Model Development and Assessment of the Gate Network in a High-Performance SiC Power Module

The main objective of this effort is to determine points of weakness in the gate network of a high-performance SiC power module and to offer remedies to these issues to increase the overall performance, robustness, and reliability of the technology. In order to accomplish this goal, a highly accurate model of the gate network is developed through three methods of parameter extraction: calculation, simulation, and measurement. A SPICE model of the gate network is developed to analyze four electrical issues in a high-speed, SiC-based power module including the necessary internal gate resistance for damping under-voltage and over-voltage transients, the disparity in switching loss between paralleled devices due to propagation delay, a high-frequency oscillatory behavior on gate voltage due to die-to-die interactions, and current equalization in the kelvin-source signal path. In addition, the analysis of parameter variance between paralleled MOSFETs and the effects of mismatched threshold voltage and on-state resistance on switching loss and junction temperature are investigated. Finally, three Miller Clamp topologies are simulated and assessed for effectiveness culminating in a solution for parasitic turn-on in high dv/dt systems such as those utilizing high-performance SiC power modules

Nanoscale Electromagnetic Compatibility: Quantum Coupling and Matching in Nanocircuits

AcceptedArticle in PressThe paper investigates two typical electromagnetic compatibility (EMC) problems, namely, coupling and matching in nanoscale circuits composed of nano-interconnects and quantum devices in entangled state. Nano-interconnects under consideration are implemented by using carbon nanotubes or metallic nanowires (NWs), while quantum devices by semiconductor quantum dots. Equivalent circuits of such nanocircuits contain additional elements arising at nanoscale due to quantum effects. As a result, the notions of coupling and impedance matching are reconsidered. Two examples are studied: in the first one, electromagnetically coupled NWs are connected to classical lumped devices; in the second one, electromagnetically uncoupled transmission lines are terminated on quantum devices in entangled states. In both circuits, the EMC features qualitatively and quantitatively differ from their classical analogs. In the second example, we demonstrate the existence of quantum coupling, due to the entanglement, which exists in spite of the absence of classical electromagnetic coupling. The entanglement also modifies the matching condition introducing a dependence of the optimal value of load impedance on the line length

Reduction of network models with a large number of sources

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