Variability-aware low-power techniques for nanoscale mixed-signal circuits.

New circuit design techniques that accommodate lower supply voltages necessary for portable systems need to be integrated into the semiconductor intellectual property (IP) core. Systems that once worked at 3.3 V or 2.5 V now need to work at 1.8 V or lower, without causing any performance degradation. Also, the fluctuation of device characteristics caused by process variation in nanometer technologies is seen as design yield loss. The numerous parasitic effects induced by layouts, especially for high-performance and high-speed circuits, pose a problem for IC design. Lack of exact layout information during circuit sizing leads to long design iterations involving time-consuming runs of complex tools. There is a strong need for low-power, high-performance, parasitic-aware and process-variation-tolerant circuit design. This dissertation proposes methodologies and techniques to achieve variability, power, performance, and parasitic-aware circuit designs. Three approaches are proposed: the single iteration automatic approach, the hybrid Monte Carlo and design of experiments (DOE) approach, and the corner-based approach. Widely used mixed-signal circuits such as analog-to-digital converter (ADC), voltage controlled oscillator (VCO), voltage level converter and active pixel sensor (APS) have been designed at nanoscale complementary metal oxide semiconductor (CMOS) and subjected to the proposed methodologies. The effectiveness of the proposed methodologies has been demonstrated through exhaustive simulations. Apart from these methodologies, the application of dual-oxide and dual-threshold techniques at circuit level in order to minimize power and leakage is also explored

Simulation study of scaling design, performance characterization, statistical variability and reliability of decananometer MOSFETs

This thesis describes a comprehensive, simulation based scaling study – including device design, performance characterization, and the impact of statistical variability – on deca-nanometer bulk MOSFETs. After careful calibration of fabrication processes and electrical characteristics for n- and p-MOSFETs with 35 nm physical gate length, 1 nm EOT and stress engineering, the simulated devices closely match the performance of contemporary 45 nm CMOS technologies. Scaling to 25 nm, 18 nm and 13 nm gate length n and p devices follows generalized scaling rules, augmented by physically realistic constraints and the introduction of high-k/metal-gate stacks. The scaled devices attain the performance stipulated by the ITRS. Device a.c. performance is analyzed, at device and circuit level. Extrinsic parasitics become critical to nano-CMOS device performance. The thesis describes device capacitance components, analyzes the CMOS inverter, and obtains new insights into the inverter propagation delay in nano-CMOS. The projection of a.c. performance of scaled devices is obtained. The statistical variability of electrical characteristics, due to intrinsic parameter fluctuation sources, in contemporary and scaled decananometer MOSFETs is systematically investigated for the first time. The statistical variability sources: random discrete dopants, gate line edge roughness and poly-silicon granularity are simulated, in combination, in an ensemble of microscopically different devices. An increasing trend in the standard deviation of the threshold voltage as a function of scaling is observed. The introduction of high-k/metal gates improves electrostatic integrity and slows this trend. Statistical evaluations of variability in Ion and Ioff as a function of scaling are also performed. For the first time, the impact of strain on statistical variability is studied. Gate line edge roughness results in areas of local channel shortening, accompanied by locally increased strain, both effects increasing the local current. Variations are observed in both the drive current, and in the drive current enhancement normally expected from the application of strain. In addition, the effects of shallow trench isolation (STI) on MOSFET performance and on its statistical variability are investigated for the first time. The inverse-narrow-width effect of STI enhances the current density adjacent to it. This leads to a local enhancement of the influence of junction shapes adjacent to the STI. There is also a statistical impact on the threshold voltage due to random STI induced traps at the silicon/oxide interface

Transmission gate based dual rail logic for differential power analysis resistant circuits

Cryptographic devices with hardware implementation of the algorithms are increasingly being used in various applications. As a consequence, there is an increased need for security against the attacks on the cryptographic system. Among various attack techniques, side channel attacks pose a significant threat to the hardware implementation. Power analysis attacks are a type of side channel attack where the power leakage from the underlying hardware is used to eavesdrop on the hardware operation. Wave pipelined differential and dynamic logic (WDDL) has been found to be an effective countermeasure to power analysis. This thesis studies the use of transmission gate based WDDL implementation for the differential and dynamic logic. Although WDDL is an effective defense against power analysis, the number of gates needed for the design of a secure implementation is double the number of gates used for non-secure operations. In this thesis we propose transmission gate based structures for implementation of wave pipelined dynamic and differential logic to minimize the overhead of this defense against power analysis attacks. A transmission gate WDDL design methodology is presented, and the design and analysis of a secure multiplier is given. The adder structures are compared in terms of security effectiveness and silicon area overhead for three cases: unsecured logic implementation, standard gate WDDL, and transmission gate WDDL. In simulation, the transmission gate WDDL design is seen to have similar power consumption results compared to the standard gate WDDL; however, the transmission gate based circuit uses 10-50% fewer gates compared to the static WDDL

An adiabatic charge pump based charge recycling design style

A typical CMOS gate draws charge equal to C[subscript L]Vdd2 from the power supply (Vdd) where C[subscript L] is the load capacitance. Half of the energy is dissipated in the pull-up p-type network, and the other half is dissipated in the pull-down n-type network. Adiabatic CMOS circuit reduces the dissipated energy by providing the charge at a rate significantly lower than the inherent RC delay of the gate. The charge can also be recovered with an RLC oscillator based power supply. However, the two main problems with adiabatic design style are the design of a high frequency RLC oscillator for the power supply, and the need to slow down the rate of charge supply for lower energy. This reduction in speed of operation renders this adiabatic technique inapplicable in certain situations. A new approach incorporating an adiabatic charge pump that moves the slower adiabatic components away from the critical path of the logic is proposed in this work. The adiabatic delays of a charge pump are overlapped with the computing path logic delays. Hence, the proposed charge pump based recycling technique is especially effective for pipelined datapath computations (digital signal processing, DSP, is such a domain) where timing considerations are important. Also the proposed design style does not interfere with the critical path of the system, and hence the delay introduced by this scheme does not reduce the overall computational speed. In this work, we propose one implementation schema that involves tapping the ground-bound charge in a capacitor (virtual ground) and using an adiabatic charge-pump circuit to feed internal virtual power supplies. As the design relies on leakage charge to generate virtual power supplies, it is most effective in large circuits that undergo considerable switching activity resulting in substantial charge tapping by the proposed scheme. The proposed method has been implemented in DSP applications like FIR filter, DCT/IDCT filters and FFT filters. Simulations results in SPICE indicate that the proposed scheme reduces energy consumption in these DSP circuits by as much as 18% with no loss in performance, paving way for a new approach towards conserving energy in complex digital systems

ILP-based Supply and Threshold Voltage Assignment For Total Power Minimization

In this paper we present an ILP-based method to simultaneously assign supply and threshold voltages to individual gates for dynamic and leakage power minimization. In our three-step approach, low power min-flipflop (FF) retiming is first performed to reduce the clock period while taking the FF delay/power into consideration. Next, the subsequent voltage assignment formulated in ILP makes the best possible supply/threshold voltage assignment under the given clock period constraint set by the retiming. Finally, a post-process further refines the voltage assignment solution by exploiting the remaining timing slack in the circuit. Related experiments show that the min-FF retiming plus simultaneous Vdd/Vth assignment approach outperforms the existing max-FF retiming plus Vdd-only assignment approach