Hardware Security Implications of Reliability, Remanence and Recovery in Embedded Memory

Secure semiconductor devices usually destroy key material on tamper detection. However, data remanence effect in SRAM and Flash/EEPROM makes secure erasure process more challenging. On the other hand, data integrity of the embedded memory is essential to mitigate fault attacks and Trojan malware. Data retention issues could influence the reliability of embedded systems. Some examples of such issues in industrial and automotive applications are presented. When it comes to the security of semiconductor devices, both data remanence and data retention issues could lead to possible data recovery by an attacker. This paper introduces a new power glitching technique that reduces the data remanence time in embedded SRAM from seconds to microseconds at almost no cost. This would definitely help in designing systems with better secret key guarding. Data remanence in non-volatile memory could be influenced in the same way. The effect of data remanence and data retention on hardware security is discussed and possible countermeasures are suggested. This should raise awareness among the designers of secure embedded systems

Emerging embedded nonvolatile memory solution for ultra low power microcontroller systems

13301甲第4810号博士（工学）金沢大学博士論文本文Full 以下に掲載および掲載予定：1.IEEE Journal of Solid-State Circuits 27(4) pp.569-573 1992. IEEE. 共著者：M. Hayashikoshi, H. Hidaka, K. Arimoto, K. Fujishima 2.IEEE Transactions on Multi-Scale Computing Systems IEEE. 共著者：M. Hayashikoshi, H. Noda, H. Kawai, Y. Murai, S. Otani, K. Nii, Y. Matsuda, H. Kond

Deep Trek High Temperature Electronics Project

This report summarizes technical progress achieved during the cooperative research agreement between Honeywell and U.S. Department of Energy to develop high-temperature electronics. Objects of this development included Silicon-on-Insulator (SOI) wafer process development for high temperature, supporting design tools and libraries, and high temperature integrated circuit component development including FPGA, EEPROM, high-resolution A-to-D converter, and a precision amplifier

An Analog VLSI Deep Machine Learning Implementation

Machine learning systems provide automated data processing and see a wide range of applications. Direct processing of raw high-dimensional data such as images and video by machine learning systems is impractical both due to prohibitive power consumption and the “curse of dimensionality,” which makes learning tasks exponentially more difficult as dimension increases. Deep machine learning (DML) mimics the hierarchical presentation of information in the human brain to achieve robust automated feature extraction, reducing the dimension of such data. However, the computational complexity of DML systems limits large-scale implementations in standard digital computers. Custom analog signal processing (ASP) can yield much higher energy efficiency than digital signal processing (DSP), presenting means of overcoming these limitations. The purpose of this work is to develop an analog implementation of DML system. First, an analog memory is proposed as an essential component of the learning systems. It uses the charge trapped on the floating gate to store analog value in a non-volatile way. The memory is compatible with standard digital CMOS process and allows random-accessible bi-directional updates without the need for on-chip charge pump or high voltage switch. Second, architecture and circuits are developed to realize an online k-means clustering algorithm in analog signal processing. It achieves automatic recognition of underlying data pattern and online extraction of data statistical parameters. This unsupervised learning system constitutes the computation node in the deep machine learning hierarchy. Third, a 3-layer, 7-node analog deep machine learning engine is designed featuring online unsupervised trainability and non-volatile floating-gate analog storage. It utilizes massively parallel reconfigurable current-mode analog architecture to realize efficient computation. And algorithm-level feedback is leveraged to provide robustness to circuit imperfections in analog signal processing. At a processing speed of 8300 input vectors per second, it achieves 1×1012 operation per second per Watt of peak energy efficiency. In addition, an ultra-low-power tunable bump circuit is presented to provide similarity measures in analog signal processing. It incorporates a novel wide-input-range tunable pseudo-differential transconductor. The circuit demonstrates tunability of bump center, width and height with a power consumption significantly lower than previous works

