Built-in-self-test of RF front-end circuitry

Fuelled by the ever increasing demand for wireless products and the advent of deep submicron CMOS, RF ICs have become fairly commonplace in the semiconductor market. This has given rise to a new breed of Systems-On-Chip (SOCs) with RF front-ends tightly integrated along with digital, analog and mixed signal circuitry. However, the reliability of the integrated RF front-end continues to be a matter of significant concern and considerable research. A major challenge to the reliability of RF ICs is the fact that their performance is also severely degraded by wide tolerances in on-chip passives and package parasitics, in addition to process related faults. Due to the absence of contact based testing solutions in embedded RF SOCs (because the very act of probing may affect the performance of the RF circuit), coupled with the presence of very few test access nodes, a Built In Self Test approach (BiST) may prove to be the most efficient test scheme. However due to the associated challenges, a comprehensive and low-overhead BiST methodology for on-chip testing of RF ICs has not yet been reported in literature. In the current work, an approach to RF self-test that has hitherto been unexplored both in literature and in the commercial arena is proposed. A sensitive current monitor has been used to extract variations in the supply current drawn by the circuit-under-test (CUT). These variations are then processed in time and frequency domain to develop signatures. The acquired signatures can then be mapped to specific behavioral anomalies and the locations of these anomalies. The CUT is first excited by simple test inputs that can be generated on-chip. The current monitor extracts the corresponding variations in the supply current of the CUT, thereby creating signatures that map to various performance metrics of the circuit. These signatures can then be post-processed by low overhead on-chip circuitry and converted into an accessible form. To be successful in the RF domain any BIST architecture must be minimally invasive, reliable, offer good fault coverage and present low real estate and power overheads. The current-based self-test approach successfully addresses all these concerns. The technique has been applied to RF Low Noise Amplifiers, Mixers and Voltage Controlled Oscillators. The circuitry and post-processing techniques have also been demonstrated in silicon (using the IBM 0.25 micron RF CMOS process). The entire self-test of the RF front-end can be accomplished with a total test time of approximately 30µs, which is several orders of magnitude better than existing commercial test schemes

A Discrete Event System approach to On-line Testing of digital circuits with measurement limitation

AbstractIn the present era of complex systems like avionics, industrial processes, electronic circuits, etc., on-the-fly or on-line fault detection is becoming necessary to provide uninterrupted services. Measurement limitation based fault detection schemes are applied to a wide range of systems because sensors cannot be deployed in all the locations from which measurements are required. This paper focuses towards On-Line Testing (OLT) of faults in digital electronic circuits under measurement limitation using the theory of discrete event systems. Most of the techniques presented in the literature on OLT of digital circuits have emphasized on keeping the scheme non-intrusive, low area overhead, high fault coverage, low detection latency etc. However, minimizing tap points (i.e., measurement limitation) of the circuit under test (CUT) by the on-line tester was not considered. Minimizing tap points reduces load on the CUT and this reduces the area overhead of the tester. However, reduction in tap points compromises fault coverage and detection latency. This work studies the effect of minimizing tap points on fault coverage, detection latency and area overhead. Results on ISCAS89 benchmark circuits illustrate that measurement limitation have minimal impact on fault coverage and detection latency but reduces the area overhead of the tester. Further, it was also found that for a given detection latency and fault coverage, area overhead of the proposed scheme is lower compared to other similar schemes reported in the literature

Dynamic input match correction in R.F. low noise amplifiers

An R.F. circuit that recognizes its faults, and then corrects its performance in real-time has been the holy-grail of RFIC design. This work presents, for the first time, a complete architecture and successful implementation of such a circuit. It is the first step towards the grand vision of fault-free, package independent, integrated R.F. Front End circuitry. The performance of R.F. front-end circuitry can degrade significantly due to process faults and parasitic package inductances at its input. These inductances have wide tolerances and are difficult to co-design for. A novel methodology, which overcomes current obstacles plaguing such an objective, is proposed wherein the affected performance metric of the circuit is quantified, and the appropriate design parameter is modified in real-time, thus enabling self-correction. This proof of concept is demonstrated by designing a cascode LNA and the complete self-correction circuit in IBM 0.25 µm CMOS RF process. The self-correction circuitry ascertains the input match frequency of the circuit by measuring its performance and determines the frequency interval by which it needs to be shifted to restore it to the desired value. It then feeds back a digital word to the LNA which adaptively corrects its input-match. It offers the additional flexibility of using different packages for the front-end since it renders the circuitry independent of package parasitics, by re-calibrating the input match on-the-fly. The circuitry presented in this work offers the advantages of low power, robustness, absence of DSP cores or processors, reduction in design cycle times, guaranteed optimal performance under varying conditions and fast correction times (less than 30 µs)

