A review of advances in pixel detectors for experiments with high rate and radiation

The Large Hadron Collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog. Phy

異種ダイレット積層を用いたフレキシブルハイブリッドデバイスの集積技術に関する研究

Tohoku University福島誉史課

Méthodologies de conception ASIC pour des systèmes sur puce 3D hétérogènes à base de réseaux sur puce 3D

Dans cette thèse, nous étudions les architectures 3D NoC grâce à des implémentations de conception physiques en utilisant la technologie 3D réel mis en oeuvre dans l'industrie. Sur la base des listes d'interconnexions en déroute, nous procédons à l'analyse des performances d'évaluer le bénéfice de l'architecture 3D par rapport à sa mise en oeuvre 2D. Sur la base du flot de conception 3D proposé en se concentrant sur la vérification temporelle tirant parti de l'avantage du retard négligeable de la structure de microbilles pour les connexions verticales, nous avons mené techniques de partitionnement de NoC 3D basé sur l'architecture MPSoC y compris empilement homogène et hétérogène en utilisant Tezzaron 3D IC technlogy. Conception et mise en oeuvre de compromis dans les deux méthodes de partitionnement est étudiée pour avoir un meilleur aperçu sur l'architecture 3D de sorte qu'il peut être exploitée pour des performances optimales. En utilisant l'approche 3D homogène empilage, NoC topologies est explorée afin d'identifier la meilleure topologie entre la topologie 2D et 3D pour la mise en œuvre MPSoC 3D sous l'hypothèse que les chemins critiques est fondée sur les liens inter-routeur. Les explorations architecturales ont également examiné les différentes technologies de traitement. mettant en évidence l'effet de la technologie des procédés à la performance d'architecture 3D en particulier pour l'interconnexion dominant du design. En outre, nous avons effectué hétérogène 3D d'empilage pour la mise en oeuvre MPSoC avec l'approche GALS de style et présenté plusieurs analyses de conception physiques connexes concernant la conception 3D et la mise en œuvre MPSoC utilisant des outils de CAO 2D. Une analyse plus approfondie de l'effet microbilles pas à la performance de l'architecture 3D à l'aide face-à-face d'empilement est également signalé l'identification des problèmes et des limitations à prendre en considération pendant le processus de conception.In this thesis, we study the exploration 3D NoC architectures through physical design implementations using real 3D technology used in the industry. Based on the proposed 3D design flow focusing on timing verification by leveraging the benefit of negligible delay of microbumps structure for vertical connections, we have conducted partitioning techniques for 3D NoC-based MPSoC architecture including homogeneous and heterogeneous stacking using Tezzaron 3D IC technlogy. Design and implementation trade-off in both partitioning methods is investigated to have better insight about 3D architecture so that it can be exploited for optimal performance. Using homogeneous 3D stacking approach, NoC architectures are explored to identify the best topology between 2D and 3D topology for 3D MPSoC implementation. The architectural explorations have also considered different process technologies highlighting the wire delay effect to the 3D architecture performance especially for interconnect-dominated design. Additionally, we performed heterogeneous 3D stacking of NoC-based MPSoC implementation with GALS style approach and presented several physical designs related analyses regarding 3D MPSoC design and implementation using 2D EDA tools. Finally we conducted an exploration of 2D EDA tool on different 3D architecture to evaluate the impact of 2D EDA tools on the 3D architecture performance. Since there is no commercialize 3D design tool until now, the experiment is important on the basis that designing 3D architecture using 2D EDA tools does not have a strong and direct impact to the 3D architecture performance mainly because the tools is dedicated for 2D architecture design.SAVOIE-SCD - Bib.électronique (730659901) / SudocGRENOBLE1/INP-Bib.électronique (384210012) / SudocGRENOBLE2/3-Bib.électronique (384219901) / SudocSudocFranceF