Reliable Low-Power High Performance Spintronic Memories

Moores Gesetz folgend, ist es der Chipindustrie in den letzten fünf Jahrzehnten gelungen, ein explosionsartiges Wachstum zu erreichen. Dies hatte ebenso einen exponentiellen Anstieg der Nachfrage von Speicherkomponenten zur Folge, was wiederum zu speicherlastigen Chips in den heutigen Computersystemen führt. Allerdings stellen traditionelle on-Chip Speichertech- nologien wie Static Random Access Memories (SRAMs), Dynamic Random Access Memories (DRAMs) und Flip-Flops eine Herausforderung in Bezug auf Skalierbarkeit, Verlustleistung und Zuverlässigkeit dar. Eben jene Herausforderungen und die überwältigende Nachfrage nach höherer Performanz und Integrationsdichte des on-Chip Speichers motivieren Forscher, nach neuen nichtflüchtigen Speichertechnologien zu suchen. Aufkommende spintronische Spe- ichertechnologien wie Spin Orbit Torque (SOT) und Spin Transfer Torque (STT) erhielten in den letzten Jahren eine hohe Aufmerksamkeit, da sie eine Reihe an Vorteilen bieten. Dazu gehören Nichtflüchtigkeit, Skalierbarkeit, hohe Beständigkeit, CMOS Kompatibilität und Unan- fälligkeit gegenüber Soft-Errors. In der Spintronik repräsentiert der Spin eines Elektrons dessen Information. Das Datum wird durch die Höhe des Widerstandes gespeichert, welche sich durch das Anlegen eines polarisierten Stroms an das Speichermedium verändern lässt. Das Prob- lem der statischen Leistung gehen die Speichergeräte sowohl durch deren verlustleistungsfreie Eigenschaft, als auch durch ihr Standard- Aus/Sofort-Ein Verhalten an. Nichtsdestotrotz sind noch andere Probleme, wie die hohe Zugriffslatenz und die Energieaufnahme zu lösen, bevor sie eine verbreitete Anwendung finden können. Um diesen Problemen gerecht zu werden, sind neue Computerparadigmen, -architekturen und -entwurfsphilosophien notwendig. Die hohe Zugriffslatenz der Spintroniktechnologie ist auf eine vergleichsweise lange Schalt- dauer zurückzuführen, welche die von konventionellem SRAM übersteigt. Des Weiteren ist auf Grund des stochastischen Schaltvorgangs der Speicherzelle und des Einflusses der Prozessvari- ation ein nicht zu vernachlässigender Zeitraum dafür erforderlich. In diesem Zeitraum wird ein konstanter Schreibstrom durch die Bitzelle geleitet, um den Schaltvorgang zu gewährleisten. Dieser Vorgang verursacht eine hohe Energieaufnahme. Für die Leseoperation wird gleicher- maßen ein beachtliches Zeitfenster benötigt, ebenfalls bedingt durch den Einfluss der Prozess- variation. Dem gegenüber stehen diverse Zuverlässigkeitsprobleme. Dazu gehören unter An- derem die Leseintereferenz und andere Degenerationspobleme, wie das des Time Dependent Di- electric Breakdowns (TDDB). Diese Zuverlässigkeitsprobleme sind wiederum auf die benötigten längeren Schaltzeiten zurückzuführen, welche in der Folge auch einen über längere Zeit an- liegenden Lese- bzw. Schreibstrom implizieren. Es ist daher notwendig, sowohl die Energie, als auch die Latenz zur Steigerung der Zuverlässigkeit zu reduzieren, um daraus einen potenziellen Kandidaten für ein on-Chip Speichersystem zu machen. In dieser Dissertation werden wir Entwurfsstrategien vorstellen, welche das Ziel verfolgen, die Herausforderungen des Cache-, Register- und Flip-Flop-Entwurfs anzugehen. Dies erre- ichen wir unter Zuhilfenahme eines Cross-Layer Ansatzes. Für Caches entwickelten wir ver- schiedene Ansätze auf Schaltkreisebene, welche sowohl auf der Speicherarchitekturebene, als auch auf der Systemebene in Bezug auf Energieaufnahme, Performanzsteigerung und Zuver- lässigkeitverbesserung evaluiert werden. Wir entwickeln eine Selbstabschalttechnik, sowohl für die Lese-, als auch die Schreiboperation von Caches. Diese ist in der Lage, den Abschluss der entsprechenden Operation dynamisch zu ermitteln. Nachdem der Abschluss erkannt wurde, wird die Lese- bzw. Schreiboperation sofort gestoppt, um Energie zu sparen. Zusätzlich limitiert die Selbstabschalttechnik die Dauer des Stromflusses durch die Speicherzelle, was wiederum das Auftreten von TDDB und Leseinterferenz bei Schreib- bzw. Leseoperationen re- duziert. Zur Verbesserung der Schreiblatenz heben wir den Schreibstrom an der Bitzelle an, um den magnetischen Schaltprozess zu beschleunigen. Um registerbankspezifische Anforderungen zu berücksichtigen, haben wir zusätzlich eine Multiport-Speicherarchitektur entworfen, welche eine einzigartige Eigenschaft der SOT-Zelle ausnutzt, um simultan Lese- und Schreiboperatio- nen auszuführen. Es ist daher möglich Lese/Schreib- Konfilkte auf Bitzellen-Ebene zu lösen, was sich wiederum in einer sehr viel einfacheren Multiport- Registerbankarchitektur nieder- schlägt. Zusätzlich zu den Speicheransätzen haben wir ebenfalls zwei Flip-Flop-Architekturen vorgestellt. Die erste ist eine nichtflüchtige non-Shadow Flip-Flop-Architektur, welche die Speicherzelle als aktive Komponente nutzt. Dies ermöglicht das sofortige An- und Ausschalten der Versorgungss- pannung und ist daher besonders gut für aggressives Powergating geeignet. Alles in Allem zeigt der vorgestellte Flip-Flop-Entwurf eine ähnliche Timing-Charakteristik wie die konventioneller CMOS Flip-Flops auf. Jedoch erlaubt er zur selben Zeit eine signifikante Reduktion der statis- chen Leistungsaufnahme im Vergleich zu nichtflüchtigen Shadow- Flip-Flops. Die zweite ist eine fehlertolerante Flip-Flop-Architektur, welche sich unanfällig gegenüber diversen Defekten und Fehlern verhält. Die Leistungsfähigkeit aller vorgestellten Techniken wird durch ausführliche Simulationen auf Schaltkreisebene verdeutlicht, welche weiter durch detaillierte Evaluationen auf Systemebene untermauert werden. Im Allgemeinen konnten wir verschiedene Techniken en- twickeln, die erhebliche Verbesserungen in Bezug auf Performanz, Energie und Zuverlässigkeit von spintronischen on-Chip Speichern, wie Caches, Register und Flip-Flops erreichen

