Silicon Germanium BiCMOS Comparator Designed for Use in An Extreme Environment Analog to Digital Converter

This thesis demonstrates the process of creating a radiation hardened and extreme temperature operating comparator from start to finish in the 90 nm SiGe 9HP process node. This includes the entire design flow from examining comparator topologies, to designing the initial comparator circuits, to simulating the comparator over a temperature range of -196°C to 125°C, and finally the testing of the fabricated circuit. To verify the circuit would work at low temperatures, several new device models were created that could be used for simulations at -196°C. In addition to its properties as a standalone comparator, the circuit was also used as a building block in a SAR ADC that would be used for extreme environments

Transmetteurs photoniques sur silicium pour les transmissions optiques à grande capacité

Les applications exigeant des très nombreuses données (médias sociaux, diffusion vidéo en continu, mégadonnées, etc.) se développent à un rythme rapide, ce qui nécessite de plus en plus de liaisons optiques ultra-rapides. Ceci implique le développment des transmetteurs optiques intégrés et à bas coût et plus particulirement en photonique sur silicium en raison de ses avantages par rapport aux autres technologies (LiNbO3 et InP), tel que la compatibilité avec le procédé de fabrication CMOS. Les modulateurs optoélectronique sont un élément essentiel dans la communication op-tique. Beaucoup de travaux de recherche sont consacrées au développement de dispositifs optiques haut débit efficaces. Cependant, la conception de modulateurs en photonique sur sili-cium (SiP) haut débit est diffcile, principalement en raison de l'absence d'effet électro-optique intrinsèque dans le silicium. De nouvelles approches et de architectures plus performances doivent être développées afin de satisfaire aux critères réliés au système d'une liaison optique aux paramètres de conception au niveau du dispositif integré. En outre, la co-conception de circuits integrés photoniques sur silicium et CMOS est cruciale pour atteindre tout le potentiel de la technologie de photonique sur silicium. Ainsi cette thèse aborde les défits susmentionnés. Dans notre première contribution, nous préesentons pour la première fois un émetteur phononique sur silicium PAM-4 sans utiliser un convertisseur numérique analog (DAC)qui comprend un modulateur Mach Zehnder à électrodes segmentées SiP (LES-MZM) implémenté dans un procédé photonique sur silicium générique avec jonction PN latérale et son conducteur CMOS intégré. Des débits allant jusqu'à 38 Gb/s/chnnel sont obtenus sans utili-ser un convertisseur numérique-analogique externe. Nous présentons également une nouvelle procédure de génération de délai dans le excitateur de MOS complémentaire. Un effet, un délai robuste aussi petit que 7 ps est généré entre les canaux de conduite. Dans notre deuxième contribution, nous présentons pour la première fois un nouveau fac-teur de mérite (FDM) pour les modulateurs SiP qui inclut non seulement la perte optique et l'efficacité (comme les FDMs précédents), mais aussi la bande passante électro-optique du modulateur SiP (BWEO). Ce nouveau FDM peut faire correspondre les paramètres de conception physique du modulateur SiP à ses critères de performance au niveau du système, facilitant à la fois la conception du dispositif optique et l'optimisation du système. Pour la première fois nous définissons et utilisons la pénalité de puissance du modulateur (MPP) induite par le modulateur SiP pour étudier la dégradation des performances au niveau du système induite par le modulateur SiP dans une communication à base de modulation d'amplitude d'impulsion optique. Nous avons développé l'équation pour MPP qui inclut les facteurs de limitation du modulateur (perte optique, taux d'extinction limité et limitation de la bande passante électro-optique). Enfin, dans notre troisième contribution, une nouvelle méthodologie de conception pour les modulateurs en SiP intégré à haute débit est présentée. La nouvelle approche est basée sur la minimisation de la MPP SiP en optimisant l'architecture du modulateur et le point de fonctionnement. Pour ce processus, une conception en longueur unitaire du modulateur Mach Zehnder (MZM) peut être optimisée en suivant les spécifications du procédé de fabrication et les règles de conception. Cependant, la longueur et la tension de biais du d'éphaseur doivent être optimisées ensemble (par exemple selon vitesse de transmission et format de modulation). Pour vérifier l'approche d'optimisation proposée expérimentale mont, a conçu un modulateur photonique sur silicium en phase / quadrature de phase (IQ) ciblant le format de modulation 16-QAM à 60 Gigabaud. Les résultats expérimentaux prouvent la fiabilité de la méthodologie proposée. D'ailleurs, nous avons augmenté la vitesse de transmission jusqu'à 70 Gigabaud pour tester la limite de débit au système. Une transmission de données dos à dos avec des débits binaires de plus de 233 Gigabit/s/channel est observée. Cette méthodologie de conception ouvre ainsi la voie à la conception de la prochaine génération d'émetteurs intégrés à double polarisation 400+ Gigabit/s/channel.Data-hungry applications (social media, video streaming, big data, etc.) are expanding at a fast pace, growing demand for ultra-fast optical links. This driving force reveals need for low-cost, integrated optical transmitters and pushes research in silicon photonics because of its advantages over other platforms (i.e. LiNbO3 and InP), such as compatibility with CMOS fabrication processes, the ability of on-chip polarization manipulation, and cost effciency. Electro-optic modulators are an essential component of optical communication links and immense research is dedicated to developing effcient high-bitrate devices. However, the design of high-capacity Silicon Photonics (SiP) transmitters is challenging, mainly due to lack of inherent electro-optic effect in silicon. New design methodologies and performance merits have to be developed in order to map the system-level criteria of an optical link to the design parameters in device-level. In addition, co-design of silicon photonics and CMOS integrated circuits is crucial to reveal the full potential of silicon photonics. This thesis addresses the aforementioned challenges. In our frst contribution, for the frst time we present a DAC-less PAM-4 silicon photonic transmitter that includes a SiP lumped-element segmented-electrode Mach Zehnder modula-tor (LES-MZM) implemented in a generic silicon photonic process with lateral p-n junction and its co-designed CMOS driver. Using post processing, bitrates up to 38 Gb/s/channel are achieved without using an external digital to analog converter. We also presents a novel delay generation procedure in the CMOS driver. A robust delay as small as 7 ps is generated between the driving channels. In our second contribution, for the frst time we present a new figure of merit (FOM) for SiP modulators that includes not only the optical loss and effciency (like the prior FOMs), but also the SiP modulator electro-optic bandwidth ( BWEO). This new FOM can map SiP modulator physical design parameters to its system-level performance criteria, facilitating both device design and system optimization. For the frst time we define and employ the modulator power penalty (MPP) induced by the SiP modulator to study the system level performance degradation induced by SiP modulator in an optical pulse amplitude modulation link. We develope a closed-form equation for MPP that includes the SiP modulator limiting factors (optical loss, limited extinction ratio and electro-optic bandwidth limitation). Finally in our third contribution, we present a novel design methodology for integrated high capacity SiP modulators. The new approach is based on minimizing the power penalty of a SiP modulator (MPP) by optimizing modulator design and bias point. For the given process, a unit-length design of Mach Zehnder modulator (MZM) can be optimized following the process specifications and design rules. However, the length and the bias voltage of the phase shifter must be optimized together in a system context (e.g., baud rate and modulation format). Moreover, to verify the proposed optimization approach in experiment, we design an in-phase/quadrature-phase (IQ) silicon photonic modulator targeting 16-QAM modulation format at 60 Gbaud. Experimental results proves the reliability of our proposed methodology. We further push the baud rate up to 70 Gbaud to examine the capacity boundary of the device. Back to back data transmission with bitrates more than 233 Gb/s/channel are captured. This design methodology paves the way for designing the next generation of integrated dual- polarization 400+ Gb/s/channel transmitters