Manufacturing of three dimensional integrated circuits

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2007.Includes bibliographical references (p. 221-231).Along with scaling down in size, novel materials have been introduced into the semiconductor industry to enable continued improvements in performance and cost as predicted by Moore's law. It has become important now more than ever to include an environmental impact evaluation of future technologies, before they are introduced into manufacturing, in order to identify potentially environmentally harmful materials or processes and understand their implications, costs, and mitigation requirements. In this thesis, we introduce a methodology to compare alternative options on the environmental axis, along with the cost and performance axes, in order to create environmentally aware and benign technologies. This methodology also helps to identify potential performance and cost issues in novel technologies by taking a transparent and bottoms-up assessment approach. This methodology is applied to the evaluation of the MIT 3D IC technology in comparison to a standard CMOS 2D IC approach. Both options are compared on all three axes - performance, cost and environmental impact.(cont.) The "handle wafer" unit process in the existing 3D IC technology, which is a crucial process for back-to-face integration, is found to have a large environmental impact because of its use of thick metal sacrificial layers and high energy consumption. We explore three different handle wafer options, between-die channel, oxide release layer, and alternative low-temperature permanent bonding. The first two approaches use a chemical handle wafer release mechanism; while the third explores solid liquid inter-diffusion (SLID) bonding using copper-indium at 2000C. Preliminary results for copper-indium bonding indicate that a sub-micron thick multi-layer copper-indium stack, when bonded to a 300 nm thick copper film results in large voids in the bonding interface primarily due to rough as-deposited films. Finally, we conduct an overall assessment of these and other proposed handle wafer technologies. The overall assessment shows that but the oxide release layer approach appears promising; however, each process option has its strength and weaknesses, which need to be understood and pursued accordingly.by Ajay Somani.Ph.D

Self-Aligned 3D Chip Integration Technology and Through-Silicon Serial Data Transmission

The emerging three-dimensional (3D) integration technology is expected to lead to an industry paradigm shift due to its tremendous benefits. Intense research activities are going on about technology, simulation, design, and product prototypes. This thesis work aims at fabricating through-silicon vias (TSVs) on diced processor chips, and later bonding them into a 3D-stacked chip. How to handle and process delicate processor chips with high alignment precision is a key issue. The TSV process to be developed also needs to adapt to this constraint. Four TSV processes have been studied. Among them, the ring-trench TSV process demonstrates the feasibility of fabricating TSVs with the prevailing dimensions, and the whole-through TSV process achieves the first dummy chip post-processed with TSVs in EPFL although the dimension is rather large to keep a reasonable aspect ratio (AR). Four self-alignment (SA) techniques have been investigated, among which the gravitational SA and the hydrophobic SA are found to be quite promising. Using gravitational SA, we come to the conclusion that cavities in silicon carrier wafer with a profile angle of 60° can align the chips with less than 20 µm inaccuracies. The alignment precision can be improved after adopting more advanced dicing tools instead of using the traditional dicing saws and larger cavity profile angle. Such inaccuracy will be sufficient to align the relatively large TSVs for general products such as 3D image sensors. By fabricating bottom TSVs in the carrier wafer, a 3D silicon interposer idea has been proposed to stack another chip, e.g. a processor chip, on the other side of the carrier wafer. But stacking microprocessor chips fabricated with TSVs will require higher alignment precision. A hydrophobic SA technique using the surface tension force generated by the water-to-air interfaces around the pads can greatly reduce the alignment inaccuracy to less than 1 µm. This low-cost and high throughput SA procedure is processed in air, fully-compatible with current fabrication technologies, and highly stable and repeatable. We present a theoretical meniscus model to predict SA results and to provide the design rules. This technique is quite promising for advanced 3D applications involving logic and heterogeneous stacking. As TSVs' dimensions in the chip-level 3D integration are constrained by the chip-level processes, such as bonding, the smallest TSVs might still be about 5 µm. Thus, the area occupied by the TSVs cannot be neglected. Fortunately, TSVs can withstand very high bandwidths, meaning that data can be serialized and transmitted using less numbers of TSVs. With 20 µm TSVs, the 2-Gb/s 8:1 serial link implemented saves 75% of the area of its 8-bit parallel counterpart. The quasi-serial link proposed can effectively balance the inter-layer bandwidth and the serial links' area consumption. The area model of the serial or quasi-serial links working under higher frequencies provides some guidelines to choose the proper serial link design, and it also predicts that when TSV diameter shrinks to 5 µm, it will be difficult to keep this area benefit if without some novel circuit design techniques. As the serial links can be implemented with less area, the bandwidth per unit area is increased. Two scenarios are studied, single-port memory access and multi-port memory access. The expanded inter-layer bandwidth by serialization does not improve the system performance because of the bus-bottleneck problem. In the latter scenario, the inter-layer ultra-wide bandwidth can be exploited as each memory bank can be accessed randomly through the NoC. Thus further widening the inter-layer bandwidth through serialization, the system performance will be improved

