.2 pJ/bit for all
data-rates with the help of supply and bias scaling.
The receiver incorporates a phase interpolator based clock-and-data recovery
circuit with approximately 80 MHz jitter-tolerance corner frequency, thanks to
the low-latency full custom CDR logic design.
This work demonstrates the fastest ever reported CMOS optical receiver and
runs almost at twice the data-rate of the state-of-the-art CMOS optical receiver
by the time of the publication. The data-rate is comparable to BiCMOS optical
receivers but at a fraction of the power consumption
Broadband Receiver Electronic Circuits for Fiber-Optical Communication Systems
The exponential growth of internet traffic drives datacenters to constantly improve their capacity. As the copper based network infrastructure is being replaced by fiber-optical interconnects, new industrial standards for higher datarates are required. Several research and industrial organizations are aiming towards 400 Gb Ethernet and beyond, which brings new challenges to the field of high-speed broadband electronic circuit design. Replacing OOK with higher M-ary modulation formats and using higher datarates increases network capacity but at the cost of power. With datacenters rapidly becoming significant energy consumers on the global scale, the energy efficiency of the optical interconnect transceivers takes a primary role in the development of novel systems. There are several additional challenges unique in the design of a broadband shortreach fiber-optical receiver system. The sensitivity of the receiver depends on the noise performance of the PD and the electronics. The overall system noise must be optimized for the specific application, modulation scheme, PD and VCSEL characteristics. The topology of the transimpedance amplifier affects the noise and frequency response of the PD, so the system must be optimized as a whole. Most state-of-the-art receivers are built on high-end semiconductor SiGe and InP technologies. However, there are still several design decisions to be made in order to get low noise, high energy efficiency and adequate bandwidth. In order to overcome the frequency limitations of the optoelectronic components, bandwidth enhancement and channel equalization techniques are used. In this work several different blocks of a receiver system are designed and characterized. A broadband, 50 GHz bandwidth CB-based TIA and a tunable gain equalizer are designed in a 130 nm SiGe BiCMOS process. An ultra-broadband traveling wave amplifier is presented, based on a 250 nm InP DHBT technology demonstrating a 207 GHz bandwidth. Two TIA front-end topologies with 133 GHz bandwidth, a CB and a CE with shunt-shunt feedback, based on a 130 nm InP DHBT technology are designed and compared
Wideband integrated circuits for optical communication systems
The exponential growth of internet traffic drives datacenters to constantly improvetheir capacity. Several research and industrial organizations are aiming towardsTbps Ethernet and beyond, which brings new challenges to the field of high-speedbroadband electronic circuit design. With datacenters rapidly becoming significantenergy consumers on the global scale, the energy efficiency of the optical interconnecttransceivers takes a primary role in the development of novel systems. Furthermore,wideband optical links are finding application inside very high throughput satellite(V/HTS) payloads used in the ever-expanding cloud of telecommunication satellites,enabled by the maturity of the existing fiber based optical links and the hightechnology readiness level of radiation hardened integrated circuit processes. Thereare several additional challenges unique in the design of a wideband optical system.The overall system noise must be optimized for the specific application, modulationscheme, PD and laser characteristics. Most state-of-the-art wideband circuits are builton high-end semiconductor SiGe and InP technologies. However, each technologydemands specific design decisions to be made in order to get low noise, high energyefficiency and adequate bandwidth. In order to overcome the frequency limitationsof the optoelectronic components, bandwidth enhancement and channel equalizationtechniques are used. In this work various blocks of optical communication systems aredesigned attempting to tackle some of the aforementioned challenges. Two TIA front-end topologies with 133 GHz bandwidth, a CB and a CE with shunt-shunt feedback,are designed and measured, utilizing a state-of-the-art 130 nm InP DHBT technology.A modular equalizer block built in 130 nm SiGe HBT technology is presented. Threeultra-wideband traveling wave amplifiers, a 4-cell, a single cell and a matrix single-stage, are designed in a 250 nm InP DHBT process to test the limits of distributedamplification. A differential VCSEL driver circuit is designed and integrated in a4x 28 Gbps transceiver system for intra-satellite optical communications based in arad-hard 130nm SiGe process
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Design of Power-Efficient Optical Transceivers and Design of High-Linearity Wireless Wideband Receivers
The combination of silicon photonics and advanced heterogeneous integration is promising for next-generation disaggregated data centers that demand large scale, high throughput, and low power. In this dissertation, we discuss the design and theory of power-efficient optical transceivers with System-in-Package (SiP) 2.5D integration. Combining prior arts and proposed circuit techniques, a receiver chip and a transmitter chip including two 10 Gb/s data channels and one 2.5 GHz clocking channel are designed and implemented in 28 nm CMOS technology.
An innovative transimpedance amplifier (TIA) and a single-ended to differential (S2D) converter are proposed and analyzed for a low-voltage high-sensitivity receiver; a four-to-one serializer, programmable output drivers, AC coupling units, and custom pads are implemented in a low-power transmitter; an improved quadrature locked loop (QLL) is employed to generate accurate quadrature clocks. In addition, we present an analysis for inverter-based shunt-feedback TIA to explicitly depict the trade-off among sensitivity, data rate, and power consumption. At last, the research on CDR-based​ clocking schemes for optical links is also discussed. We introduce prior arts and propose a power-efficient clocking scheme based on an injection-locked phase rotator. Next, we analyze injection-locked ring oscillators (ILROs) that have been widely used for quadrature clock generators (QCGs) in multi-lane optical or wireline transceivers due to their low power, low area, and technology scalability. The asymmetrical or partial injection locking from 2 phases to 4 phases results in imbalances in amplitude and phase. We propose a modified frequency-domain analysis to provide intuitive insight into the performance design trade-offs. The analysis is validated by comparing analytical predictions with simulations for an ILRO-based QCG in 28 nm CMOS technology.
This dissertation also discusses the design of high-linearity wireless wideband receivers. An out-of-band (OB) IM3 cancellation technique is proposed and analyzed. By exploiting a baseband auxiliary path (AP) with a high-pass feature, the in-band (IB) desired signal and out-of-band interferers are split. OB third-order intermodulation products (IM3) are reconstructed in the AP and cancelled in the baseband (BB). A 0.5-2.5 GHz frequency-translational noise-cancelling (FTNC) receiver is implemented in 65nm CMOS to demonstrate the proposed approach. It consumes 36 mW without cancellation at 1 GHz LO frequency and 1.2 V supply, and it achieves 8.8 MHz baseband bandwidth, 40dB gain, 3.3dB NF, 5dBm OB IIP3, and −6.5dBm OB B1dB. After IM3 cancellation, the effective OB-IIP3 increases to 32.5 dBm with an extra 34 mW for narrow-band interferers (two tones). For wideband interferers, 18.8 dB cancellation is demonstrated over 10 MHz with two −15 dBm modulated interferers. The local oscillator (LO) leakage is −92 dBm and −88 dB at 1 GHz and 2 GHz LO respectively. In summary, this technique achieves both high OB linearity and good LO isolation