A Study On Power Reduction Techniques For Comparator Based On Body Biasing

The growth of portable electronic devices in consumer market has led to the innovation of low power design. Furthermore, the scaling down of CMOS process technology has increased the transistor density. As a result, the device has higher functionality but more power is consumed per area unit. Hence power reduction technique is being explored in electronic integrated circuit design. In flash analog to digital converter (ADC), comparator consumes the most power. In this dissertation, power reductions techniques such as sleepy transistor technique, stack transistor technique and body biasing technique are studied. A conventional comparator, comparator reduced VDD and comparator with super cut-off CMOS (SCCMOS) and sleepy stack are implanted using 0.13 μm CMOS process technology. Then, a low power comparator is proposed using body biasing technique, sleepy stack transistor and super cut-off CMOS. Forward body biasing technique is used to decrease the threshold voltage. As a result, VDD is able to reduce. Hence, dynamic power consumption also reduced. Meanwhile, SCCMOS and sleepy stack transistor are used to reduce leakage current. As a consequence, the static power is reduced. From pre-layout simulation of proposed comparator, the static power is 94.66 pW compared to 404.2 μW for conventional comparator. Meanwhile, the dynamic power for proposed comparator is 14.76 μW compared 1.127 mV for conventional comparator. The pre-layout xiv simulation and post-layout simulation show there is no significant parasitic effect on the performance of proposed comparator