Differential temperature sensors: Review of applications in the test and characterization of circuits, usage and design methodology

Differential temperature sensors can be placed in integrated circuits to extract a signature ofthe power dissipated by the adjacent circuit blocks built in the same silicon die. This review paper firstdiscusses the singularity that differential temperature sensors provide with respect to other sensortopologies, with circuit monitoring being their main application. The paper focuses on the monitoringof radio-frequency analog circuits. The strategies to extract the power signature of the monitoredcircuit are reviewed, and a list of application examples in the domain of test and characterizationis provided. As a practical example, we elaborate the design methodology to conceive, step bystep, a differential temperature sensor to monitor the aging degradation in a class-A linear poweramplifier working in the 2.4 GHz Industrial Scientific Medical—ISM—band. It is discussed how,for this particular application, a sensor with a temperature resolution of 0.02 K and a high dynamicrange is required. A circuit solution for this objective is proposed, as well as recommendations for thedimensions and location of the devices that form the temperature sensor. The paper concludes with adescription of a simple procedure to monitor time variability.Postprint (published version

Synthesis for circuit reliability

textElectrical and Computer Engineerin

Constraint-driven RF test stimulus generation and built-in test

With the explosive growth in wireless applications, the last decade witnessed an ever-increasing test challenge for radio frequency (RF) circuits. While the design community has pushed the envelope far into the future, by expanding CMOS process to be used with high-frequency wireless devices, test methodology has not advanced at the same pace. Consequently, testing such devices has become a major bottleneck in high-volume production, further driven by the growing need for tighter quality control. RF devices undergo testing during the prototype phase and during high-volume manufacturing (HVM). The benchtop test equipment used throughout prototyping is very precise yet specialized for a subset of functionalities. HVM calls for a different kind of test paradigm that emphasizes throughput and sufficiency, during which the projected performance parameters are measured one by one for each device by automated test equipment (ATE) and compared against defined limits called specifications. The set of tests required for each product differs greatly in terms of the equipment required and the time taken to test individual devices. Together with signal integrity, precision, and repeatability concerns, the initial cost of RF ATE is prohibitively high. As more functionality and protocols are integrated into a single RF device, the required number of specifications to be tested also increases, adding to the overall cost of testing, both in terms of the initial and recurring operating costs. In addition to the cost problem, RF testing proposes another challenge when these components are integrated into package-level system solutions. In systems-on-packages (SOP), the test problems resulting from signal integrity, input/output bandwidth (IO), and limited controllability and observability have initiated a paradigm shift in high-speed analog testing, favoring alternative approaches such as built-in tests (BIT) where the test functionality is brought into the package. This scheme can make use of a low-cost external tester connected through a low-bandwidth link in order to perform demanding response evaluations, as well as make use of the analog-to-digital converters and the digital signal processors available in the package to facilitate testing. Although research on analog built-in test has demonstrated hardware solutions for single specifications, the paradigm shift calls for a rather general approach in which a single methodology can be applied across different devices, and multiple specifications can be verified through a single test hardware unit, minimizing the area overhead. Specification-based alternate test methodology provides a suitable and flexible platform for handling the challenges addressed above. In this thesis, a framework that integrates ATE and system constraints into test stimulus generation and test response extraction is presented for the efficient production testing of high-performance RF devices using specification-based alternate tests. The main components of the presented framework are as follows: Constraint-driven RF alternate test stimulus generation: An automated test stimulus generation algorithm for RF devices that are evaluated by a specification-based alternate test solution is developed. The high-level models of the test signal path define constraints in the search space of the optimized test stimulus. These models are generated in enough detail such that they inherently define limitations of the low-cost ATE and the I/O restrictions of the device under test (DUT), yet they are simple enough that the non-linear optimization problem can be solved empirically in a reasonable amount of time. Feature extractors for BIT: A methodology for the built-in testing of RF devices integrated into SOPs is developed using additional hardware components. These hardware components correlate the high-bandwidth test response to low bandwidth signatures while extracting the test-critical features of the DUT. Supervised learning is used to map these extracted features, which otherwise are too complicated to decipher by plain mathematical analysis, into the specifications under test. Defect-based alternate testing of RF circuits: A methodology for the efficient testing of RF devices with low-cost defect-based alternate tests is developed. The signature of the DUT is probabilistically compared with a class of defect-free device signatures to explore possible corners under acceptable levels of process parameter variations. Such a defect filter applies discrimination rules generated by a supervised classifier and eliminates the need for a library of possible catastrophic defects.Ph.D.Committee Chair: Chatterjee, Abhijit; Committee Member: Durgin, Greg; Committee Member: Keezer, David; Committee Member: Milor, Linda; Committee Member: Sitaraman, Sures

