COHERENT/INCOHERENT MAGNETIZATION DYNAMICS OF NANOMAGNETIC DEVICES FOR ULTRA-LOW ENERGY COMPUTING

Nanomagnetic computing devices are inherently nonvolatile and show unique transfer characteristics while their switching energy requirements are on par, if not better than state of the art CMOS based devices. These characteristics make them very attractive for both Boolean and non-Boolean computing applications. Among different strategies employed to switch nanomagnetic computing devices e.g. magnetic field, spin transfer torque, spin orbit torque etc., strain induced switching has been shown to be among the most energy efficient. Strain switched nanomagnetic devices are also amenable for non-Boolean computing applications. Such strain mediated magnetization switching, termed here as “Straintronics”, is implemented by switching the magnetization of the magnetic layer of a magnetostrictive-piezoelectric nanoscale heterostructure by applying an electric field in the underlying piezoelectric layer. The modes of “straintronic” switching: coherent vs. incoherent switching of spins can affect device performance such as speed, energy dissipation and switching error in such devices. There was relatively little research performed on understanding the switching mechanism (coherent vs. incoherent) in xiv straintronic devices and their adaptation for non-Boolean computing, both of which have been studied in this thesis. Detailed studies of the effects of nanomagnet geometry and size on the coherence of the switching process and ultimately device performance of such strain switched nanomagnetic devices have been performed. These studies also contributed in optimizing designs for low energy, low dynamic error operation of straintronic logic devices and identified avenues for further research. A Novel non-Boolean “straintronic” computing device (Ternary Content Addressable Memory, abbreviated as TCAM) has been proposed and evaluated through numerical simulations. This device showed significant improvement over existing CMOS device based TCAM implementation in terms of scaling, energy-delay product, operational simplicity etc. The experimental part of this thesis answered a very fundamental question in strain induced magnetization rotation. Specifically, this experiment studied the variation in magnetization orientation for strain induced magnetization rotation along the thickness of a magnetostrictive thin film using polarized neutron reflectometry and demonstrated non-uniform magnetization rotation along the thickness of the sample. Additional experimental work was performed to lay the groundwork for ultra-low voltage straintronic switching demonstration. Preliminary sample fabrication and characterization that can potentially lead to low voltage (~10-100 mV) operation and local clocking of such devices has been performed

Quantum-dot Cellular Automata: Review Paper

Quantum-dot Cellular Automata (QCA) is one of the most important discoveries that will be the successful alternative for CMOS technology in the near future. An important feature of this technique, which has attracted the attention of many researchers, is that it is characterized by its low energy consumption, high speed and small size compared with CMOS.  Inverter and majority gate are the basic building blocks for QCA circuits where it can design the most logical circuit using these gates with help of QCA wire. Due to the lack of availability of review papers, this paper will be a destination for many people who are interested in the QCA field and to know how it works and why it had taken lots of attention recentl

Designing memory cells with a novel approaches based on a new multiplexer in QCA Technology

Transistor-based CMOS technology has many drawbacks such that it cannot continue to follow the scaling of Moore’s law in the near future. These drawbacks lead researchers to think about alternatives. Quantum-dot Cellular Automata (QCA) is a nanotechnology that has unique features in terms of size and power consumption. QCA has the ability to represent binary numbers by electrons configuration. The memory circuit is a very important part of the digital system. In QCA technology, there are many approaches presented to accomplish memory cells in both RAM and CAM types. CAM is a type of memory used in high-speed applications. In this thesis, novel approaches to design memory cells are proposed. The proposed approaches are based on a 2:1 multiplexer. Using the proposed approach of RAM cell, a singular form of RAM cell (SFRAMC) is accomplished. In QCA technology, researchers strive to design electronic circuits with an emphasis on minimizing important metrics such as cell count, area, delay, cost and power consumption. The SFRAMC demonstrated significant improvements, with a reduction cell count, occupied area and power consumption by 25%, 24% and 36%. In terms of implementation cost, the SFRAMC saves 43% of the cost when compared to the previous best design. On the other hand, by using the proposed approach of CAM cell, two different structures of the QCA-CAM cell have been introduced. The first proposed CAM cell (FPCAMC) gives improvements in terms of cell count, and delay by 15% and 17% respectively. The second proposed CAM cell (SPCAMC) gives improvements in terms of cell count, and delay by 6% and 17% respectively. In terms of total power consumption, both FPCAMC and SPCAMC have an improvement of about 53% over the best-reported design. The above features of the proposed memory cells (RAM and CAM) could pave the road for designing energy-efficient and cost-efficient memory circuits in the future

