A low-voltage CMOS-compatible time-domain photodetector, device & front end electronics

During the last decades, the usage of silicon photodetectors, both as stand-alone sensor or integrated in arrays, grew tremendously. They are now found in almost any application and any market range, from leisure products to high-end scientific apparatuses, including, among others, industrial, automotive, and medical equipment. The impressive growth in photodetector applications is closely linked to the development of CMOS technology, which now offers inexpensive and efficient analog and digi-tal signal processing capabilities. Detectors are often integrated with their respective front end and application-specific digital circuit on the same silicon die, forming complete systems on chip. In some cases the detector itself is not on the same chip but often part of the same package. However, this trend of co-integration of analog front end and digital circuits complicates the design of the analog part. The ever-decreasing supply voltage and the smaller transistors in advanced processes (which are driven by the development of digital cir-cuits) negatively impact the performance of the analog structures and complicates their design. For photodetector systems, the effect most importantly translates into a degradation of dynamic range and signal-to-noise ratio. One way to circumvent the problem of low supply voltages is to shift the operation from voltage domain to time domain. By doing so, the signal is no longer constrained by the supply rails and analog amplification is avoided. The signal takes the form of a time-based modulation, such as pulse-width modulation or pulse-frequency modulation. Another advantage is that the output signal of a time-domain photodetection system is directly interfaceable with digital circuits. In this work, a new type of CMOS-compatible photodetector displaying intrinsic light-to-time conversion is proposed. Its physical structure consists of a MOS gate interleaved with a PN junction. The MOS structure is acting as a photogate. The depletion region shrinks when photogenerated carriers fill the potential well. At some point, the anode of the PN structure is de-isolated from the rest of the detector and triggers a positive-feedback effect that leads to a very steep current increase through the PN-junction. This translates into a signal of very high amplitude and independent from light-intensity, which can be almost directly interfaced with digital circuits. This simplifies the front end circuit compared to photodiode-based systems. The physical behavior of the device is analyzed with the help of TCAD simulations and simple behavioral and shot-noise models are proposed. The device has been co-integrated with its driver and front end circuit in a standard CMOS process and its characteristics have been measured with a custom-made measurement system. The effect of bias parameters on the performance of the sensor are also analyzed. The limitations of the device are discussed, the most important ones being dark current and linearity. Techno-logical solutions, such as the implementation of the detector on Silicon-on-Insulator technology, are proposed to overcome the limitations. Finally, some application demonstrators have been realized. Other applications that could benefit from the detector are suggested, such as digital applications taking advantage of the latching behavior of the device, and a Photoplethysmography (PPG) system that uses a PLL-based control loop to minimize the emitting LED-current

Si-based Germanium Tin Photodetectors for Short-Wave and Mid-Wave Infrared Detections

The demand of light-weight and inexpensive imaging system working in the infrared range keeps increasing for the last decade, especially for civil applications. Although several group IV materials such as silicon and germanium are used to realize detectors in the visible and near infrared region, they are not the efficient approach for imaging system in the short-wave infrared detection range and beyond due to bandgap limit. On the other hand, this market is heavily relied upon mature technology from III-V and II-VI elements over years, which are costly to growth and incompatible with available Si complementary metal-oxide-semiconductor (CMOS) foundries. This limits the fabrication of large scale focal plan arrays detectors in this detection range. Therefore, a material system that meets the necessary requirements has long been in demand. The Ge1-xSnx material system has been introduced as a potential solution for low-cost high-performance photodetector for short-wave infrared towards mid-infrared detections due to its compatibility with Si CMOS process and wide detection range by incorporating more Sn in the alloy. Since then, immense growth efforts have been made to improve the material quality reaching device-quality using commercial chemical vapor deposition (CVD) reactors or molecular beam epitaxy (MBE) chambers. This dissertation will develop Si-based GeSn photodetectors technology to realize low-cost high-performance focal plane arrays detectors working in the SWIR towards MIR. It began with the development of fabrication process of single element GeSn photoconductor and photodiode, followed by systematic characterization and analysis of detectors’ figures of merits to provide a more optimized structure. A peak responsivity of 20 A/W (photoconductor) and 0.34 A/W (photodiode) at 2 µm were achieved. An external quantum efficiency of 20 % was reported for the first time. The highest value of specific detectivity D* is only 3-4 times less than commercially available Extended-InGaAs detector. Surface passivation technique was also pursued to reduce surface leakage current. Finally, infrared imaging capability was demonstrated using single pixel detector. The study involves a wide range of Sn composition from 10 to 22 %

Exploitation of magnetic dipole resonances in metal–insulator–metal plasmonic nanostructures to selectively filter visible light

Significant improvement in using plasmonic nanostructures for practical color filtering and multispectral imaging applications is achieved by exploiting the coupling of surface plasmons with dielectric optical cavity resonances within a hexagonal array of subwavelength holes in a thin CMOS-compatible metal–insulator–metal stack. This polarization-independent architecture overcomes the limitations of all previously reported plasmonic color filters, namely poor transmission and broad band-pass characteristic, effectively providing a compact approach for high color accuracy multispectral and filtering technologies. Measured transmission efficiencies up to 60% and full-width at half-maximum between 45 and 55 nm along the entire visible spectrum are achieved, an impressive and unique combination of features that has never been reported before. The nanostructure exploits the phenomenon of extraordinary optical transmission and magnetic dipole modes to efficiently filter visible light. The presence of magnetic resonances in the optical regime is an unusual property, previously reported in photonic metamaterials or dielectric nanoparticles. The physical insights established from the electromagnetic near-field patterns are used to accurately tailor the optical properties of the filters. The nonideality of the fabrication at the nanoscale is addressed, the issues encountered highlighted, and alternative solutions proposed and verified, demonstrating that the working principle of the MIM structure can be successfully extended to other materials and structural parameters

Photodetectors

In this book some recent advances in development of photodetectors and photodetection systems for specific applications are included. In the first section of the book nine different types of photodetectors and their characteristics are presented. Next, some theoretical aspects and simulations are discussed. The last eight chapters are devoted to the development of photodetection systems for imaging, particle size analysis, transfers of time, measurement of vibrations, magnetic field, polarization of light, and particle energy. The book is addressed to students, engineers, and researchers working in the field of photonics and advanced technologies