Fault-tolerant design of RF front-end circuits

The continuing trends of scaling in the CMOS industry have, inevitably, been accompanied by an ever-increasing array of process faults and fabrication complexities. The relentless march towards miniaturization and massive integration, in addition to increasing operating frequencies has resulted in increasing concerns about the reliability of integrated RF front-ends. Coupled with rising cost per chip, the fault-tolerant paradigm has become pertinent in the RFIC domain. Two main reasons have contributed to the fact that fault-tolerant solutions for circuits that operate in the GHz domain have not been realized so far. First, GHz signals are extremely sensitive to higher-order effects such as stray pick-ups, interference, package & on-chip parasitics, etc. Secondly, the use of passives, especially inductors, in the feedback path poses huge area overheads, in addition to a slew of instability problems due to wide variations and soft faults. Hence traditional fault-tolerance methods used in digital and low frequency analog circuits cannot be applied in the RF domain. This work presents a unique methodology to achieve fault-tolerance in RF circuits through dynamic sensing and on-chip self-correction, along with the development of robust algorithms. This technique is minimally intrusive and is transparent during \u27normal\u27 use of the circuit. It is characterized by low area and power overheads, does not need any off-chip computing or DSP cores, and is characterized by self-correction times in the range of a few hundreds of microseconds. It compares very well with existing commercial RF test solutions that use DSP cores and require hundreds of milliseconds. The methodology is demonstrated on a LNA, since it is critical for the performance of the entire front-end. It is validated with simulation and fabrication results of the system designed in IBM 0.25 µm CMOS 6RF process