Memristor based neural networks: Feasibility, theories and approaches

Memristor-based neural networks refer to the utilisation of memristors, the newly emerged nanoscale devices, in building neural networks. The memristor was first postulated by Leon Chua in 1971 as the fourth fundamental passive circuit element and experimentally validated by one of HP labs in 2008. Memristors, short for memory-resistor, have a peculiar memory effect which distinguishes them from resistors. By applying a bias voltage across it, the resistance of a memristor, namely memristance, is changed. In addition, the memristance is retained when the power supply is removed which demonstrates the non-volatility of the memristor. Memristor-based neural networks are currently being researched in order to replace complementary metal-oxide-semiconductor (CMOS) devices in neuromorphic circuits with memristors and to investigate their potential applications. Current research primarily focuses on the utilisation of memristors as synaptic connections between neurons, however in any application it may be possible to allow memristors to perform computation in a natural way which attempts to avoid additional CMOS devices. Examples of such methods utilised in neural networks are presented in this thesis, such as memristor-based cellular neural network (CNN) structures, the memristive spiking-time dependent plasticity (STDP) model and the exploration of their potential applications. This thesis presents manifold studies in the topic of memristor-based neural networks from theories and feasibility to approaches to implementations. Studies are divided into two parts which are the utilisation of memristors in non-spiking neural networks and spiking neural networks (SNNs). At the beginning of the thesis, fundamentals of neural networks and memristors are explored with the analysis of the physical properties and $v-i$ behaviour of memristors. In the studies of memristor-based non-spiking neural networks, a staircase memristor model is presented based on memristors which have multi-level resistive states and the delayed-switching effect. This model is adapted to CNNs and echo state networks (ESNs) as applications that benefit from memristive implementations. In the studies of memristor-based SNNs, a trace-based memristive STDP model is proposed and discussed to overcome the incompatibility issues of the previous model with all-to-all spike interaction. The work also presents applications of the trace-based memristive model in associative learning with retention loss and supervised learning. The computational results of experiments with different applications have shown that memristor-based neural networks will be advantageous in building synchronous or asynchronous parallel neuromorphic systems. The work presents several new findings on memristor modelling, memristor-based neural network structures and memristor-based associative learning. These studies address unexplored research areas in the context of memristor-based neural networks to the best of our knowledge, and therefore form original contributions

ENERGY-EFFICIENT AND SECURE HARDWARE FOR INTERNET OF THINGS (IoT) DEVICES

Internet of Things (IoT) is a network of devices that are connected through the Internet to exchange the data for intelligent applications. Though IoT devices provide several advantages to improve the quality of life, they also present challenges related to security. The security issues related to IoT devices include leakage of information through Differential Power Analysis (DPA) based side channel attacks, authentication, piracy, etc. DPA is a type of side-channel attack where the attacker monitors the power consumption of the device to guess the secret key stored in it. There are several countermeasures to overcome DPA attacks. However, most of the existing countermeasures consume high power which makes them not suitable to implement in power constraint devices. IoT devices are battery operated, hence it is important to investigate the methods to design energy-efficient and secure IoT devices not susceptible to DPA attacks. In this research, we have explored the usefulness of a novel computing platform called adiabatic logic, low-leakage FinFET devices and Magnetic Tunnel Junction (MTJ) Logic-in-Memory (LiM) architecture to design energy-efficient and DPA secure hardware. Further, we have also explored the usefulness of adiabatic logic in the design of energy-efficient and reliable Physically Unclonable Function (PUF) circuits to overcome the authentication and piracy issues in IoT devices. Adiabatic logic is a low-power circuit design technique to design energy-efficient hardware. Adiabatic logic has reduced dynamic switching energy loss due to the recycling of charge to the power clock. As the first contribution of this dissertation, we have proposed a novel DPA-resistant adiabatic logic family called Energy-Efficient Secure Positive Feedback Adiabatic Logic (EE-SPFAL). EE-SPFAL based circuits are energy-efficient compared to the conventional CMOS based design because of recycling the charge after every clock cycle. Further, EE-SPFAL based circuits consume uniform power irrespective of input data transition which makes them resilience against DPA attacks. Scaling of CMOS transistors have served the industry for more than 50 years in providing integrated circuits that are denser, and cheaper along with its high performance, and low power. However, scaling of the transistors leads to increase in leakage current. Increase in leakage current reduces the energy-efficiency of the computing circuits,and increases their vulnerability to DPA attack. Hence, it is important to investigate the crypto circuits in low leakage devices such as FinFET to make them energy-efficient and DPA resistant. In this dissertation, we have proposed a novel FinFET based Secure Adiabatic Logic (FinSAL) family. FinSAL based designs utilize the low-leakage FinFET device along with adiabatic logic principles to improve energy-efficiency along with its resistance against DPA attack. Recently, Magnetic Tunnel Junction (MTJ)/CMOS based Logic-in-Memory (LiM) circuits have been explored to design low-power non-volatile hardware. Some of the advantages of MTJ device include non-volatility, near-zero leakage power, high integration density and easy compatibility with CMOS devices. However, the differences in power consumption between the switching of MTJ devices increase the vulnerability of Differential Power Analysis (DPA) based side-channel attack. Further, the MTJ/CMOS hybrid logic circuits which require frequent switching of MTJs are not very energy-efficient due to the significant energy required to switch the MTJ devices. In the third contribution of this dissertation, we have investigated a novel approach of building cryptographic hardware in MTJ/CMOS circuits using Look-Up Table (LUT) based method where the data stored in MTJs are constant during the entire encryption/decryption operation. Currently, high supply voltage is required in both writing and sensing operations of hybrid MTJ/CMOS based LiM circuits which consumes a considerable amount of energy. In order to meet the power budget in low-power devices, it is important to investigate the novel design techniques to design ultra-low-power MTJ/CMOS circuits. In the fourth contribution of this dissertation, we have proposed a novel energy-efficient Secure MTJ/CMOS Logic (SMCL) family. The proposed SMCL logic family consumes uniform power irrespective of data transition in MTJ and more energy-efficient compared to the state-of-art MTJ/ CMOS designs by using charge sharing technique. The other important contribution of this dissertation is the design of reliable Physical Unclonable Function (PUF). Physically Unclonable Function (PUF) are circuits which are used to generate secret keys to avoid the piracy and device authentication problems. However, existing PUFs consume high power and they suffer from the problem of generating unreliable bits. This dissertation have addressed this issue in PUFs by designing a novel adiabatic logic based PUF. The time ramp voltages in adiabatic PUF is utilized to improve the reliability of the PUF along with its energy-efficiency. Reliability of the adiabatic logic based PUF proposed in this dissertation is tested through simulation based temperature variations and supply voltage variations

Architectures for virtualization and performance evaluation in software defined networks

[no abstract

NASA Tech Briefs, June 1997

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