Design automation and analysis of three-dimensional integrated circuits

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.Includes bibliographical references (p. 165-176).This dissertation concerns the design of circuits and systems for an emerging technology known as three-dimensional integration. By stacking individual components, dice, or whole wafers using a high-density electromechanical interconnect, three-dimensional integration can achieve scalability and performance exceeding that of conventional fabrication technologies. There are two main contributions of this thesis. The first is a computer-aided design flow for the digital components of a three-dimensional integrated circuit (3-D IC). This flow primarily consists of two software tools: PR3D, a placement and routing tool for custom 3-D ICs based on standard cells, and 3-D Magic, a tool for designing, editing, and testing physical layout characteristics of 3-D ICs. The second contribution of this thesis is a performance analysis of the digital components of 3-D ICs. We use the above tools to determine the extent to which 3-D integration can improve timing, energy, and thermal performance. In doing so, we verify the estimates of stochastic computational models for 3-D IC interconnects and find that the models predict the optimal 3-D wire length to within 20% accuracy. We expand upon this analysis by examining how 3-D technology factors affect the optimal wire length that can be obtained. Our ultimate analysis extends this work by directly considering timing and energy in 3-D ICs. In all cases we find that significant performance improvements are possible. In contrast, thermal performance is expected to worsen with the use of 3-D integration. We examine precisely how thermal behavior scales in 3-D integration and determine quantitatively how the temperature may be controlled during the circuit placement process. We also show how advanced packaging(cont.) technologies may be leveraged to maintain acceptable die temperatures in 3-D ICs. Finally, we explore two issues for the future of 3-D integration. We determine how technology scaling impacts the effect of 3-D integration on circuit performance. We also consider how to improve the performance of digital components in a mixed-signal 3-D integrated circuit. We conclude with a look towards future 3-D IC design tools.by Shamik Das.Ph.D

Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-Force magnetometers

Tesi en modalitat de compendi de publicacionsToday, the most common form of mass-production semiconductor device fabrication is Complementary Metal-Oxide Semiconductor (CMOS) technology. The dedicated Integrated Circuit (IC) interfaces of commercial sensors are manufactured using this technology. The sensing elements are generally implemented using Micro-Electro-Mechanical-Systems (MEMS), which need to be manufactured using specialized micro-machining processes. Finally, the CMOS circuitry and the MEMS should ideally be combined in a single package. For some applications, integration of CMOS electronics and MEMS devices on a single chip (CMOS-MEMS) has the potential of reducing fabrication costs, size, parasitics and power consumption, compared to other integration approaches. Remarkably, a CMOS-MEMS device may be built with the back-end-of-line (BEOL) layers of the CMOS process. But, despite its advantages, this particular approach has proven to be very challenging given the current lack of commercial products in the market. The main objective of this Thesis is to prove that a high-performance MEMS, sealed and packaged in a standard package, may be accurately modeled and manufactured using the BEOL layers of a CMOS process in a reliable way. To attain this, the first highly reliable novel CMOS-MEMS Lorentz Force Magnetometer (LFM) was successfully designed, modeled, manufactured, characterized and subjected to several reliability tests, obtaining a comparable or superior performance to the typical solid-state magnetometers used in current smartphones. A novel technique to avoid magnetic offsets, the main drawback of LFMs, was presented and its performance confirmed experimentally. Initially, the issues encountered in the manufacturing process of MEMS using the BEOL layers of the CMOS process were discouraging. Vapor HF release of MEMS structures using the BEOL of CMOS wafers resulted in undesirable damaging effects that may lead to the conclusion that this manufacturing approach is not feasible. However, design techniques and workarounds for dealing with the observed issues were devised, tested and implemented in the design of the LFM presented in this Thesis, showing a clear path to successfully fabricate different MEMS devices using the BEOL.Hoy en día, la forma más común de producción en masa es una tecnología llamada Complementary Metal-Oxide Semiconductor (CMOS). La interfaz de los circuitos integrados (IC) de sensores comerciales se fabrica usando, precisamente, esta tecnología. Actualmente es común que los sensores se implementen usando Sistemas Micro-Electro-Mecánicos (MEMS), que necesitan ser fabricados usando procesos especiales de micro-mecanizado. En un último paso, la circuitería CMOS y el MEMS se combinan en un único elemento, llamado package. En algunas aplicaciones, la integración de la electrónica CMOS y los dispositivos MEMS en un único chip (CMOS-MEMS) alberga el potencial de reducir los costes de fabricación, el tamaño, los parásitos y el consumo, al compararla con otras formas de integración. Resulta notable que un dispositivo CMOS-MEMS pueda ser construido con las capas del back-end-of-line (BEOL) de un proceso CMOS. Pero, a pesar de sus ventajas, este enfoque ha demostrado ser un gran desafío como demuestra la falta de productos comerciales en el mercado. El objetivo principal de esta Tesis es probar que un MEMS de altas prestaciones, sellado y empaquetado en un encapsulado estándar, puede ser correctamente modelado y fabricado de una manera fiable usando las capas del BEOL de un proceso CMOS. Para probar esto mismo, el primer magnetómetro CMOS-MEMS de fuerza de Lorentz (LFM) fue exitosamente diseñado, modelado, fabricado, caracterizado y sometido a varias pruebas de fiabilidad, obteniendo un rendimiento comparable o superior al de los típicos magnetómetros de estado sólido, los cuales son usados en móviles actuales. Cabe destacar que en esta Tesis se presenta una novedosa técnica con la que se evitan offsets magnéticos, el mayor inconveniente de los magnetómetros de fuerza Lorentz. Su efectividad fue confirmada experimentalmente. En los inicios, los problemas asociados al proceso de fabricación de MEMS usando las capas BEOL de obleas CMOS resultaba desalentador. Liberar estructuras MEMS hechas con obleas CMOS con vapor de HF producía efectos no deseados que bien podrían llevar a la conclusión de que este enfoque de fabricación no es viable. Sin embargo, se idearon y probaron técnicas de diseño especiales y soluciones ad-hoc para contrarrestar estos efectos no deseados. Se implementaron en el diseño del magnetómetro de Lorentz presentado en esta Tesis, arrojando excelentes resultados, lo cual despeja el camino hacia la fabricación de diferentes dispositivos MEMS usando las capas BEOL.Postprint (published version

DEVELOPMENT OF NANO/MICROELECTROMECHANICAL SYSTEM (N/MEMS) SWITCHES

Ph.DDOCTOR OF PHILOSOPH

Strategies and techniques for fabricating MEMS bistable thermal actuators.

Bistable elements are beginning to appear in the field of MEMS as they allow engineers to design sensors and actuators which require no electrical power and possess mechanical memory. This research focuses on the development of novel strategies and techniques for fabricating MEMS bistable structures to serve as no electrical power thermal actuators. Two parallel strategies were explored for the design and fabrication of the critical bistable element. Both strategies involved an extensive material study on candidate thin film materials to determine their temperature coefficient of expansion and as-deposited internal stress properties. Materials investigated included titanium tungsten, Invar, silicon nitride and amorphous silicon deposited using either sputtering or PECVD. Deposition parameters were experimentally determined to produce tensile, compressive and stress-free films. A full set of graphs are presented. To address the 3D MEMS topology challenge required for bistability, this research explored two different strategies for fabricating 3D non-planar hemispherical dome structures using minimal processing steps. The first approach used the thermal/chemical reflow of resist, along with traditional binary lithography with a single photomask. Specific thermal/chemical reflow conditions were experimentally developed to produce hemispherical dome over a wide range. The second approach introduced a novel maskless procedure for fabricating the dome using grayscale lithography. After evaluating the above results, it was decided to use engineered compressive stress in released thin film sandwiches to form the 3D dome structures required for bistable actuation. Three different types of released multi-layer diaphragms were studied: 1) oxide-polyimide diaphragms, 2) oxide-aluminum diaphragms, and 3) oxide-aluminum-polyimide diaphragms