Real Time Non uniformity Correction Algorithm and Implementation in Reconfigurable Architecture for Infra red Imaging Systems

 In modern electro-optical systems, infra-red (IR) imaging system is an essential sensor used for day and night surveillance. In recent years, advancements in IR sensor technology resulted the detectors having smaller pitch, better thermal sensitivity with large format like 640.512, 1024.768 and 1280.1024. Large format IR detectors enables realisation of high resolution compact thermal imager having wide field-of view coverage. However, the performance of these infrared imaging systems gets limited by non uniformity produced by sensing element, which is temporal in nature and present in spatial domain. This non uniformity results the fixed pattern noise, which arises due to variation in gain and offset components of the each pixel of the sensor even when exposed to a uniform scene. This fixed pattern noise limits the temperature resolution capability of the IR imaging system thereby causing the degradation in system performance. Therefore, it is necessary to correct the non-uniformities in real time. In this paper, non uniformity correction algorithm and its implementation in reconfigurable architectures have been presented and results on real time data have been described

Influences on post-correction nonuniformity of infrared focal plane arrays

Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.Includes bibliographical references (leaves 75-77).by Amory Wakefield.M.Eng

Solid-state image sensor with focal-plane digital photon-counting pixel array

A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array

Fixed pattern noise compensation in a mercury cadmium telluride infrared focal plane array

Bibliography: pages 106-109.This thesis describes techniques for the correction of spatial noise artifacts in a mercury cadmium telluride infrared camera system. The spatial noise artifacts are a result of nonuniformities within the infrared focal plane detector array. The techniques presented dispense with the need for traditional temperature references, and provide nonuniformity compensation by using only the statistics of the moving infrared scene and motion of the camera assembly for calibration. Frame averaging is employed, assuming that all of the detector pixels will eventually be irradiated with the same levels of incident flux after some extended period of time. Using a statistical analysis of the camera image data, the correction coefficients are re-calculated and updated. These techniques also ensure that the calculated coefficients continually track the variations in the dark currents as well as temperature changes within the dewar sensor cooling vessel. These scene-based reference free approaches to the calculation of compensation coefficients in the infrared camera are shown to be successful in compensating for the effects of fixed pattern spatial noise

CMOS Approach to Compressed-domain Image Acquisition

A hardware implementation of a real-time compressed-domain image acquisition system is demonstrated. The system performs front-end computational imaging, whereby the inner product between an image and an arbitrarily-specified mask is implemented in silicon. The acquisition system is based on an intelligent readout integrated circuit (iROIC) that is capable of providing independent bias voltages to individual detectors, which enables implementation of spatial multiplication with any prescribed mask through a bias-controlled response-modulation mechanism. The modulated pixels are summed up in the image grabber to generate the compressed samples, namely aperture-coded coefficients, of an image. A rigorous bias-selection algorithm is presented to the readout circuit, which exploits the bias-dependent nature of the imager’s responsivity. Proven functionality of the hardware in transform coding compressed image acquisition, silicon-level compressive sampling, in pixel nonuniformity correction and hardware-level implementation of region-based enhancement is demonstrated

Study of scene-based nonuniformity compensation in infrared focal plane arrays

Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.Includes bibliographical references (leaves 77-79).by Laura S. Juliano.M.Eng

Miniaturized Silicon Photodetectors

Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications

Methods for Focal Plane Array Resolution Estimation Using Random Laser Speckle in Non-paraxial Geometries

The infrared (IR) imaging community has a need for direct IR detector evaluation due to the continued demand for small pixel pitch detectors, the emergence of strained-layer-super-lattice devices, and the associated lateral carrier diffusion issues. Conventional laser speckle-based modulation transfer function (MTF) estimation is dependent on Fresnel propagation and a wide-sense-stationary input random process, limiting the use of this approach for lambda (wavelength)-scale IR devices. This dissertation develops two alternative methodologies for speckle-based resolution evaluation of IR focal plane arrays (FPAs). Both techniques are formulated using Rayleigh-Sommerfield electric field propagation, making them valid in the non-paraxial geometries dictated for resolution estimation of lambda-scale devices. The generalized FPA MTF estimation approach numerically evaluates Rayleigh-Sommerfeld speckle irradiance autocorrelation functions (ACFs) to indirectly compute the power spectral density (PSD) of a non-wide-sense-stationary (WSS) speckle irradiance random process. The experimental error incurred by making WSS assumptions regarding the associated laser speckle random process is quantified utilizing the Wigner distribution function. This method is experimentally demonstrated on a lambda-scale longwave IR FPA, showing a 27% spatial frequency range improvement over established estimation methodology. Additionally, a resolution estimation approach, which utilizes an iterative maximum likelihood estimation approach and speckle irradiance ACFs to solve for a system impulse response, is developed and demonstrated with simulated speckle imagery

Analysis and comparison of resistive, ferroelectric and pyroelectric uncooled bolometers for electronic imaging systems

The performance parameters (responsivity (Rv). detectivity (D*), total noise and response time) of resistive, pyroelectric and ferroelectric bolometer detectors are dependent on a large number of key variables including chopping frequercy, the input impedance and voltage noise of the readout circuitry, the structure dependent parameters (particularly thermal conductance and thermal capacitance), and material properties such as dielectric constant, pyroelectric coefficient, loss tangent and thin film thickness. The interrelationship between the key variables and their influence on performance is often complex and not easily discerned for the three major types of thermal detectors: resistive, pyroelectric and ferroelectric bolometers. In this thesis research, the dependence of Rv, D* and total noise on these key parameters were analyzed and written as equations from which computer calculations could easily be made. The analyzed results were used to compare the pertbrmance of the three types of sensors for present-day structure and material characteristics and also for material characteristics and structures that night be developed in the future