Investigation of the scalability limitations of phase change random access memory

Ph.DDOCTOR OF PHILOSOPH

Secure HfO2 based charge trap EEPROM with lifetime and data retention time modeling

Trusted computing is currently the most promising security strategy for cyber physical systems. Trusted computing platform relies on securely stored encryption keys in the on-board memory. However, research and actual cases have shown the vulnerability of the on-board memory to physical cryptographic attacks. This work proposed an embedded secure EEPROM architecture employing charge trap transistor to improve the security of storage means in the trusted computing platform. The charge trap transistor is CMOS compatible with high dielectric constant material as gate oxide which can trap carriers. The process compatibility allows the secure information containing memory to be embedded with the CPU. This eliminates the eavesdropping and optical observation. This effort presents the secure EEPROM cell, its high voltage programming control structure and an interface architecture for command and data communication between the EEPROM and CPU. The interface architecture is an ASIC based design that exclusively for the secure EEPROM. The on-board programming capability enables adjustment of programming voltages and accommodates EEPROM threshold variation due to PVT to optimize lifetime. In addition to the functional circuitry, this work presents the first model of lifetime and data retention time tradeoff for this new type of EEPROM. This model builds the bridge between desired data retention time and lifetime while producing the corresponding programming time and voltage

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

NRF52-piirisarjaan perustuva elektroninen ohjausjärjestelmän kehitysalusta

Aim of the thesis was to develop and build an embedded hardware device that utilizes a SoC from the Nordic Semiconductor nRF52-series. The purpose was to create a modular platform that would be capable of controlling later developed control system applications. The selected example application was a heating control system for a small scale wood chip burning water boiler. The nRF52-series devices are SoC’s with integrated 2.4 GHz radio modules, which are intended for implementing low bandwidth wireless networks such as BLE or ANT+. The devices have a ARM Cortex-M4 processors integrated to a set of peripheral devices. The processors are capable of running both application code and wireless networks stacks in the same device, which makes them fully integrated wireless SoC solutions. In the platform the radio is planned to be used for extending the user interface as well as connecting additional devices such as sensors. However, the content of the thesis is solely focused on developing and implementing hardware part of the design. The hardware developed in the thesis is a modular three board design. Consisting of one main board with the SoC and two auxiliary boards with connection interfaces to the application. The boards are supplied from mains network and can control three mains powered devices with duplicated switches for safety. When mains network is not available, the device operates from a integrated li-ion battery which keeps non-mains related features working from several hours to multiple days. Other main features include a BLE radio, USB serial interface, battery charger and a configurable interface for thermocouples and resistive temperature sensors. Additionally the device has a user interface consisting of a LED-array, two digit 7-segment display, buzzer, buttons and a motorized potentiometer. Design decisions, implementation and some operational theory are covered in the theoretical part of the thesis. In the practical part of the thesis, all features of the three boards were designed as well as a schematic and layout of the boards were drawn. Component sourcing, board assembly and reflow soldering were also done within the thesis. All boards were designed to fit in a off-the-self enclosure with custom designed and manufactured front panel serving as the user interface. The work done during the thesis covers a full electronic hardware device development process and resulted in an actual devices that can be used to control applications such as the boiler heating system