Advances in Switched-Mode Power Conversion Part II

A number of important practical extensions to the basic Ćuk converter are presented. They include dc isolation, multiple-output power sources, and a physical realization of the sought for hypothetical dc-to-dc transformer, a device which converts from pure dc (no voltage or current ripple) at one terminal, to pure dc (at a different voltage) at the other terminal. The application of the circuit in a highly efficient amplifier for the servo control of a dc motor or other loads is also presented

An Optical Grooming Switch for High-Speed Traffic Aggregation in Time, Space and Wavelength

In this book a novel optical switch is designed, developed, and tested. The switch integrates optical switching, transparent traffic aggregation/grooming, and optical regener-ation. Innovative switch subsystems are developed that enable these functionalities, including all-optical OTDM-to-WDM converters. High capacity ring interconnection between metro-core rings, carrying 130 Gbit/s OTDM traffic, and metro-access rings carring 43 Gbit/s WDM traffic is experimentally demonstrated. The developed switch features flexibility in bandwidth provisioning, scalability to higher traffic volumes, and backward compatibility with existing network implementations in a future-proof way

Component Optimization of a Parallel P4 Hybrid Electric Vehicle Utilizing an Equivalent Consumption Minimization Strategy

Advancements in battery and electric motor technology have driven the development of hybrid electric vehicles to improve fuel economy. Hybrid electric vehicles can utilize an internal combustion engine and an electric motor in many configurations, requiring the development of advanced energy management strategies for a range of component configurations. The Equivalent Consumption Minimization Strategy (ECMS) is an advanced energy management strategy that can be calculated in-vehicle in real-time operation. This energy management strategy uses an equivalence factor to equate electrical to mechanical power when performing the torque split determination between the internal combustion engine and electric motor. This equivalence factor is determined from offline vehicle simulations using a sensitivity analysis to provide optimized fuel economy results, while maintaining a target state of charge of the battery. The goal of this work is to analyze how the algorithm operates with the WVU Chevy Blazer to find an optimal equivalence factor that can maintain a strict charge sustaining window of operation for the high voltage battery, while improving the fuel economy based on dynamic programing results calculated for this vehicle architecture. Different electric motor sizes are then explored by changing the max torque and max power to analyze how the equivalence factor changes to operate the ECMS algorithm. This research mainly focused on utilizing both the UDDS drive cycle and HwFET drive cycle to determine the effectiveness of the ECMS algorithm. The results show that as the max torque and max power of the electric motor increased, the equivalence factor found for the UDDS drive cycle and the HwFET drive cycle converged to similar value. The convergence of the equivalence factor allowed the ECMS algorithm to better maintain the target state of charge of the battery while maintaining the fuel economy and improving the fuel economy for the UDDS drive cycle and HwFET drive cycle, respectively

Ultra-low Quiescent Current NMOS Low Dropout Regulator With Fast Transient response for Always-On Internet-of-Things Applications

abstract: The increased adoption of Internet-of-Things (IoT) for various applications like smart home, industrial automation, connected vehicles, medical instrumentation, etc. has resulted in a large scale distributed network of sensors, accompanied by their power supply regulator modules, control and data transfer circuitry. Depending on the application, the sensor location can be virtually anywhere and therefore they are typically powered by a localized battery. To ensure long battery-life without replacement, the power consumption of the sensor nodes, the supply regulator and, control and data transmission unit, needs to be very low. Reduction in power consumption in the sensor, control and data transmission is typically done by duty-cycled operation such that they are on periodically only for short bursts of time or turn on only based on a trigger event and are otherwise powered down. These approaches reduce their power consumption significantly and therefore the overall system power is dominated by the consumption in the always-on supply regulator. Besides having low power consumption, supply regulators for such IoT systems also need to have fast transient response to load current changes during a duty-cycled operation. Supply regulation using low quiescent current low dropout (LDO) regulators helps in extending the battery life of such power aware always-on applications with very long standby time. To serve as a supply regulator for such applications, a 1.24 µA quiescent current NMOS low dropout (LDO) is presented in this dissertation. This LDO uses a hybrid bias current generator (HBCG) to boost its bias current and improve the transient response. A scalable bias-current error amplifier with an on-demand buffer drives the NMOS pass device. The error amplifier is powered with an integrated dynamic frequency charge pump to ensure low dropout voltage. A low-power relaxation oscillator (LPRO) generates the charge pump clocks. Switched-capacitor pole tracking (SCPT) compensation scheme is proposed to ensure stability up to maximum load current of 150 mA for a low-ESR output capacitor range of 1 - 47µF. Designed in a 0.25 µm CMOS process, the LDO has an output voltage range of 1V – 3V, a dropout voltage of 240 mV, and a core area of 0.11 mm2.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Efficiency Improvement of LDO Output Based Linear Regulator With Supercapacitor Energy Recovery – A versatile new technique with an example of a 5V to 1.5V version