Solutions pour l'auto-adaptation des systèmes sans fil

The current demand on ubiquitous connectivity imposes stringent requirements on the fabrication of Radio-Frequency (RF) circuits. Designs are consequently transferred to the most advanced CMOS technologies that were initially introduced to improve digital performance. In addition, as technology scales down, RF circuits are more and more susceptible to a lot of variations during their lifetime, as manufacturing process variability, temperature, environmental conditions, aging… As a result, the usual worst-case circuit design is leading to sub-optimal conditions, in terms of power and/or performance most of the time for the circuit. In order to counteract these variations, increasing the performances and also reduce power consumption, adaptation strategies must be put in place.More importantly, the fabrication process introduces more and more performance variability, which can have a dramatic impact on the fabrication yield. That is why RF designs are not easily fabricated in the most advanced CMOS technologies, as 32nm or 22nm nodes for instance. In this context, the performances of RF circuits need to be calibrated after fabrication so as to take these variations into account and recover yield loss.This thesis work is presenting on a post-fabrication calibration technique for RF circuits. This technique is performed during production testing with minimum extra cost, which is critical since the cost of test can be comparable to the cost of fabrication concerning RF circuits and cannot be further raised. Calibration is enabled by equipping the circuit with tuning knobs and sensors. Optimal tuning knob identification is achieved in one-shot based on a single test step that involves measuring the sensor outputs once. For this purpose, we rely on variation-aware sensors which provide measurements that remain invariant under tuning knob changes. As an auxiliary benefit, the variation-aware sensors are non-intrusive and totally transparent to the circuit.Our proposed methodology has first been demonstrated with simulation data with an RF power amplifier as a case study. Afterwards, a silicon demonstrator has then been fabricated in a 65nm technology in order to fully demonstrate the methodology. The fabricated dataset of circuits is extracted from typical and corner wafers. This feature is very important since corner circuits are the worst design cases and therefore the most difficult to calibrate. In our case, corner circuits represent more than the two third of the overall dataset and the calibration can still be proven. In details, fabrication yield based on 3 sigma performance specifications is increased from 21% to 93%. This is a major performance of the technique, knowing that worst case circuits are very rare in industrial fabrication.La demande courante de connectivité instantanée impose un cahier des charges très strict sur la fabrication des circuits Radio-Fréquences (RF). Les circuits doivent donc être transférées vers les technologies les plus avancées, initialement introduites pour augmenter les performances des circuits purement numériques. De plus, les circuits RF sont soumis à de plus en plus de variations et cette sensibilité s’accroît avec l’avancées des technologies. Ces variations sont par exemple les variations du procédé de fabrication, la température, l’environnement, le vieillissement… Par conséquent, la méthode classique de conception de circuits “pire-cas” conduit à une utilisation non-optimale du circuit dans la vaste majorité des conditions, en termes de performances et/ou de consommation. Ces variations doivent donc être compensées, en utilisant des techniques d’adaptation.De manière plus importante encore, le procédé de fabrication des circuits introduit de plus en plus de variabilité dans les performances des circuits, ce qui a un impact important sur le rendement de fabrication des circuits. Pour cette raison, les circuits RF sont difficilement fabriqués dans les technologies CMOS les plus avancées comme les nœuds 32nm ou 22nm. Dans ce contexte, les performances des circuits RF doivent êtres calibrées après fabrication pour prendre en compte ces variations et retrouver un haut rendement de fabrication.Ce travail de these présente une méthode de calibration post-fabrication pour les circuits RF. Cette méthodologie est appliquée pendant le test de production en ajoutant un minimum de coût, ce qui est un point essentiel car le coût du test est aujourd’hui déjà comparable au coût de fabrication d’un circuit RF et ne peut être augmenté d’avantage. Par ailleurs, la puissance consommée est aussi prise en compte pour que l’impact de la calibration sur la consommation soit minimisé. La calibration est rendue possible en équipant le circuit avec des nœuds de réglages et des capteurs. L’identification de la valeur de réglage optimale du circuit est obtenue en un seul coup, en testant les performances RF une seule et unique fois. Cela est possible grâce à l’utilisation de capteurs de variations du procédé de fabrication qui sont invariants par rapport aux changements des nœuds de réglage. Un autre benefice de l’utilisation de ces capteurs de variation sont non-intrusifs et donc totalement transparents pour le circuit sous test. La technique de calibration a été démontrée sur un amplificateur de puissance RF utilisé comme cas d’étude. Une première preuve de concept est développée en utilisant des résultats de simulation.Un démonstrateur en silicium a ensuite été fabriqué en technologie 65nm pour entièrement démontrer le concept de calibration. L’ensemble des puces fabriquées a été extrait de trois types de wafer différents, avec des transistors aux performances lentes, typiques et rapides. Cette caractéristique est très importante car elle nous permet de considérer des cas de procédé de fabrication extrêmes qui sont les plus difficiles à calibrer. Dans notre cas, ces circuits représentent plus des deux tiers des puces à disposition et nous pouvons quand même prouver notre concept de calibration. Dans le détails, le rendement de fabrication passe de 21% avant calibration à plus de 93% après avoir appliqué notre méthodologie. Cela constitue une performance majeure de notre méthodologie car les circuits extrêmes sont très rares dans une fabrication industrielle

NASA SBIR abstracts of 1991 phase 1 projects

The objectives of 301 projects placed under contract by the Small Business Innovation Research (SBIR) program of the National Aeronautics and Space Administration (NASA) are described. These projects were selected competitively from among proposals submitted to NASA in response to the 1991 SBIR Program Solicitation. The basic document consists of edited, non-proprietary abstracts of the winning proposals submitted by small businesses. The abstracts are presented under the 15 technical topics within which Phase 1 proposals were solicited. Each project was assigned a sequential identifying number from 001 to 301, in order of its appearance in the body of the report. Appendixes to provide additional information about the SBIR program and permit cross-reference of the 1991 Phase 1 projects by company name, location by state, principal investigator, NASA Field Center responsible for management of each project, and NASA contract number are included

Degradation in FPGAs: Monitoring, Modeling and Mitigation

This dissertation targets the transistor aging degradation as well as the associated thermal challenges in FPGAs (since there is an exponential relation between aging and chip temperature). The main objectives are to perform experimentation, analysis and device-level model abstraction for modeling the degradation in FPGAs, then to monitor the FPGA to keep track of aging rates and ultimately to propose an aging-aware FPGA design flow to mitigate the aging