Supercapacitors are used in various industrial applications and the supercapacitors technology is gradually progressing into a mature state. Common applications of supercapacitors are in electric vehicles, hybrid electric vehicles, uninterruptible power supply (UPS) and in portable devices such as cellular phones and laptops. The capacitance values range from fractional Farads to few thousand Farads and their continuos DC voltage ratings are from 2V to 6V. At University of Waikato, a team works on using supercapacitors for improving the efficiency of linear voltage regulators. In particular, this patented technique aims at combining off the shelfs LDO ICs and a supercapacitor array for improving end to end efficiency of linear regulator. My work is aimed at developing the theoretical background and designing prototype circuitry for a voltage regulator for the case of unregulated input supply is more than 3 times of the minimum input voltage requirement of the LDO which is applicable for a 5V to 1.5V regulator. Experimental results are indicated with future suggestions for improvement

Nano-Watt Modular Integrated Circuits for Wireless Neural Interface.

In this work, a nano-watt modular neural interface circuit is proposed for ECoG neuroprosthetics. The main purposes of this work are threefold: (1) optimizing the power-performance of the neural interface circuits based on ECoG signal characteristics, (2) equipping a stimulation capability, and (3) providing a modular system solution to expand functionality. To achieve these aims, the proposed system introduces the following contributions/innovations: (1) power-noise optimization based on the ECoG signal driven analysis, (2) extreme low-power analog front-ends, (3) Manchester clock-edge modulation clock data recovery, (4) power-efficient data compression, (5) integrated stimulator with fully programmable waveform, (6) wireless signal transmission through skin, and (7) modular expandable design. Towards these challenges and contributions, three different ECoG neural interface systems, ENI-1, ENI-16, and ENI-32, have been designed, fabricated, and tested. The first ENI system(ENI-1) is a one-channel analog front-end and fabricated in a 0.25µm CMOS process with chopper stabilized pseudo open-loop preamplifier and area-efficient SAR ADC. The measured channel power, noise and area are 1.68µW at 2.5V power-supply, 1.69µVrms (NEF=2.43), and 0.0694mm^2, respectively. The fabricated IC is packaged with customized miniaturized package. In-vivo human EEG is successfully measured with the fabricated ENI-1-IC. To demonstrate a system expandability and wireless link, ENI-16 IC is fabricated in 0.25µm CMOS process and has sixteen channels with a push-pull preamplifier, asynchronous SAR ADC, and intra-skin communication(ISCOM) which is a new way of transmitting the signal through skin. The measured channel power, noise and area are 780nW, 4.26µVrms (NEF=5.2), and 2.88mm^2, respectively. With the fabricated ENI-16-IC, in-vivo epidural ECoG from monkey is successfully measured. As a closed-loop system, ENI-32 focuses on optimizing the power performance based on a bio-signal property and integrating stimulator. ENI-32 is fabricated in 0.18µm CMOS process and has thirty-two recording channels and four stimulation channels with a cyclic preamplifier, data compression, asymmetric wireless transceiver (Tx/Rx). The measured channel power, noise and area are 140nW (680nW including ISCOM), 3.26µVrms (NEF=1.6), and 5.76mm^2, respectively. The ENI-32 achieves an order of magnitude power reduction while maintaining the system performance. The proposed nano-watt ENI-32 can be the first practical wireless closed-loop solution with a practically miniaturized implantable device.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/98064/1/schang_1.pd

Improved transistorized AC motor controller for battery powered urban electric passenger vehicles

An ac motor controller for an induction motor electric vehicle drive system was designed, fabricated, tested, evaluated, and cost analyzed. A vehicle performance analysis was done to establish the vehicle tractive effort-speed requirements. These requirements were then converted into a set of ac motor and ac controller requirements. The power inverter is a three-phase bridge using power Darlington transistors. The induction motor was optimized for use with an inverter power source. The drive system has a constant torque output to base motor speed and a constant horsepower output to maximum speed. A gear shifting transmission is not required. The ac controller was scaled from the base 20 hp (41 hp peak) at 108 volts dec to an expanded horsepower and battery voltage range. Motor reversal was accomplished by electronic reversal of the inverter phase sequence. The ac controller can also be used as a boost chopper battery charger. The drive system was tested on a dynamometer and results are presented. The current-controlled pulse width modulation control scheme yielded improved motor current waveforms. The ac controller favors a higher system voltage